JP7075444B2 - 改良された透過率を有する近赤外線光学干渉フィルタ - Google Patents
改良された透過率を有する近赤外線光学干渉フィルタ Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title description 15
- 238000002834 transmittance Methods 0.000 title description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 57
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 52
- 229910052757 nitrogen Inorganic materials 0.000 claims description 52
- 229910052739 hydrogen Inorganic materials 0.000 claims description 41
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 25
- 239000003989 dielectric material Substances 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 238000004544 sputter deposition Methods 0.000 description 21
- 230000008021 deposition Effects 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000005984 hydrogenation reaction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
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- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
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- 235000012239 silicon dioxide Nutrition 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000004297 night vision Effects 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000521 electronic sputter etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
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- 230000003993 interaction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/207—Filters comprising semiconducting materials
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
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Description
本願は、米国仮特許出願第62/107,112号(2015年1月23日出願)に対する優先権を主張し、上記出願の全体は、参照により本明細書に完全に引用される。
以下の開示は、光学技術分野、光学フィルタ技術分野、および関連技術分野に関する。
例えば、本願は以下の項目を絵提供する。
(項目1)
干渉フィルタであって、前記干渉フィルタは、層スタックを備え、前記層スタックは、
少なくとも、
水素化非晶質ケイ素の層と、
前記水素化非晶質ケイ素の屈折率より低い屈折率を有する1つ以上の誘電材料の層と
の複数の層を備え、
前記1つ以上の誘電材料の層は、1.9~2.7(それらの値を含む)の範囲内の屈折率を有する誘電材料の層を含む、干渉フィルタ。
(項目2)
前記1.9~2.7(それらの値を含む)の範囲内の屈折率を有する誘電材料の層は、Si3N4、SiOxNy(yは、1.9以上の屈折率を提供するために十分に大きい)、Ta2O5、Nb2O5、またはTiO2を備えている1つ以上の層を含む、項目1に記載の干渉フィルタ。
(項目3)
前記1つ以上の誘電材料の層は、SiO2層をさらに含む、項目2に記載の干渉フィルタ。
(項目4)
前記層スタックは、800~1100nm(それらの値を含む)の範囲内の通過帯域中心波長を有するように構成されている、項目1-3のいずれか1項に記載の干渉フィルタ。
(項目5)
前記層スタックは、750~1100nm(それらの値を含む)の範囲内の通過帯域中心波長を有するように構成されている、項目1-3のいずれか1項に記載の干渉フィルタ。
(項目6)
前記層スタックを支持する透明基板をさらに備えている、項目1-5のいずれか1項に記載の干渉フィルタ。
(項目7)
前記透明基板は、ガラス基板を備えている、項目6に記載の干渉フィルタ。
(項目8)
前記層スタックは、透明基板の片側の第1の層スタックと、前記透明基板の反対側の第2の層スタックとを含む、項目6-7のいずれか1項に記載の干渉フィルタ。
(項目9)
前記第1の層は、低域通過カットオフ波長を伴う低域通過フィルタを画定し、前記第2の層スタックは、高域通過カットオフ波長を伴う高域通過フィルタを画定し、前記干渉フィルタは、前記高域通過カットオフ波長と前記低域通過カットオフ波長との間に画定された通過帯域を有する、項目8に記載の干渉フィルタ。
(項目10)
前記層スタックを基板上に配置することを含む動作によって、項目1-9のいずれか1項に記載の干渉フィルタを製作することを含む方法。
(項目11)
前記配置することは、少なくともケイ素系スパッタリング標的を使用して、スパッタリングすることを含む、項目10に記載の方法。
(項目12)
干渉フィルタであって、前記干渉フィルタは、層スタックを備え、前記層スタックは、
少なくとも、
水素化非晶質ケイ素の層と、
前記水素化非晶質ケイ素の屈折率より低い屈折率を有する1つ以上の誘電材料の層と
の複数の層を備え、
前記1つ以上の誘電材料の層は、1.9~2.7(それらの値を含む)の範囲内の屈折率を有する誘電材料の層を含む、干渉フィルタ。
(項目13)
前記1.9~2.7(それらの値を含む)の範囲内の屈折率を有する誘電材料の層は、Si3N4、SiOxNy(yは、1.9以上の屈折率を提供するために十分に大きい)、Ta2O5、Nb2O5、またはTiO2を備えている1つ以上の層を含む、項目12に記載の干渉フィルタ。
(項目14)
前記1つ以上の誘電材料の層は、SiO2層をさらに含む、項目12-13のいずれか1項に記載の干渉フィルタ。
(項目15)
前記層スタックは、水素化非晶質ケイ素の介在層を伴わずに、1.9~2.7(それらの値を含む)の範囲内の屈折率を有する誘電材料の層に直接隣接する少なくとも1つのSiO2層を含む、項目14に記載の干渉フィルタ。
の使用は、これを
として書かれることを可能にする。したがって、角度シフト効果は、層の小さな屈折率nLによって悪化させられることが分かる。
Claims (2)
- 干渉フィルタであって、
前記干渉フィルタは、層スタックを備え、
前記層スタックは、複数の層を備え、
前記複数の層は、
水素化非晶質ケイ素の層であって、前記水素化非晶質ケイ素は、窒素を含み(a-Si:H,N)、前記水素化非晶質ケイ素は、2%~8%の水素および3%~7%の窒素の原子濃度を有する、水素化非晶質ケイ素の層と、
前記水素化非晶質ケイ素の屈折率より低い屈折率を有する1つ以上の誘電材料の層と
を少なくとも含み、
前記1つ以上の誘電材料の層は、1.9以上かつ2.7以下の範囲内の屈折率を有する誘電材料の層を含み、
前記1つ以上の誘電材料の層は、SiO2層をさらに含み、
前記層スタックは、750nm以上かつ1100nm以下の通過帯域波長範囲を有するように構成されており、
前記層スタックは、水素化非晶質ケイ素の介在層を伴うことなく、1.9以上かつ2.7以下の範囲内の屈折率を有する誘電材料の層に直接隣接する少なくとも1つのSiO2層を含む、干渉フィルタ。 - 1.9以上かつ2.7以下の範囲内の屈折率を有する誘電材料の層は、Si3N4、SiOxNy(yは、1.9以上の屈折率を提供するために十分に大きい)、Ta2O5、Nb2O5、または、TiO2を備えている1つ以上の層を含む、請求項1に記載の干渉フィルタ。
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KR102502192B1 (ko) | 2023-02-21 |
TWI647490B (zh) | 2019-01-11 |
CN112748488A (zh) | 2021-05-04 |
CN107209305A (zh) | 2017-09-26 |
US9989684B2 (en) | 2018-06-05 |
JP2020149071A (ja) | 2020-09-17 |
JP2018504635A (ja) | 2018-02-15 |
TW201632920A (zh) | 2016-09-16 |
JP7498220B2 (ja) | 2024-06-11 |
US20160216419A1 (en) | 2016-07-28 |
EP3828604A1 (en) | 2021-06-02 |
KR102502192B9 (ko) | 2023-11-20 |
JP2022097725A (ja) | 2022-06-30 |
CN107209305B (zh) | 2021-03-16 |
EP3248032B1 (en) | 2020-11-25 |
WO2016118919A1 (en) | 2016-07-28 |
EP3248032A1 (en) | 2017-11-29 |
KR20230028582A (ko) | 2023-02-28 |
JP2024103644A (ja) | 2024-08-01 |
KR20170106448A (ko) | 2017-09-20 |
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