JP7236477B2 - Pvd装置 - Google Patents
Pvd装置 Download PDFInfo
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- JP7236477B2 JP7236477B2 JP2021011067A JP2021011067A JP7236477B2 JP 7236477 B2 JP7236477 B2 JP 7236477B2 JP 2021011067 A JP2021011067 A JP 2021011067A JP 2021011067 A JP2021011067 A JP 2021011067A JP 7236477 B2 JP7236477 B2 JP 7236477B2
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- 235000012431 wafers Nutrition 0.000 claims description 43
- 150000002500 ions Chemical class 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000005240 physical vapour deposition Methods 0.000 claims description 10
- 239000003989 dielectric material Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 230000007717 exclusion Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- -1 AlN ions Chemical class 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Description
チャンバーと、
スパッタリング材料をスパッターすることのできるターゲットを含む、1つ又はそれより多くの一次磁場を作り出すパルスDCマグネトロンデバイスと、
チャンバー中に配置された基板支持体と、
使用中に、ターゲットと基板を2.5~10cmの間隔で離間させるように構成された二次磁場製造デバイスと、
誘電性材料が堆積する間に二次磁場がチャンバー内に作り出されるように、二次磁場製造デバイスを制御するように構成されたコントローラーとを含み、該二次磁場が、チャンバーの1つ又はそれより多くの壁に向けて電子を誘導して、基板の外周部分からイオンを離すドリフト電場を作り出す、装置を提供する。
Claims (12)
- パルスDCマグネトロンスパッタリングによって金属ターゲットからウェーハ上に誘電体材料を堆積するためのPVD装置であって、
柱状のチャンバと、
前記チャンバの上部に位置するターゲットの近くに1つまたは複数の一次磁場を生成する回転マグネトロンデバイスであって、スパッタリング材料がターゲットからスパッタされる回転マグネトロンデバイスと、
前記ウェーハと前記ターゲットの距離が2.5~10cmとなるように前記チャンバ内に配置された、RF駆動されるウェーハ支持体であって、前記ターゲットの表面に平行に配向され、前記ターゲットと軸方向に整列し、前記ターゲットの後側における前記回転マグネトロンデバイスの回転パスは、ウェーハ支持体上のウェーハの直径を超えるウェーハ支持体と、
不活性ガスおよび反応性ガスの供給源と、
前記ターゲットと前記ウェーハ支持体との間のチャンバの本体の周りに配置された二次磁場生成デバイスであって、プラズマをチャンバの1つまたは複数の壁に向かって膨張させるほぼ軸方向の二次磁場を生成し、電磁石が含まれている、二次磁場生成装置と、
前記二次磁場生成装置を制御するように構成されたコントローラであって、誘電体材料がターゲットから堆積され、ウェーハの周辺部分の厚さの増加させる、二次磁場がチャンバ内に生成されるように制御するコントローラと、
を含む、PVD装置。 - 前記ウェーハ支持体は、150mm以上の幅を有するウェーハを支持するように構成される、請求項1に記載の装置。
- 前記ターゲットの幅が前記ウェーハの幅よりも大きい、請求項1に記載の装置。
- 前記電磁石が、単一の電磁石または整列した極性を有する一連の電磁石であり、すべての電磁石が、電子をチャンバの1つまたは複数の壁に向けて誘導して、ウェーハの周辺部分からイオンを遠ざける、ドリフト電界生成する、請求項1に記載の装置。
- 前記電磁石にDC電流を印加するための電源をさらに備える、請求項4に記載の装置。
- 前記ターゲットは、DC電源によってパルスDC電力が供給される、請求項1に記載の装置。
- 前記ターゲットに1~10kWのパルスDC電力を供給するDC電源をさらに備える、請求項5に記載の装置。
- 前記電磁石が、330~660アンペアターンの磁場強度を有する、請求項1に記載の装置。
- 前記電磁石が、10~20アンペアのDC電流を使用するように構成される、請求項1に記載の装置。
- 前記電磁石が、前記チャンバ内のウェーハ支持体と少なくとも部分的に同じ高さである、請求項1に記載の装置。
- ウェーハをさらに含む、請求項1に記載の装置。
- アルミニウムターゲットおよびArおよびN2ガスの供給源を含む、請求項1に記載の装置。
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GB201815216D0 (en) * | 2018-09-18 | 2018-10-31 | Spts Technologies Ltd | Apparatus and a method of controlling thickness variation in a material layer formed using physical vapour deposition |
CN111349899B (zh) * | 2018-12-20 | 2022-02-25 | 上海陛通半导体能源科技股份有限公司 | 物理气相沉积材料的方法和设备 |
GB201909538D0 (en) * | 2019-07-02 | 2019-08-14 | Spts Technologies Ltd | Deposition apparatus |
CN110527967B (zh) * | 2019-09-23 | 2020-09-11 | 上海陛通半导体能源科技股份有限公司 | 物理气相沉积设备 |
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US20160289815A1 (en) | 2016-10-06 |
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