JP7241594B2 - 基板処理方法および基板処理装置 - Google Patents
基板処理方法および基板処理装置 Download PDFInfo
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- JP7241594B2 JP7241594B2 JP2019080689A JP2019080689A JP7241594B2 JP 7241594 B2 JP7241594 B2 JP 7241594B2 JP 2019080689 A JP2019080689 A JP 2019080689A JP 2019080689 A JP2019080689 A JP 2019080689A JP 7241594 B2 JP7241594 B2 JP 7241594B2
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- 238000012545 processing Methods 0.000 title claims description 128
- 239000000758 substrate Substances 0.000 title claims description 107
- 238000003672 processing method Methods 0.000 title claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 108
- 230000002093 peripheral effect Effects 0.000 claims description 66
- 229910052802 copper Inorganic materials 0.000 claims description 54
- 239000010949 copper Substances 0.000 claims description 54
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 45
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 42
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 claims description 21
- 239000005750 Copper hydroxide Substances 0.000 claims description 21
- 229910001956 copper hydroxide Inorganic materials 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 21
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- 239000005751 Copper oxide Substances 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 103
- 238000012546 transfer Methods 0.000 description 27
- 238000010586 diagram Methods 0.000 description 21
- 239000007789 gas Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 238000005260 corrosion Methods 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 12
- 239000012530 fluid Substances 0.000 description 11
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- -1 copper peroxide Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 239000000112 cooling gas Substances 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- AEJIMXVJZFYIHN-UHFFFAOYSA-N copper;dihydrate Chemical compound O.O.[Cu] AEJIMXVJZFYIHN-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Description
<基板処理装置>
図1は、第1実施形態に係る基板処理装置の構成を示す図である。図1に示すように、基板処理装置1は、搬入出ステーション2と、処理ステーション3とを備える。搬入出ステーション2と処理ステーション3とは隣接して設けられる。
次に、処理ユニット16の構成について図2を参照して説明する。図2は、第1実施形態に係る処理ユニット16の構成を示す図である。
ところで、希SPMを用いて基板周縁部の銅膜を除去すると、除去界面周辺の銅膜が腐食する場合がある。本願発明者は、鋭意研究の結果、腐食の原因が、銅膜上に存在する水酸化銅にあることを突き止めた。この点について図3を参照して説明する。図3は、除去界面周辺における腐食の発生メカニズムの一例を示す図である。
次に、本実施形態に係る処理ユニット16が実行する基板処理の内容について図4を参照して説明する。図4は、第1実施形態に係る処理ユニット16が実行する基板処理の手順を示すフローチャートである。図4に示す各処理手順は、制御部18の制御に従って実行される。
次に、第2実施形態に係る加熱部の構成について図9を参照して説明する。図9は、第2実施形態に係る加熱部の構成を示す図である。
次に、第3実施形態に係る基板処理装置の構成について図10を参照して説明する。図10は、第3実施形態に係る基板処理装置の構成を示す図である。
次に、第4実施形態に係る基板処理装置の構成について図12を参照して説明する。図12は、第4実施形態に係る基板処理装置の構成を示す図である。
1 基板処理装置
2 搬入出ステーション
3 処理ステーション
4 制御装置
16 処理ユニット
18 制御部
19 記憶部
30 基板保持機構
40 供給部
50 回収カップ
60 加熱部
70 温調部
402 希SPM供給源
404 リンス液供給源
Claims (6)
- 銅膜が形成された基板を加熱して、前記銅膜に含まれる水酸化銅を酸化銅に変化させる事前加熱工程と、
前記事前加熱工程後の前記基板の周縁部に対し、過酸化水素を含有する処理液を供給して前記周縁部に形成された前記銅膜を除去する除去工程と
を含む、基板処理方法。 - 前記処理液は、硫酸と過酸化水素とが混合されたSPM、フッ酸と過酸化水素とが混合されたFPM、または、塩酸と過酸化水素とが混合されたSC2である、請求項1に記載の基板処理方法。
- 前記事前加熱工程後、前記除去工程前に、前記基板の温度を前記除去工程における処理温度に調節する温調工程
をさらに含む、請求項1または2に記載の基板処理方法。 - 前記処理温度は、前記事前加熱工程における前記基板の加熱温度よりも低い温度である、請求項3に記載の基板処理方法。
- 銅膜が形成された基板を加熱して、前記銅膜に含まれる水酸化銅を酸化銅に変化させる加熱部と、
前記基板の周縁部に対し、過酸化水素を含有する処理液を供給する供給部と
を備える、基板処理装置。 - 前記加熱部によって加熱された前記基板の温度を、前記供給部から前記周縁部に対して前記処理液を供給して前記周縁部に形成された前記銅膜を除去する除去処理における処理温度に調節する温調部
を備える、請求項5に記載の基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019080689A JP7241594B2 (ja) | 2019-04-22 | 2019-04-22 | 基板処理方法および基板処理装置 |
US16/841,716 US11183396B2 (en) | 2019-04-22 | 2020-04-07 | Substrate processing method and substrate processing apparatus |
CN202010267538.4A CN111834198A (zh) | 2019-04-22 | 2020-04-08 | 基板处理方法及基板处理装置 |
TW109112119A TWI833007B (zh) | 2019-04-22 | 2020-04-10 | 基板處理方法及基板處理裝置 |
KR1020200046777A KR20200123746A (ko) | 2019-04-22 | 2020-04-17 | 기판 처리 방법 및 기판 처리 장치 |
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JP2019080689A JP7241594B2 (ja) | 2019-04-22 | 2019-04-22 | 基板処理方法および基板処理装置 |
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JP2020178087A JP2020178087A (ja) | 2020-10-29 |
JP7241594B2 true JP7241594B2 (ja) | 2023-03-17 |
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US (1) | US11183396B2 (ja) |
JP (1) | JP7241594B2 (ja) |
KR (1) | KR20200123746A (ja) |
CN (1) | CN111834198A (ja) |
TW (1) | TWI833007B (ja) |
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TW202326813A (zh) * | 2021-11-04 | 2023-07-01 | 日商東京威力科創股份有限公司 | 基板處理方法及基板處理裝置 |
JP2023139604A (ja) * | 2022-03-22 | 2023-10-04 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269178A (ja) | 1999-03-15 | 2000-09-29 | Nec Corp | エッチング除去方法および装置と洗浄方法および装置 |
JP2001068434A (ja) | 1999-08-25 | 2001-03-16 | Ebara Corp | 銅めっき装置 |
US20020155648A1 (en) | 2001-03-14 | 2002-10-24 | Jalal Ashjaee | Edge and bevel cleaning process and system |
JP2014143172A (ja) | 2012-12-27 | 2014-08-07 | Jsr Corp | 銅膜形成用組成物、銅膜形成方法、銅膜、配線基板および電子機器 |
JP2016017214A (ja) | 2014-07-09 | 2016-02-01 | 東京エレクトロン株式会社 | めっき前処理方法、めっき処理システムおよび記憶媒体 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5184476B2 (ja) | 2009-09-17 | 2013-04-17 | 東京エレクトロン株式会社 | 基板液処理方法、基板液処理装置および記憶媒体 |
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- 2019-04-22 JP JP2019080689A patent/JP7241594B2/ja active Active
-
2020
- 2020-04-07 US US16/841,716 patent/US11183396B2/en active Active
- 2020-04-08 CN CN202010267538.4A patent/CN111834198A/zh active Pending
- 2020-04-10 TW TW109112119A patent/TWI833007B/zh active
- 2020-04-17 KR KR1020200046777A patent/KR20200123746A/ko not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269178A (ja) | 1999-03-15 | 2000-09-29 | Nec Corp | エッチング除去方法および装置と洗浄方法および装置 |
JP2001068434A (ja) | 1999-08-25 | 2001-03-16 | Ebara Corp | 銅めっき装置 |
US20020155648A1 (en) | 2001-03-14 | 2002-10-24 | Jalal Ashjaee | Edge and bevel cleaning process and system |
JP2014143172A (ja) | 2012-12-27 | 2014-08-07 | Jsr Corp | 銅膜形成用組成物、銅膜形成方法、銅膜、配線基板および電子機器 |
JP2016017214A (ja) | 2014-07-09 | 2016-02-01 | 東京エレクトロン株式会社 | めっき前処理方法、めっき処理システムおよび記憶媒体 |
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Publication number | Publication date |
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TW202044399A (zh) | 2020-12-01 |
CN111834198A (zh) | 2020-10-27 |
US20200335356A1 (en) | 2020-10-22 |
TWI833007B (zh) | 2024-02-21 |
US11183396B2 (en) | 2021-11-23 |
JP2020178087A (ja) | 2020-10-29 |
KR20200123746A (ko) | 2020-10-30 |
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