JP7068211B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7068211B2 JP7068211B2 JP2019026009A JP2019026009A JP7068211B2 JP 7068211 B2 JP7068211 B2 JP 7068211B2 JP 2019026009 A JP2019026009 A JP 2019026009A JP 2019026009 A JP2019026009 A JP 2019026009A JP 7068211 B2 JP7068211 B2 JP 7068211B2
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- 239000012535 impurity Substances 0.000 claims description 74
- 239000012212 insulator Substances 0.000 claims description 5
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- 239000000758 substrate Substances 0.000 description 34
- 230000006866 deterioration Effects 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000004645 scanning capacitance microscopy Methods 0.000 description 4
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- 238000010438 heat treatment Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
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- 229910001020 Au alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
第1の実施形態の半導体装置は、第1の面と第2の面とを有する半導体層であって、第1導電型の第1の半導体領域と、第1の半導体領域と第1の面との間に設けられた第2導電型の第2の半導体領域と、第2の半導体領域と第1の面との間に設けられ、第1の半導体領域よりも第1導電型不純物濃度の低い第1導電型の第3の半導体領域と、第3の半導体領域と第1の面との間に設けられ、第2の半導体領域よりも第2導電型不純物濃度の高い第2導電型の第4の半導体領域と、を有する半導体層と、半導体層の第1の面の側に設けられ、第3の半導体領域及び第4の半導体領域と電気的に接続された第1の電極と、半導体層の第2の面の側に設けられ、第1の半導体領域と電気的に接続され、第2の半導体領域と電気的に接続されない第2の電極と、を備える。
第2の実施形態の半導体装置は、半導体層は、端面と第2の半導体領域との間に設けられ、第1の面及び前記第5の半導体領域に接する第2導電型の第6の半導体領域と、端面と第6の半導体領域との間に設けられ、第1の面及び第1の半導体領域とに接する第1導電型の第7の半導体領域と、を有する点で第1の実施形態の半導体装置と異なっている。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第3の実施形態の半導体装置は、半導体層は、端面と第5の半導体領域との間に設けられた絶縁体を有する点で第1の実施形態の半導体装置と異なっている。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第4の実施形態の半導体装置は、半導体層は、端面が第1の面との間が鈍角となる傾斜を有する点で第1の実施形態の半導体装置と異なっている。以下、第1の実施形態と重複する内容については、一部記述を省略する。
12 カソード電極(第1の電極)
14 アノード電極(第2の電極)
17 トレンチ
18 保護絶縁層
19 埋め込み絶縁層(絶縁体)
20 基板領域(第1の半導体領域)
22 アノード領域(第2の半導体領域)
24 カソード領域(第3の半導体領域)
26 第1のコンタクト領域(第4の半導体領域)
28 第2のコンタクト領域(第8の半導体領域)
30 第1のバリア領域(第5の半導体領域)
32 第2のバリア領域(第6の半導体領域)
34 端部領域(第7の半導体領域)
40 埋め込み接続層(導電体)
100 ESD保護ダイオード(半導体装置)
200 ESD保護ダイオード(半導体装置)
300 ESD保護ダイオード(半導体装置)
400 ESD保護ダイオード(半導体装置)
P1 第1の面
P2 第2の面
S 端面
Claims (9)
- 第1の面と第2の面とを有する半導体層であって、
第1導電型の第1の半導体領域と、
前記第1の半導体領域と前記第1の面との間に設けられた第2導電型の第2の半導体領域と、
前記第2の半導体領域と前記第1の面との間に設けられ、前記第1の半導体領域よりも第1導電型不純物濃度の低い第1導電型の第3の半導体領域と、
前記第3の半導体領域と前記第1の面との間に設けられ、前記第2の半導体領域よりも第2導電型不純物濃度の高い第2導電型の第4の半導体領域と、
を有する前記半導体層と、
前記半導体層の前記第1の面の側に設けられ、前記第3の半導体領域及び前記第4の半導体領域と電気的に接続された第1の電極と、
前記半導体層の前記第2の面の側に設けられ、前記第1の半導体領域と電気的に接続され、前記第2の半導体領域と電気的に接続されない第2の電極と、
を備える半導体装置。 - 前記半導体層は、前記第1の半導体領域と前記第2の半導体領域との間に設けられ、前記第2の半導体領域よりも第2導電型不純物濃度の高い第2導電型の第5の半導体領域を、有する請求項1記載の半導体装置。
- 前記第5の半導体領域の前記第1の面に垂直な方向の厚さは、前記第2の半導体領域の前記方向の厚さよりも薄い請求項2記載の半導体装置。
- 前記第5の半導体領域の第2導電型不純物濃度は、1×1016cm-3以上5×1018cm-3以下である請求項2又は請求項3記載の半導体装置。
- 前記半導体層は、前記第1の面と前記第2の面との間に位置する端面を有し、
前記第2の半導体領域は前記端面に接し、前記第2の半導体領域は前記端面と前記第3の半導体領域との間で前記第1の面に接し、
前記第5の半導体領域は、前記端面から離間する請求項2ないし請求項4いずれか一項記載の半導体装置。 - 前記端面と前記第5の半導体領域との間に前記第2の半導体領域が設けられた請求項5記載の半導体装置。
- 前記半導体層は、前記第1の面と前記第2の面との間に位置する端面を有し、
前記第2の半導体領域は前記端面と前記第3の半導体領域との間で前記第1の面に接し、
前記半導体層は、前記端面と前記第2の半導体領域との間に設けられ、前記第1の面及び前記第5の半導体領域に接する第2導電型の第6の半導体領域と、前記端面と前記第6の半導体領域との間に設けられ、前記第1の面及び前記第1の半導体領域に接する第1導電型の第7の半導体領域と、を有する請求項2ないし請求項4いずれか一項記載の半導体装置。 - 前記半導体層は、前記第1の面と前記第2の面との間に位置する端面を有し、
前記第2の半導体領域は前記端面と前記第3の半導体領域との間で前記第1の面に接し、
前記半導体層は、前記端面と前記第5の半導体領域との間に設けられた絶縁体を有する請求項2ないし請求項4いずれか一項記載の半導体装置。 - 前記半導体層は、前記第3の半導体領域と前記第1の面との間に設けられ、前記第3の半導体領域よりも第1導電型不純物濃度が高く、前記第1の電極に電気的に接続された第1導電型の第8の半導体領域を、有する請求項1ないし請求項8いずれか一項記載の半導体装置。
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US11942472B2 (en) | 2021-09-15 | 2024-03-26 | Globalfoundries Singapore Pte. Ltd. | High-voltage electrostatic discharge devices |
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JPH06302808A (ja) | 1993-04-12 | 1994-10-28 | Toyota Autom Loom Works Ltd | 半導体装置 |
JPH07211887A (ja) * | 1994-01-25 | 1995-08-11 | Toyota Autom Loom Works Ltd | 半導体装置 |
US5757034A (en) * | 1994-07-28 | 1998-05-26 | International Rectifier Corporation | Emitter switched thyristor |
FR2727571A1 (fr) * | 1994-11-25 | 1996-05-31 | Sgs Thomson Microelectronics | Thyristor a sensibilite en retournement controlee |
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US7750439B2 (en) * | 2005-11-28 | 2010-07-06 | Kabushiki Kaisha Toshiba | ESD protection device |
JP2008172165A (ja) * | 2007-01-15 | 2008-07-24 | Toshiba Corp | 半導体装置 |
CN102054838B (zh) * | 2009-11-05 | 2012-07-25 | 上海宏力半导体制造有限公司 | 双向晶闸管以及静电保护电路 |
US8390092B2 (en) | 2010-11-12 | 2013-03-05 | Freescale Semiconductor, Inc. | Area-efficient high voltage bipolar-based ESD protection targeting narrow design windows |
US8835975B1 (en) * | 2013-05-10 | 2014-09-16 | Ixys Corporation | Ultra-fast breakover diode |
US9806157B2 (en) * | 2014-10-03 | 2017-10-31 | General Electric Company | Structure and method for transient voltage suppression devices with a two-region base |
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