JP7218048B2 - 半導体発光装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 44
- 230000005496 eutectics Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 13
- 238000009736 wetting Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
11-1、11-2、…、11-6、11:p側電極
12:n側電極
2:サブマウント基板
21:p側配線パターン層
22:n側配線パターン層
3:半導体発光装置
31-1、31-2、…、31-6、32:AuSn層
31’-1、31’-2、…、31’-6、32’:AuSn共晶接合層
4、4’:半導体発光装置
40:AuSn層要素
40’:AuSn共晶接合層要素
41-1、41-2、…、41-6、42:AuSn層
41’-1、41’-2、…、41’-6、42’:AuSn共晶接合層
Claims (15)
- 第1、第2の電極を有する半導体発光素子と、
前記各第1、第2の電極に電気的に接続された第1、第2の配線パターン層を有する基板と
を具備し、
少なくとも、前記第1の電極と前記第1の配線パターン層とは前記第1の電極の数及び前記第1の配線パターン層の数のいずれより大きい数の複数の第1の導電性接合層要素によって接合されたか、または、
前記第2の電極と前記第2の配線パターン層とは前記第2の電極の数及び前記第2の配線パターン層の数のいずれより大きい数の複数の第2の導電性接合層要素によって接合されたか、のいずれか一方であり、
さらに、前記複数の第1の導電性接合層要素の両端及び/又は前記複数の第2の導電性接合層要素の両端に該第1及び/又は第2の導電性接合層要素に対して非濡れ性を有する表面をもつ層を設けた半導体発光装置。 - 前記複数の第1の導電性接合層要素及び/又は前記複数の第2の導電性接合層要素は1次元状又は2次元状に配置された請求項1に記載の半導体発光装置。
- 前記第1の電極は複数存在し、前記第2の電極は1個存在し、該各第1、第2の電極は短辺の2倍以上の長辺を有する矩形状をなしている請求項1又は2に記載の半導体発光装置。
- 前記導電性接合層要素はAuSn共晶接合層要素である請求項1~3のいずれかに記載の半導体発光装置。
- 前記導電性接合層要素はAg粒子焼結体要素又はAu粒子焼結体要素である請求項1~3のいずれかに記載の半導体発光装置。
- 前記第1の電極はp側電極であり、前記第2の電極はn側電極である請求項1~5のいずれかに記載の半導体発光装置。
- 第1、第2の電極を有する半導体発光素子を準備する第1の工程と、
第1、第2の配線パターン層を有する基板を準備する第2の工程と、
前記第1の電極の数及び前記第1の配線パターン層の数のいずれより大きい数の複数の第1の導電性接合層要素の両端及び/又は前記第2の電極の数及び前記第2の配線パターン層の数のいずれより大きい数の複数の第2の導電性接合層要素の両端に該第1及び/又は第2の導電性接合層要素に対して非濡れ性を有する表面をもつ層を形成する第3の工程と
少なくとも、
前記第1の電極及び前記第1の配線パターン層のいずれか一方に前記複数の第1の導電性接合層要素を形成するか、又は、
前記第2の電極及び前記第2の配線パターン層のいずれか一方に前記複数の第2の導電性接合層要素を形成するか、
のいずれか一方を行う第4の工程と、
前記第1の電極と前記第1の配線パターン層とを接合すると共に前記第2の電極と前記第2の配線パターン層とを接合する第5の工程と
を具備する半導体発光装置の製造方法。 - 前記複数の第1の導電性接合層要素及び/又は前記複数の第2の導電性接合層要素は1次元状又は2次元状に配置された請求項7に記載の半導体発光装置の製造方法。
- 前記第1の電極は複数存在し、前記第2の電極は1個存在し、該各第1、第2の電極は短辺の2倍以上の長辺を有する矩形状をなしている請求項7又は8のいずれかに記載の半導体発光装置の製造方法。
- 前記導電性接合層要素はAuSn層要素である請求項7~9のいずれかに記載の半導体発光装置の製造方法。
- 前記導電性接合層要素はAg粒子焼結体要素又はAu粒子焼結体要素である請求項7~9のいずれかに記載の半導体発光装置の製造方法。
- 前記第1の電極はp側電極であり、前記第2の電極はn側電極である請求項7~11のいずれかに記載の半導体発光装置の製造方法。
- 第1、第2の電極を有する半導体発光素子と、
前記各第1、第2の電極に電気的に接続された第1、第2の配線パターン層を有する基板と
を具備し、
少なくとも、前記第1の電極と前記第1の配線パターン層とは前記第1の電極の数及び前記第1の配線パターン層の数のいずれより大きい数の複数の第1の導電性接合層要素によって接合されたか、または、
前記第2の電極と前記第2の配線パターン層とは前記第2の電極の数及び前記第2の配線パターン層の数のいずれより大きい数の複数の第2の導電性接合層要素によって接合されたか、のいずれか一方であり、
前記第1の電極は複数存在し、前記第2の電極は1個存在し、該各第1、第2の電極は短辺の2倍以上の長辺を有する矩形状をなしている半導体発光装置。 - 前記非濡れ性を有する表面をもつ層は、前記配線パターン層に形成され、
前記非濡れ性を有する表面は、前記第1及び第2の導電性接合層要素の表面より前記基板側に位置する請求項1~6のいずれかに記載の半導体発光装置。 - 前記非濡れ性を有する表面をもつ層の厚さは前記第1及び第2の導電性接合層要素の厚さより小さい請求項1~6のいずれかに記載の半導体発光装置。
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JP2018099340A JP7218048B2 (ja) | 2018-05-24 | 2018-05-24 | 半導体発光装置及びその製造方法 |
US16/410,881 US20190363233A1 (en) | 2018-05-24 | 2019-05-13 | Semiconductor light emitting apparatus having multiple conductive bonding layer elements and its manufacturing method |
EP19175494.4A EP3573114A1 (en) | 2018-05-24 | 2019-05-20 | Semiconductor light emitting apparatus having multiple conductive bonding layer elements and its manufacturing method |
CN201910428116.8A CN110534636B (zh) | 2018-05-24 | 2019-05-22 | 具有多个导电接合层元件的半导体发光装置及其制造方法 |
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US20080054290A1 (en) | 2006-09-05 | 2008-03-06 | Epistar Corporation | Light emitting device and the manufacture method thereof |
JP2010226086A (ja) | 2009-02-27 | 2010-10-07 | Toyoda Gosei Co Ltd | 半導体発光素子の実装体の製造方法、発光装置の製造方法及び半導体発光素子 |
JP2012519954A (ja) | 2009-03-04 | 2012-08-30 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | コンプライアントなボンディング構造を使用して半導体装置をボンディングする方法 |
US20140203451A1 (en) | 2013-01-22 | 2014-07-24 | Samsung Electronics Co., Ltd. | Electronic device package and packaging substrate for the same |
JP2017523613A (ja) | 2014-07-31 | 2017-08-17 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 発光ダイオード |
JP2017212273A (ja) | 2016-05-24 | 2017-11-30 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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US6903376B2 (en) * | 1999-12-22 | 2005-06-07 | Lumileds Lighting U.S., Llc | Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
JP4580633B2 (ja) * | 2003-11-14 | 2010-11-17 | スタンレー電気株式会社 | 半導体装置及びその製造方法 |
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WO2009063638A1 (ja) * | 2007-11-15 | 2009-05-22 | Panasonic Corporation | 半導体発光装置 |
JP5375041B2 (ja) * | 2008-11-13 | 2013-12-25 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
KR101171361B1 (ko) * | 2010-11-05 | 2012-08-10 | 서울옵토디바이스주식회사 | 발광 다이오드 어셈블리 및 그의 제조 방법 |
JP6358671B2 (ja) | 2016-12-20 | 2018-07-18 | 株式会社大一商会 | 遊技機 |
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2018
- 2018-05-24 JP JP2018099340A patent/JP7218048B2/ja active Active
-
2019
- 2019-05-13 US US16/410,881 patent/US20190363233A1/en not_active Abandoned
- 2019-05-20 EP EP19175494.4A patent/EP3573114A1/en active Pending
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JP2007251021A (ja) | 2006-03-17 | 2007-09-27 | Nichia Chem Ind Ltd | 発光装置 |
US20080054290A1 (en) | 2006-09-05 | 2008-03-06 | Epistar Corporation | Light emitting device and the manufacture method thereof |
JP2010226086A (ja) | 2009-02-27 | 2010-10-07 | Toyoda Gosei Co Ltd | 半導体発光素子の実装体の製造方法、発光装置の製造方法及び半導体発光素子 |
JP2012519954A (ja) | 2009-03-04 | 2012-08-30 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | コンプライアントなボンディング構造を使用して半導体装置をボンディングする方法 |
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JP2017212273A (ja) | 2016-05-24 | 2017-11-30 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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EP3573114A1 (en) | 2019-11-27 |
US20190363233A1 (en) | 2019-11-28 |
JP2019204885A (ja) | 2019-11-28 |
CN110534636A (zh) | 2019-12-03 |
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