JP7013374B2 - 接合体、回路基板、および半導体装置 - Google Patents
接合体、回路基板、および半導体装置 Download PDFInfo
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- JP7013374B2 JP7013374B2 JP2018530386A JP2018530386A JP7013374B2 JP 7013374 B2 JP7013374 B2 JP 7013374B2 JP 2018530386 A JP2018530386 A JP 2018530386A JP 2018530386 A JP2018530386 A JP 2018530386A JP 7013374 B2 JP7013374 B2 JP 7013374B2
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Description
セラミックス基板として、表1に示す窒化珪素基板を用意した。
Claims (10)
- セラミックス部材と、
接合層を介して前記セラミックス部材と接合された、厚さ0.3mm以上の銅板と、を具備し、
前記接合層は、接合ろう材を含み、
前記接合ろう材は、Agと、Cuと、Tiと、を含有するとともに、Sn、In、およびCからなる群から選ばれる少なくとも一つの元素をさらに含有し、
前記接合ろう材の前記Cuに対する前記Agの質量比は、2.1以下であり、
前記接合ろう材の前記Tiの含有量は、5質量%以上であり、
前記接合ろう材の前記Snおよび前記Inからなる群より選ばれる少なくとも一つの元素の含有量は、5質量%以上20質量%以下であり、
前記接合層は、Ag-Ti結晶を有し、
前記接合層のX線回折パターンの37.5度以上38.5度以下の範囲において、Ag結晶に起因する最大ピークに対する前記Ag-Ti結晶に起因する最大ピークの比は、0.5以上1.2以下であり、
前記接合層のナノインデンテーション硬さHITは、1.0GPa以上2.5GPa以下である、接合体。 - 前記セラミックス部材は、厚さ0.4mm以下の窒化珪素基板である、請求項1記載の接合体。
- 前記銅板の厚さは、0.7mm以上である、請求項1または請求項2に記載に記載の接合体。
- 前記銅板のビッカース硬さHVは、100以下である、請求項1ないし請求項3のいずれか一項に記載の接合体。
- 前記セラミックス部材の3点曲げ強度は、500MPa以上である、請求項1ないし請求項4のいずれか一項に記載の接合体。
- 前記接合層は、TiC結晶をさらに有する、請求項1ないし請求項5のいずれか一項に記載の接合体。
- 前記銅板は、前記銅板と前記接合層との界面から前記銅板の厚さ方向に100μm離れた領域を有し、
前記接合層のナノインデンテーション硬さHITと前記領域のナノインデンテーション硬さHITとの差は、0.5GPa以下である、請求項1ないし請求項6のいずれか一項に記載の接合体。 - 複数の前記銅板を具備する、請求項1ないし請求項7のいずれか一項に記載の接合体。
- 請求項1ないし請求項8のいずれか一項に記載の接合体を具備する、回路基板。
- 請求項9に記載の回路基板と、
前記銅板に搭載された半導体素子と、を具備する、半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2021153047A JP7155372B2 (ja) | 2016-07-28 | 2021-09-21 | 接合体の製造方法および回路基板の製造方法 |
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JP2016148105 | 2016-07-28 | ||
JP2016148105 | 2016-07-28 | ||
PCT/JP2017/027239 WO2018021472A1 (ja) | 2016-07-28 | 2017-07-27 | 接合体、回路基板、および半導体装置 |
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JP2021153047A Division JP7155372B2 (ja) | 2016-07-28 | 2021-09-21 | 接合体の製造方法および回路基板の製造方法 |
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JPWO2018021472A1 JPWO2018021472A1 (ja) | 2019-05-23 |
JP7013374B2 true JP7013374B2 (ja) | 2022-01-31 |
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JP2021153047A Active JP7155372B2 (ja) | 2016-07-28 | 2021-09-21 | 接合体の製造方法および回路基板の製造方法 |
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Country Status (4)
Country | Link |
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EP (1) | EP3492441A4 (ja) |
JP (2) | JP7013374B2 (ja) |
CN (2) | CN114478045B (ja) |
WO (1) | WO2018021472A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7052374B2 (ja) | 2017-02-06 | 2022-04-12 | 三菱マテリアル株式会社 | セラミックス/アルミニウム接合体の製造方法、絶縁回路基板の製造方法 |
KR102504621B1 (ko) * | 2017-05-30 | 2023-02-27 | 덴카 주식회사 | 세라믹스 회로 기판 및 그것을 사용한 모듈 |
WO2019088222A1 (ja) * | 2017-11-02 | 2019-05-09 | 三菱マテリアル株式会社 | 接合体、及び、絶縁回路基板 |
JP7230432B2 (ja) | 2017-11-02 | 2023-03-01 | 三菱マテリアル株式会社 | 接合体、及び、絶縁回路基板 |
EP3796761A4 (en) * | 2018-05-16 | 2022-01-26 | Kabushiki Kaisha Toshiba | CERAMIC COPPER CIRCUIT BOARD AND METHOD OF MANUFACTURE THEREOF |
EP4026819A4 (en) | 2019-09-02 | 2023-12-06 | Kabushiki Kaisha Toshiba | ASSEMBLED BODY, CIRCUIT BOARD AND SEMICONDUCTOR DEVICE |
JP6939973B2 (ja) * | 2019-12-19 | 2021-09-22 | 三菱マテリアル株式会社 | 銅/セラミックス接合体、及び、絶縁回路基板 |
EP4079711A4 (en) * | 2019-12-19 | 2024-02-28 | Mitsubishi Materials Corporation | COPPER/CERAMIC COMPOSITE BODY AND INSULATING CIRCUIT BOARD |
EP4108377A4 (en) * | 2020-02-17 | 2024-02-07 | Kabushiki Kaisha Toshiba | BRAZING BOND MATERIAL, BONDED BODY, CERAMIC CIRCUIT BOARD, AND METHOD FOR PRODUCING BONDED BODY |
JP7470181B2 (ja) | 2020-03-18 | 2024-04-17 | 株式会社東芝 | 接合体、セラミックス銅回路基板、接合体の製造方法、およびセラミックス銅回路基板の製造方法 |
EP4155281A4 (en) | 2020-05-20 | 2024-07-03 | Toshiba Kk | BONDED BODY, CERAMIC COPPER CIRCUIT SUBSTRATE AND SEMICONDUCTOR COMPONENT |
CN111885852A (zh) * | 2020-07-24 | 2020-11-03 | 深圳市环基实业有限公司 | 一种陶瓷覆铜板的制备方法 |
EP4191661A1 (en) | 2020-07-27 | 2023-06-07 | Kabushiki Kaisha Toshiba | Joined body, circuit board, semiconductor device, and method for manufacturing joined body |
EP4190764A1 (en) * | 2020-07-27 | 2023-06-07 | Kabushiki Kaisha Toshiba | Joining body, circuit substrate, semiconductor device, and method for manufacturing joining body |
WO2022075409A1 (ja) | 2020-10-07 | 2022-04-14 | 株式会社 東芝 | 接合体、セラミックス回路基板、および半導体装置 |
CN116018884A (zh) * | 2020-10-20 | 2023-04-25 | 株式会社东芝 | 接合体及采用其的陶瓷电路基板以及半导体装置 |
DE102020132808B4 (de) * | 2020-12-09 | 2023-03-09 | Schweizer Electronic Aktiengesellschaft | Leiterplattenmodul, Leiterplatte, Kühlkörper und Wärmeleitelement |
JP2022165046A (ja) * | 2021-04-19 | 2022-10-31 | 三菱マテリアル株式会社 | 銅/セラミックス接合体、および、絶縁回路基板 |
JP2023013629A (ja) * | 2021-07-16 | 2023-01-26 | 三菱マテリアル株式会社 | 銅/セラミックス接合体、および、絶縁回路基板 |
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WO2010137651A1 (ja) | 2009-05-27 | 2010-12-02 | 京セラ株式会社 | ろう材およびこれを用いた放熱基体ならびに電子装置 |
WO2011034075A1 (ja) | 2009-09-15 | 2011-03-24 | 株式会社 東芝 | セラミックス回路基板及びその製造方法 |
WO2013094213A1 (ja) | 2011-12-20 | 2013-06-27 | 株式会社 東芝 | セラミックス銅回路基板とそれを用いた半導体装置 |
WO2014054609A1 (ja) | 2012-10-04 | 2014-04-10 | 株式会社東芝 | 半導体回路基板およびそれを用いた半導体装置並びに半導体回路基板の製造方法 |
WO2017056360A1 (ja) | 2015-09-28 | 2017-04-06 | 株式会社 東芝 | 回路基板および半導体装置 |
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JP3834351B2 (ja) * | 1996-04-09 | 2006-10-18 | 株式会社東芝 | セラミックス回路基板 |
JP2000226272A (ja) * | 1998-11-30 | 2000-08-15 | Aichi Steel Works Ltd | セラミックス−金属接合体 |
JP4674983B2 (ja) * | 2001-03-13 | 2011-04-20 | 電気化学工業株式会社 | 接合体の製造方法 |
JP4812985B2 (ja) * | 2001-08-23 | 2011-11-09 | 電気化学工業株式会社 | セラミック体と銅板の接合方法 |
JP2003188310A (ja) * | 2001-12-18 | 2003-07-04 | Denki Kagaku Kogyo Kk | 電極端子付き回路基板の製造方法 |
CN104067386B (zh) * | 2012-02-01 | 2019-05-28 | 三菱综合材料株式会社 | 功率模块用基板的制造方法 |
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2017
- 2017-07-27 WO PCT/JP2017/027239 patent/WO2018021472A1/ja unknown
- 2017-07-27 CN CN202210120610.XA patent/CN114478045B/zh active Active
- 2017-07-27 EP EP17834474.3A patent/EP3492441A4/en active Pending
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CN114478045A (zh) | 2022-05-13 |
JP2022003010A (ja) | 2022-01-11 |
JPWO2018021472A1 (ja) | 2019-05-23 |
EP3492441A4 (en) | 2020-03-04 |
CN109476556A (zh) | 2019-03-15 |
WO2018021472A1 (ja) | 2018-02-01 |
CN109476556B (zh) | 2022-03-01 |
JP7155372B2 (ja) | 2022-10-18 |
EP3492441A1 (en) | 2019-06-05 |
CN114478045B (zh) | 2023-08-15 |
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