JP6983569B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP6983569B2 JP6983569B2 JP2017148960A JP2017148960A JP6983569B2 JP 6983569 B2 JP6983569 B2 JP 6983569B2 JP 2017148960 A JP2017148960 A JP 2017148960A JP 2017148960 A JP2017148960 A JP 2017148960A JP 6983569 B2 JP6983569 B2 JP 6983569B2
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Description
本実施の形態では、本発明の一態様の剥離方法及び表示装置の作製方法について図1〜17を用いて説明する。
まず、作製基板14上に、第1の層24aを形成する(図1(A))。
以降の作製方法例では、先に説明した作製方法例と同様の部分について、説明を省略することがある。
図7(A)は、表示装置10Aの上面図である。図7(B)、(C)は、それぞれ、表示装置10Aの表示部381の断面図及びFPC372との接続部の断面図の一例である。
作製方法例2では、第1の樹脂層23aと第2の樹脂層23bを形成する例を示したが、絶縁層31と作製基板14との密着性の高さによっては、第2の樹脂層23bは設けなくてもよい。
まず、作製方法例2と同様に、作製基板14上に、第1の樹脂層23aから絶縁層31までを形成する(図9(A))。
作製方法例4(図10(C))では、接着層99が、作製基板14と第2の樹脂層23bとが接している部分、及び作製基板91と第2の樹脂層93bとが接している部分の双方と重ねて設けられる場合を示した。
図17(A)は、表示装置10Bの上面図である。図17(B)は、表示装置10Bの表示部381の断面図及びFPC372との接続部の断面図の一例である。
本実施の形態では、本発明の一態様の表示装置とその作製方法について図面を用いて説明する。
図18は、表示装置300Aの斜視概略図である。表示装置300Aは、基板351と基板361とが貼り合わされた構成を有する。図18では、基板361を破線で明示している。
図20に、表示装置300Bの表示部の断面図を示す。
次に、図21〜図23を用いて、本実施の形態の表示装置の作製方法について、具体的に説明する。以下では、図19に示す表示装置300Aの作製方法の一例について説明する。図21〜図23では特に表示装置300Aの表示部362に着目して、作製方法を説明する。なお、図21〜図23ではトランジスタ203の図示を省略する。
次に、図24〜図26を用いて、本実施の形態の表示装置の作製方法について、具体的に説明する。以下では、図20に示す表示装置300Bの作製方法の一例について説明する。なお、表示装置300Aの作製方法例と同様の部分については、説明を省略することがある。
本実施の形態では、実施の形態2で説明した表示装置の、より具体的な構成例について図27〜図29を用いて説明する。
本実施の形態では、本発明の一態様で開示されるトランジスタに用いることができるCAC(Cloud−Aligned Composite)−OSの構成について説明する。
本実施の形態では、本発明の一態様の表示モジュール及び電子機器について説明する。
10B 表示装置
13 接着層
14 作製基板
22 基板
23a 第1の樹脂層
23b 第2の樹脂層
24a 第1の層
24b 第2の層
28 接着層
29 基板
31 絶縁層
32 絶縁層
33 絶縁層
34 絶縁層
35 絶縁層
39 マスク
40 トランジスタ
41 導電層
43a 導電層
43b 導電層
43c 導電層
44 金属酸化物層
45 導電層
49 トランジスタ
60 発光素子
61 導電層
62 EL層
63 導電層
64 切れ目
65 器具
66 レーザ光
67 照射領域
74 絶縁層
75 保護層
75a 基板
75b 接着層
76 接続体
80 トランジスタ
81 導電層
82 絶縁層
83 金属酸化物層
84 絶縁層
85 導電層
86a 導電層
86b 導電層
86c 導電層
91 作製基板
93a 第1の樹脂層
93b 第2の樹脂層
95 絶縁層
96 隔壁
97 着色層
98 遮光層
99 接着層
112 液晶層
113 電極
117 絶縁層
121 絶縁層
131 着色層
132 遮光層
133a 配向膜
133b 配向膜
134 着色層
135 偏光板
141 接着層
142 接着層
170 発光素子
180 液晶素子
191 電極
192 EL層
193 電極
194 絶縁層
201 トランジスタ
203 トランジスタ
204 接続部
205 トランジスタ
206 トランジスタ
207 接続部
211 絶縁層
212 絶縁層
213 絶縁層
214 絶縁層
216 絶縁層
220 絶縁層
221a 導電層
221b 導電層
222a 導電層
222b 導電層
223 導電層
231 半導体層
242 接続層
243 接続体
252 接続部
300A 表示装置
300B 表示装置
311 電極
311a 電極
311b 電極
340 液晶素子
351 基板
360 発光素子
360b 発光素子
360g 発光素子
360r 発光素子
360w 発光素子
361 基板
362 表示部
364 回路
365 配線
372 FPC
373 IC
381 表示部
382 駆動回路部
400 表示装置
410 画素
451 開口
800 携帯情報端末
801 筐体
802 筐体
803 表示部
804 表示部
805 ヒンジ部
810 携帯情報端末
811 筐体
812 表示部
813 操作ボタン
814 外部接続ポート
815 スピーカ
816 マイク
817 カメラ
820 カメラ
821 筐体
822 表示部
823 操作ボタン
824 シャッターボタン
826 レンズ
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8009 フレーム
8010 プリント基板
8011 バッテリ
9000 筐体
9001 表示部
9003 スピーカ
9005 操作キー
9006 接続端子
9007 センサ
9008 マイクロフォン
9055 ヒンジ
9200 携帯情報端末
9201 携帯情報端末
9202 携帯情報端末
Claims (10)
- 基板上に、樹脂または樹脂前駆体を含む材料を用いて、第1の層を形成し、
前記第1の層に対して、酸素を含む雰囲気下で第1の加熱処理を行うことで、オキシジフタル酸の残基を有する第1の樹脂層を形成し、
前記第1の樹脂層上に、被剥離層を形成し、
前記被剥離層と前記基板とを分離し、
前記第1の加熱処理の後に、前記第1の樹脂層上にマスクを形成し、エッチングすることで、島状の前記第1の樹脂層を形成し、
前記被剥離層を形成する工程では、前記基板上及び前記第1の樹脂層上に、前記第1の樹脂層の端部を覆う絶縁層を形成し、前記第1の樹脂層上に、前記絶縁層を介して、チャネル形成領域に金属酸化物を有するトランジスタを形成し、
前記被剥離層と前記基板とを分離する前に、前記第1の樹脂層の少なくとも一部を前記基板から分離することで、分離の起点を形成する、半導体装置の作製方法。 - 基板上に、樹脂または樹脂前駆体を含む材料を用いて、第1の層を形成し、
前記第1の層に対して、酸素を含む雰囲気下で第1の加熱処理を行うことで、オキシジフタル酸の残基を有する第1の樹脂層を形成し、
前記第1の樹脂層上にマスクを形成し、エッチングすることで、島状の前記第1の樹脂層を形成し、
前記基板上及び前記第1の樹脂層上に、前記第1の樹脂層の端部を覆う第2の層を形成し、
前記第2の層に対して、前記第1の加熱処理の雰囲気よりも酸素の少ない雰囲気下で第2の加熱処理を行うことで、前記第1の樹脂層の端部を覆う第2の樹脂層を形成し、
前記第1の樹脂層上に、前記第2の樹脂層を介して、チャネル形成領域に金属酸化物を有するトランジスタを形成し、
前記第1の樹脂層の少なくとも一部を前記基板から分離することで、分離の起点を形成し、
前記トランジスタと前記基板とを分離する、半導体装置の作製方法。 - 請求項2において、
前記第1の加熱処理で、酸素を含むガスを流し、
前記第2の加熱処理で、酸素を含むガスを流さない、または前記第1の加熱処理で用いるガスよりも酸素を含む割合が低いガスを流す、半導体装置の作製方法。 - 請求項2または3において、
前記第2の樹脂層は、オキシジフタル酸の残基を有する、半導体装置の作製方法。 - 請求項1乃至4のいずれか一において、
前記第1の樹脂層は、オキシジフタル酸またはオキシジフタル酸誘導体を含む酸成分と、芳香族アミンまたは芳香族アミン誘導体を含むアミン成分と、を用いて得られるポリイミド樹脂を有する、半導体装置の作製方法。 - 請求項1乃至5のいずれか一において、
前記第1の加熱処理は、350℃以上450℃以下で行い、
前記第1の加熱処理で、窒素と酸素を含む混合ガスを流す、半導体装置の作製方法。 - 請求項1乃至6のいずれか一において、
厚さが1μm以上3μm以下となるように、前記第1の樹脂層を形成する、半導体装置の作製方法。 - 請求項1乃至7のいずれか一において、
スピンコータを用いて、前記第1の層を形成する、半導体装置の作製方法。 - 請求項1乃至8のいずれか一において、
前記第1の加熱処理の温度以下の温度で、前記トランジスタを作製する、半導体装置の作製方法。 - 請求項1乃至9のいずれか一において、
前記材料は、非感光性の材料である、半導体装置の作製方法。
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