JP6997033B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP6997033B2 JP6997033B2 JP2018082685A JP2018082685A JP6997033B2 JP 6997033 B2 JP6997033 B2 JP 6997033B2 JP 2018082685 A JP2018082685 A JP 2018082685A JP 2018082685 A JP2018082685 A JP 2018082685A JP 6997033 B2 JP6997033 B2 JP 6997033B2
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Description
以下に、第1実施形態に係る半導体装置の構成を説明する。
図4に示されるように、第1実施形態に係る半導体装置の製造方法は、第1イオン注入工程S1と、ハードマスク形成工程S2と、フォトレジスト形成工程S3と、第2イオン注入工程S4と、絶縁分離膜形成工程S5とを有している。第1実施形態に係る半導体装置の製造方法は、さらに、ゲート絶縁膜形成工程S6と、ゲート電極形成工程S7と、第3イオン注入工程S8と、サイドウォールスペーサ形成工程S9と、第4イオン注入工程S10と、シリサイド膜形成工程S11とを有している。
第2実施形態に係る半導体装置の構成は、第1実施形態に係る半導体装置の構成と同一であるため、説明は省略する。
第3実施形態に係る半導体装置の構成は、第1実施形態に係る半導体装置の構成と同一であるため、説明は省略する。
以下に、第3実施形態の第1変形例に係る半導体装置の構成を説明する。以下においては、第3実施形態に係る半導体装置の構成と異なる点を主に説明し、重複する説明は繰り返さないものとする。
以下に、第3実施形態の第2変形例に係る半導体装置の構成を説明する。以下においては、第3実施形態に係る半導体装置の構成と異なる点を主に説明し、重複する説明は繰り返さないものとする。
Claims (9)
- 半導体基板の第1面にドリフト領域を形成する工程と、
前記第1面に配置される第1部分と、前記第1部分及び前記ドリフト領域を取り囲むように前記第1面に配置される第2部分とを有するボディ領域を形成する工程と、
前記ドリフト領域上に開口を有するハードマスクを前記第1面上に形成する工程と、
前記ハードマスクを用いたイオン注入で逆導電型領域を前記第1面に形成する工程と、
前記ハードマスクを用いた異方性エッチングで前記第1面に溝を形成する工程と、
前記溝に絶縁分離膜を埋め込む工程と、
前記ボディ領域に取り囲まれるように前記第1面にソース領域を形成する工程と、
前記ドリフト領域に取り囲まれるように前記第1面にドレイン領域を形成する工程とを備え、
前記イオン注入は、前記開口の前記第1部分側に位置する前記ハードマスクの第1縁部の下方にイオンが注入されるように前記第1面に対して傾斜して行われ、
前記ボディ領域及び前記逆導電型領域の導電型は、前記ソース領域、前記ドレイン領域及び前記ドリフト領域とは反対の導電型である、半導体装置の製造方法。 - 前記逆導電型領域を形成する工程の前に、前記開口に対して前記第1縁部と反対側に位置する前記ハードマスクの第2縁部を覆うフォトレジストを形成する工程をさらに備え、
前記逆導電型領域は、平面視において前記ドレイン領域を取り囲み、
前記ソース領域は、平面視において前記逆導電型領域を取り囲み、
前記イオン注入は、平面視において第1方向に沿って行われる第1イオン注入と、平面視において前記第1方向と直交する第2方向に沿って行われる第2イオン注入と、平面視において前記第1方向の逆方向である第3方向に沿って行われる第3イオン注入と、前記第2方向の逆方向である第4方向に沿って行われる第4イオン注入とにより行われ、
前記第1方向、前記第2方向、前記第3方向及び前記第4方向は、平面視における前記ドレイン領域の延在方向とは異なる、請求項1に記載の半導体装置の製造方法。 - 前記逆導電型領域を形成する工程は、溝を形成する工程の前に行われる、請求項1に記載の半導体装置の製造方法。
- 前記逆導電型領域を形成する工程は、前記絶縁分離膜を形成する工程の後に行われる、
請求項1に記載の半導体装置の製造方法。 - 前記逆導電型領域を形成する工程は、前記溝を形成する工程の後であって、前記絶縁分離膜を埋め込む工程の前に行われる、請求項1に記載の半導体装置の製造方法。
- 前記逆導電型領域のチャネル長方向における幅は前記絶縁分離膜の深さよりも小さい、請求項1に記載の半導体装置の製造方法。
- 前記幅は前記深さの0.5倍以上である、請求項6に記載の半導体装置の製造方法。
- 第1面を有する半導体基板を準備する工程と、
前記第1面にドリフト領域を形成する工程と、
前記第1面に配置される第1部分と、前記第1部分及び前記ドリフト領域を取り囲むように前記第1面に配置される第2部分とを有するボディ領域を形成する工程と、
前記ドリフト領域上に開口を有するハードマスクを前記第1面上に形成する工程と、
前記ハードマスクを用いた異方性エッチングで前記第1面に溝を形成する工程と、
前記ハードマスクを用いたイオン注入で前記溝の側面及び底面に逆導電型領域を形成する工程と、
前記溝に絶縁分離膜を埋め込む工程と、
前記ボディ領域に取り囲まれるように前記第1面にソース領域を形成する工程と、
前記ドリフト領域に取り囲まれるように前記第1面にドレイン領域を形成する工程とを備え、
前記イオン注入は、前記側面及び前記底面にイオンが注入されるように前記第1面に対して傾斜して行われ、
前記ボディ領域及び前記逆導電型領域の導電型は、前記ソース領域、前記ドレイン領域及び前記ドリフト領域とは反対の導電型である、半導体装置の製造方法。 - 第1面を有する半導体基板を準備する工程と、
前記第1面に、第1ドリフト領域と、第2ドリフト領域とを形成する工程と、
前記第1面に配置される第1部分と、前記第1部分及び前記第1ドリフト領域を取り囲むように前記第1面に配置される第2部分とを有する第1ボディ領域と、前記第1面に配置される第3部分と、前記第3部分及び前記第2ドリフト領域を取り囲むように前記第1面に配置される第4部分とを有する第2ボディ領域とを形成する工程と、
前記第1ドリフト領域上に第1開口を有するとともに、前記第2ドリフト領域上に第2開口を有するハードマスクを前記第1面上に形成する工程と、
前記ハードマスクを用いた異方性エッチングで前記第1面に第1溝及び第2溝を形成する工程と、
フォトレジストを形成する工程と、
前記ハードマスク及び前記フォトレジストを用いたイオン注入で、前記第1開口の前記第1部分側に位置する前記ハードマスクの第1縁部の下方に第1逆導電型領域を形成するとともに、前記第2溝の底面及び側面に第2逆導電型領域を形成する工程と、
前記第1溝に第1絶縁分離膜を埋め込むとともに、前記第2溝に第2絶縁分離膜を埋め込む工程と、
前記第1ボディ領域に取り囲まれるように前記第1面に第1ソース領域を形成するとともに、前記第2ボディ領域に取り囲まれるように前記第1面に第2ソース領域を形成する工程と、
前記第1ドリフト領域に取り囲まれるように前記第1面に第1ドレイン領域を形成するとともに、前記第2ドリフト領域に取り囲まれるように前記第1面に第2ドレイン領域を形成する工程とを備え、
前記フォトレジストは、前記第1開口に対して前記第1縁部と反対側に位置する前記ハードマスクの第2縁部を覆うように形成され、
前記イオン注入は、前記第1縁部の下方にイオンが注入されるとともに、前記側面及び前記底面にイオンが注入されるように、前記第1面に対して傾斜して行われ、
前記第1ボディ領域、前記第2ボディ領域、前記第1逆導電型領域及び前記第2逆導電型領域の導電型は、前記第1ソース領域、前記第2ソース領域、前記第1ドレイン領域、前記第2ドレイン領域、前記第1ドリフト領域及び前記第2ドリフト領域とは反対の導電型である、半導体装置の製造方法。
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