JP6412983B2 - 間隙検出用のインテリジェントなハードストップと制御機構 - Google Patents
間隙検出用のインテリジェントなハードストップと制御機構 Download PDFInfo
- Publication number
- JP6412983B2 JP6412983B2 JP2017124695A JP2017124695A JP6412983B2 JP 6412983 B2 JP6412983 B2 JP 6412983B2 JP 2017124695 A JP2017124695 A JP 2017124695A JP 2017124695 A JP2017124695 A JP 2017124695A JP 6412983 B2 JP6412983 B2 JP 6412983B2
- Authority
- JP
- Japan
- Prior art keywords
- actuator
- gas distribution
- assembly
- hard stop
- distribution assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001514 detection method Methods 0.000 title 1
- 238000009826 distribution Methods 0.000 claims description 100
- 238000000034 method Methods 0.000 claims description 45
- 230000008021 deposition Effects 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 109
- 235000012431 wafers Nutrition 0.000 description 55
- 238000012545 processing Methods 0.000 description 43
- 239000000758 substrate Substances 0.000 description 26
- 238000000231 atomic layer deposition Methods 0.000 description 12
- 238000000429 assembly Methods 0.000 description 11
- 230000000712 assembly Effects 0.000 description 11
- 238000000151 deposition Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010926 purge Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000013507 mapping Methods 0.000 description 4
- 239000012713 reactive precursor Substances 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 238000003877 atomic layer epitaxy Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
- G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (15)
- 上端を有する上部、底端を有する底部、及び上端から底端に伸びる開口が備えられた本体を有するハードストップであって、本体の上部が、ガス分配アセンブリに接続されるフランジを有するハードストップと、
上端を有する上部、及び下端を有する下部が備えられた本体を有するアクチュエータであって、本体の上部が、本体を通って伸びる通路を有し、通路は、第一の端と第二の端を有し、アクチュエータは、ハードストップの開口の中でスライド可能に配置される大きさであるアクチュエータと、
ハードストップとアクチュエータの間に配置されたOリングと、
アクチュエータの中の通路の第一の端と位置合わせされる放射体と、
アクチュエータの中の通路の第二の端と位置合わせされる検出器とを備え、
アクチュエータは、ハードストップの開口内で移動可能であり、アクチュエータの下端に力が加わっていない場合には、ハードストップの下端より第一の距離だけ突出したアクチュエータ状態になり、アクチュエータの下端に所定の力が加わっている場合には、ハードストップの下端より第一の距離だけ突出したアクチュエータ状態になり、第一の距離だけ伸びたアクチュエータ状態と、第二の距離だけ突出したアクチュエータ状態において、ハードストップとアクチュエータの間に流体密閉シールが、Oリングによって形成される、装置。 - アクチュエータの上端に隣接して配置されるスプリングと、スプリングに隣接して配置されて、スプリングに圧力を与えるプレートとを更に含む、請求項1に記載の装置。
- アクチュエータの下端に圧力が加わると、アクチュエータがハードストップの開口の中でスライドして、スプリングが最大に圧縮されて、ハードストップの下端から、第一の距離よりも短い第二の距離だけアクチュエータの下端が突き出る状態になる、請求項2に記載の装置。
- スプリングが最大に圧縮された場合に、アクチュエータの下端が、ハードストップの下端から少なくとも0.1mm突き出る、請求項3に記載の装置。
- アクチュエータの動きにより、放射体及び検出器と通路との位置関係が変化する、請求項4に記載の装置。
- アクチュエータの下端が、ハードストップから第一の距離だけ突き出た状態にあるときには、放射体及び検出器が通路に対して位置合わせされて、放射体から検出器を介して検出した光に対し、第一の減衰が通路によって与えられ、アクチュエータが第二の距離だけ突き出た状態にあるときには、放射体から検出器を介して検出した光に対し、第一の減衰とは異なる第二の減衰が通路によって与えられる、請求項5に記載の装置。
- アクチュエータが、第一の距離だけ突き出た場合の減衰である第一の減衰は、第二の距離だけ突き出た場合の減衰である第二の減衰より小さい、請求項6に記載の装置。
- アクチュエータが、第一の距離だけ突き出た場合の減衰である第一の減衰は、第二の距離だけ突き出た場合の減衰である第二の減衰より大きい、請求項6に記載の装置。
- 前面、裏面を有するガス分配アセンブリと、
ガス分配アセンブリから間隔を置いて配置されたサセプタアセンブリであって、その上面がガス分配アセンブリの前面に対向して間隙が画定されるサセプタアセンブリと、
ハードストップのフランジが、ガス分配アセンブリの裏面に接続され、ハードストップの下端が、ガス分配アセンブリを通って伸び、ガス分配アセンブリの前面から突き出る、請求項1から8のいずれか一項に記載の装置とを
備える堆積装置。 - サセプタアセンブリは、ガス分配アセンブリに近づくように、また遠ざかるように移動可能である、請求項9に記載の堆積装置。
- サセプタアセンブリの上面はアクチュエータに接触し、サセプタアセンブリが、ガス分配アセンブリに対して近づく移動および遠ざかる移動により、アクチュエータがハードストップの開口内を移動する、請求項10に記載の堆積装置。
- アクチュエータをサセプタアセンブリに接触させる接触工程であって、アクチュエータはハードストップ本体の開口部に配置され、ハードストップ本体はガス分配アセンブリ内に配置されて、アクチュエータはガス分配アセンブリを通って、ガス分配アセンブリとサセプタアセンブリとの間の間隙へと伸びて、接触時にアクチュエータはガス分配アセンブリから第一の距離のところまで伸びる、接触工程と、
放射体からアクチュエータの上部の通路を通って伝送される第一の光量を測定する測定工程と、
放射体からの第二の光量を測定しつつ、ガス分配アセンブリに向けてサセプタアセンブリを移動させる移動工程であって、サセプタアセンブリがガス分配アセンブリに向って移動して、前記間隙を縮小してアクチュエータを移動して、所定の第二の光量に達するようになるまでに、アクチュエータは第一の距離より短い第二の距離だけ伸びる移動工程と
を含む方法。 - サセプタアセンブリのエッジ、ガス分配アセンブリのエッジ及び前記間隙が、カメラの視野の中にみえるように、サセプタアセンブリ及びガス分配アセンブリに隣接して少なくとも一つのカメラを配置する配置工程と、
サセプタアセンブリのエッジ、ガス分配アセンブリのエッジ及び前記間隙を含む、画像をカメラの視野から取得する取得工程と、
取得した画像から、サセプタアセンブリの上面及びガス分配アセンブリの前面の画像位置を確定する位置確定工程と、
取得した画像から、サセプタアセンブリの上面とガス分配アセンブリの前面の間の間隙を測定する間隙測定工程と、
を更に含む、請求項12に記載の方法。 - 軸の周りにサセプタアセンブリを回転させることと、カメラの視野の追加画像を取得することとを更に含む、請求項13に記載の方法。
- 取得したカメラの視野の画像及びガス分配アセンブリとサセプタアセンブリとの間の間隙に基づいて、サセプタアセンブリの上面の形態を確定することを更に含む、請求項13に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562106505P | 2015-01-22 | 2015-01-22 | |
US62/106,505 | 2015-01-22 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016008384A Division JP2016148107A (ja) | 2015-01-22 | 2016-01-20 | 間隙検出用のインテリジェントなハードストップと制御機構 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017216458A JP2017216458A (ja) | 2017-12-07 |
JP6412983B2 true JP6412983B2 (ja) | 2018-10-24 |
Family
ID=56417673
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016008384A Pending JP2016148107A (ja) | 2015-01-22 | 2016-01-20 | 間隙検出用のインテリジェントなハードストップと制御機構 |
JP2017124695A Active JP6412983B2 (ja) | 2015-01-22 | 2017-06-27 | 間隙検出用のインテリジェントなハードストップと制御機構 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016008384A Pending JP2016148107A (ja) | 2015-01-22 | 2016-01-20 | 間隙検出用のインテリジェントなハードストップと制御機構 |
Country Status (6)
Country | Link |
---|---|
US (2) | US9663859B2 (ja) |
JP (2) | JP2016148107A (ja) |
KR (1) | KR102484314B1 (ja) |
CN (1) | CN107112268B (ja) |
TW (1) | TW201629264A (ja) |
WO (1) | WO2016118572A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10273578B2 (en) * | 2014-10-03 | 2019-04-30 | Applied Materials, Inc. | Top lamp module for carousel deposition chamber |
KR102411077B1 (ko) | 2016-06-07 | 2022-06-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 균일성을 위한 윤곽 포켓 및 하이브리드 서셉터 |
CN106707573B (zh) * | 2017-02-17 | 2019-10-15 | 福州京东方光电科技有限公司 | 绑定装置、显示面板、绑定***及其操作方法 |
KR101970780B1 (ko) * | 2017-04-13 | 2019-04-22 | 삼성디스플레이 주식회사 | 기판 처리 시스템 및 기판 반송 방법 |
US10361099B2 (en) * | 2017-06-23 | 2019-07-23 | Applied Materials, Inc. | Systems and methods of gap calibration via direct component contact in electronic device manufacturing systems |
US10971384B2 (en) * | 2018-09-13 | 2021-04-06 | Lam Research Corporation | Auto-calibrated process independent feedforward control for processing substrates |
JP2023519306A (ja) * | 2020-03-27 | 2023-05-10 | ラム リサーチ コーポレーション | レーザ透過型センサを用いたウエハの厚さおよびギャップのその場モニタリング |
US20220108907A1 (en) * | 2020-10-05 | 2022-04-07 | Applied Materials, Inc. | Semiconductor substrate support leveling apparatus |
FI130861B1 (fi) * | 2020-10-12 | 2024-04-26 | Beneq Oy | Atomikerroskasvatuslaitteisto ja menetelmä |
CN115769359A (zh) * | 2021-04-26 | 2023-03-07 | 朗姆研究公司 | 用于测量衬底支撑件和气体分布装置之间的间隙的设备 |
US20230143537A1 (en) * | 2021-11-11 | 2023-05-11 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor processing tool and method of operation |
WO2023211729A1 (en) * | 2022-04-29 | 2023-11-02 | Lam Research Corporation | Automatic gap compensation using light source and sensor for substrate processing systems |
JP2024002304A (ja) * | 2022-06-23 | 2024-01-11 | 東京エレクトロン株式会社 | 成膜装置 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723084A (en) * | 1986-11-13 | 1988-02-02 | General Electric Company | Light conductor brush wear detector assembly |
JP2828544B2 (ja) * | 1992-06-22 | 1998-11-25 | 大日本スクリーン製造株式会社 | 近接露光装置のギャップセンサ |
US5373153A (en) | 1993-01-04 | 1994-12-13 | Motorola, Inc. | Optoelectronic tilt detector having tapered floors extending in same direction |
JP3769802B2 (ja) | 1996-02-09 | 2006-04-26 | 株式会社日立製作所 | 半導体装置の製造方法 |
KR100265212B1 (ko) | 1998-08-27 | 2000-09-15 | 박대성 | 폐펄프슬러지를 이용한 용강 표면보온재 |
JP2000183033A (ja) * | 1998-12-15 | 2000-06-30 | Nec Yamaguchi Ltd | 半導体製造方法及び半導体製造装置 |
KR20000015192U (ko) | 1998-12-31 | 2000-07-25 | 김영환 | 수평조절장치 |
KR100471018B1 (ko) * | 2000-11-28 | 2005-03-08 | 스미도모쥬기가이고교 가부시키가이샤 | 두 개의 대상물 간의 갭 조절장치 및 조절방법 |
US6935038B2 (en) | 2002-02-14 | 2005-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gap gauge |
US7351291B2 (en) | 2002-02-20 | 2008-04-01 | Tokyo Electron Limited | Semiconductor processing system |
US6869641B2 (en) | 2002-07-03 | 2005-03-22 | Unaxis Balzers Ltd. | Method and apparatus for ALD on a rotary susceptor |
US6821563B2 (en) | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
US7007919B2 (en) * | 2003-04-17 | 2006-03-07 | Applied Materials, Inc. | Slit valve method and apparatus |
US20050238889A1 (en) | 2003-07-10 | 2005-10-27 | Nancy Iwamoto | Layered components, materials, methods of production and uses thereof |
JP2006066678A (ja) * | 2004-08-27 | 2006-03-09 | Seiko Epson Corp | 半導体製造装置、半導体製造装置のメンテナンス方法、及び半導体装置の製造方法 |
US20060054090A1 (en) | 2004-09-15 | 2006-03-16 | Applied Materials, Inc. | PECVD susceptor support construction |
JPWO2007018139A1 (ja) | 2005-08-10 | 2009-02-19 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
US7858525B2 (en) | 2007-03-30 | 2010-12-28 | Intel Corporation | Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill |
US7972470B2 (en) | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
CN101919041B (zh) * | 2008-01-16 | 2013-03-27 | 索绍股份有限公司 | 衬底固持器,衬底支撑设备,衬底处理设备以及使用所述衬底处理设备的衬底处理方法 |
US20090211707A1 (en) | 2008-02-22 | 2009-08-27 | Hermes Systems Inc. | Apparatus for gas distribution and its applications |
US8111978B2 (en) * | 2008-07-11 | 2012-02-07 | Applied Materials, Inc. | Rapid thermal processing chamber with shower head |
US20100248397A1 (en) | 2009-03-26 | 2010-09-30 | Tokyo Electron Limited | High temperature susceptor having improved processing uniformity |
JP5551420B2 (ja) * | 2009-12-04 | 2014-07-16 | 東京エレクトロン株式会社 | 基板処理装置及びその電極間距離の測定方法並びにプログラムを記憶する記憶媒体 |
KR101693673B1 (ko) | 2010-06-23 | 2017-01-09 | 주성엔지니어링(주) | 가스분배수단 및 이를 포함한 기판처리장치 |
KR20120001661U (ko) | 2010-08-30 | 2012-03-08 | 주식회사 케이씨텍 | 서셉터 및 그를 구비한 원자층 증착 장치 |
JP5524139B2 (ja) * | 2010-09-28 | 2014-06-18 | 東京エレクトロン株式会社 | 基板位置検出装置、これを備える成膜装置、および基板位置検出方法 |
KR101134277B1 (ko) | 2010-10-25 | 2012-04-12 | 주식회사 케이씨텍 | 원자층 증착 장치 |
US20120225207A1 (en) | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
US20120225206A1 (en) | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
US20120222620A1 (en) | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Atomic Layer Deposition Carousel with Continuous Rotation and Methods of Use |
US9245786B2 (en) * | 2011-06-02 | 2016-01-26 | Applied Materials, Inc. | Apparatus and methods for positioning a substrate using capacitive sensors |
US20130269599A1 (en) | 2012-04-13 | 2013-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and Apparatus for Continuous Pressure Control Processing |
TW201437421A (zh) * | 2013-02-20 | 2014-10-01 | Applied Materials Inc | 用於旋轉料架原子層沉積之裝置以及方法 |
TW201437423A (zh) | 2013-02-21 | 2014-10-01 | Applied Materials Inc | 用於注射器至基板的空隙控制之裝置及方法 |
WO2014144533A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Position and temperature monitoring of ald platen susceptor |
JP2014003312A (ja) * | 2013-08-05 | 2014-01-09 | Nikon Corp | 基板接合装置および基板接合方法 |
-
2016
- 2016-01-19 TW TW105101555A patent/TW201629264A/zh unknown
- 2016-01-20 CN CN201680005492.0A patent/CN107112268B/zh active Active
- 2016-01-20 US US15/001,672 patent/US9663859B2/en active Active
- 2016-01-20 JP JP2016008384A patent/JP2016148107A/ja active Pending
- 2016-01-20 WO PCT/US2016/014039 patent/WO2016118572A1/en active Application Filing
- 2016-01-21 KR KR1020160007718A patent/KR102484314B1/ko active IP Right Grant
-
2017
- 2017-05-30 US US15/608,361 patent/US10197385B2/en active Active
- 2017-06-27 JP JP2017124695A patent/JP6412983B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US9663859B2 (en) | 2017-05-30 |
US20160215396A1 (en) | 2016-07-28 |
KR102484314B1 (ko) | 2023-01-02 |
CN107112268B (zh) | 2020-07-31 |
WO2016118572A1 (en) | 2016-07-28 |
JP2017216458A (ja) | 2017-12-07 |
US20170261312A1 (en) | 2017-09-14 |
CN107112268A (zh) | 2017-08-29 |
KR20160090767A (ko) | 2016-08-01 |
JP2016148107A (ja) | 2016-08-18 |
TW201629264A (zh) | 2016-08-16 |
US10197385B2 (en) | 2019-02-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6412983B2 (ja) | 間隙検出用のインテリジェントなハードストップと制御機構 | |
US11430680B2 (en) | Position and temperature monitoring of ALD platen susceptor | |
KR102567811B1 (ko) | 인시튜 피드백을 통한 웨이퍼 배치 및 갭 제어 최적화 | |
US8216380B2 (en) | Gap maintenance for opening to process chamber | |
US9245786B2 (en) | Apparatus and methods for positioning a substrate using capacitive sensors | |
CN110462810B (zh) | 用于基板处理***中的基板支撑件的基板位置校准方法 | |
US10825662B2 (en) | Method for driving member and processing apparatus | |
WO2011102938A2 (en) | A method for imaging workpiece surfaces at high robot transfer speeds with reduction or prevention of motion-induced distortion | |
US9490154B2 (en) | Method of aligning substrate-scale mask with substrate | |
US20220120559A1 (en) | Measuring apparatus and method of wafer geometry | |
US20220341722A1 (en) | Digital holography for alignment in layer deposition | |
JP6037798B2 (ja) | 全反射蛍光x線分析方法 | |
KR20170018937A (ko) | 정적 어레이 증착 프로세스들에 대한 폐루프 증착 제어를 통해 대면적 기판을 프로세싱하기 위한 장치 및 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180827 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180904 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181001 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6412983 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |