JP7191174B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7191174B2 JP7191174B2 JP2021164880A JP2021164880A JP7191174B2 JP 7191174 B2 JP7191174 B2 JP 7191174B2 JP 2021164880 A JP2021164880 A JP 2021164880A JP 2021164880 A JP2021164880 A JP 2021164880A JP 7191174 B2 JP7191174 B2 JP 7191174B2
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- 239000004065 semiconductor Substances 0.000 title claims description 59
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 7
- 229910001942 caesium oxide Inorganic materials 0.000 claims description 5
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 5
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 5
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 3
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical group O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 111
- 238000010586 diagram Methods 0.000 description 27
- 239000012212 insulator Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 11
- 230000008859 change Effects 0.000 description 9
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 7
- 229910000449 hafnium oxide Inorganic materials 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000005283 ground state Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000005300 metallic glass Substances 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- Composite Materials (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
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Description
図5は、量子井戸による擬似的な金属電極形成の一例を示す概念図である。量子井戸構造の中には、量子井戸の寸法に依存する量子化されたサブバンド構造が形成される。また、量子井戸構造のフェルミエネルギーは、電子占有されたサブバンドの上端のエネルギーにより決定される。
図8は、本実施形態における半導体装置10の一例を示す図である。図8(a)は、本実施形態における半導体装置10の構造の一例を示す。また、図8(b)は、本実施形態における半導体装置10の電極11、中間膜12、および絶縁膜13における仕事関数の関係の一例を示す。本実施形態における半導体装置10は、例えば図8に示されるように、電極11、中間膜12、絶縁膜13、および半導体14を備える。本実施形態における半導体装置10は、MIS(Metal Insulator Semiconductor)構造である。
次に、中間膜12の膜厚とリーク電流について実験を行った。図15は、リーク電流の実験結果の一例を示す図である。図15に示された実験では、図8に示された半導体装置10において、半導体14に代えて、電極11が設けられたサンプルを用いた。また、実験では、電極11の材料としてTiNを用い、中間膜12の材料としてV2O5またはWO3を用い、絶縁膜13の材料としてZrO2を用いた。また、実験では、中間膜12が1~1.5nmの膜厚のV2O5で形成されたサンプル1と、中間膜12が1nm以下の膜厚のV2O5で形成されたサンプル2と、中間膜12が1~1.5nmの膜厚のWO3で形成されたサンプル3と、中間膜12が1nm以下の膜厚のWO3で形成されたサンプル4と、中間膜12が設けられていないサンプル5とを用いた。いずれのサンプルにおいても、絶縁膜13の膜厚は6nmである。
例えば、上記した実施形態における半導体装置10の構造が、CMOSトランジスタにおけるp型MOSトランジスタのゲートスタック構造に適用されてもよい。具体的には、p型の半導体により構成された半導体14を含む半導体装置10をゲートスタック構造として有するp型MOSトランジスタと、通常の金属電極、絶縁膜、およびn型半導体をゲート構造として有するn型MOSトランジスタとにより、CMOSトランジスタが構成されてもよい。
11 電極
12 中間膜
13 絶縁膜
14 半導体
Claims (3)
- 金属からなる第1の電極と、
金属からなる第2の電極と、
前記第1の電極と前記第2の電極との間に設けられ、絶縁性の遷移金属酸化物からなる絶縁膜と、
前記第1の電極と前記絶縁膜との間に設けられ、五酸化バナジウム(V2O5)または酸化モリブデン(MoO3)の少なくともいずれかを含む中間膜と
を備え、
前記中間膜の伝導帯の下端で決まる電子親和力は、前記第1の電極を構成する金属の電子親和力より大きいことを特徴とする半導体装置。 - 前記中間膜の厚さは1nm以下であることを特徴とする請求項1に記載の半導体装置。
- 前記絶縁膜を構成する遷移金属酸化物は、
酸化ハフニウム(HfO2)、ジルコニア(ZrO2)、酸化アルミニウム(Al2O3)、酸化イットリウム(Y2O3)、酸化セシウム(CeO2)、酸化ランタン(La2O3)、酸化ガドリウム(Gd2O3)、五酸化タンタル(Ta2O5)、五酸化ニオブ(Nb2O5)、または、これら複合酸化物、Silicate、もしくは積層膜であることを特徴とする請求項1に記載の半導体装置。
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US (1) | US20190123165A1 (ja) |
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TW (1) | TWI788437B (ja) |
Citations (4)
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JP2011135061A (ja) | 2009-11-27 | 2011-07-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
JP2015167227A (ja) | 2014-02-14 | 2015-09-24 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
WO2016071800A1 (ja) | 2014-11-07 | 2016-05-12 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
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KR100874399B1 (ko) * | 2002-07-18 | 2008-12-17 | 삼성전자주식회사 | 원자층 증착법을 이용한 물질 형성방법, 및 이를 이용한반도체 장치의 캐패시터 형성방법 |
US6831313B2 (en) | 2001-05-10 | 2004-12-14 | Symetrix Corporation | Ferroelectric composite material, method of making same and memory utilizing same |
JP4792716B2 (ja) * | 2004-07-06 | 2011-10-12 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JP4764030B2 (ja) * | 2005-03-03 | 2011-08-31 | 株式会社東芝 | 半導体装置及びその製造方法 |
US7241691B2 (en) * | 2005-03-28 | 2007-07-10 | Freescale Semiconductor, Inc. | Conducting metal oxide with additive as p-MOS device electrode |
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JP2009239047A (ja) | 2008-03-27 | 2009-10-15 | Nec Corp | 窒化ジルコニウム界面層を有するキャパシター構造 |
JP2011135061A (ja) | 2009-11-27 | 2011-07-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
JP2015167227A (ja) | 2014-02-14 | 2015-09-24 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
WO2016071800A1 (ja) | 2014-11-07 | 2016-05-12 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
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US20190123165A1 (en) | 2019-04-25 |
TW201931605A (zh) | 2019-08-01 |
TWI788437B (zh) | 2023-01-01 |
JP2022000929A (ja) | 2022-01-04 |
JP2019079907A (ja) | 2019-05-23 |
JP6957310B2 (ja) | 2021-11-02 |
KR102169425B1 (ko) | 2020-10-23 |
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