JP7215273B2 - 接合構造体 - Google Patents
接合構造体 Download PDFInfo
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- JP7215273B2 JP7215273B2 JP2019055366A JP2019055366A JP7215273B2 JP 7215273 B2 JP7215273 B2 JP 7215273B2 JP 2019055366 A JP2019055366 A JP 2019055366A JP 2019055366 A JP2019055366 A JP 2019055366A JP 7215273 B2 JP7215273 B2 JP 7215273B2
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- 239000002245 particle Substances 0.000 claims description 85
- 239000000463 material Substances 0.000 claims description 52
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 38
- 239000010949 copper Substances 0.000 claims description 34
- 229910052802 copper Inorganic materials 0.000 claims description 34
- 239000002923 metal particle Substances 0.000 claims description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 23
- 229910052709 silver Inorganic materials 0.000 claims description 23
- 239000004332 silver Substances 0.000 claims description 23
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052718 tin Inorganic materials 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 description 31
- 239000002184 metal Substances 0.000 description 31
- 239000010410 layer Substances 0.000 description 30
- 239000000919 ceramic Substances 0.000 description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 238000004088 simulation Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000011889 copper foil Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910002012 Aerosil® Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011164 primary particle Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229920004482 WACKER® Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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Description
SQRT(X)/SQRT(Y)≧2.9209×λ-0.141・・・(1)
この場合、LEDチップ及びパワーモジュールは、近年の電気機器の高機能化や小型化に伴って発熱量が増加しているが、本発明の接合構造体は放熱性が高いため、被接合部材が、LEDチップやパワーモジュールであっても優れた放熱性を示し、熱によるLEDチップ及びパワーモジュールの劣化を抑制することができる。
この場合、導電性接合材は高い熱伝導性を有するので、より確実に、被接合部材にて発生した熱を、外部に効率よく放出させることができる。また、金属粒子の焼結体は、高温状態であっても溶融して流動性を持つことがないので、被接合部材を安定して固定することができる。
図1は、本発明の一実施形態に係る接合構造体の概略断面図である。
SQRT(X)/SQRT(Y)≧2.9209×λ-0.141・・・(1)
絶縁層30の膜厚は、特には制限されるものではないが、1μm以上200μm以下の範囲内にあることが好ましく、3μm以上100μm以下の範囲内にあることが特に好ましい。
接合構造体は、例えば、金属ベース基板の回路パターンに金属粒子ペーストを塗布して金属粒子ペースト層を形成する塗布工程と、金属粒子ペースト層の上に、被接合部材を積載する積載工程と、被接合部材を積載した金属ベース基板を加熱して、金属粒子焼結体を生成させる接合工程とを含む方法によって製造することができる。
例えば、本実施形態の接合構造体1においては、導電性接合材60として、銀粒子、銅粒子、スズで被覆された銅粒子などの金属粒子の焼結体を例示したが、導電性接合材60はこれらに限定されるものではない。例えば、導電性接合材60として半田を用いてもよい。
図2は、前記式(1)を検証するためのシミュレーションに用いた接合構造体を模式的に示す断面図である。図3は、図2の接合構造体の平面図である。シミュレーションはLISA(Sonnenhof Holdings)を用いて行った。
図2、3に示す接合構造体1Sにおいて、金属ベース基板10Sは、金属基板20S、絶縁層30Sと、銅箔40Sとがこの順で積層された積層体である。銅箔40Sは絶縁層30Sの上に全体に形成されている。被接合部材70Sは、AIN(窒化アルミニウム)部材72Sを介して電極端子71Sと接続している。被接合部材70Sは、LEDチップとし、電極端子71Sは銅端子とした。接合構造体1Sの各部材の特性は、下記の通りとした。
絶縁層30S:厚み:100μm、熱伝導度:10W/mK
銅箔40S:厚み:35μm、熱伝導度:400W/mK
導電性接合材60S:厚み、熱伝導度は、下記の表1に記載した。
電極端子71S:厚み:35μm、熱伝導度:400W/mK
AIN部材72S:厚み:635μm、熱伝導度:170W/mK
被接合部材70S:厚み:100μm、熱伝導度:1000000000W/mK、発熱密度:20W/m3
銅箔40Sと導電性接合材60Sとの接触面積X(mm2)、電極端子71Sと導電性接合材60Sとの接触面積Y(mm2)、SQRT(X)/SQRT(Y)は、下記の表1に記載した。
また、接合構造体1Sの最高温度と最低温度の温度差と、被接合部材70Sの発熱量(W)から、下記の式より接合構造体1S内の熱抵抗を算出した。そして、導電性接合材60Sの熱伝導度λが同じで、SQRT(X)/SQRT(Y)が異なる接合構造体1Sについて、SQRT(X)/SQRT(Y)=1.2の熱抵抗を100とした場合の熱抵抗の相対値を求めた。この結果を、相対熱抵抗(%)として表1に示す。
熱抵抗(K/W)=(最高温度-最低温度)/発熱量
銅基板(30mm×20mm×0.3mmt)の上に、アルミナ粒子含有ポリドイミド樹脂を含む絶縁層(厚み:30μm、アルミナ粒子含有量:60体積%)と、銅層(厚み:35μm)とがこの順で積層され銅ベース基板を作製した。この銅ベース基板の銅層をエッチング法によりエッチングして、回路パターンを形成した。
銀粒子ペーストの代わりに銅粒子ペースト(銅粒子の平均粒子径:150nm)を用いたこと以外は、本発明例2と同様にして、銅ベース基板とLEDチップとが銅粒子焼結体を介して接合した接合構造体を作製した。
得られた接合構造体の回路パターンと銀粒子焼結体との接触面積(X)、LEDチップの電極端子と銀粒子焼結体との接触面積(Y)、銅粒子焼結体の熱伝導度λをそれぞれ測定した。そして、SQRT(X)/SQRT(Y)と、2.9209×λ-0.141とを算出した結果、SQRT(X)/SQRT(Y)は23.2であり、2.9209×λ-0.141は1.3であった。また、得られた接合構造体を目視で観察した結果、LEDチップの位置ずれや浮きは確認されなかった。
銀粒子ペーストの代わりにスズ被覆銅粒子ペースト(スズ被覆銅粒子の平均粒子径:9μm)を用いたこと以外は、本発明例2と同様にして、銅ベース基板とLEDチップとがスズ被覆銅粒子焼結体を介して接合した接合構造体を作製した。
得られた接合構造体の回路パターンと銀粒子焼結体との接触面積(X)、LEDチップの電極端子と銀粒子焼結体との接触面積(Y)、スズ被覆銅粒子焼結体の熱伝導度λをそれぞれ測定した。そして、SQRT(X)/SQRT(Y)と、2.9209×λ-0.141とを算出した結果、SQRT(X)/SQRT(Y)は23.2であり、2.9209×λ-0.141は1.8であった。また、得られた接合構造体を目視で観察した結果、LEDチップの位置ずれや浮きは確認されなかった。
10、10S 金属ベース基板
20、20S 金属基板
30、30S 絶縁層
31 絶縁性樹脂
32 セラミック粒子
40 回路パターン
40S 銅箔
60、60S 導電性接合材
70、70S 被接合部材
71、71S 電極端子
72S AIN(窒化アルミニウム)部材
Claims (3)
- 回路パターンを有する基板と、電極端子を備えた被接合部材とが導電性接合材を介して接合した接合構造体であって、
前記回路パターンと前記導電性接合材との接触面積をX(単位:mm2)とし、前記電極端子と前記導電性接合材との接触面積をY(単位:mm2)とし、前記導電性接合材の熱伝導度をλ(単位:W/mK)としたときに下記の式(1)を満足し、
前記λが100W/mK以上であって、SQRT(X)/SQRT(Y)が7.3未満であることを特徴とする接合構造体。
SQRT(X)/SQRT(Y)≧2.9209×λ-0.141・・・(1) - 前記被接合部材が、LEDチップ、もしくはパワーモジュールであることを特徴とする請求項1に記載の接合構造体。
- 前記導電性接合材が、銀粒子、銅粒子、スズで被覆された銅粒子からなる群より選ばれる少なくとも1種の金属粒子の焼結体であることを特徴とする請求項1に記載の接合構造体。
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JP2005129874A (ja) | 2003-10-27 | 2005-05-19 | Seiko Epson Corp | 半導体チップ、半導体チップの製造方法、半導体実装基板、電子デバイスおよび電子機器 |
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JP5151150B2 (ja) * | 2006-12-28 | 2013-02-27 | 株式会社日立製作所 | 導電性焼結層形成用組成物、これを用いた導電性被膜形成法および接合法 |
JP5611537B2 (ja) * | 2009-04-28 | 2014-10-22 | 日立化成株式会社 | 導電性接合材料、それを用いた接合方法、並びにそれによって接合された半導体装置 |
JP5431595B2 (ja) * | 2011-03-28 | 2014-03-05 | 日立化成株式会社 | 樹脂組成物、樹脂シート、樹脂シート硬化物、樹脂シート積層体、樹脂シート積層体硬化物及びその製造方法、半導体装置、並びにled装置 |
WO2013122126A1 (ja) * | 2012-02-14 | 2013-08-22 | 三菱マテリアル株式会社 | はんだ接合構造、パワーモジュール、ヒートシンク付パワーモジュール用基板及びそれらの製造方法、並びにはんだ下地層形成用ペースト |
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JP2005129874A (ja) | 2003-10-27 | 2005-05-19 | Seiko Epson Corp | 半導体チップ、半導体チップの製造方法、半導体実装基板、電子デバイスおよび電子機器 |
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