JP7089999B2 - 電子部品内蔵基板 - Google Patents
電子部品内蔵基板 Download PDFInfo
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- JP7089999B2 JP7089999B2 JP2018178529A JP2018178529A JP7089999B2 JP 7089999 B2 JP7089999 B2 JP 7089999B2 JP 2018178529 A JP2018178529 A JP 2018178529A JP 2018178529 A JP2018178529 A JP 2018178529A JP 7089999 B2 JP7089999 B2 JP 7089999B2
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- layer
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- connection pad
- electronic component
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Landscapes
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- Production Of Multi-Layered Print Wiring Board (AREA)
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Description
なお、添付図面は、便宜上、構成要素を拡大して示している場合があり、各構成要素の寸法比率などが実際のものと、または別の図面中のものと異なる場合がある。また、断面図では、各部材の断面構造を分かりやすくするために、一部の部材のハッチングを梨地模様に代えて示し、一部の部材のハッチングを省略している。
下基板10は、絶縁層11、配線層12、絶縁層13、配線層14、ソルダーレジスト層15、配線層16、ソルダーレジスト層17を有している。
絶縁層13は、絶縁層11の上面側に、配線層12を覆うように形成されている。絶縁層13の材料としては、例えば、熱硬化性のエポキシ系樹脂等の絶縁性樹脂を用いることができる。絶縁層13は、シリカ(二酸化ケイ素)等のフィラーを含有してもよい。
上基板20において、絶縁層21としては、例えば、ガラスクロスにエポキシ系樹脂等の絶縁性樹脂を含浸させた所謂ガラスエポキシ基板等を用いることができる。絶縁層11として、ガラス繊維、炭素繊維、アラミド繊維等の織布や不織布にエポキシ系樹脂等の絶縁性樹脂を含浸させた基板等を用いてもよい。なお、各図において、ガラスクロス等の図示は省略されている。
絶縁層23は、絶縁層21の下面側に、配線層22を覆うように形成されている。絶縁層23の材料としては、例えば、熱硬化性のエポキシ系樹脂等の絶縁性樹脂を用いることができる。絶縁層23は、シリカ等のフィラーを含有してもよい。
次に、上記の電子部品内蔵基板1の作用を説明する。
電子部品内蔵基板1は、下基板10、上基板20、半導体素子(半導体チップ)30、ボンディングワイヤ50、アンダーフィル樹脂60を有している。半導体素子30は第2接続パッドP32と一部の第1接続パッドP31とを接続する配線パターンを有している。金属ポスト33は下基板10の実装用パッドP11に接続され、第2接続パッドP32はボンディングワイヤ50を介して上基板20の接続用パッドP22に接続されている。アンダーフィル樹脂60は、半導体素子30と下基板10との間に充填され、素子本体31の下面31b、第1接続パッドP31及び第2接続パッドP32、金属ポスト33、及びボンディングワイヤ50の第1端部51を被覆する。下基板10は、収容部18を有している。収容部18は、後述するボンディングワイヤの一部を収容する。
次に、上記の電子部品内蔵基板1の製造する工程を説明する。
図4(a)に示す工程では、上基板20を作製する。なお、図4(a)では、図1に示す上基板20の上下を反転して示している。
次に、絶縁層21の上面に、配線層22を覆うように絶縁層23を形成する。絶縁層23は、例えば熱硬化性のエポキシ系樹脂等の絶縁性樹脂フィルムをラミネートして形成することができる。なお、液状又はペースト状のエポキシ系樹脂等を用いて絶縁層23を形成してもよい。
次に、絶縁層23の上面に、配線層24の一部を露出する開口部25Xを有するソルダーレジスト層25を形成する。また、絶縁層21の下面に、配線層26の一部を露出する開口部27Xを有するソルダーレジスト層27を形成する。ソルダーレジスト層25は、例えば、液状又はペースト状の感光性のエポキシ系樹脂等の絶縁性樹脂を、配線層24を被覆するように絶縁層23の上面にスクリーン印刷法、ロールコート法、又は、スピンコート法等で塗布することにより形成できる。同様に、ソルダーレジスト層27は、例えば、液状又はペースト状の感光性のエポキシ系樹脂等の絶縁性樹脂を、配線層26を被覆するように絶縁層21の下面にスクリーン印刷法、ロールコート法、又は、スピンコート法等で塗布することにより形成できる。
具体的には、絶縁層11を準備し、絶縁層11の上面に配線層12を形成する。配線層12は、例えばサブトラクティブ法等の各種の配線形成方法を用いて形成できる。
次に、絶縁層13の上面に、配線層14の一部を露出する開口部15Xを有するソルダーレジスト層15を形成する。また、絶縁層11の下面に、配線層16の一部を露出する開口部17Xを有するソルダーレジスト層17を形成する。ソルダーレジスト層15は、例えば、液状又はペースト状の感光性のエポキシ系樹脂等の絶縁性樹脂を、配線層14を被覆するように絶縁層13の上面にスクリーン印刷法、ロールコート法、又は、スピンコート法等で塗布することにより形成できる。同様に、ソルダーレジスト層17は、例えば、液状又はペースト状の感光性のエポキシ系樹脂等の絶縁性樹脂を、配線層16を被覆するように絶縁層11の下面にスクリーン印刷法、ロールコート法、又は、スピンコート法等で塗布することにより形成できる。
図6に示す工程では、下基板10に半導体素子30を実装する。具体的には、下基板10の実装用パッドP11を、半導体素子30の金属ポスト33に対向させる。そして、下基板10の実装用パッドP11に、はんだにより半導体素子30の金属ポスト33を接続する。このとき、半導体素子30に接続されたボンディングワイヤ50は、そのループ部53が下基板10の収容部18に収容される。
以上記述したように、本実施形態によれば、以下の効果を奏する。
(1)電子部品内蔵基板1は、下基板10、上基板20、半導体素子(半導体チップ)30、ボンディングワイヤ50、アンダーフィル樹脂60を有している。下基板10は、上面側に半導体素子30を実装するための実装用パッドP11を有し、上基板20は、下面側に半導体素子30に接続される接続用パッドP22を有している。半導体素子30は、素子本体31、第1接続パッドP31、第2接続パッドP32、金属ポスト33とを有している。半導体素子30は第2接続パッドP32と一部の第1接続パッドP31とを接続する配線パターンを有している。金属ポスト33は下基板10の実装用パッドP11に接続され、第2接続パッドP32はボンディングワイヤ50を介して上基板20の接続用パッドP22に接続されている。アンダーフィル樹脂60は、半導体素子30と下基板10との間に充填され、素子本体31の下面31b、第1接続パッドP31及び第2接続パッドP32、金属ポスト33、及びボンディングワイヤ50の第1端部51を被覆する。下基板10は、収容部18を有している。収容部18は、後述するボンディングワイヤの一部を収容する。
次に、上記実施形態に対する変更例を説明する。なお、以下に説明する変更例において、上記実施形態と同じ構成部材については同じ符号を付してその説明を省略することがある。
図10(a)に示す電子部品内蔵基板100は、下基板110、上基板20、半導体素子(半導体チップ)30、ボンディングワイヤ50、アンダーフィル樹脂60、封止樹脂70を有している。
絶縁層313は、絶縁層311の上面側に、配線層312を覆うように形成されている。絶縁層313の材料としては、例えば、熱硬化性のエポキシ系樹脂等の絶縁性樹脂を用いることができる。絶縁層313は、シリカ(二酸化ケイ素)等のフィラーを含有してもよい。
なお、図12では、下基板310に3層の絶縁層311,313,315が含まれるが、下基板を4層以上の絶縁層を含む構成としてもよい。この場合、収容部320は、2層以上の絶縁層に跨がって形成されていてもよい。
・上基板を1層又は3層の絶縁層を含む構成としてもよい。
・上述の実施形態及び各変更例の一部又は全てを適宜組み合わせて実施することもできる。
10 下基板
15a 上面
18 収容部
P11 実装用パッド
18c 底面
20 上基板
27b 下面
P22 接続用パッド
30 電子部品
P31 第1接続パッド
P32 第2接続パッド
33 金属ポスト
50 ボンディングワイヤ
51 第1端部
52 第2端部
53 ループ部
60 アンダーフィル樹脂
70 封止樹脂
Claims (8)
- 上面に実装用パッドを有する下基板と、
下面に接続用パッドを有する上基板と、
前記下基板と前記上基板との間に配設され、下面に第1接続パッド及び第2接続パッドを有し、前記第1接続パッドが金属ポストにより前記下基板の前記実装用パッドに接続された電子部品と、
前記電子部品の第2接続パッドに第1端部が接続され、前記上基板の接続用パッドに第2端部が接続されたボンディングワイヤと、
前記電子部品と前記下基板との間に充填され、前記金属ポストと、前記ボンディングワイヤの前記第1端部とを覆うアンダーフィル樹脂と、
を有し、
前記ボンディングワイヤのループ部は前記金属ポストの下端よりも低く位置し、
前記下基板は、前記ボンディングワイヤのループ部を収容する収容部を有すること、
を特徴とする電子部品内蔵基板。 - 前記アンダーフィル樹脂は、前記収容部に収容された前記ボンディングワイヤの前記ループ部を覆うことを特徴とする請求項1に記載の電子部品内蔵基板。
- 前記収容部は、前記電子部品の周縁部に沿って延びる第1の溝を有し、前記アンダーフィル樹脂は前記第1の溝に充填されていることを特徴とする請求項1又は2に記載の電子部品内蔵基板。
- 前記収容部は、前記電子部品の周縁部に沿って延びる第1の溝と、前記第1の溝から前記下基板の側面まで延びる第2の溝とを有することを特徴とする請求項1又は2に記載の電子部品内蔵基板。
- 前記収容部は、前記下基板の側面まで延びるように形成されていることを特徴とする請求項1又は2に記載の電子部品内蔵基板。
- 前記収容部は、平面視で、前記電子部品の前記第2接続パッドと重なる領域に配置されていることを特徴とする請求項1~5の何れか一項に記載の電子部品内蔵基板。
- 前記下基板と前記上基板との間に充填され、前記電子部品を封止する封止樹脂を有することを特徴とする請求項1~6の何れか一項に記載の電子部品内蔵基板。
- 前記封止樹脂と前記アンダーフィル樹脂はフィラーを含む絶縁樹脂であり、前記アンダーフィル樹脂に含まれるフィラーは、前記封止樹脂に含まれるフィラーより小さいことを特徴とする請求項7に記載の電子部品内蔵基板。
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