JP7052441B2 - センサ装置 - Google Patents
センサ装置 Download PDFInfo
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- JP7052441B2 JP7052441B2 JP2018046062A JP2018046062A JP7052441B2 JP 7052441 B2 JP7052441 B2 JP 7052441B2 JP 2018046062 A JP2018046062 A JP 2018046062A JP 2018046062 A JP2018046062 A JP 2018046062A JP 7052441 B2 JP7052441 B2 JP 7052441B2
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- Prior art keywords
- sensor
- adhesive
- elastic
- case
- elastic portion
- Prior art date
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- 239000000853 adhesive Substances 0.000 claims description 68
- 230000001070 adhesive effect Effects 0.000 claims description 68
- 239000000463 material Substances 0.000 claims description 19
- 230000035882 stress Effects 0.000 description 19
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 13
- 239000003921 oil Substances 0.000 description 6
- 239000002861 polymer material Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- 238000001723 curing Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0681—Protection against excessive heat
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/30—Structure, shape, material or disposition of the layer connectors prior to the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
特許文献1 特開平6-186104号公報
特許文献2 特開2001-201415号公報
特許文献3 特開2002-098709号公報
特許文献4 特開2003-083828号公報
Claims (9)
- センサ部と、
前記センサ部を収容するケース部と、
前記センサ部と前記ケース部との間において、前記ケース部と接して設けられ、且つ、前記ケース部よりも弾性率が小さい材料を有する弾性部と、
前記センサ部と前記ケース部との間に設けられる接着剤と
を備え、
前記ケース部は、前記センサ部を載置する載置面に突起部を有し、
前記突起部と前記センサ部との間に前記弾性部が設けられている
センサ装置。 - 前記突起部は、上面に凹部を有し、
前記弾性部は、前記センサ部と前記凹部との間に設けられる
請求項1に記載のセンサ装置。 - 前記接着剤は、前記弾性部との間に界面を有する
請求項1または2に記載のセンサ装置。 - 前記弾性部は、前記接着剤と同一材料を有する
請求項1から3のいずれか一項に記載のセンサ装置。 - 前記弾性部は、前記接着剤よりも弾性率が小さい
請求項1から3のいずれか一項に記載のセンサ装置。 - 前記弾性部は、前記接着剤よりも粘性が高い
請求項1から5のいずれか一項に記載のセンサ装置。 - 前記弾性部は、前記センサ部と接して設けられる
請求項1から6のいずれか一項に記載のセンサ装置。 - 前記弾性部は、前記ケース部に固定されている
請求項1から7のいずれか一項に記載のセンサ装置。 - センサ部と、
前記センサ部を収容するケース部と、
前記センサ部と前記ケース部との間において、前記ケース部と接して設けられ、且つ、前記ケース部よりも弾性率が小さい材料を有する弾性部と、
前記センサ部と前記ケース部との間に設けられる接着剤と
を備え、
前記接着剤は、前記センサ部の下方に設けられ、且つ、前記弾性部と離間して設けられる
センサ装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018046062A JP7052441B2 (ja) | 2018-03-13 | 2018-03-13 | センサ装置 |
US16/258,494 US10928263B2 (en) | 2018-03-13 | 2019-01-25 | Sensor device having adhesive between sensor portion and casing portion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018046062A JP7052441B2 (ja) | 2018-03-13 | 2018-03-13 | センサ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019158622A JP2019158622A (ja) | 2019-09-19 |
JP7052441B2 true JP7052441B2 (ja) | 2022-04-12 |
Family
ID=67905371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018046062A Active JP7052441B2 (ja) | 2018-03-13 | 2018-03-13 | センサ装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10928263B2 (ja) |
JP (1) | JP7052441B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7043904B2 (ja) * | 2018-03-13 | 2022-03-30 | 富士電機株式会社 | センサ装置およびその製造方法 |
JP6708315B2 (ja) * | 2018-06-20 | 2020-06-10 | 株式会社村田製作所 | 押圧センサ及び押圧検出装置 |
JP2021071305A (ja) * | 2019-10-29 | 2021-05-06 | ミネベアミツミ株式会社 | 力覚センサ装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3114403B2 (ja) | 1992-12-22 | 2000-12-04 | 富士電機株式会社 | 半導体圧力センサ |
JP4444424B2 (ja) | 2000-01-21 | 2010-03-31 | 株式会社フジクラ | 半導体圧力センサ |
DE102014200126A1 (de) | 2014-01-08 | 2014-12-04 | Robert Bosch Gmbh | Bauteil mit einem Halbleiterbauelement auf einem Träger |
JP6044368B2 (ja) | 2013-01-31 | 2016-12-14 | 株式会社デンソー | 物理量センサ |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0365627A (ja) * | 1989-08-02 | 1991-03-20 | Mitsubishi Electric Corp | 半導体圧力センサー |
JP2002098709A (ja) | 2000-09-26 | 2002-04-05 | Matsushita Electric Works Ltd | 半導体加速度センサ |
JP2003083828A (ja) | 2001-06-28 | 2003-03-19 | Matsushita Electric Works Ltd | 半導体圧力センサ |
JP4985789B2 (ja) * | 2010-01-13 | 2012-07-25 | 株式会社デンソー | 力学量センサ |
US20150277617A1 (en) * | 2014-03-28 | 2015-10-01 | Paul Gwin | Flexible sensor |
JP6294957B2 (ja) * | 2014-03-31 | 2018-03-14 | 東洋ゴム工業株式会社 | 密閉型二次電池用変形検知センサ |
US10126191B2 (en) * | 2015-08-28 | 2018-11-13 | The Regents Of The University Of California | Capacitive pressure sensing using ionic film sensors |
EP3206027B1 (en) * | 2016-02-11 | 2019-09-11 | Sensirion AG | Sensor chip comprising electrostatic discharge protection element |
JP7043904B2 (ja) * | 2018-03-13 | 2022-03-30 | 富士電機株式会社 | センサ装置およびその製造方法 |
-
2018
- 2018-03-13 JP JP2018046062A patent/JP7052441B2/ja active Active
-
2019
- 2019-01-25 US US16/258,494 patent/US10928263B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3114403B2 (ja) | 1992-12-22 | 2000-12-04 | 富士電機株式会社 | 半導体圧力センサ |
JP4444424B2 (ja) | 2000-01-21 | 2010-03-31 | 株式会社フジクラ | 半導体圧力センサ |
JP6044368B2 (ja) | 2013-01-31 | 2016-12-14 | 株式会社デンソー | 物理量センサ |
DE102014200126A1 (de) | 2014-01-08 | 2014-12-04 | Robert Bosch Gmbh | Bauteil mit einem Halbleiterbauelement auf einem Träger |
Also Published As
Publication number | Publication date |
---|---|
US10928263B2 (en) | 2021-02-23 |
JP2019158622A (ja) | 2019-09-19 |
US20190285498A1 (en) | 2019-09-19 |
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