JP7069308B2 - 低キャパシタンスフィールドプレート構造を有するトランジスタ - Google Patents
低キャパシタンスフィールドプレート構造を有するトランジスタ Download PDFInfo
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- 230000005669 field effect Effects 0.000 claims description 56
- 239000004065 semiconductor Substances 0.000 claims description 44
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- 238000000034 method Methods 0.000 claims description 20
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 230000005685 electric field effect Effects 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
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- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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Description
Claims (11)
- ソース接続フィールドプレート電界効果トランジスタ(FET)であって、
半導体の表面に沿って横方向に配置された第1電極構造、ゲート電極構造、及び第2電極構造であり、前記ゲート電極構造が、前記第1電極構造と前記第2電極構造との間でのキャリアの流れを制御する、第1電極構造、ゲート電極構造、及び第2電極構造と、
一端が前記第1電極構造に接続され、第2端が、前記ゲート電極構造と前記第2電極構造との間に配置され、前記第2端が、ギャップによって前記第2電極構造から離隔されている、フィールドプレート構造と、
前記半導体の上に配置された誘電体構造であり、前記フィールドプレート構造の下に配置された第1の部分と、前記ギャップの下の第2の部分と、を持つ誘電体構造と、
を有し、
前記第2の部分は、前記第1の部分よりも薄く、
前記誘電体構造の前記第1の部分は、底部層と、該底部層上に配置された中間層と、該中間層上に配置された上部層とを有し、前記底部層、前記中間層、及び前記上部層は前記ゲート電極構造上に配置されており、前記誘電体構造の前記第2の部分は、前記底部層の延在部分を有し、前記中間層は、前記上部層及び前記底部層とは異なる材料であり、前記中間層及び前記上部層は前記ギャップで終端しており、
前記中間層はエッチング停止層であり、前記底部層及び前記上部層は、所定のエッチング液に対して、前記中間層のエッチング速度よりも少なくとも一桁高いエッチング速度を持つ、
電界効果トランジスタ(FET)。 - 当該電界効果トランジスタ(FET)は、前記誘電体構造の第3の部分に第2のギャップを含み、該第2のギャップは、前記第1電極構造と前記ゲート電極構造との間に配置され、且つ、前記誘電体構造の前記第3の部分は、前記第2のギャップの下で、前記誘電体構造の前記第1の部分よりも薄い、請求項1に記載の電界効果トランジスタ(FET)。
- 前記上部層と前記底部層とが同じ材料のものである、請求項1に記載の電界効果トランジスタ(FET)。
- 前記中間層は、前記所定のエッチング液とは異なるエッチング液に対して、前記底部層のエッチング速度よりも速いエッチング速度を持つ、請求項1に記載のFET。
- 半導体と、
前記半導体の表面に沿って横方向に配置されたソース電極構造、ドレイン電極構造、及びゲート電極構造と、
前記半導体の前記表面の上で横方向に延在する誘電体構造と、
一端で前記ソース電極構造に接続され、第2端が、前記ドレイン電極構造と前記ゲート電極構造との間の前記半導体の第1の領域の上に配置された、フィールドプレート構造であり、当該フィールドプレート構造の前記第2端が、ギャップによって前記ドレイン電極構造から離間されている、フィールドプレート構造と、
を有し、
前記誘電体構造は、
上下方向で前記フィールドプレート構造と前記半導体との間に配置された第1の部分と、
前記第1の部分よりも薄い厚さを持ち、且つ前記ギャップの下の前記半導体の前記表面の第2の領域の上に配置された第2の部分と、
を有し、
前記誘電体構造の前記第1の部分は、底部層と、該底部層上に配置された中間層と、該中間層上に配置された上部層とを有し、前記底部層、前記中間層、及び前記上部層は前記ゲート電極構造上に配置されており、前記誘電体構造の前記第2の部分は、前記底部層の延在部分を有し、前記中間層は、前記上部層及び前記底部層とは異なる材料であり、前記中間層及び前記上部層は前記ギャップで終端しており、
前記中間層はエッチング停止層であり、前記底部層及び前記上部層は、所定のエッチング液に対して、前記中間層のエッチング速度よりも少なくとも一桁高いエッチング速度を持つ、
電界効果トランジスタ(FET)。 - 前記上部層と前記底部層とが同じ材料のものである、請求項5に記載の電界効果トランジスタ(FET)。
- 前記中間層は、前記所定のエッチング液とは異なるエッチング液に対して、前記底部層のエッチング速度よりも速いエッチング速度を持つ、請求項5に記載のFET。
- 前記中間層は、前記底部層と直接接触して配置され、且つ前記上部層は、前記中間層と直接接触して配置され、前記底部層と前記上部層とが同じ材料のものである、請求項5に記載の電界効果トランジスタ(FET)。
- ソース接続フィールドプレート電界効果トランジスタ(FET)を形成する方法であって、
半導体の表面に配置された第1電極構造、第2電極構造、及びゲート電極構造であり、前記ゲート電極構造が、前記第1電極構造と前記第2電極構造との間でのキャリアの流れを制御する、第1電極構造、第2電極構造、及びゲート電極構造と、前記第1電極構造と前記第2電極構造との間の前記半導体の前記表面の上で横方向に延在する誘電体構造であり、当該誘電体構造は、底部層と、該底部層と直接接触して配置された中間層と、エッチング停止層である該中間層と直接接触して配置された上部層とを有し、前記底部層と前記上部層とが同じ材料のものである、誘電体構造と、を有する構造を用意し、
前記ゲート電極構造と前記第2電極構造との間の前記誘電体構造の領域の上に、前記第1電極構造に電気的に接続されたフィールドプレート構造を形成し、
前記フィールドプレート構造のエッジと前記第2電極構造との間に配置された前記誘電体構造の部分に第1のエッチング液を適用し、該第1のエッチング液が、前記上部層を除去して前記エッチング停止層の露出部分で停止することで、前記フィールドプレート構造の前記エッジと前記第2電極構造との間にギャップを作り出し、そして、
前記エッチング停止層の前記露出部分に、前記第1のエッチング液とは異なる第2のエッチング液を適用し、該第2のエッチング液が、前記エッチング停止層を除去して前記底部層で停止する、
ことを有する方法。 - ソース接続フィールドプレート電界効果トランジスタ(FET)であって、
半導体の表面に沿って横方向に配置された第1電極構造、第2電極構造、及び第3電極構造であり、前記第2電極構造が、前記第1電極構造と前記第3電極構造との間でのキャリアの流れを制御する、第1電極構造、第2電極構造、及び第3電極構造と、
一端が前記第1電極構造に接続され、第2端が、前記第2電極構造と前記第3電極構造との間に配置され且つギャップによって前記第3電極構造から離隔された、フィールドプレート構造と、
前記半導体の上に配置された誘電体構造であり、前記フィールドプレート構造の下に配置された第1の部分と、前記ギャップの下の第2の部分と、を持つ誘電体構造と、
を有し、
前記第2の部分は、前記第1の部分よりも薄く、
前記誘電体構造の前記第1の部分は、底部層と、該底部層上に配置された中間層と、該中間層上に配置された上部層とを有し、前記底部層、前記中間層、及び前記上部層は前記第2電極構造上に配置されており、前記誘電体構造の前記第2の部分は、前記底部層の延在部分を有し、前記中間層は、前記上部層及び前記底部層とは異なる材料であり、前記中間層及び前記上部層は前記ギャップで終端しており、
前記中間層はエッチング停止層であり、前記底部層及び前記上部層は、所定のエッチング液に対して、前記中間層のエッチング速度よりも少なくとも一桁高いエッチング速度を持つ、
電界効果トランジスタ(FET)。 - 当該電界効果トランジスタ(FET)は、前記誘電体構造の第3の部分に第2のギャップを含み、該第2のギャップは、前記第1電極構造と前記第2電極構造との間に配置され、且つ、前記誘電体構造の前記第3の部分は、前記第2のギャップの下で、前記誘電体構造の前記第1の部分よりも薄い、請求項10に記載の電界効果トランジスタ(FET)。
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