JP6954208B2 - 薄膜キャパシタ - Google Patents
薄膜キャパシタ Download PDFInfo
- Publication number
- JP6954208B2 JP6954208B2 JP2018067038A JP2018067038A JP6954208B2 JP 6954208 B2 JP6954208 B2 JP 6954208B2 JP 2018067038 A JP2018067038 A JP 2018067038A JP 2018067038 A JP2018067038 A JP 2018067038A JP 6954208 B2 JP6954208 B2 JP 6954208B2
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- JP
- Japan
- Prior art keywords
- layer
- barrier layer
- cte3
- linear expansion
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003990 capacitor Substances 0.000 title claims description 40
- 239000010409 thin film Substances 0.000 title claims description 39
- 230000004888 barrier function Effects 0.000 claims description 128
- 239000000463 material Substances 0.000 claims description 62
- 101150091203 Acot1 gene Proteins 0.000 claims description 52
- 102100025854 Acyl-coenzyme A thioesterase 1 Human genes 0.000 claims description 52
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 360
- 239000010408 film Substances 0.000 description 29
- 238000007654 immersion Methods 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 25
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 14
- 239000002356 single layer Substances 0.000 description 13
- 239000011888 foil Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Description
Claims (4)
- 基材と、
前記基材の主面上に設けられ、前記主面の法線方向に沿って複数の電極層と複数の誘電体層とが交互に積層された容量部と、
無機絶縁材料で構成されており、前記容量部の側面と前記基材の主面とを連続的に覆い、かつ、前記容量部の側面と直接接する第1層を含むバリア層と
を備え、
前記基材の線膨張係数をCTE1、前記容量部の線膨張係数をCTE2、前記バリア層の第1層の線膨張係数をCTE3としたときに、CTE1>CTE2>CTE3の関係を満たす、薄膜キャパシタ。 - 前記バリア層の第1層が、前記容量部の側面および前記基材の主面と直接接しており、
CTE3/CTE1、および、CTE3/CTE2が、いずれも0.3より大きい、請求項1に記載の薄膜キャパシタ。 - 前記バリア層が複数の層で構成されており、かつ、前記バリア層を構成する複数の層のうちの隣接する2層では前記容量部に近い方の内層の線膨張係数が前記容量部から離れた方の外層の線膨張係数より高く、
前記基材の線膨張係数に対する前記バリア層を構成する各層の線膨張係数の割合、および、前記容量部の線膨張係数に対する前記バリア層を構成する各層の線膨張係数の割合が、いずれも0.3より大きい、請求項1または2に記載の薄膜キャパシタ。 - 前記バリア層が複数の層で構成されており、かつ、前記バリア層を構成する複数の層の隣接する2層のうちの前記容量部から離れた方の外層の線膨張係数をCTE3’とし、前記容量部に近い方の内層の線膨張係数をCTE3’’としたとき、CTE3’/CTE1およびCTE3’/CTE2が0.3以下であり、前記外層の厚さが前記内層の厚さの半分未満であり、CTE3’/CTE3’’が0.3より大きい、請求項1または2に記載の薄膜キャパシタ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018067038A JP6954208B2 (ja) | 2018-03-30 | 2018-03-30 | 薄膜キャパシタ |
US16/360,405 US10950389B2 (en) | 2018-03-30 | 2019-03-21 | Thin-film capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018067038A JP6954208B2 (ja) | 2018-03-30 | 2018-03-30 | 薄膜キャパシタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019179794A JP2019179794A (ja) | 2019-10-17 |
JP6954208B2 true JP6954208B2 (ja) | 2021-10-27 |
Family
ID=68055465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018067038A Active JP6954208B2 (ja) | 2018-03-30 | 2018-03-30 | 薄膜キャパシタ |
Country Status (2)
Country | Link |
---|---|
US (1) | US10950389B2 (ja) |
JP (1) | JP6954208B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7056290B2 (ja) * | 2018-03-23 | 2022-04-19 | Tdk株式会社 | 薄膜キャパシタ、及び薄膜キャパシタの製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7161793B2 (en) | 2002-11-14 | 2007-01-09 | Fujitsu Limited | Layer capacitor element and production process as well as electronic device |
JP3966208B2 (ja) * | 2002-11-14 | 2007-08-29 | 富士通株式会社 | 薄膜キャパシタおよびその製造方法 |
US20060022304A1 (en) * | 2004-07-29 | 2006-02-02 | Rohm And Haas Electronic Materials Llc | Dielectric structure |
JP4525947B2 (ja) | 2005-04-27 | 2010-08-18 | 株式会社村田製作所 | 薄膜キャパシタの製造方法 |
JP4956947B2 (ja) * | 2005-09-16 | 2012-06-20 | 株式会社村田製作所 | 薄膜キャパシタ |
JP2007142089A (ja) * | 2005-11-17 | 2007-06-07 | Ngk Spark Plug Co Ltd | 誘電体積層構造体とその製造方法、及びコンデンサ |
JPWO2010137667A1 (ja) * | 2009-05-28 | 2012-11-15 | 旭硝子株式会社 | 封着材料層付きガラス部材とそれを用いた電子デバイスおよびその製造方法 |
WO2011010638A1 (ja) * | 2009-07-22 | 2011-01-27 | 株式会社村田製作所 | 誘電体薄膜素子及びその製造方法 |
US9030800B2 (en) * | 2012-03-29 | 2015-05-12 | Tdk Corporation | Thin film capacitor |
JP6015159B2 (ja) * | 2012-06-22 | 2016-10-26 | Tdk株式会社 | 薄膜コンデンサ |
JP2016046454A (ja) * | 2014-08-26 | 2016-04-04 | 太陽誘電株式会社 | 薄膜電子部品 |
JP6610159B2 (ja) * | 2015-10-20 | 2019-11-27 | Tdk株式会社 | 薄膜キャパシタ |
JP6737118B2 (ja) * | 2016-10-11 | 2020-08-05 | Tdk株式会社 | 薄膜コンデンサ |
-
2018
- 2018-03-30 JP JP2018067038A patent/JP6954208B2/ja active Active
-
2019
- 2019-03-21 US US16/360,405 patent/US10950389B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10950389B2 (en) | 2021-03-16 |
US20190304701A1 (en) | 2019-10-03 |
JP2019179794A (ja) | 2019-10-17 |
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