JP7121797B2 - 高密度マルチコンポーネント及びシリアルパッケージ - Google Patents
高密度マルチコンポーネント及びシリアルパッケージ Download PDFInfo
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- JP7121797B2 JP7121797B2 JP2020513548A JP2020513548A JP7121797B2 JP 7121797 B2 JP7121797 B2 JP 7121797B2 JP 2020513548 A JP2020513548 A JP 2020513548A JP 2020513548 A JP2020513548 A JP 2020513548A JP 7121797 B2 JP7121797 B2 JP 7121797B2
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- H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
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- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
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- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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Description
本願は2017年9月8日に出願された係属中の米国特許出願第15/699,654号に基づき優先権を主張する2017年11月6日に出願された係属中の米国特許出願第15/804,515号に基づき優先権を主張する一部継続出願であり、それら両方の出願は引用することにより本明細書中に援用される。本願はさらに2017年12月22日に出願された係属中の米国特許出願第15/852,799号に基づき優先権を主張する一部継続出願であり、その出願も引用することにより本明細書中に援用される。
各電子部品が第1外部終端と第2外部終端とを含む少なくとも2つの電子部品を提供すること;
少なくとも1つのインターポーザが隣接する電子部品間にあり、該インターポーザはアクティブインターポーザとメカニカルインターポーザから選択される電子部品のスタックを形成すること;及び
インターコネクトにより第1外部終端をインターポーザの第1トレースに接続し、第2外部終端をインターポーザの第2トレースに接続して隣接する電子部品を直列接続すること;を含む。
各電子部品が第1外部終端と第2外部終端とを含む少なくとも2つの電子部品を提供すること;
少なくとも1つのインターポーザが隣接する電子部品間にあり、該インターポーザはアクティブインターポーザとメカニカルインターポーザから選択される電子部品のスタックを形成すること;
インターコネクトにより第1外部終端をインターポーザの第1トレースに接続し、第2外部終端をインターポーザの第2トレースに接続して隣接する電子部品を直列接続すること;
少なくとも1つのトレースがアクティブトレースであり、少なくとも1つのトレースがメカニカルパッドであるトレースを含む回路基板を提供すること;
インターコネクトにより第1電子部品の少なくとも1つの第1外部終端を1つのアクティブトレースに接続すること;及び
インターコネクトにより第2電子部品の少なくとも1つの第2外部終端をメカニカルパッドに接続すること;を含む。
各電子部品が第1外部終端と第2外部終端とを含む少なくとも2つの電子部品を提供すること;
隣接する電子部品のスタックを形成すること;
隣接する第1外部終端をその間にある第1接着剤で接続すること;及び
隣接する電子部品をその間にある第2接着剤で接続すること;を含み、
前記第1接着剤と第2接着剤が高温導電性接着剤と高温絶縁性接着剤とからなる群から独立して選択され;
隣接する電子部品が直列接続される。
各電子部品が第1外部終端と第2外部終端とを含む少なくとも2つの電子部品を提供すること;
電子部品のスタックを形成すること;
隣接する電子部品の隣接する第1外部終端の間に少なくとも1つの電気的接続を形成すること;及び
隣接する電子部品の間に少なくとも1つの機械的接続を形成すること;を含み、
前記隣接する電子部品は直列接続される。
Claims (120)
- 各電子部品が第1外部終端と第2外部終端とを含む少なくとも2つの電子部品と;
隣接する電子部品の間の少なくとも1つのインターポーザであって、前記隣接する電子部品はインターコネクトにより前記少なくとも1つのインターポーザの前記インターポーザに接続されたインターポーザと;を備え、
前記各隣接する電子部品が直列に接続され、
前記少なくとも1つのインターポーザの前記インターポーザはアクティブインターポーザ及びメカニカルインターポーザから独立して選択され、
アクティブインターポーザはアクティブパッドとメカニカルパッドと基板とを含み、各アクティブパッドは、前記基板の反対側の対応するアクティブパッドに電気的に接続され、各メカニカルパッドは、前記基板の前記反対側の対応するメカニカルパッドに電気的に接続されず、
前記各隣接する電子部品の少なくとも1つのために、前記第1外部終端は、前記基板上で互いに対向する前記2つの前記アクティブパッドの一方によって電気的に接続され、前記第2外部終端は、2つの前記メカニカルパッドの一方にそれぞれ接触しかつ接着され、前記2つのメカニカルパッドの他方に電気的に接続されず、前記2つのメカニカルパッドは前記基板上で互いに対向し、
メカニカルインターポーザは、基板とメカニカルパッドとを含み、アクティブパッドを含まず、
前記メカニカルインターポーザに接続された前記隣接する電子部品は、一方の電子部品の前記第1外部終端および前記第2外部終端の一方に接続された第1パッドと、他方の電子部品の前記第1外部終端および前記第2外部終端の一方に接続された第2パッドと、前記第1パッドおよび前記第2パッドを電気的に接続するトレースと、によって電気的に接続される、高密度マルチコンポーネントパッケージ。 - 前記少なくとも1つのインターポーザはアクティブインターポーザを含む、請求項1に記載の高密度マルチコンポーネントパッケージ。
- 前記少なくとも1つのインターポーザはメカニカルインターポーザを含む、請求項1に記載の高密度マルチコンポーネントパッケージ。
- 前記各電子部品は、コンデンサ、抵抗器、バリスタ、インダクタ、ダイオード、ヒューズ、過電圧放電装置、センサ、スイッチ、静電気放電サプレッサ、半導体、及び集積回路からなる群から独立して選択される、請求項1に記載の高密度マルチコンポーネントパッケージ。
- 前記電子部品の少なくとも1つがMLCCである、請求項4に記載の高密度マルチコンポーネントパッケージ。
- 前記各電子部品は、MLCC、抵抗器、バリスタ、インダクタ、ダイオード、ヒューズ、過電圧放電装置、センサ、スイッチ、及び静電気放電サプレッサからなる群から選択される、請求項4に記載の高密度マルチコンポーネントパッケージ。
- 前記電子部品の少なくとも1つが発光ダイオードである、請求項6に記載の高密度マルチコンポーネントパッケージ。
- 前記電子部品の少なくとも1つがMLCCである、請求項6に記載の高密度マルチコンポーネントパッケージ。
- 全ての電子部品が直列接続される、請求項1に記載の高密度マルチコンポーネントパッケージ。
- 少なくとも2つの追加の電子部品をさらに含み、前記少なくとも2つの追加の電子部品が電気的に並列接続される、請求項1に記載の高密度マルチコンポーネントパッケージ。
- アクティブインターポーザ及びメカニカルインターポーザから独立して選択される前記少なくとも1つのインターポーザの複数のインターポーザを含む、請求項1に記載の高密度マルチコンポーネントパッケージ。
- 前記複数のインターポーザの各インターポーザがアクティブインターポーザである、請求項11に記載の高密度マルチコンポーネントパッケージ。
- 前記複数のインターポーザの各インターポーザがメカニカルインターポーザである、請求項11に記載の高密度マルチコンポーネントパッケージ。
- 前記複数のインターポーザは、少なくとも1つのアクティブインターポーザ及び少なくとも1つのメカニカルインターポーザを含む、請求項11に記載の高密度マルチコンポーネントパッケージ。
- 前記電子部品のうち少なくとも1つの部品が隣接する部品に前記インターコネクトにより直接接続される、請求項1に記載の高密度マルチコンポーネントパッケージ。
- 前記電子部品は少なくとも1つのスタックを形成する、請求項1に記載の高密度マルチコンポーネントパッケージ。
- 二次的電気部品をさらに含む、請求項16に記載の高密度マルチコンポーネントパッケージ。
- 少なくとも2つのスタックを含み、前記二次的電気部品は前記スタックをつなぐ、請求項17に記載の高密度マルチコンポーネントパッケージ。
- 前記二次的電気部品は少なくとも2つの前記電子部品に電気的に並列である、請求項17に記載の高密度マルチコンポーネントパッケージ。
- 前記少なくとも1つのインターコネクトは、ハンダ、導電性接着剤、ポリマーハンダ、及び遷移的液相焼結接着剤からなる群から選択される、請求項1に記載の高密度マルチコンポーネントパッケージ。
- 前記少なくとも1つのインターコネクトは、高融点金属と低融点金属を含む遷移的液相焼結接着剤である、請求項20に記載の高密度マルチコンポーネントパッケージ。
- 前記低融点金属は、インジウム、錫、鉛、アンチモン、ビスマス、カドミウム、亜鉛、ガリウム、テルリウム、水銀、タリウム、セレニウム、又はポロニウムからなる群から選択される、請求項21に記載の高密度マルチコンポーネントパッケージ。
- 前記高融点金属は、銀、銅、アルミニウム、金、プラチナ、パラジウム、ベリリウム、ロジウム、ニッケル、コバルト、鉄、及びモリブデンからなる群から選択される、請求項21に記載の高密度マルチコンポーネントパッケージ。
- 前記遷移的液相焼結接着剤は、錫及び銅、又はインジウム及び銀を含む、請求項21に記載の高密度マルチコンポーネントパッケージ。
- 少なくとも1つの前記外部終端は、銀、錫、金、銅、プラチナ、パラジウム、及びニッケルからなる群から選択される、請求項1に記載の高密度マルチコンポーネントパッケージ。
- Pi型フィルタ、T型フィルタ、及びLCフィルタからなる群から選択される、請求項1に記載の高密度マルチコンポーネントパッケージ。
- 高密度マルチコンポーネントパッケージを備えた電子回路であって、前記高密度マルチコンポーネントパッケージは、
各電子部品が第1外部終端と第2外部終端とを含む少なくとも2つの電子部品と;
隣接する電子部品の間のインターポーザと;
トレースのうち少なくとも1つのトレースがアクティブトレースであり、トレースのうち少なくとも1つのトレースがメカニカルトレースであるトレースを含む回路基板と;を含み、
前記インターポーザはアクティブインターポーザ及びメカニカルインターポーザから選択され、
アクティブインターポーザはアクティブパッドとメカニカルパッドと基板とを含み、各アクティブパッドは、前記基板の反対側の対応するアクティブパッドに電気的に接続され、各メカニカルパッドは、前記基板の前記反対側の対応するメカニカルパッドに電気的に接続されず、
前記各隣接する電子部品のために、前記第1外部終端は、前記基板上で互いに対向する前記2つの前記アクティブパッドによって電気的に接続され、前記第2外部終端は、2つの前記メカニカルパッドの一方にそれぞれ接触しかつ接着され、前記2つのメカニカルパッドの他方に電気的に接続されず、前記2つのメカニカルパッドは前記基板上で互いに対向し、
メカニカルインターポーザは、基板とメカニカルパッドとを含み、アクティブパッドを含まず、
前記隣接する電子部品が直列に接続され、
前記電子部品のうち第1電子部品の少なくとも1つの第1外部終端は少なくとも1つの前記アクティブトレースと電気的に接触し;
前記電子部品のうち第2電子部品の少なくとも1つの第2外部終端は少なくとも1つのメカニカルトレースと電気的に接触し、
前記メカニカルインターポーザに接続された前記隣接する電子部品は、一方の電子部品の前記第1外部終端および前記第2外部終端の一方に接続された第1パッドと、他方の電子部品の前記第1外部終端および前記第2外部終端の一方に接続された第2パッドと、前記第1パッドおよび前記第2パッドを電気的に接続するトレースと、によって電気的に接続される、電子回路。 - 前記高密度マルチコンポーネントパッケージは前記回路基板の上に垂直に実装される、請求項27に記載の電子回路。
- 少なくとも1つの前記外部終端及び少なくとも1つの前記アクティブトレース間にコネクタをさらに含む、請求項28に記載の電子回路。
- 前記コネクタは電気的接続部及び機能的接続部からなる群から選択される、請求項29に記載の電子回路。
- 前記コネクタは追加の電子部品である、請求項30に記載の電子回路。
- 前記追加の電子部品は、コンデンサ、抵抗器、バリスタ、インダクタ、ダイオード、ヒューズ、過電圧放電装置、センサ、スイッチ、静電気放電サプレッサ、半導体、及び集積回路からなる群から独立して選択される、請求項31に記載の電子回路。
- 前記追加の電子部品はMLCCである、請求項32に記載の電子回路。
- 前記追加の電子部品は、抵抗器、及びヒューズからなる群から選択される、請求項32に記載の電子回路。
- 前記高密度マルチコンポーネントパッケージは前記回路基板の上に水平に実装される、請求項27に記載の電子回路。
- 少なくとも1つの前記アクティブトレースは隣接する外部終端を電気的に接続する、請求項35に記載の電子回路。
- 前記インターポーザはアクティブインターポーザである、請求項27に記載の電子回路。
- 前記インターポーザはメカニカルインターポーザである、請求項27に記載の電子回路。
- 前記各電子部品は、MLCC、抵抗器、バリスタ、インダクタ、ダイオード、ヒューズ、過電圧放電装置、センサ、スイッチ、静電気放電サプレッサ、半導体、及び集積回路からなる群から独立して選択される、請求項27に記載の電子回路。
- 前記電子部品の少なくとも1つは、MLCC、抵抗器、バリスタ、インダクタ、ダイオード、ヒューズ、過電圧放電装置、センサ、スイッチ、及び静電気放電サプレッサからなる群から独立して選択される、請求項39に記載の電子回路。
- 前記電子部品の少なくとも1つがMLCCである、請求項39に記載の電子回路。
- 前記電子部品の少なくとも1つが発光ダイオードである、請求項39に記載の電子回路。
- 全ての電子部品が直列接続される、請求項27に記載の電子回路。
- 電気的に並列接続される少なくとも2つの追加の電子部品をさらに含む、請求項27に記載の電子回路。
- アクティブインターポーザ及びメカニカルインターポーザから選択される前記インターポーザの複数のインターポーザをさらに含む、請求項27に記載の電子回路。
- 前記複数のインターポーザの少なくとも1つのインターポーザがアクティブインターポーザである、請求項45に記載の電子回路。
- 前記複数のインターポーザの各インターポーザがメカニカルインターポーザである、請求項45に記載の電子回路。
- 前記複数のインターポーザは、少なくとも1つのアクティブインターポーザ及び少なくとも1つのメカニカルインターポーザを含む、請求項45に記載の電子回路。
- 前記電子部品のうち少なくとも1つの電子部品が隣接する電子部品にインターコネクトにより直接接続される、請求項27に記載の電子回路。
- 前記電子部品は少なくとも1つのスタックを形成する、請求項27に記載の電子回路。
- 二次的電気部品をさらに含む、請求項50に記載の電子回路。
- 少なくとも2つのスタックを含み、前記二次的電気部品は前記スタックをつなぐ、請求項51に記載の電子回路。
- 前記二次的電気部品は少なくとも2つの前記電子部品に電気的に並列である、請求項51に記載の電子回路。
- 前記隣接する電子部品はインターコネクトにより前記インターポーザに接続され、前記インターコネクトは、ハンダ、導電性接着剤、ポリマーハンダ、及び遷移的液相焼結接着剤からなる群から選択される、請求項27に記載の電子回路。
- 前記インターコネクトは、高融点金属と低融点金属を含む遷移的液相焼結接着剤である、請求項54に記載の電子回路。
- 前記低融点金属は、インジウム、錫、鉛、アンチモン、ビスマス、カドミウム、亜鉛、ガリウム、テルリウム、水銀、タリウム、セレニウム、又はポロニウムからなる群から選択される、請求項55に記載の電子回路。
- 前記高融点金属は、銀、銅、アルミニウム、金、プラチナ、パラジウム、ベリリウム、ロジウム、ニッケル、コバルト、鉄、及びモリブデンからなる群から選択される、請求項55に記載の電子回路。
- 前記遷移的液相焼結接着剤は、錫及び銅、又はインジウム及び銀を含む、請求項55に記載の電子回路。
- 少なくとも1つの前記外部終端は、銀、錫、金、銅、プラチナ、パラジウム、及びニッケルからなる群から選択される、請求項27に記載の電子回路。
- Pi型フィルタ、T型フィルタ、及びLCフィルタからなる群から選択される、請求項27に記載の電子回路。
- 各電子部品が第1外部終端と第2外部終端を含む少なくとも2つの電子部品を供給すること;及び
隣接する電子部品の間の少なくとも1つのインターザとともに前記電子部品のスタックを形成すること;を含み、
前記少なくとも1つのインターポーザの各インターポーザはアクティブインターポーザ及びメカニカルインターポーザから独立して選択され、
アクティブインターポーザはアクティブパッドとメカニカルパッドと基板とを含み、各アクティブパッドは、前記基板の反対側の対応するアクティブパッドに電気的に接続され、各メカニカルパッドは、前記基板の前記反対側の対応するメカニカルパッドに電気的に接続されず、
前記各隣接する電子部品の少なくとも1つのために、前記第1外部終端は、前記基板上で互いに対向する前記2つの前記アクティブパッドの一方にインターコネクトによって電気的に接続され、前記第2外部終端は、2つの前記メカニカルパッドの一方に前記インターコネクトによってそれぞれ接触しかつ接着され、前記2つのメカニカルパッドの他方に電気的に接続されず、前記2つのメカニカルパッドは前記基板上で互いに対向し、
メカニカルインターポーザは、基板とメカニカルパッドとを含み、アクティブパッドを含まず、
前記隣接する電子部品が直列接続され、
前記メカニカルインターポーザに接続された前記隣接する電子部品は、一方の電子部品の前記第1外部終端および前記第2外部終端の一方に接続された第1パッドと、他方の電子部品の前記第1外部終端および前記第2外部終端の一方に接続された第2パッドと、前記第1パッドおよび前記第2パッドを電気的に接続するトレースと、によって電気的に接続される、高密度マルチコンポーネントパッケージを形成する方法。 - 前記少なくとも1つのインターポーザはアクティブインターポーザを含む、請求項61に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記少なくとも1つのインターポーザはメカニカルインターポーザを含む、請求項61に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記各電子部品は、コンデンサ、抵抗器、バリスタ、インダクタ、ダイオード、ヒューズ、過電圧放電装置、センサ、スイッチ、静電気放電サプレッサ、半導体、及び集積回路からなる群から独立して選択される、請求項61に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記電子部品の少なくとも1つがMLCCである、請求項64に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記各電子部品は、MLCC、抵抗器、バリスタ、インダクタ、ダイオード、ヒューズ、過電圧放電装置、センサ、スイッチ、及び静電気放電サプレッサからなる群から選択される、請求項64に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記電子部品の少なくとも1つが発光ダイオードである、請求項66に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記電子部品の少なくとも1つがMLCCである、請求項66に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 全ての電子部品が直列接続される、請求項61に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 少なくとも2つの追加の電子部品をさらに含み、前記少なくとも2つの追加の電子部品が電気的に並列接続される、請求項61に記載の高密度マルチコンポーネントパッケージを形成する方法。
- アクティブインターポーザ及びメカニカルインターポーザから独立して選択される前記少なくとも1つのインターポーザの複数のインターポーザを含む、請求項61に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記複数のインターポーザの各インターポーザはアクティブインターポーザである、請求項71に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記複数のインターポーザの各インターポーザはメカニカルインターポーザである、請求項71に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記複数のインターポーザは、少なくとも1つのアクティブインターポーザ及び少なくとも1つのメカニカルインターポーザを含む、請求項71に記載の高密度マルチコンポーネントパッケージ。
- 前記電子部品のうち少なくとも1つの電子部品が隣接する電子部品にインターコネクトにより直接接続される、請求項61に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記電子部品は少なくとも1つのスタックを形成する、請求項61に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 二次的電気部品をさらに含む、請求項76に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 少なくとも2つのスタックを含み、前記二次的電気部品は前記スタックをつなぐ、請求項77に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記二次的電気部品は少なくとも2つの前記電子部品に電気的に並列である、請求項77に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記インターコネクトは、ハンダ、導電性接着剤、ポリマーハンダ、及び遷移的液相焼結接着剤からなる群から選択される、請求項61に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記インターコネクトは、高融点金属と低融点金属を含む遷移的液相焼結接着剤である、請求項80に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記低融点金属は、インジウム、錫、鉛、アンチモン、ビスマス、カドミウム、亜鉛、ガリウム、テルリウム、水銀、タリウム、セレニウム、又はポロニウムからなる群から選択される、請求項81に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記高融点金属は、銀、銅、アルミニウム、金、プラチナ、パラジウム、ベリリウム、ロジウム、ニッケル、コバルト、鉄、及びモリブデンからなる群から選択される、請求項81に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記遷移的液相焼結接着剤は、錫及び銅、又はインジウム及び銀を含む、請求項81に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 少なくとも1つの前記第1外部終端は、銀、錫、金、銅、プラチナ、パラジウム、及びニッケルからなる群から選択される、請求項61に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 前記高密度マルチコンポーネントパッケージは、Pi型フィルタ、T型フィルタ、及びLCフィルタからなる群から選択される、請求項61に記載の高密度マルチコンポーネントパッケージを形成する方法。
- 高密度マルチコンポーネントパッケージを形成することを含む、電子回路を形成する方法であって、
前記高密度マルチコンポーネントパッケージを形成することは、
各電子部品が第1外部終端と第2外部終端とを含む少なくとも2つの電子部品を供給すること;及び
前記電子部品のうちの第1電子部品と前記電子部品のうちの第2電子部品との間にインターポーザとともに前記電子部品のスタックを形成すること;を含み、
前記インターポーザはアクティブインターポーザ及びメカニカルインターポーザから独立して選択され、
アクティブインターポーザはアクティブパッドとメカニカルパッドと基板とを含み、各アクティブパッドは、前記基板の反対側の対応するアクティブパッドに電気的に接続され、各メカニカルパッドは、前記基板の前記反対側の対応するメカニカルパッドに電気的に接続されず、
前記第1電子部品のために、前記第1外部終端は、前記基板上で互いに対向する前記2つの前記アクティブパッドの1つによってインターコネクトに電気的に接続され、前記第2外部終端は、前記インターコネクトによって2つの前記メカニカルパッドの一方にそれぞれ接触しかつ接着され、前記2つのメカニカルパッドの他方に電気的に接続されず、前記2つのメカニカルパッドは前記基板上で互いに対向し、
メカニカルインターポーザは、基板とメカニカルパッドとを含み、アクティブパッドを含まず、
前記第1及び第2電子部品が直列に接続され、
前記高密度マルチコンポーネントパッケージを形成することは、
トレースのうち少なくとも1つのトレースがアクティブトレースであり、トレースのうち少なくとも1つのトレースがメカニカルトレースであるトレースを含む回路基板を供給すること;
前記第1電子部品の少なくとも1つの前記第1外部終端を前記インターコネクトとともに前記アクティブトレースの1つと電気的に接触させること;及び
前記第2電子部品の少なくとも1つの前記第2外部終端を前記インターコネクトとともに前記メカニカルトレースの1つと電気的に接触させること;をさらに含み、
前記メカニカルインターポーザに接続された前記隣接する電子部品は、一方の電子部品の前記第1外部終端および前記第2外部終端の一方に接続された第1パッドと、他方の電子部品の前記第1外部終端および前記第2外部終端の一方に接続された第2パッドと、前記第1パッドおよび前記第2パッドを電気的に接続するトレースと、によって電気的に接続される、電子回路を形成する方法。 - 前記高密度マルチコンポーネントパッケージは前記回路基板の上に垂直に実装される、請求項87に記載の電子部品を形成する方法。
- 前記外部終端及び前記アクティブトレース間にコネクタをさらに含む、請求項88に記載の電子部品を形成する方法。
- 前記コネクタは電気的接続部及び機能的接続部からなる群から選択される、請求項89に記載の電子部品を形成する方法。
- 前記コネクタは追加の電子部品である、請求項90に記載の電子部品を形成する方法。
- 前記追加の電子部品は、コンデンサ、抵抗器、バリスタ、インダクタ、ダイオード、ヒューズ、過電圧放電装置、センサ、スイッチ、静電気放電サプレッサ、半導体、及び集積回路からなる群から独立して選択される、請求項91に記載の電子部品を形成する方法。
- 前記追加の電子部品はMLCCである、請求項92に記載の電子部品を形成する方法。
- 前記追加の電子部品は、抵抗器、及びヒューズからなる群から選択される、請求項92に記載の電子部品を形成する方法。
- 前記高密度マルチコンポーネントパッケージは前記回路基板の上に水平に実装される、請求項87に記載の電子部品を形成する方法。
- 隣接する外部終端を電気的に接続するトレースの少なくとも1つをさらに備える、請求項95に記載の電子部品を形成する方法。
- 前記インターポーザはアクティブインターポーザである、請求項87に記載の電子部品を形成する方法。
- 前記インターポーザはメカニカルインターポーザである、請求項87に記載の電子部品を形成する方法。
- 前記各電子部品は、コンデンサ、抵抗器、バリスタ、インダクタ、ダイオード、ヒューズ、過電圧放電装置、センサ、スイッチ、静電気放電サプレッサ、半導体、及び集積回路からなる群から独立して選択される、請求項87に記載の電子部品を形成する方法。
- 前記各電子部品は、MLCC、抵抗器、バリスタ、インダクタ、ダイオード、ヒューズ、過電圧放電装置、センサ、スイッチ、及び静電気放電サプレッサからなる群から選択される、請求項99に記載の電子部品を形成する方法。
- 前記電子部品の少なくとも1つが発光ダイオードである、請求項100に記載の電子部品を形成する方法。
- 前記電子部品の少なくとも1つがMLCCである、請求項100に記載の電子部品を形成する方法。
- 全ての電子部品が直列接続される、請求項87に記載の電子部品を形成する方法。
- 少なくとも2つの追加の電子部品をさらに含み、前記少なくとも2つの追加の電子部品が電気的に並列接続される、請求項87に記載の電子部品を形成する方法。
- アクティブインターポーザ及びメカニカルインターポーザから独立して選択される前記各インターポーザの複数のインターポーザを含む、請求項87に記載の電子部品を形成する方法。
- 前記複数のインターポーザの各インターポーザがアクティブインターポーザである、請求項105に記載の電子部品を形成する方法。
- 前記複数のインターポーザの各インターポーザがメカニカルインターポーザである、請求項105に記載の電子部品を形成する方法。
- 前記複数のインターポーザは、少なくとも1つのアクティブインターポーザ及び少なくとも1つのメカニカルインターポーザを含む、請求項105に記載の電子部品を形成する方法。
- 前記電子部品のうち少なくとも1つの電子部品が隣接する電子部品に前記インターコネクトにより直接接続される、請求項87に記載の電子部品を形成する方法。
- 前記電子部品は少なくとも1つのスタックを形成する、請求項87に記載の電子部品を形成する方法。
- 二次的電気部品をさらに含む、請求項110に記載の電子部品を形成する方法。
- 少なくとも2つのスタックを含み、前記二次的電気部品は前記スタックをつなぐ、請求項111に記載の電子部品を形成する方法。
- 前記二次的電気部品は少なくとも2つの前記電子部品に電気的に並列である、請求項111に記載の電子部品を形成する方法。
- 前記インターコネクトは、ハンダ、導電性接着剤、ポリマーハンダ、及び遷移的液相焼結接着剤からなる群から選択される、請求項87に記載の電子部品を形成する方法。
- 前記インターコネクトは、高融点金属と低融点金属を含む遷移的液相焼結接着剤である、請求項114に記載の電子部品を形成する方法。
- 前記低融点金属は、インジウム、錫、鉛、アンチモン、ビスマス、カドミウム、亜鉛、ガリウム、テルリウム、水銀、タリウム、セレニウム、又はポロニウムからなる群から選択される、請求項115に記載の電子部品を形成する方法。
- 前記高融点金属は、銀、銅、アルミニウム、金、プラチナ、パラジウム、ベリリウム、ロジウム、ニッケル、コバルト、鉄、及びモリブデンからなる群から選択される、請求項115に記載の電子部品を形成する方法。
- 前記遷移的液相焼結接着剤は、錫及び銅、又はインジウム及び銀を含む、請求項115に記載の電子部品を形成する方法。
- 前記高密度マルチコンポーネントパッケージは、Pi型フィルタ、T型フィルタ、及びLCフィルタからなる群から選択される、請求項87に記載の電子部品を形成する方法。
- 少なくとも1つの前記第1外部終端は、銀、錫、金、銅、プラチナ、パラジウム、及びニッケルからなる群から選択される、請求項87に記載の電子部品を形成する方法。
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US15/699,654 | 2017-09-08 | ||
US15/699,654 US10681814B2 (en) | 2017-09-08 | 2017-09-08 | High density multi-component packages |
US15/804,515 US10707145B2 (en) | 2017-09-08 | 2017-11-06 | High density multi-component packages |
US15/804,515 | 2017-11-06 | ||
US15/852,799 | 2017-12-22 | ||
US15/852,799 US10178770B1 (en) | 2017-12-22 | 2017-12-22 | Higher density multi-component and serial packages |
PCT/US2018/050142 WO2019051346A1 (en) | 2017-09-08 | 2018-09-10 | HIGH-DENSITY MULTI-COMPONENT HOUSINGS IN SERIES |
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JP2020534675A (ja) | 2020-11-26 |
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