JP7224217B2 - 成膜方法及び成膜装置 - Google Patents
成膜方法及び成膜装置 Download PDFInfo
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Description
図1を参照し、一実施形態の成膜方法の一例について説明する。図1は、一実施形態の成膜方法の一例を示すフローチャートである。
図4を参照し、一実施形態の成膜方法を実行する成膜装置の一例について説明する。図4は、一実施形態の成膜装置の構成例を示す図である。
次に、前述の成膜装置1を用いてSiOCN膜を成膜する場合の処理条件の一例について説明する。なお、以下において、処理温度はステージ3の温度を意味し、処理圧力は処理容器2内の圧力を意味する。
Ar流量 :100~6000sccm
処理時間 :0.05~20秒
処理温度 :200~500℃
処理圧力 :100~8000Pa
処理時間 :0.1~10秒
Ar流量 :100~6000sccm
処理時間 :0.2~30秒
処理温度 :200~500℃
処理圧力 :100~8000Pa
処理時間 :0.1~10秒
Ar流量 :100~6000sccm
処理時間 :1~60秒
処理温度 :200~500℃
処理圧力 :100~8000Pa
処理時間 :0.1~1000秒
Ar流量 :100~6000sccm
処理時間 :0.1~5秒
処理温度 :200~500℃
処理圧力 :100~8000Pa
処理時間 :0.1~5秒
次に、一実施形態の成膜方法の効果を確認するために行った実施例について説明する。
2 処理容器
5 ガス供給部
6 ガス供給路
100 制御部
Claims (9)
- 基板の上に珪素と炭素と窒素とを含む膜を形成する第1の工程と、
ヒドロキシ基を含む酸化剤により前記膜を酸化するステップと、
前記膜を酸化するステップの後、前記基板に窒化ガスを供給するステップと、
を含む第2の工程と、
を有し、
前記第1の工程と前記第2の工程とを繰り返し実行し、
前記第1の工程では、前記基板に珪素と炭素とを含む原料を供給するステップと前記基板に窒化ガスを供給するステップとを複数回繰り返す、
成膜方法。 - 前記基板に珪素と炭素とを含む原料を供給するステップは、
前記基板に珪素と炭素とを含む原料ガスを供給するステップ及び珪素含有ガスと炭素含有ガスとを供給するステップの少なくとも1つである、
請求項1に記載の成膜方法。 - 前記珪素と炭素とを含む原料ガスは、Si-C結合を有するガスである、
請求項2に記載の成膜方法。 - 前記基板を大気に曝露することなく行われ、前記基板にプラズマ処理を行う第3の工程を有する、
請求項1乃至3のいずれか一項に記載の成膜方法。 - 前記窒化ガスは、NH3、N2H2、N2H4及び有機ヒドラジン化合物からなる群から選択される少なくとも1つのガスである、
請求項1乃至4のいずれか一項に記載の成膜方法。 - 前記酸化剤は、H2O、H2O2、D2O及びアルコールからなる群から選択される少なくとも1つのガスである、
請求項1乃至5のいずれか一項に記載の成膜方法。 - 前記プラズマ処理を行うガスは、水素含有ガス、不活性ガス及び窒素含有ガスからなる群から選択される少なくとも1つのガスである、
請求項4に記載の成膜方法。 - 前記プラズマ処理を行うガスは、H2、N2、Ar、NH3からなる群から選択される少なくとも1つのガスである、
請求項7に記載の成膜方法。 - 基板を収容する処理容器と、
前記処理容器内にガスを供給するガス供給部と、
制御部と、
を備え、
前記制御部は、
前記基板の上に珪素と炭素と窒素とを含む膜を形成する第1の工程と、
ヒドロキシ基を含む酸化剤により前記膜を酸化するステップと、
前記膜を酸化するステップの後、前記基板に窒化ガスを供給するステップと、
を含む第2の工程と、
を繰り返し実行するように前記ガス供給部を制御するよう構成され、
前記第1の工程では、前記基板に珪素と炭素とを含む原料を供給するステップと前記基板に窒化ガスを供給するステップとを複数回繰り返す、
成膜装置。
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