JP7000882B2 - 酸窒化物薄膜および容量素子 - Google Patents

酸窒化物薄膜および容量素子 Download PDF

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Publication number
JP7000882B2
JP7000882B2 JP2018013705A JP2018013705A JP7000882B2 JP 7000882 B2 JP7000882 B2 JP 7000882B2 JP 2018013705 A JP2018013705 A JP 2018013705A JP 2018013705 A JP2018013705 A JP 2018013705A JP 7000882 B2 JP7000882 B2 JP 7000882B2
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thin film
dielectric thin
film
dielectric
nitrogen
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Japanese (ja)
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JP2018174303A (ja
Inventor
豪 芝原
佑起 永峰
久美子 山▲崎▼
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TDK Corp
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TDK Corp
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Priority to US15/938,344 priority Critical patent/US10479732B2/en
Priority to EP18165009.4A priority patent/EP3382726A1/en
Priority to TW107111243A priority patent/TWI672283B/zh
Priority to CN201810293209.XA priority patent/CN108695063B/zh
Priority to KR1020180037294A priority patent/KR102096555B1/ko
Publication of JP2018174303A publication Critical patent/JP2018174303A/ja
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Publication of JP7000882B2 publication Critical patent/JP7000882B2/ja
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JP2018013705A 2017-03-31 2018-01-30 酸窒化物薄膜および容量素子 Active JP7000882B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US15/938,344 US10479732B2 (en) 2017-03-31 2018-03-28 Oxynitride thin film and capacitance element
EP18165009.4A EP3382726A1 (en) 2017-03-31 2018-03-29 Oxynitride thin film and capacitance element
TW107111243A TWI672283B (zh) 2017-03-31 2018-03-30 氮氧化物薄膜與電容元件
CN201810293209.XA CN108695063B (zh) 2017-03-31 2018-03-30 氧氮化物薄膜及电容元件
KR1020180037294A KR102096555B1 (ko) 2017-03-31 2018-03-30 산질화물 박막 및 용량 소자

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017071128 2017-03-31
JP2017071128 2017-03-31

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JP2018174303A JP2018174303A (ja) 2018-11-08
JP7000882B2 true JP7000882B2 (ja) 2022-01-19

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JP (1) JP7000882B2 (zh)
TW (1) TWI672283B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7192383B2 (ja) * 2017-11-10 2022-12-20 Tdk株式会社 金属酸窒化物薄膜および金属酸窒化物薄膜の製造方法、並びに、容量素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000133779A (ja) 1998-10-28 2000-05-12 Nec Corp キャパシタ構造及びその製造方法
JP2013128073A (ja) 2011-12-19 2013-06-27 Canon Inc 圧電材料、圧電素子、液体吐出ヘッド、超音波モータおよび塵埃除去装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009539237A (ja) * 2006-06-02 2009-11-12 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 新規なチタン、ジルコニウムおよびハフニウム前駆体をベースとするｈｉｇｈ−ｋ誘電体フィルムを形成する方法および半導体製造におけるそれらの使用

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000133779A (ja) 1998-10-28 2000-05-12 Nec Corp キャパシタ構造及びその製造方法
JP2013128073A (ja) 2011-12-19 2013-06-27 Canon Inc 圧電材料、圧電素子、液体吐出ヘッド、超音波モータおよび塵埃除去装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
C. Le Paven，外７名，"Growth of (Sr,La)-(Ta,Ti)-O-N perovskite oxide and oxynitride films by radio frequency magnetron sputtering: Influence of the reactive atmosphere on the film structure"，Journal of Crystal Growth，2015年03月01日，Volume 413，pp. 5-11

Also Published As

Publication number Publication date
TWI672283B (zh) 2019-09-21
JP2018174303A (ja) 2018-11-08
TW201838956A (zh) 2018-11-01

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