JP7177260B2 - 水素障壁材料を有する垂直トランジスタを含むデバイス及び関連する方法 - Google Patents
水素障壁材料を有する垂直トランジスタを含むデバイス及び関連する方法 Download PDFInfo
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- JP7177260B2 JP7177260B2 JP2021519571A JP2021519571A JP7177260B2 JP 7177260 B2 JP7177260 B2 JP 7177260B2 JP 2021519571 A JP2021519571 A JP 2021519571A JP 2021519571 A JP2021519571 A JP 2021519571A JP 7177260 B2 JP7177260 B2 JP 7177260B2
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- Prior art keywords
- conductive material
- oxide
- electrically insulating
- zinc
- insulating material
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- 239000000463 material Substances 0.000 title claims description 86
- 238000000034 method Methods 0.000 title claims description 69
- 239000001257 hydrogen Substances 0.000 title claims description 56
- 229910052739 hydrogen Inorganic materials 0.000 title claims description 56
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims description 55
- 230000004888 barrier function Effects 0.000 title description 28
- 239000004020 conductor Substances 0.000 claims description 118
- 239000012777 electrically insulating material Substances 0.000 claims description 98
- 239000004065 semiconductor Substances 0.000 claims description 77
- 239000003989 dielectric material Substances 0.000 claims description 61
- 238000004519 manufacturing process Methods 0.000 claims description 22
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 10
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- -1 aluminum tin oxide indium zinc Chemical compound 0.000 claims description 8
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- ZFEADGRFDTTYIM-UHFFFAOYSA-N [Zn+2].[O-2].[In+3].[Si+4] Chemical compound [Zn+2].[O-2].[In+3].[Si+4] ZFEADGRFDTTYIM-UHFFFAOYSA-N 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- VGYZOYLDGKIWST-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) zirconium(4+) Chemical compound [O-2].[Zn+2].[Zr+4].[In+3] VGYZOYLDGKIWST-UHFFFAOYSA-N 0.000 claims description 3
- 230000002401 inhibitory effect Effects 0.000 claims description 2
- YSRUGFMGLKANGO-UHFFFAOYSA-N zinc hafnium(4+) indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[In+3].[Hf+4] YSRUGFMGLKANGO-UHFFFAOYSA-N 0.000 claims description 2
- 229910010037 TiAlN Inorganic materials 0.000 claims 3
- OOTHXJAGYKOWEU-UHFFFAOYSA-N [Sn]=O.[Zr].[Zn] Chemical compound [Sn]=O.[Zr].[Zn] OOTHXJAGYKOWEU-UHFFFAOYSA-N 0.000 claims 2
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 claims 2
- WGCXSIWGFOQDEG-UHFFFAOYSA-N [Zn].[Sn].[In] Chemical compound [Zn].[Sn].[In] WGCXSIWGFOQDEG-UHFFFAOYSA-N 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 description 38
- 230000005540 biological transmission Effects 0.000 description 12
- 239000007772 electrode material Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 229910003087 TiOx Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910007667 ZnOx Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910000457 iridium oxide Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- IOKZQYBPJYHIIW-UHFFFAOYSA-N aluminum zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Al+3].[Sn+4].[In+3].[O-2].[O-2].[O-2].[O-2].[O-2] IOKZQYBPJYHIIW-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
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Description
この出願は、“Semiconductor Devices Including Vertical Transistors Having Hydrogen Barrier Materials, and Related Methods”に対する2018年10月9日に出願の米国仮特許出願整理番号62/743,133に対して特許協力条約の8条の下での利益を主張する、日本を指定し、2020年4月16日に国際特許公開WO2020/076758A1として英語で公開された、2019年10月8日に出願の国際特許出願PCT/US2019/055105の国内段階の移行である。
開示の実施形態は、半導体デバイスの設計及び製造の分野に関する。より具体的には、本明細書に開示される実施形態は、それを通じて水素種の透過を抑制するように構成された材料を有する垂直トランジスタを含む半導体デバイス構造体に関し、関連する半導体デバイス、電子システム、及び方法に関する。
Claims (19)
- 少なくとも1つの導電性材料であって、前記少なくとも1つの導電性材料を通じての水素透過を抑制するように構成された前記少なくとも1つの導電性材料を個別に各々含む、ソース領域及びドレイン領域と、
前記ソース領域と前記ドレイン領域との垂直方向の間のチャネル領域と
を含む半導電性構造体と、
前記半導電性構造体の前記チャネル領域に横方向に隣接する少なくとも1つのゲート電極と、
前記半導電性構造体と前記少なくとも1つのゲート電極との横方向の間の誘電体材料と
を含む垂直トランジスタ
を含む、デバイス。 - 前記ソース領域及び前記ドレイン領域の内の少なくとも1つは不均質である、請求項1に記載のデバイス。
- 前記ソース領域及び前記ドレイン領域の内の1つ以上の前記少なくとも1つの導電性材料は、元素Ir、IrOx、及びTiAlNの内の1つ以上を含む、請求項1に記載のデバイス。
- 前記ソース領域及び前記ドレイン領域の内の1つ以上の前記少なくとも1つの導電性材料は、元素Ir及びIrOxを含む、請求項1に記載のデバイス。
- 前記ソース領域及び領域ドレイン領域の内の1つ以上の前記少なくとも1つの導電性材料はTiAlNを含む、請求項1に記載のデバイス。
- 前記ソース領域及び前記ドレイン領域は、20Åから550Åまでの範囲内の厚さを個別に各々有する、請求項1に記載のデバイス。
- 前記ソース領域及び前記ドレイン領域は、相互に異なる材料組成を有する、請求項1に記載のデバイス。
- 前記チャネル領域は、酸化亜鉛スズ、酸化インジウム亜鉛、酸化亜鉛、酸化インジウムガリウム亜鉛、酸化インジウムガリウムシリコン、酸化インジウム、酸化スズ、酸化チタン、酸窒化亜鉛、酸化マグネシウム亜鉛、酸化ジルコニウムインジウム亜鉛、酸化ハフニウムインジウム亜鉛、酸化スズインジウム亜鉛、酸化アルミニウムスズインジウム亜鉛、酸化シリコンインジウム亜鉛、酸化亜鉛スズ、酸化アルミニウム亜鉛スズ、酸化ガリウム亜鉛スズ、酸化ジルコニウム亜鉛スズ、及び酸化インジウムガリウムシリコンの内の1つ以上を含む、請求項1に記載のデバイス。
- 前記垂直トランジスタの少なくとも一部分の上方にある電気絶縁材料であって、前記電気絶縁材料を通じての水素透過を抑制するように構成された前記電気絶縁材料を更に含む、請求項1に記載のデバイス。
- 前記電気絶縁材料はAl 2 O 3 を含む、請求項9に記載のデバイス。
- 前記垂直トランジスタの前記ドレイン領域と電気通信するデジット線を更に含む、請求項1に記載のデバイス。
- 前記半導電性構造体は、前記ソース領域と、前記ドレイン領域と、前記チャネル領域とを含む半導電性ピラーを含む、請求項1に記載のデバイス。
- 前記半導電性構造体は、
前記ドレイン領域と、
前記ソース領域及び前記チャネル領域を含む半導電性ピラーであって、前記ドレイン領域よりも小さい横方向の寸法を有する前記半導電性ピラーと
を含む、請求項1に記載のデバイス。 - 前記ドレイン領域は、デジット線の上方に連続的に伸長する、請求項13に記載のデバイス。
- スタックを形成することであって、前記スタックは、
第1の導電性材料と、
前記第1の導電性材料の上方の第2の導電性材料であって、前記第2の導電性材料を通じての水素種の透過を抑制するように構成された前記第2の導電性材料と、
前記第2の導電性材料の上方の半導電性材料と、
前記半導電性材料の上方の第3の導電性材料であって、前記第3の導電性材料を通じての水素種の透過を抑制するように構成された前記第3の導電性材料と
を含むことと、
ピラー構造体を形成するように、少なくとも前記半導電性材料及び前記第3の導電性材料をパターニングすることと、
前記ピラー構造体に横方向に隣接するようにゲート誘電体材料及びゲート電極を形成することであって、前記ゲート誘電体材料は、前記ゲート電極と前記ピラー構造体との間に介在すること
を含む、デバイスを製造する方法。 - 前記ピラー構造体を形成するように、少なくとも前記半導電性材料及び前記第3の導電性材料をパターニングすることは、前記ピラー構造体を形成するように、前記第2の導電性材料、前記半導電性材料、及び前記第3の導電性材料をパターニングすることを含む、請求項15に記載の方法。
- スタックを形成することであって、前記スタックは、
第1の導電性材料と、
前記第1の導電性材料の上方の第2の導電性材料であって、前記第2の導電性材料を通じての水素種の透過を抑制するように構成された前記第2の導電性材料と、
前記第2の導電性材料の上方の半導電性材料と
を含むことと、
ピラー構造体を形成するように少なくとも前記半導電性材料をパターニングすることと、
前記ピラー構造体に横方向に隣接するようにゲート誘電体材料及びゲート電極を形成することであって、前記ゲート誘電体材料は、前記ゲート電極と前記ピラー構造体との間に介在することと、
前記ゲート誘電体材料、前記ゲート電極、及び前記ピラー構造体の上方に、電気絶縁材料であって、前記電気絶縁材料を通じての水素種の透過を抑制するように構成された前記電気絶縁材料を形成することと、
前記ピラー構造体の上面を露出するように、前記電気絶縁材料内に開口部を形成することと、
前記電気絶縁材料の前記開口部内に第3の導電性材料を形成することであって、前記第3の導電性材料は、前記第3の導電性材料を通じての水素種の透過を抑制するように構成されること
を含む、デバイスを製造する方法。 - 元素Ir、IrOx、及びTiAlNの内の1つ以上を含むように前記第2の導電性材料を選択すること更に含む、請求項15に記載の方法。
- 酸化亜鉛スズ、酸化インジウム亜鉛、酸化亜鉛、酸化インジウムガリウム亜鉛、酸化インジウムガリウムシリコン、酸化インジウム、酸化スズ、酸化チタン、酸窒化亜鉛、酸化マグネシウム亜鉛、酸化ジルコニウムインジウム亜鉛、酸化ハフニウムインジウム亜鉛、酸化スズインジウム亜鉛、酸化アルミニウムスズインジウム亜鉛、酸化シリコンインジウム亜鉛、酸化亜鉛スズ、酸化アルミニウム亜鉛スズ、酸化ガリウム亜鉛スズ、酸化ジルコニウム亜鉛スズ、及び酸化インジウムガリウムシリコンの内の1つ以上を含むように前記半導電性材料を選択することを更に含む、請求項15に記載の方法。
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US201862743133P | 2018-10-09 | 2018-10-09 | |
US62/743,133 | 2018-10-09 | ||
PCT/US2019/055105 WO2020076758A1 (en) | 2018-10-09 | 2019-10-08 | Devices including vertical transistors having hydrogen barrier materials, and related methods |
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US20070148939A1 (en) | 2005-12-22 | 2007-06-28 | International Business Machines Corporation | Low leakage heterojunction vertical transistors and high performance devices thereof |
JP2015111663A (ja) | 2013-11-01 | 2015-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US20160190343A1 (en) | 2014-12-30 | 2016-06-30 | National Chiao Tung University | A fet device having a vertical channel in a 2d material layer |
JP2016187032A (ja) | 2015-03-19 | 2016-10-27 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0442579A (ja) | 1990-06-08 | 1992-02-13 | Seiko Epson Corp | 薄膜トランジスタ及び製造方法 |
JP5646798B2 (ja) | 1999-11-11 | 2014-12-24 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体集積回路装置の製造方法 |
US6559007B1 (en) | 2000-04-06 | 2003-05-06 | Micron Technology, Inc. | Method for forming flash memory device having a tunnel dielectric comprising nitrided oxide |
KR100451569B1 (ko) | 2002-05-18 | 2004-10-08 | 주식회사 하이닉스반도체 | 수소배리어막을 구비한 반도체 장치의 제조 방법 |
JP4952148B2 (ja) | 2006-08-29 | 2012-06-13 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US7859050B2 (en) | 2007-01-22 | 2010-12-28 | Micron Technology, Inc. | Memory having a vertical access device |
JP5092461B2 (ja) | 2007-03-09 | 2012-12-05 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP5502302B2 (ja) | 2008-09-26 | 2014-05-28 | ローム株式会社 | 半導体装置およびその製造方法 |
KR101824124B1 (ko) * | 2009-11-28 | 2018-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
KR20110139394A (ko) | 2010-06-23 | 2011-12-29 | 주성엔지니어링(주) | 박막 트랜지스터 및 그 제조 방법 |
US8907396B2 (en) | 2012-01-04 | 2014-12-09 | Micron Technology, Inc | Source/drain zones with a delectric plug over an isolation region between active regions and methods |
JP6100071B2 (ja) | 2012-04-30 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8940592B2 (en) | 2013-01-11 | 2015-01-27 | Micron Technology, Inc. | Memories and methods of forming thin-film transistors using hydrogen plasma doping |
US8878271B2 (en) | 2013-03-01 | 2014-11-04 | Micron Technology, Inc. | Vertical access device and apparatuses having a body connection line, and related method of operating the same |
KR20150101726A (ko) * | 2014-02-27 | 2015-09-04 | 에스케이하이닉스 주식회사 | 터널링 트랜지스터, 그를 포함하는 저항 변화 메모리 장치 및 그 제조방법 |
DE112015001878B4 (de) * | 2014-04-18 | 2021-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und elektronisches Gerät |
US9881954B2 (en) * | 2014-06-11 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
JP6736321B2 (ja) * | 2015-03-27 | 2020-08-05 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
EP3153463B1 (en) * | 2015-10-08 | 2018-06-13 | IMEC vzw | Method for producing a pillar structure in a semiconductor layer |
JP6538598B2 (ja) | 2016-03-16 | 2019-07-03 | 株式会社東芝 | トランジスタ及び半導体記憶装置 |
KR102476806B1 (ko) | 2016-04-01 | 2022-12-13 | 에스케이하이닉스 주식회사 | 강유전체막을 포함하는 반도체 메모리 장치 |
US9806191B1 (en) * | 2016-10-11 | 2017-10-31 | United Microelectronics Corp. | Vertical channel oxide semiconductor field effect transistor and method for fabricating the same |
KR102558973B1 (ko) * | 2017-01-18 | 2023-07-24 | 삼성디스플레이 주식회사 | 트랜지스터 표시판 |
CN107359168A (zh) | 2017-07-11 | 2017-11-17 | 京东方科技集团股份有限公司 | 显示面板及其制备方法、显示装置 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070148939A1 (en) | 2005-12-22 | 2007-06-28 | International Business Machines Corporation | Low leakage heterojunction vertical transistors and high performance devices thereof |
JP2015111663A (ja) | 2013-11-01 | 2015-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US20160190343A1 (en) | 2014-12-30 | 2016-06-30 | National Chiao Tung University | A fet device having a vertical channel in a 2d material layer |
JP2016187032A (ja) | 2015-03-19 | 2016-10-27 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
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KR20210053353A (ko) | 2021-05-11 |
TW202023056A (zh) | 2020-06-16 |
CN113169225A (zh) | 2021-07-23 |
TWI716146B (zh) | 2021-01-11 |
WO2020076758A1 (en) | 2020-04-16 |
US20200111919A1 (en) | 2020-04-09 |
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