JP7003058B2 - 発光素子、発光素子パッケージおよび発光モジュール - Google Patents
発光素子、発光素子パッケージおよび発光モジュール Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 376
- 239000000203 mixture Substances 0.000 claims description 210
- 230000004888 barrier function Effects 0.000 claims description 177
- 229910052782 aluminium Inorganic materials 0.000 claims description 81
- 229910002704 AlGaN Inorganic materials 0.000 claims description 61
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 61
- 230000000903 blocking effect Effects 0.000 claims description 23
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 1010
- 239000002019 doping agent Substances 0.000 description 47
- 239000000758 substrate Substances 0.000 description 34
- 239000000463 material Substances 0.000 description 30
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 239000011295 pitch Substances 0.000 description 22
- 230000007547 defect Effects 0.000 description 21
- 150000004767 nitrides Chemical class 0.000 description 21
- 238000000034 method Methods 0.000 description 18
- 239000000126 substance Substances 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000001126 phototherapy Methods 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000011787 zinc oxide Substances 0.000 description 13
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000017525 heat dissipation Effects 0.000 description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 10
- 230000007423 decrease Effects 0.000 description 10
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 8
- 229960001296 zinc oxide Drugs 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000001451 molecular beam epitaxy Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 229910052711 selenium Inorganic materials 0.000 description 6
- 229910052714 tellurium Inorganic materials 0.000 description 6
- 230000001225 therapeutic effect Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- -1 AlInGaAs Inorganic materials 0.000 description 5
- 206010003645 Atopy Diseases 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 102000004169 proteins and genes Human genes 0.000 description 4
- 108090000623 proteins and genes Proteins 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 241000408495 Iton Species 0.000 description 3
- 229910019897 RuOx Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000006089 photosensitive glass Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241001101998 Galium Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Description
Claims (4)
- AlNテンプレート層;
前記AlNテンプレート層の上に配置された第1超格子層;
前記第1超格子層の上に配置された第2超格子層;
前記第1超格子層と前記第2超格子層との間に配置された第1半導体層;
前記第2超格子層の上に配置された第1導電型半導体層;
前記第1導電型半導体層の上に配置され、量子井戸層および量子壁層を有する活性層;
前記活性層の上に配置された電子ブロッキング層;および
前記電子ブロッキング層の上に配置された第2導電型半導体層を含み、
前記第1超格子層は、AlN半導体を有する第1層およびAlGaN系半導体を有する第2層を含み、
前記第1半導体層は、AlGaN系半導体を含み、
前記第2超格子層は、AlGaN系半導体を有する第3層およびAlGaN系半導体を有する第4層を含み、
前記第1超格子層は、前記第1層と前記第2層が交番して配置され、
前記第2超格子層は、前記第3層と前記第4層が交番して配置され、
前記第3層のアルミニウム組成は、前記第4層のアルミニウム組成より高く、
前記第1半導体層のアルミニウム(Al)の組成は、ガリウム(Ga)の組成以上であり、前記ガリウムの組成との差が10%以下であり、
前記第2層のアルミニウム(Al)の組成は、ガリウム(Ga)の組成以上であり、前記ガリウムの組成との差が10%以下であり、
前記第3層のアルミニウム(Al)の組成は、ガリウム(Ga)の組成以上であり、前記ガリウムの組成との差が10%以下であり、
前記第1半導体層は、前記第1超格子層の第1層および第2層を有する単一ペアの厚さより厚い厚さを有し、
前記活性層の量子井戸層は、AlGaN系半導体で形成され、
前記量子壁層は、AlGaN系半導体で形成され、
前記量子壁層のアルミニウム組成は、前記量子井戸層のアルミニウム組成より20%以上高く、
前記活性層は、295nmないし315nmの紫外線光を放出し、
前記量子井戸層の厚さは、前記量子壁層の厚さの25%以下の厚さを有し、
前記電子ブロッキング層は、複数のバリア層および複数のウェル層を含み、
前記複数のバリア層は、AlGaN系半導体を含み、
前記複数のウェル層は、AlGaN系半導体を含み、
前記複数のバリア層それぞれは、前記複数のウェル層それぞれのアルミニウム組成より高いアルミニウム組成を有し、
前記複数のバリア層それぞれは、前記活性層の量子壁層のアルミニウム組成より高いアルミニウム組成を有し、
前記複数のウェル層それぞれは、前記活性層の量子壁層のアルミニウム組成より低いアルミニウム組成を有し、
前記複数のバリア層は、前記活性層の上に第1バリア層および前記第2導電型半導体層の下に第2バリア層を含み、
前記複数のウェル層は、前記第1、2バリア層の間に配置され、
前記複数のバリア層は、前記第1、2バリア層と前記ウェル層との間に配置された複数の中間バリア層を含み、
前記中間バリア層それぞれのアルミニウム組成は、前記第1、2バリア層のアルミニウム組成より高い、発光素子。 - 前記第1半導体層、前記第2層および第3層は、AlxGa1-xN(0.5≦x≦0.55)の組成式を有し、
前記第4層は、AlbGa1-bN(0.45≦b≦0.55)の組成式を有し、
前記第1導電型半導体層は、AlzGa1-zN(0.45≦z≦0.55)の組成式を有する、請求項1に記載の発光素子。 - 前記第1超格子層、前記第1半導体層、前記第2超格子層および前記第1導電型半導体層において、アルミニウムの組成は前記活性層に隣接する層であるほどさらに低く、
前記活性層から放出された紫外線光は、17nm以下のFWHM(Full Width at Half Maximum)を有する、請求項1または請求項2に記載の発光素子。 - 前記第1バリア層は、AlpGa1-pN(0.50≦p≦0.74)の組成式を有し、
前記第2バリア層は、AlqGa1-qN(0.50≦q≦0.74)の組成式を有し、
前記中間バリア層は、AlrGa1-rN(0.55≦r≦0.74)の組成式を有し、
前記第1バリア層、前記第2バリア層および前記中間バリア層それぞれは、前記ウェル層の厚さより厚く、3nmないし10nmの厚さを有し、
前記第2導電型半導体層の表面粗さは、1nm以下であり、
前記複数のウェル層は、前記第1バリア層と前記中間バリア層との間に配置された第1ウェル層、前記中間バリア層の間に配置された第2ウェル層および前記中間バリア層と前記第2バリア層との間の第3ウェル層を含み、
前記第1ウェル層は、AleGa1-eN(0.24≦e≦0.45)の組成式を有し、
前記第2ウェル層は、AlfGa1-fN(0.24≦f≦0.48)の組成式を有し、
前記第3ウェル層は、AlgGa1-gN(0.24≦g≦0.48)の組成式を有し、
前記第2導電型半導体層は、前記電子ブロッキング層の上に第1伝導性半導体層および前記第1伝導性半導体層の上に第2伝導性半導体層を含み、
前記第1伝導性半導体層は、AlsGa1-sN(0.20≦s≦0.45)の組成式を有する、請求項1から3のいずれか一項に記載の発光素子。
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