JP7191817B2 - 8より高いpHにおいて分散性があるアルミナの製造方法 - Google Patents
8より高いpHにおいて分散性があるアルミナの製造方法 Download PDFInfo
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- JP7191817B2 JP7191817B2 JP2019510828A JP2019510828A JP7191817B2 JP 7191817 B2 JP7191817 B2 JP 7191817B2 JP 2019510828 A JP2019510828 A JP 2019510828A JP 2019510828 A JP2019510828 A JP 2019510828A JP 7191817 B2 JP7191817 B2 JP 7191817B2
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- Prior art keywords
- acid
- slurry
- alumina
- aged
- modified
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims description 91
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000002002 slurry Substances 0.000 claims description 99
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 71
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 24
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 claims description 19
- 229910001593 boehmite Inorganic materials 0.000 claims description 17
- 230000032683 aging Effects 0.000 claims description 15
- 150000003628 tricarboxylic acids Chemical class 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 9
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 6
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 claims description 6
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 6
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 4
- TXXHDPDFNKHHGW-UHFFFAOYSA-N muconic acid Chemical compound OC(=O)C=CC=CC(O)=O TXXHDPDFNKHHGW-UHFFFAOYSA-N 0.000 claims description 4
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 claims description 4
- 238000001694 spray drying Methods 0.000 claims description 4
- KQTIIICEAUMSDG-UHFFFAOYSA-N tricarballylic acid Chemical compound OC(=O)CC(C(O)=O)CC(O)=O KQTIIICEAUMSDG-UHFFFAOYSA-N 0.000 claims description 4
- 239000001124 (E)-prop-1-ene-1,2,3-tricarboxylic acid Substances 0.000 claims description 3
- 229940091181 aconitic acid Drugs 0.000 claims description 3
- GTZCVFVGUGFEME-IWQZZHSRSA-N cis-aconitic acid Chemical compound OC(=O)C\C(C(O)=O)=C\C(O)=O GTZCVFVGUGFEME-IWQZZHSRSA-N 0.000 claims description 3
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 claims description 3
- 229940018557 citraconic acid Drugs 0.000 claims description 3
- 239000001530 fumaric acid Substances 0.000 claims description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 3
- 239000011976 maleic acid Substances 0.000 claims description 3
- HNEGQIOMVPPMNR-NSCUHMNNSA-N mesaconic acid Chemical compound OC(=O)C(/C)=C/C(O)=O HNEGQIOMVPPMNR-NSCUHMNNSA-N 0.000 claims description 3
- HNEGQIOMVPPMNR-UHFFFAOYSA-N methylfumaric acid Natural products OC(=O)C(C)=CC(O)=O HNEGQIOMVPPMNR-UHFFFAOYSA-N 0.000 claims description 3
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 claims description 3
- XVOUMQNXTGKGMA-OWOJBTEDSA-N (E)-glutaconic acid Chemical compound OC(=O)C\C=C\C(O)=O XVOUMQNXTGKGMA-OWOJBTEDSA-N 0.000 claims description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 2
- ODBLHEXUDAPZAU-ZAFYKAAXSA-N D-threo-isocitric acid Chemical compound OC(=O)[C@H](O)[C@@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-ZAFYKAAXSA-N 0.000 claims description 2
- ODBLHEXUDAPZAU-FONMRSAGSA-N Isocitric acid Natural products OC(=O)[C@@H](O)[C@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-FONMRSAGSA-N 0.000 claims description 2
- TXXHDPDFNKHHGW-CCAGOZQPSA-N Muconic acid Natural products OC(=O)\C=C/C=C\C(O)=O TXXHDPDFNKHHGW-CCAGOZQPSA-N 0.000 claims description 2
- 239000001361 adipic acid Substances 0.000 claims description 2
- 235000011037 adipic acid Nutrition 0.000 claims description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 2
- 229910001680 bayerite Inorganic materials 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 229910001679 gibbsite Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- ODBLHEXUDAPZAU-UHFFFAOYSA-N threo-D-isocitric acid Natural products OC(=O)C(O)C(C(O)=O)CC(O)=O ODBLHEXUDAPZAU-UHFFFAOYSA-N 0.000 claims description 2
- 239000000047 product Substances 0.000 description 24
- 239000002253 acid Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 12
- 239000006185 dispersion Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 150000003627 tricarboxylic acid derivatives Chemical class 0.000 description 8
- 239000007921 spray Substances 0.000 description 7
- -1 aluminum alkoxide Chemical class 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000000908 ammonium hydroxide Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 4
- 230000007062 hydrolysis Effects 0.000 description 4
- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000004034 viscosity adjusting agent Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 150000001991 dicarboxylic acids Chemical class 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 2
- 102100030089 ATP-dependent RNA helicase DHX8 Human genes 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- 101000864666 Homo sapiens ATP-dependent RNA helicase DHX8 Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000002431 foraging effect Effects 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 235000011083 sodium citrates Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000001393 triammonium citrate Substances 0.000 description 1
- 235000011046 triammonium citrate Nutrition 0.000 description 1
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 1
- 235000019263 trisodium citrate Nutrition 0.000 description 1
- 229940038773 trisodium citrate Drugs 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
- C01F7/021—After-treatment of oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
- C01F7/021—After-treatment of oxides or hydroxides
- C01F7/026—Making or stabilising dispersions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
- C01F7/04—Preparation of alkali metal aluminates; Aluminium oxide or hydroxide therefrom
- C01F7/14—Aluminium oxide or hydroxide from alkali metal aluminates
- C01F7/141—Aluminium oxide or hydroxide from alkali metal aluminates from aqueous aluminate solutions by neutralisation with an acidic agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
- C01F7/44—Dehydration of aluminium oxide or hydroxide, i.e. all conversions of one form into another involving a loss of water
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/40—Compounds of aluminium
- C09C1/407—Aluminium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Dispersion Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Catalysts (AREA)
- Colloid Chemistry (AREA)
Description
本出願は、2016年8月29日に出願された米国特許出願第62/380,770号明細書への優先権を主張し、その特許出願の開示は引用することによりすべての目的のために本明細書の内容となる。
クエン酸は酸化アルミナ(alumina oxides)のための有効な分散剤として高分散性アルミナの分野において周知である。一般にクエン酸は酸性pH(7未満のpH)において分散剤として用いられるが、しかしながら塩基性pHにおいて分散されるアルミナを安定化するためにクエン酸を用いる市販の製品が存在する。クエン酸は有効な分散剤であるが、限界は、7より高いpHにおいてこれらのクエン酸分散剤が合理的な重量負荷で(例えば10重量%のAl2O3において)非常に粘性となる傾向を有することである。これは多くの用途におけるそれらの使用を制限する。この粘度の問題を解決するために、これらのアルミナ分散系に粘度調整剤を加える。これらの粘度調整剤の添加に伴う問題は、アルミナ分散系へのそれら、例えばポリアクリレート、の導入が分散系ならびに乾燥及び焼成の後に得られる生成物の性質に影響する場合があることである。
本発明の第1の側面に従い、以下の:
i)アルミナスラリを準備する段階;
ii)アルミナスラリを熟成させて38-450Å(120面)の結晶子サイズを有するアルミナを含む熟成アルミナスラリを形成する段階;
iii)熟成アルミナスラリにトリカルボン酸を加えて酸改質スラリを形成し;
iv)酸改質スラリを75℃-125℃の温度で熟成させて生成物スラリ(product slurry)を形成する段階;および
v)生成物スラリを噴霧乾燥する段階
を含むアルミナの製造方法を提供する。前記方法は、方法の段階iii)においてトリカルボン酸と一緒にジカルボン酸を加えることによるか、あるいは、段階v)における噴霧乾燥の前で、かつ、段階iv)の後に、生成物スラリにジカルボン酸を加えることにより特徴付けられる。
本発明の第1の側面に従い、8より高いpHにおいて分散性である、より好ましくは9より高いpHにおいて分散性である、そして最も好ましくは9.5より高いpHにおいて分散性であるアルミナの製造方法を提供する。前記方法は、アルミナスラリ、例えば(水中におけるベーマイトの加水分解により調製される)ベーマイトスラリを準備し、スラリを95-220℃の温度で約30分-8時間、熱水的に熟成させて、典型的には40-180Å(120面)、より好ましくは60-140Å(120面)である所望の結晶子サイズの熟成アルミナスラリを形成することを含み、最も好ましくは、熟成アルミナスラリは80-100Å(120面)の結晶子サイズを有するアルミナを含む。
ここで限定的ではない実施例及び図により本発明を説明する。
アルミニウムアルコキシドの加水分解を介してベーマイトスラリを調製し、120℃において2時間熱水的に熟成させ、95Å(120結晶面(crystallite plane))の結晶子サイズを有するアルミナを得た。5重量%のクエン酸及び3重量%のマロン酸(アルミナ含有量に基づく重量パーセンテージ)を水中で予備混合し、次いでベーマイトスラリに加えて酸改質スラリを形成した。酸改質スラリを105℃で1時間熟成
させて生成物スラリを形成し、次いで生成物スラリを噴霧乾燥し、生成物を集めた。
アルミニウムアルコキシドの加水分解を介してベーマイトスラリを調製し、120℃において2時間熱水的に熟成させ、95Å(120結晶面)の結晶子サイズを有するアルミナを得た。5重量%のクエン酸(アルミナ含有量に基づく重量パーセンテージ)をベーマイトスラリに加えて酸改質スラリを形成した。酸改質スラリを次いで105℃で1時間熟成させて生成物スラリを形成した。生成物スラリを次いで3重量%のマロン酸の添加により改質し、30分間撹拌した。改質生成物スラリを次いで噴霧乾燥し、生成物を集めた。
実施例1のとおりにベーマイトスラリを準備し、熱水的に熟成させ、95Å(120結晶面)の結晶子サイズを有するアルミナを得た。5重量%のクエン酸及び3重量%のマロン酸(アルミナ含有量に基づく重量パーセンテージ)を水中で予備混合し、ベーマイトスラリに加えて酸改質スラリを形成した。酸改質スラリを次いで噴霧乾燥し、生成物を集めた。
実施例1のとおりにベーマイトスラリを準備し、熱水的に熟成させ、95Å(120結晶面)の結晶子サイズを有するアルミナを得た。水中の5重量%のクエン酸(アルミナ含有量に基づく重量パーセンテージ)をベーマイトスラリに加えて酸改質スラリを形成した。酸改質スラリを105℃で1時間熟成させ、次いで噴霧乾燥し、生成物を集めた。
実施例1のとおりにベーマイトスラリを準備し、熱水的に熟成させ、95Å(120結晶面)の結晶子サイズを有するアルミナを得た。3重量%のマロン酸(アルミナ含有量に基づく重量パーセンテージ)をベーマイトスラリに加え、それを次いで105℃で1時間熟成させた。次いでスラリを5重量%のクエン酸の添加により改質し、30分間撹拌して生成物スラリを形成した。次いで生成物スラリを噴霧乾燥し、生成物を集めた。
度に分散性であるが、しかしながら前記材料の粘度1.3Pa.Sは可能性のある多くの用途における使用のためには高すぎる。熱水的熟成の前のクエン酸とのマロン酸のスラリへの共添加(実施例1)は、わずかにより高い分散性(97.5%)と、はるかにより低い粘度(0.156Pa.S)とを有する材料を与える。これは十分に多くの用途で用いられるべき流体である。あるいはまた、実施例1と比較して負の影響なしで、アルミナスラリがクエン酸と一緒に熟成された後にマロン酸をそれに加えることができる(実施例2)。事実、製造される材料は分散性及び粘度に関してほとんど同じである。
Claims (15)
- i)ベーマイトを含むアルミナスラリを準備する段階と、
ii)前記アルミナスラリを熟成させて38~450Å(120面)の結晶子サイズを有するアルミナを含む熟成アルミナスラリを形成する段階と、
iii)前記熟成アルミナスラリにトリカルボン酸を加えて酸改質スラリを形成する段階と、
iv)前記酸改質スラリを75℃~125℃の温度で熟成させて生成物スラリを形成する段階 と、
v)前記生成物スラリを噴霧乾燥する段階とを含む
アルミナの製造方法であって、
段階iii)においてトリカルボン酸と一緒にジカルボン酸を加えること又は段階v)における噴霧乾燥の前の段階iv)の後に前記生成物スラリにジカルボン酸を加えることを特徴とする、方法。 - 前記アルミナスラリが、オキシ水酸化アルミニウム、酸化アルミニウム、水酸化アルミニウム又はそれらの混合物を含む、請求項1に記載の方法。
- 前記アルミナスラリが、バイヤーライト、ギブサイト、ガンマ-アルミナ 、遷移(デルタ-シータ)アルミナ及びそれらの混合物を含む、請求項2に記載の方法。
- 前記アルミナスラリが6~10のpHを有する、請求項1~3のいずれかに記載の方法。
- 95~220℃の温度に30分~8時間加熱することにより前記アルミナスラリを熟成させる、請求項1~4のいずれかに記載の方法。
- 熟成後、前記アルミナスラリが、40~180Å(120面)の結晶子サイズを有するアルミナを含む、請求項5に記載の方法。
- 前記トリカルボン酸が、クエン酸、イソクエン酸、アコニット酸、トリカルバリル酸、
トリメシン酸ならびにそれらの混合物及び/又は誘導体を含む、請求項1~6のいずれかに記載の方法。 - 前記トリカルボン酸が(単独で又はジカルボン酸と一緒に)加えられると、酸改質スラリのpHが1~6のpHとなる、請求項1~7のいずれかに記載の方法。
- 前記酸改質スラリを10分~1時間熟成させる、請求項1~8のいずれかに記載の方法。
- 前記酸改質スラリを85℃~115℃の温度で熟成させる、請求項9に記載の方法。
- 前記ジカルボン酸が、マロン酸、コハク酸、グルタル酸、アジピン酸、ピメリン酸、マレイン酸、フマル酸、グルタコン酸、ムコン酸、シトラコン酸、メサコン酸又はそれらの混合物を含む、請求項1~10のいずれかに記載の方法。
- 前記ジカルボン酸およびトリカルボン酸を予備混合することにより、前記ジカルボン酸を前記トリカルボン酸と同時に前記熟成アルミナスラリに加える、請求項10に記載の方法。
- 前記ジカルボン酸を前記トリカルボン酸と逐次的に前記熟成アルミナスラリに加える、請求項10に記載の方法。
- 前記ジカルボン酸を前記生成物スラリに加える、請求項10に記載の方法。
- ベーマイトを含むアルミナであって、10重量%ゾルが、8より高いpHにおいて、90%より高い分散性と、1Pa.S未満の粘度とを有する、高度に分散性があるアルミナ。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003501341A (ja) | 1999-06-10 | 2003-01-14 | コンデア・ビスタ・カンパニー | 水分散性アルファ−アルミナ一水化物の製造方法 |
JP2008501601A (ja) | 2004-04-26 | 2008-01-24 | サソル・ノース・アメリカ・インコーポレーテツド | 高pH分散性ナノアルミナ |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3207578A (en) * | 1964-06-11 | 1965-09-21 | Du Pont | Process for the preparation of waterdispersible fibrous alumina monohydrate |
US4676928A (en) | 1986-01-30 | 1987-06-30 | Vista Chemical Company | Process for producing water dispersible alumina |
US5837634A (en) * | 1992-11-12 | 1998-11-17 | Condea Vista Company | Process for producing stabilized alumina having enhanced resistance to loss of surface area at high temperatures |
JP3708985B2 (ja) * | 1995-03-24 | 2005-10-19 | 触媒化成工業株式会社 | アルカリ性アルミナゾルおよびその製造方法 |
JP3738401B2 (ja) * | 1995-05-26 | 2006-01-25 | 触媒化成工業株式会社 | アルカリ性アルミナ水和物ゾルおよびその製造方法 |
KR20000074574A (ko) * | 1999-05-21 | 2000-12-15 | 오근호 | 단당류와 이당류를 이용한 환경 친화성 고농도 유동성 알루미나 현탁액 유동화조제 조성물 제조 |
DE10332775A1 (de) * | 2003-07-17 | 2005-02-17 | Sasol Germany Gmbh | Verfahren zur Herstellung böhmitischer Tonerden mit hoher a-Umwandlungstemperatur |
US20070203042A1 (en) * | 2004-03-18 | 2007-08-30 | Toyo Ink. Mfg. Co., Ltd. | Composition for Dispersing of Particle, Composition Having Particle Dispersed Therein, Process for Producing the Same, and Sintered Compact of Anatase Titanium Oxide |
CN100345761C (zh) * | 2005-05-18 | 2007-10-31 | 中国石油化工股份有限公司 | 一种纳米氧化铝的制备方法 |
DE102005032427A1 (de) * | 2005-07-12 | 2007-01-18 | Degussa Ag | Aluminiumoxid-Dispersion |
TWI432381B (zh) * | 2005-12-12 | 2014-04-01 | Grace W R & Co | 氧化鋁粒子 |
CN100469699C (zh) * | 2005-12-27 | 2009-03-18 | 上海材料研究所 | 一种处理氧化铝粉体的方法 |
US8871820B2 (en) | 2007-05-22 | 2014-10-28 | W. R. Grace & Co.-Conn. | Alumina particles and methods of making the same |
US7595276B2 (en) * | 2007-07-30 | 2009-09-29 | Jgc Catalysts And Chemicals Ltd. | Catalytic composition for oxychlorination |
CA2815124C (en) * | 2010-11-19 | 2016-04-19 | Rentech, Inc. | Stable slurry bed fischer-tropsch catalyst with high surface area and activity |
CN102275962B (zh) * | 2011-06-01 | 2013-09-04 | 中南民族大学 | 一种纳米氧化铝的制备方法及应用 |
-
2017
- 2017-08-11 EP EP17755622.2A patent/EP3504159A1/en active Pending
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- 2017-08-11 CN CN201780051338.1A patent/CN109890759B/zh active Active
- 2017-08-11 CA CA3033150A patent/CA3033150A1/en active Pending
- 2017-08-11 US US16/322,772 patent/US11512004B2/en active Active
- 2017-08-11 KR KR1020197009047A patent/KR102404083B1/ko active IP Right Grant
-
2022
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003501341A (ja) | 1999-06-10 | 2003-01-14 | コンデア・ビスタ・カンパニー | 水分散性アルファ−アルミナ一水化物の製造方法 |
JP2008501601A (ja) | 2004-04-26 | 2008-01-24 | サソル・ノース・アメリカ・インコーポレーテツド | 高pH分散性ナノアルミナ |
Non-Patent Citations (2)
Title |
---|
"About Viscosity - Difference in viscosity seen with your own eyes",[online],THINKY U.S.A., INC.,2019年04月19日,[令和3年6月22日検索], インターネット, <URL:https://www.thinkymixer.com/en-us/library/topic/about-viscosity-difference-in-viscosity-seen-with-your-own-eyes/> |
SHIN, Y. J. et al.,Materials Research Bulletin,2006年10月12日,Vol.41,pp.1964-1971,<DOI:10.1016/j.materresbull.2006.01.032> |
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