JP7165322B2 - ショットキーバリアダイオード - Google Patents
ショットキーバリアダイオード Download PDFInfo
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- JP7165322B2 JP7165322B2 JP2018067392A JP2018067392A JP7165322B2 JP 7165322 B2 JP7165322 B2 JP 7165322B2 JP 2018067392 A JP2018067392 A JP 2018067392A JP 2018067392 A JP2018067392 A JP 2018067392A JP 7165322 B2 JP7165322 B2 JP 7165322B2
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- trench
- drift layer
- schottky barrier
- barrier diode
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- 230000004888 barrier function Effects 0.000 title claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 44
- 230000002093 peripheral effect Effects 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 20
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 13
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 12
- 230000005684 electric field Effects 0.000 description 49
- 238000004088 simulation Methods 0.000 description 39
- 238000010586 diagram Methods 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- OCKGFTQIICXDQW-ZEQRLZLVSA-N 5-[(1r)-1-hydroxy-2-[4-[(2r)-2-hydroxy-2-(4-methyl-1-oxo-3h-2-benzofuran-5-yl)ethyl]piperazin-1-yl]ethyl]-4-methyl-3h-2-benzofuran-1-one Chemical compound C1=C2C(=O)OCC2=C(C)C([C@@H](O)CN2CCN(CC2)C[C@H](O)C2=CC=C3C(=O)OCC3=C2C)=C1 OCKGFTQIICXDQW-ZEQRLZLVSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図1は、本発明の第1の実施形態によるショットキーバリアダイオード100の構成を示す模式的な上面図である。また、図2は、図1のA-A線に沿った模式的な断面図である。
図3は、本発明の第2の実施形態によるショットキーバリアダイオード200の構成を示す模式的な断面図である。
W1≧W2
であることが好ましく、
W1>W2
であることがより好ましい。これは、オン抵抗を低減するためにはメサ領域M1のメサ幅W1をある程度確保する必要があるのに対し、メサ領域M2については、メサ幅W2が狭いほど電界を分散させる効果が高まるからである。但し、メサ領域M2のメサ幅W2の下限は、加工精度によって制限される。
W3≦W4
であることが好ましく、
W3<W4
であることがより好ましい。これは、オン抵抗を低減するためには中心トレンチ60の幅W3をある程度狭くする必要があるのに対し、外周トレンチ10については、幅W4が大きいほど電界を分散させる効果が高まるからである。
図7は、本発明の第3の実施形態によるショットキーバリアダイオード300の構成を示す模式的な断面図である。
11 半導体材料
20 半導体基板
21 半導体基板の上面
22 半導体基板の裏面
30 ドリフト層
31 ドリフト層の上面
40 アノード電極
50 カソード電極
60 中心トレンチ
60a 端部に位置する中心トレンチ
61 絶縁膜
70 絶縁層
71 開口部
100,200,300 ショットキーバリアダイオード
M1,M2 メサ領域
Claims (6)
- 酸化ガリウムからなる半導体基板と、
前記半導体基板上に設けられた酸化ガリウムからなるドリフト層と、
前記ドリフト層とショットキー接触するアノード電極と、
前記半導体基板とオーミック接触するカソード電極と、
前記ドリフト層上に設けられ、前記ドリフト層の一部を露出させる開口部を有する絶縁層と、を備え、
前記ドリフト層は、平面視で前記アノード電極と重なる位置に設けられた複数の中心トレンチと、平面視で前記アノード電極を囲む外周トレンチを有し、
前記アノード電極は、前記開口部を介して前記ドリフト層とショットキー接触するとともに、一部が前記外周トレンチと重なるよう、前記開口部の周縁に位置する前記絶縁層上に形成されており、
前記複数の中心トレンチの内壁は絶縁膜で覆われており、
前記外周トレンチは、前記ドリフト層とは逆導電型の半導体材料によって埋め込まれており、
前記半導体材料は、フローティング状態であり、
前記外周トレンチの幅は、前記中心トレンチの幅よりも広いことを特徴とするショットキーバリアダイオード。 - 前記外周トレンチと前記外周トレンチに最も近い前記中心トレンチとの間のメサ幅は、前記複数の中心トレンチ間のメサ幅よりも小さいことを特徴とする請求項1に記載のショットキーバリアダイオード。
- 前記逆導電型の半導体材料は、酸化物半導体であることを特徴とする請求項1又は2に記載のショットキーバリアダイオード。
- 前記外周トレンチの深さと前記中心トレンチの深さが同じであることを特徴とする請求項1又は2に記載のショットキーバリアダイオード。
- 前記外周トレンチの深さが前記中心トレンチの深さよりも浅いことを特徴とする請求項1又は2に記載のショットキーバリアダイオード。
- 前記外周トレンチの深さが前記中心トレンチの深さよりも深いことを特徴とする請求項1又は2に記載のショットキーバリアダイオード。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018067392A JP7165322B2 (ja) | 2018-03-30 | 2018-03-30 | ショットキーバリアダイオード |
EP19775799.0A EP3780119A4 (en) | 2018-03-30 | 2019-03-11 | SCHOTTKY BARRIER DIODE |
CN201980024311.2A CN112005384B (zh) | 2018-03-30 | 2019-03-11 | 肖特基势垒二极管 |
US17/041,127 US11469334B2 (en) | 2018-03-30 | 2019-03-11 | Schottky barrier diode |
PCT/JP2019/009676 WO2019188188A1 (ja) | 2018-03-30 | 2019-03-11 | ショットキーバリアダイオード |
TW108110997A TWI798402B (zh) | 2018-03-30 | 2019-03-28 | 肖特基能障二極體 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2018067392A JP7165322B2 (ja) | 2018-03-30 | 2018-03-30 | ショットキーバリアダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019179815A JP2019179815A (ja) | 2019-10-17 |
JP7165322B2 true JP7165322B2 (ja) | 2022-11-04 |
Family
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JP2018067392A Active JP7165322B2 (ja) | 2018-03-30 | 2018-03-30 | ショットキーバリアダイオード |
Country Status (6)
Country | Link |
---|---|
US (1) | US11469334B2 (ja) |
EP (1) | EP3780119A4 (ja) |
JP (1) | JP7165322B2 (ja) |
CN (1) | CN112005384B (ja) |
TW (1) | TWI798402B (ja) |
WO (1) | WO2019188188A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6966740B2 (ja) * | 2018-10-23 | 2021-11-17 | Tdk株式会社 | ショットキーバリアダイオード |
JP6966739B2 (ja) * | 2018-10-23 | 2021-11-17 | Tdk株式会社 | ショットキーバリアダイオード |
JP7353957B2 (ja) * | 2019-12-13 | 2023-10-02 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP7371484B2 (ja) * | 2019-12-18 | 2023-10-31 | Tdk株式会社 | ショットキーバリアダイオード |
JPWO2021176833A1 (ja) * | 2020-03-03 | 2021-09-10 | ||
TW202207600A (zh) * | 2020-07-10 | 2022-02-16 | 日商Flosfia股份有限公司 | 電力轉換電路及電力轉換系統 |
JP2022129918A (ja) * | 2021-02-25 | 2022-09-06 | Tdk株式会社 | ショットキーバリアダイオード |
JP2023079551A (ja) * | 2021-11-29 | 2023-06-08 | Tdk株式会社 | ショットキーバリアダイオード |
WO2024029001A1 (ja) * | 2022-08-03 | 2024-02-08 | 三菱電機株式会社 | 半導体装置、および、半導体装置の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015060441A1 (ja) | 2013-10-24 | 2015-04-30 | ローム株式会社 | 半導体装置および半導体パッケージ |
US20150333133A1 (en) | 2014-05-14 | 2015-11-19 | Nxp B.V. | Semiconductive device and associated method of manufacture |
WO2016075927A1 (ja) | 2014-11-11 | 2016-05-19 | 出光興産株式会社 | 新規な積層体 |
JP2017199869A (ja) | 2016-04-28 | 2017-11-02 | 株式会社タムラ製作所 | トレンチmos型ショットキーダイオード |
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JP3914785B2 (ja) * | 2002-02-20 | 2007-05-16 | 新電元工業株式会社 | ダイオード素子 |
JP2005191227A (ja) * | 2003-12-25 | 2005-07-14 | Sanyo Electric Co Ltd | 半導体装置 |
US8372738B2 (en) * | 2009-10-30 | 2013-02-12 | Alpha & Omega Semiconductor, Inc. | Method for manufacturing a gallium nitride based semiconductor device with improved termination scheme |
TWI497602B (zh) * | 2011-02-15 | 2015-08-21 | Tzu Hsiung Chen | 溝渠式蕭基二極體及其製作方法 |
US20120217541A1 (en) * | 2011-02-24 | 2012-08-30 | Force Mos Technology Co., Ltd. | Igbt with integrated mosfet and fast switching diode |
CN110684960A (zh) * | 2014-07-22 | 2020-01-14 | 株式会社Flosfia | 结晶性半导体膜和板状体以及半导体装置 |
JP2017045969A (ja) | 2015-08-28 | 2017-03-02 | 株式会社タムラ製作所 | ショットキーバリアダイオード |
JP6545047B2 (ja) * | 2015-09-02 | 2019-07-17 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN106887470B (zh) | 2017-01-23 | 2019-07-16 | 西安电子科技大学 | Ga2O3肖特基二极管器件结构及其制作方法 |
US10971634B2 (en) * | 2017-06-29 | 2021-04-06 | Mitsubishi Electric Corporation | Oxide semiconductor device and method of manufacturing oxide semiconductor device |
JP6484304B2 (ja) * | 2017-08-09 | 2019-03-13 | ローム株式会社 | ショットキバリアダイオード |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015060441A1 (ja) | 2013-10-24 | 2015-04-30 | ローム株式会社 | 半導体装置および半導体パッケージ |
US20150333133A1 (en) | 2014-05-14 | 2015-11-19 | Nxp B.V. | Semiconductive device and associated method of manufacture |
WO2016075927A1 (ja) | 2014-11-11 | 2016-05-19 | 出光興産株式会社 | 新規な積層体 |
JP2017199869A (ja) | 2016-04-28 | 2017-11-02 | 株式会社タムラ製作所 | トレンチmos型ショットキーダイオード |
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CN112005384B (zh) | 2024-02-23 |
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TW201942976A (zh) | 2019-11-01 |
US20210119062A1 (en) | 2021-04-22 |
EP3780119A4 (en) | 2021-12-22 |
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