JP7105847B2 - 表示装置 - Google Patents
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- JP7105847B2 JP7105847B2 JP2020177431A JP2020177431A JP7105847B2 JP 7105847 B2 JP7105847 B2 JP 7105847B2 JP 2020177431 A JP2020177431 A JP 2020177431A JP 2020177431 A JP2020177431 A JP 2020177431A JP 7105847 B2 JP7105847 B2 JP 7105847B2
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
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Description
位供給ライン162bの間で第2低電位供給ライン162bと交差するように第2低電位供給ライン162bから分岐されて形成される。これにより、第1低電位供給ライン162aは第2低電位供給ライン162bの抵抗を補償することによって低電位供給ライン162の電圧降下(IR drop)を最小化することができる。
ル(Ni)、ネオジム(Nd)及び銅(Cu)のいずれか1種又はこれらの合金でなる単層又は多層であってもよいが、これに限定されない。
上部バッファー層122は下部層間絶縁膜116、118に比べて水素含有量の低い無機膜で形成される。例えば、上部層間絶縁膜124及び上部バッファー層122は酸化シリコン(SiOx)で形成され、下部層間絶縁膜116、118は窒化シリコン(SiNx)で形成される。これにより、酸化物半導体層104の熱処理工程時に下部層間絶縁膜116、118内の水素及び多結晶半導体層154の水素が酸化物半導体層104に拡散することを防止することができる。
フィルム又は無機及び有機封止層の組合せでなる封止スタックの無機封止層が配置される。このような信号リンク176は第1開口部192によって露出されたマルチバッファー層140、下部バッファー層112、下部ゲート絶縁膜114、第1及び第2下部層間絶縁膜116、118の側面と、第2開口部194によって露出された上部層間絶縁膜124の側面と第2下部層間絶縁膜118の上面上に形成されるので、階段状に形成される。一方、ベンディング領域BAには第1及び第2平坦化層126、128を貫通する少なくとも一つの水分遮断ホール(図示せず)が配置されることもできる。この水分遮断ホールは信号リンク176の間、及び信号リンク176の上部の少なくとも一つに形成される。この水分遮断ホールは外部からの水分が信号リンク176上に配置される第1及び第2平坦化層126、128の少なくとも一つを通じてアクティブ領域AAの内部に浸透することを防止する。
される。その後、下部バッファー層112が形成された基板101上にLPCVD(Low Pressure Chemical Vapor Deposition)、PECVD(Plasma Enhanced Chemical Vapor Deposition)などの方法で非晶質シリコン薄膜が形成される。その後、非晶質シリコン薄膜が結晶化することによって多結晶シリコン薄膜に形成される。そして、多結晶シリコン薄膜を第1マスクを用いるフォトリソグラフィー工程及びエッチング工程でパターニングされることによって多結晶半導体層154が形成される。
ルチバッファー層140、下部バッファー層112、下部ゲート絶縁膜114、第1下部層間絶縁膜116、第2下部層間絶縁膜118を貫通するように形成される。
104はプラズマによって露出され、プラズマによって露出された酸化物半導体層104内の酸素はプラズマガスと反応して除去される。これにより、第2ゲート電極102と重畳しない酸化物半導体層104は導体化してソース及びドレイン領域として形成される。
形成された基板101上にアノード電極132が形成される。
104 酸化物半導体層
106、156 ソース電極
108、110 ドレイン電極
130 発光素子
154 多結晶半導体層
162 低電位供給ライン
172 高電位供給ライン
176、LK 信号リンク
180 ストレージキャパシタ
192、194 開口部
Claims (17)
- アクティブ領域とベンディング領域を有する基板と、
前記アクティブ領域に配置され、第1半導体層、前記第1半導体層を覆う下部ゲート絶縁膜、前記下部ゲート絶縁膜上の第1ゲート電極、及び、前記第1半導体層上に位置する第1ソース電極及び第1ドレイン電極を有する第1薄膜トランジスタと、
前記アクティブ領域に配置され、第2半導体層を有する第2薄膜トランジスタと、
前記基板と前記第2薄膜トランジスタとの間に配置される、複数の絶縁膜と、
前記ベンディング領域に配置される少なくとも一つの開口部であって、前記複数の絶縁膜の側面を露出する、少なくとも一つの開口部と、
前記アクティブ領域に配置される前記第2薄膜トランジスタを覆い、前記少なくとも一つの開口部により露出される前記複数の絶縁膜の側面と接触し、前記ベンディング領域内で前記基板と接触する、第1平坦化層と、
前記第1平坦化層上に配置される、第2平坦化層と、
前記第2平坦化層上に配置される、発光素子と、
前記第2薄膜トランジスタ及び前記発光素子と接続し、前記第1平坦化層と前記第2平坦化層の間に配置される画素連結電極と、
前記アクティブ領域に配置される信号ラインと接続され、前記少なくとも一つの開口部によって露出された前記ベンディング領域で前記第1及び第2平坦化層の間に配置される信号リンクと、
前記下部ゲート絶縁膜上に配置されるストレージ下部電極と、
前記ストレージ下部電極と重畳するストレージ上部電極と、を含み、
前記ストレージ下部電極は前記第1ゲート電極と同一平面上に同一素材でなり、
前記信号リンクは前記画素連結電極と同一平面上に同一素材でなる、表示装置。 - 前記第2薄膜トランジスタは、
前記第2半導体層と重畳する第2ゲート電極と、前記第2半導体層の下部に位置する第2ソース電極及び第2ドレイン電極とを含む、請求項1に記載の表示装置。 - 前記第1及び第2ソース電極と前記第1及び第2ドレイン電極のそれぞれは前記第2半導体層の下部に配置される、請求項2に記載の表示装置。
- 前記複数の絶縁膜は、
前記第1ソース電極及び第1ドレイン電極のそれぞれと前記第1半導体層の間に配置される少なくとも一層の下部絶縁膜と、
前記第2ソース電極及び第2ドレイン電極のそれぞれと前記第2半導体層の間に配置される上部バッファー層と、
前記基板上に配置されるマルチバッファー層と、
前記マルチバッファー層上に配置される下部バッファー層と、
前記第2薄膜トランジスタを覆うように配置される上部層間絶縁膜とを含む、請求項2に記載の表示装置。 - 前記ベンディング領域に配置される前記マルチバッファー層、前記下部バッファー層及び前記少なくとも一層の下部絶縁膜は、その中に形成される第1開口部を含み、前記ベンディング領域に配置される前記上部層間絶縁膜は、その中に形成される第2開口部を含む、請求項4に記載の表示装置。
- 前記ベンディング領域の基板は前記第1及び第2開口部によって露出される、請求項5に記載の表示装置。
- 前記少なくとも一層の下部絶縁膜は、
前記下部バッファー層上に配置される前記下部ゲート絶縁膜と、
前記下部ゲート絶縁膜上に配置される少なくとも一層の第1下部層間絶縁膜と、
前記少なくとも一層の第1下部層間絶縁膜上の最上部面上に配置される少なくとも一層の第2下部層間絶縁膜とを含み、
前記第1及び第2ソース電極と前記第1及び第2ドレイン電極は前記少なくとも一層の第2下部層間絶縁膜の最上部面上に同じ素材でなり、
前記第2半導体層は前記第1及び第2ソース電極と前記第1及び第2ドレイン電極を覆う前記上部バッファー層上に配置される、請求項6に記載の表示装置。 - 前記ストレージ上部電極は前記少なくとも一層の第1下部層間絶縁膜を挟んで前記ストレージ下部電極と重畳され、
前記ストレージ下部電極及び前記ストレージ上部電極の少なくとも一つは前記第2半導体層と重畳する、請求項7に記載の表示装置。 - 前記発光素子のカソード電極と接続される低電位供給ラインと、
前記低電位供給ラインと重畳するように配置される高電位供給ラインとをさらに含み、
前記低電位供給ライン及び前記高電位供給ラインの少なくとも一つはメッシュ状に配置される、請求項3に記載の表示装置。 - 前記第1平坦化層は、上部層間絶縁膜上に配置され、
前記第2平坦化層は、前記画素連結電極を覆うように配置される、請求項9に記載の表示装置。 - 前記低電位供給ラインは、
互いに交差する第1及び第2低電位供給ラインを含み、
前記高電位供給ラインは、
前記第1低電位供給ラインに平行な第1高電位供給ラインと、
上部バッファー層、前記上部層間絶縁膜及び第1平坦化層を挟んで前記第2低電位供給ラインと重畳する第2高電位供給ラインとを含む、請求項10に記載の表示装置。 - 前記第2低電位供給ラインは前記画素連結電極と同一平面上に同一素材でなり、
前記第2高電位供給ラインは前記第2ソース電極及び第2ドレイン電極と同一平面上に同一素材でなる、請求項11に記載の表示装置。 - 前記発光素子を駆動する画素駆動回路をさらに含み、
前記画素駆動回路は、
前記第2薄膜トランジスタでなる駆動トランジスタと、
前記駆動トランジスタと接続され、前記第1薄膜トランジスタでなるスイッチングトランジスタとを含む、請求項9に記載の表示装置。 - 前記画素駆動回路は、
前記第2薄膜トランジスタでなり、前記駆動トランジスタと接続された第2スイッチングトランジスタと、
前記第1薄膜トランジスタでなり、前記高電位供給ラインと接続された第3スイッチングトランジスタとをさらに含む、請求項13に記載の表示装置。 - 前記第1半導体層は多結晶半導体層を含み、前記第2半導体層は酸化物半導体層を含む、請求項1に記載の表示装置。
- 前記ベンディング領域の前記基板の厚さは、前記アクティブ領域の前記基板の厚さよりも薄い、請求項1に記載の表示装置。
- 前記信号リンクの領域は、前記ベンディング領域のベンディング方向に交差する方向に面積が広げられる、請求項1に記載の表示装置。
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KR102400022B1 (ko) | 2015-12-30 | 2022-05-19 | 엘지디스플레이 주식회사 | 측부 구부림 구조를 갖는 플렉서블 유기발광 다이오드 표시장치 |
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KR102514411B1 (ko) * | 2016-03-31 | 2023-03-28 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
KR102420327B1 (ko) * | 2017-06-13 | 2022-07-14 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 이를 구비한 표시 장치 및 이의 제조 방법 |
KR101865007B1 (ko) * | 2017-12-01 | 2018-06-05 | 엘지디스플레이 주식회사 | 플렉서블표시장치 |
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