JP7001211B1 - Icモジュール及びicモジュールの製造方法 - Google Patents
Icモジュール及びicモジュールの製造方法 Download PDFInfo
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- JP7001211B1 JP7001211B1 JP2021556524A JP2021556524A JP7001211B1 JP 7001211 B1 JP7001211 B1 JP 7001211B1 JP 2021556524 A JP2021556524 A JP 2021556524A JP 2021556524 A JP2021556524 A JP 2021556524A JP 7001211 B1 JP7001211 B1 JP 7001211B1
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Abstract
Description
図1は第1の実施形態に係るICモジュール101の断面図である。図2、図3、図4は、そのICモジュール101の製造時の各工程でのICモジュールの断面構造を示す図である。図5はICモジュール101の製造方法の手順を示すフローチャートである。なお、図3は図2に示す工程の代替例である。実際には集合基板により多数のICモジュールを一括処理により製造し、最後に分割することで個別のICモジュールを得るが、図2、図3、図4では説明の都合上、単一のICモジュール部分について図示している。
第2の実施形態では、絶縁体層の開口内にICをはんだ付けしたICモジュールについて例示する。
第3の実施形態では、RFIDタグ用RFICモジュール及びそれを備えるRFIDタグについて例示する。
L1,L2,L3,L4…インダクタ
MS1…第1面
MS2…第2面
1…基板
2…IC
3…絶縁体層
3S…絶縁体シート
7…アンテナ基板
11…導体パターン
12…ランド
13…入出力端子
14…層間接続導体
15…レジスト膜
16…はんだ
16P…はんだペースト
17…異方性導電体層
17P…異方性導電ペースト
21…端子電極
22…フラックス
31…接着剤層
71…アンテナ導体パターン
71P,71L,71C…アンテナ導体
72…はんだ
101,102…ICモジュール
103…RFIDタグ用RFICモジュール
203…RFIDタグ
Claims (4)
- 端子電極を有するICと、互いに対向する第1面及び第2面を有して前記第1面に前記ICの端子電極が接続されるランドが形成された基板と、を備えるICモジュールであって、
前記基板の前記第1面の前記ランドの形成領域外を被覆する絶縁体層、を備え、
前記絶縁体層の厚みと前記ICの厚みとの差は、前記絶縁体層の厚みと前記基板の厚みとの差より小さく、
前記基板の厚みは前記絶縁体層の厚みより薄い、
ICモジュール。 - 前記ICの厚みは前記絶縁体層の厚みより厚く、前記ICの端子電極は前記ランドに対して、加圧及び加熱によって電気的に接続される異方性導電材料で接続されている、
請求項1に記載のICモジュール。 - 端子電極を有するICと、互いに対向する第1面及び第2面を有して前記第1面に前記ICの端子電極が接続されるランドが形成された基板と、当該基板の前記第1面の前記ランドの形成領域外を被覆する絶縁体層と、を備えるICモジュールの製造方法であって、
前記絶縁体層の材料からなり、前記ICに比べて厚みが薄い絶縁体シートであり、前記絶縁体シートの厚みと前記ICの厚みとの差が、前記絶縁体シートの厚みと前記基板の厚みとの差より小さい関係にある当該絶縁体シートに対して、前記ランドに対向する位置に開口を形成する絶縁体シート加工工程と、
前記絶縁体層に比べて厚みが薄い前記基板の前記第1面に前記絶縁体シートを接着して前記絶縁体シートによる前記絶縁体層を形成する絶縁体層形成工程と、
前記絶縁体層の前記開口内に、加圧及び加熱によって電気的に接続される異方性導電ペーストを形成する異方性導電ペースト形成工程と、
前記異方性導電ペースト形成工程より後に、前記基板に対して前記ICを加圧・加熱する、加圧・加熱工程と、
を備える、ICモジュールの製造方法。 - 端子電極を有するICと、互いに対向する第1面及び第2面を有して前記第1面に前記ICの端子電極が接続されるランドが形成された基板と、当該基板の前記第1面の前記ランドの形成領域外を被覆する絶縁体層と、を備えるICモジュールの製造方法であって、
前記絶縁体層の材料からなる絶縁体シートであり、前記絶縁体シートの厚みと前記ICの厚みとの差が、前記絶縁体シートの厚みと前記基板の厚みとの差より小さい関係にある当該絶縁体シートに対して、前記ランドに対向する位置に開口を形成する絶縁体シート加工工程と、
前記絶縁体層に比べて厚みが薄い前記基板の前記第1面に前記絶縁体シートを接着して前記絶縁体シートによる前記絶縁体層を形成する絶縁体層形成工程と、
前記絶縁体層の前記開口内にはんだペーストを印刷するはんだペースト印刷工程と、
前記はんだペースト印刷工程より後に、前記絶縁体層が形成された前記基板をリフローソルダリングすることにより、前記ランドをはんだ付きランドにする第1リフロー工程と、
前記ICの端子電極にフラックスを塗布し、当該ICを前記はんだ付きランドに搭載するIC搭載工程と、
前記ICが搭載された前記基板をリフローソルダリングすることにより、前記ランドに前記ICをはんだ付けする第2リフロー工程と、
を備える、ICモジュールの製造方法。
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US20130277831A1 (en) * | 2012-04-19 | 2013-10-24 | Samsung Electronics Co., Ltd. | Semiconductor package and method of fabricating the same |
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