JP6951068B2 - ラテラルプラズマ/ラジカル源 - Google Patents
ラテラルプラズマ/ラジカル源 Download PDFInfo
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- JP6951068B2 JP6951068B2 JP2016224832A JP2016224832A JP6951068B2 JP 6951068 B2 JP6951068 B2 JP 6951068B2 JP 2016224832 A JP2016224832 A JP 2016224832A JP 2016224832 A JP2016224832 A JP 2016224832A JP 6951068 B2 JP6951068 B2 JP 6951068B2
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- electrode
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- plasma source
- source assembly
- hot electrode
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2510/00—Detection of programmed cell death, i.e. apoptosis
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Description
Claims (14)
- 流路を画定するガスインレット及び前面を有するハウジングであって、前記ガスインレットが、ガスの流れを前記流路に沿って移動させ前記ハウジングを通過させて前記前面から排出することを可能にする、ハウジング、
前記ハウジング内のRFホット電極であって、前記流路に隣接して前記流路とほぼ平行に方向付けられた第1の表面を有する、RFホット電極、及び
前記ハウジング内のリターン電極であって、前記流路に隣接して前記流路とほぼ平行に方向付けられ且つ前記RFホット電極の前記第1の表面から間隔を空けられて間隙を形成する、第1の表面を有する、リターン電極を備え、
前記RFホット電極と前記リターン電極との間の前記間隙が、前記ガスインレットに隣接するより狭い間隙から前記前面に隣接するより広い間隙へ変動する、プラズマ源アセンブリ。 - 前記流路とほぼ平行に方向付けられ且つ前記RFホット電極の第2の表面から間隔を空けられて第2の間隙を形成する、第1の表面を有する、第2のリターン電極であって、前記RFホット電極の前記第2の表面が、前記RFホット電極の前記第1の表面の反対側にある、第2のリターン電極を更に備える、請求項1に記載のプラズマ源アセンブリ。
- 前記リターン電極は、接地電極である、請求項1に記載のプラズマ源アセンブリ。
- 前記リターン電極は、前記RFホット電極とは異なる、電力供給される電極である、請求項1に記載のプラズマ源アセンブリ。
- 前記RFホット電極と前記リターン電極との間の前記間隙が、4mmから15mmまでの範囲内にある、請求項1に記載のプラズマ源アセンブリ。
- 前記RFホット電極の厚さが、前記前面に隣接するところよりも前記ガスインレットに隣接するところで大きい、請求項1に記載のプラズマ源アセンブリ。
- 前記RFホット電極が、3mmから11mmまでの範囲内にある厚さを有する、請求項1に記載のプラズマ源アセンブリ。
- 前記RFホット電極が、8mmから40mmまでの範囲内にある高さを有する、請求項1に記載のプラズマ源アセンブリ。
- 前記ハウジングが、楔型の形状を有する、請求項1に記載のプラズマ源アセンブリ。
- 前記RFホット電極と前記リターン電極が、前記ハウジングの主要な軸に沿って延在する、請求項9に記載のプラズマ源アセンブリ。
- 前記RFホット電極と前記リターン電極が、前記ハウジングの主要な軸と垂直に延在する、請求項9に記載のプラズマ源アセンブリ。
- 前記RFホット電極が、蛇のように曲がりくねった形を有し、前記リターン電極が、前記蛇のように曲がりくねった形の長さに沿ってほぼ同じ間隙を維持するような補完的形状を有する、請求項9に記載のプラズマ源アセンブリ。
- 前記RFホット電極が、前記ハウジングの主要な軸と垂直に延在する複数のフィンガを有する、請求項9に記載のプラズマ源アセンブリ。
- 前記RFホット電極の下側端部に隣接するスペーサを更に備える、請求項1に記載のプラズマ源アセンブリ。
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CN106783499A (zh) | 2017-05-31 |
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