JP7053461B2 - 半導体パワーモジュール - Google Patents
半導体パワーモジュール Download PDFInfo
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- JP7053461B2 JP7053461B2 JP2018520961A JP2018520961A JP7053461B2 JP 7053461 B2 JP7053461 B2 JP 7053461B2 JP 2018520961 A JP2018520961 A JP 2018520961A JP 2018520961 A JP2018520961 A JP 2018520961A JP 7053461 B2 JP7053461 B2 JP 7053461B2
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- 239000004065 semiconductor Substances 0.000 title claims description 92
- 239000000758 substrate Substances 0.000 claims description 199
- 239000004020 conductor Substances 0.000 claims description 87
- 229920005989 resin Polymers 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 30
- 230000002093 peripheral effect Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 description 14
- 239000010949 copper Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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Description
低電圧側導体パターン86は、絶縁基板41の本体部73を挟んで第2高電圧側導体パターン79と対向している。より具体的には、低電圧側導体パターン86の第1低電圧側部分87は、絶縁基板41の本体部73を挟んで第2高電圧側導体パターン79の第1高電圧側部分81と対向している。低電圧側導体パターン86の第3低電圧側部分89は、絶縁基板41の本体部73を挟んで第2高電圧側導体パターン79の第2高電圧側部分82と対向している。
1 半導体パワーモジュール
2 出力側端子
3 高電圧側端子
4 低電圧側端子
5 第1スイッチング素子
6 第2スイッチング素子
7 ハーフブリッジ回路
31 パッケージ本体部
35 放熱部材
41 絶縁基板
42 絶縁基板の表面
43 絶縁基板の裏面
44 支持基板
46 支持基板の表面
47 支持基板の裏面
76 絶縁基板の第1除去領域
77 絶縁基板の第2除去領域
Claims (21)
- 一方表面および他方表面を有する絶縁基板と、
前記絶縁基板の前記一方表面と対向する対向表面を有する支持基板と、
前記支持基板の前記対向表面上に配置された第1スイッチング素子、第2スイッチング素子および出力側端子と、
前記絶縁基板の前記一方表面側に配置された第1電源端子と、
前記絶縁基板を挟んで前記第1電源端子に対向するように、前記絶縁基板の前記他方表面側に配置され、前記第1電源端子に印加される電圧とは異なる大きさの電圧が印加される第2電源端子と、を含み、
前記第1電源端子、前記第1スイッチング素子および前記出力側端子は電気的に接続されており、
前記第2電源端子、前記第2スイッチング素子および前記出力側端子は電気的に接続されており、
前記出力側端子は、前記第1電源端子の厚さまたは前記第2電源端子の厚さよりも大きい厚さを有している、半導体パワーモジュール。 - 前記出力側端子の厚さは、前記第1電源端子の厚さおよび前記第2電源端子の厚さの合計値以上の厚さを有している、請求項1に記載の半導体パワーモジュール。
- 前記出力側端子と、前記第1電源端子、前記第2電源端子、前記第1スイッチング素子、および、前記第2スイッチング素子によってハーフブリッジ回路が構成されている、請求項1または2に記載の半導体パワーモジュール。
- 前記第1電源端子に流れる電流の方向と前記第2電源端子に流れる電流の方向とが、前記絶縁基板を挟んで逆向きである、請求項1~3のいずれか一項に記載の半導体パワーモジュール。
- 前記第1電源端子は、高電圧側端子であり、
前記第2電源端子は、前記第1電源端子に印加される電圧よりも低い電圧が印加される低電圧側端子である、請求項1~4のいずれか一項に記載の半導体パワーモジュール。 - 前記支持基板は、前記対向表面と反対側の裏面を有し、当該裏面に前記第1スイッチング素子および前記第2スイッチング素子から生じる熱を放散させるための除去領域を有している、請求項1~5のいずれか一項に記載の半導体パワーモジュール。
- 前記支持基板の前記対向表面には、導体パターンが形成されている、請求項1~6のいずれか一項に記載の半導体パワーモジュール。
- 前記支持基板の前記裏面には、放熱部材が設けられている、請求項6に記載の半導体パワーモジュール。
- 前記絶縁基板は、5mm以下の厚さを有している、請求項1~8のいずれか一項に記載の半導体パワーモジュール。
- 前記支持基板の前記対向表面には導体パターンが設けられており、
前記導体パターンには、前記第1スイッチング素子および前記第2スイッチング素子が、それぞれ、複数配置されている、請求項1~9のいずれか一項に記載の半導体パワーモジュール。 - 前記導体パターンと前記第1スイッチング素子とは、ワイヤにより電気的に接続されている、請求項10のいずれか一項に記載の半導体パワーモジュール。
- 前記出力側端子、前記第1電源端子および前記第2電源端子を選択的に露出させるように前記絶縁基板および前記支持基板を封止する樹脂をさらに含み、
前記第1電源端子および前記第2電源端子は、前記絶縁基板と共に前記樹脂から露出している、請求項1~11のいずれか一項に記載の半導体パワーモジュール。 - 前記樹脂から露出する前記第1電源端子は、前記樹脂から露出する前記絶縁基板の周縁から内側に向かって間隔を空けた位置に配置されており、
前記樹脂から露出する前記第2電源端子は、前記樹脂から露出する前記絶縁基板の周縁から内側に向かって間隔を空けた位置に配置されている、請求項12に記載の半導体パワーモジュール。 - 前記樹脂から露出する前記第1電源端子の周縁と、前記樹脂から露出する前記絶縁基板の周縁との間の距離が、2mm以上に設定されており、
前記樹脂から露出する前記第2電源端子の周縁と、前記樹脂から露出する前記絶縁基板の周縁との間の距離が、2mm以上に設定されている、請求項13に記載の半導体パワーモジュール。 - 前記出力側端子は、平面視において、前記樹脂を挟んで前記第1電源端子および前記第2電源端子と対向する位置に配置されている、請求項12~14のいずれか一項に記載の半導体パワーモジュール。
- 前記第1スイッチング素子を駆動制御する第1制御端子と、
前記第2スイッチング素子を駆動制御する第2制御端子とをさらに含み、
前記樹脂は、前記第1制御端子および前記第2制御端子を選択的に露出させるように、
前記絶縁基板を封止している、請求項12~15のいずれか一項に記載の半導体パワーモジュール。 - 前記第1制御端子および前記第2制御端子は、前記出力側端子が前記樹脂から露出する方向、ならびに、前記第1電源端子および前記第2電源端子が前記樹脂から露出する方向とは異なる方向に前記樹脂から露出している、請求項16に記載の半導体パワーモジュール。
- 前記第1スイッチング素子は、一対の第1主電極と、前記一対の第1主電極間を流れる電流を制御する第1制御電極とを含み、
前記第2スイッチング素子は、一対の第2主電極と、前記一対の第2主電極間を流れる電流を制御する第2制御電極とを含み、
前記第1制御端子は、前記第1スイッチング素子の前記第1制御電極に電気的に接続されており、
前記第2制御端子は、前記第2スイッチング素子の前記第2制御電極に電気的に接続されている、請求項16または17に記載の半導体パワーモジュール。 - 前記第1スイッチング素子および前記第2スイッチング素子は、MISFET、IGBTまたはBJTを含む、請求項1~18のいずれか一項に記載の半導体パワーモジュール。
- 前記MISFET、前記IGBTまたは前記BJTは、Si基板、SiC基板またはワイドバンドギャップ型の半導体基板に形成されている、請求項19に記載の半導体パワーモジュール。
- 前記第1電源端子および前記第2電源端子間には、500V以上の電圧が印加される、請求項1~20のいずれか一項に記載の半導体パワーモジュール。
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