JP6934045B2 - トリクロロジシラン - Google Patents
トリクロロジシラン Download PDFInfo
- Publication number
- JP6934045B2 JP6934045B2 JP2019515826A JP2019515826A JP6934045B2 JP 6934045 B2 JP6934045 B2 JP 6934045B2 JP 2019515826 A JP2019515826 A JP 2019515826A JP 2019515826 A JP2019515826 A JP 2019515826A JP 6934045 B2 JP6934045 B2 JP 6934045B2
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- JP
- Japan
- Prior art keywords
- silicon
- film
- nitrogen
- deposition
- atomic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
Claims (5)
- ケイ素含有膜を基材上に形成するため、トリクロロジシランを含むケイ素前駆体の第1の蒸気、及び窒素分子、アンモニア、アミン、ヒドラジン、又はこれらの任意の2つ若しくは3つの組み合わせを含む窒素前駆体の第2の蒸気を、前記基材の存在下にて堆積条件にさらすこと、を含み、
前記ケイ素含有膜は、HF:水(500:1)の溶液を使用した際のウェットエッチング速度が3.1nm/分以下であるケイ素窒素膜であり、
前記基材を加熱し、原子層堆積のために構成され、反応器内が400℃以上である堆積反応器内に配置し、前記トリクロロジシランを含むケイ素前駆体の第1の蒸気を給送することと、不活性ガスでパージすることと、前記第2の蒸気を前記堆積反応器内に給送することと、原子層堆積を用いて前記ケイ素含有膜を前記加熱された基材上に形成するため、不活性ガスでパージすることと、を繰返し含み、
前記原子層堆積は、プラズマ強化原子層堆積、又は熱原子層堆積を含み、前記給送は、同一であっても異なっていてもよく、
前記トリクロロジシランは、1,1,1−トリクロロジシランである、ケイ素含有膜を基材上に形成する方法。 - 前記ケイ素含有膜は、ウェットエッチング速度が、ヘキサクロロジシランから堆積されたケイ素含有膜のウェットエッチング速度よりも低い、請求項1に記載の方法。
- 前記原子層堆積は、プラズマ強化原子層堆積であり、前記プラズマは、窒素若しくはアルゴン中のアンモニアプラズマ、フォーミングガスプラズマ、又は窒素プラズマである、請求項1又は2に記載の方法。
- 前記第1及び第2の蒸気は、炭素及び酸素を含まないものであり、前記ケイ素窒素膜は、窒化ケイ素膜を含む、請求項1〜3のいずれか一項に記載の方法。
- 前記基材は、半導体材料である、請求項1〜4のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662399709P | 2016-09-26 | 2016-09-26 | |
US62/399,709 | 2016-09-26 | ||
PCT/US2017/052609 WO2018057677A1 (en) | 2016-09-26 | 2017-09-21 | Trichlorodisilane |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019530975A JP2019530975A (ja) | 2019-10-24 |
JP6934045B2 true JP6934045B2 (ja) | 2021-09-08 |
Family
ID=60002087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019515826A Active JP6934045B2 (ja) | 2016-09-26 | 2017-09-21 | トリクロロジシラン |
Country Status (7)
Country | Link |
---|---|
US (2) | US11142462B2 (ja) |
EP (1) | EP3516088A1 (ja) |
JP (1) | JP6934045B2 (ja) |
KR (1) | KR102349808B1 (ja) |
CN (1) | CN109715850A (ja) |
TW (1) | TWI742164B (ja) |
WO (1) | WO2018057677A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019005571A1 (en) * | 2017-06-29 | 2019-01-03 | Dow Silicones Corporation | SYNTHESIS OF 1,1,1-TRICHLORODISILANE |
TWI784022B (zh) * | 2017-07-31 | 2022-11-21 | 中國大陸商南大光電半導體材料有限公司 | 1,1,1-參(二甲胺基)二矽烷及其製備方法 |
US10985010B2 (en) | 2018-08-29 | 2021-04-20 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
US10916477B2 (en) | 2018-09-28 | 2021-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field-effect transistor devices and methods of forming the same |
CN112969818A (zh) | 2018-10-03 | 2021-06-15 | 弗萨姆材料美国有限责任公司 | 用于制备含硅和氮的膜的方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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DE4134422A1 (de) | 1991-10-17 | 1993-04-22 | Wacker Chemie Gmbh | Verfahren zur herstellung von methylchlorsilanen |
US5310583A (en) | 1992-11-02 | 1994-05-10 | Dow Corning Corporation | Vapor phase deposition of hydrogen silsesquioxane resin in the presence of nitrous oxide |
US5968611A (en) * | 1997-11-26 | 1999-10-19 | The Research Foundation Of State University Of New York | Silicon nitrogen-based films and method of making the same |
US7540920B2 (en) * | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
US20050145177A1 (en) * | 2003-12-30 | 2005-07-07 | Mcswiney Michael | Method and apparatus for low temperature silicon nitride deposition |
WO2007030679A2 (en) | 2005-09-07 | 2007-03-15 | The Regents Of The University Of California | Materials for the formation of polymer junction diodes |
US20080026149A1 (en) * | 2006-05-31 | 2008-01-31 | Asm America, Inc. | Methods and systems for selectively depositing si-containing films using chloropolysilanes |
US7772097B2 (en) * | 2007-11-05 | 2010-08-10 | Asm America, Inc. | Methods of selectively depositing silicon-containing films |
JP5346904B2 (ja) * | 2009-11-27 | 2013-11-20 | 東京エレクトロン株式会社 | 縦型成膜装置およびその使用方法 |
US20120108079A1 (en) * | 2010-10-29 | 2012-05-03 | Applied Materials, Inc. | Atomic Layer Deposition Film With Tunable Refractive Index And Absorption Coefficient And Methods Of Making |
JP2012142369A (ja) * | 2010-12-28 | 2012-07-26 | Elpida Memory Inc | 半導体装置、および半導体装置の製造方法 |
TWI634073B (zh) | 2013-09-05 | 2018-09-01 | 道康寧公司 | 2,2,4,4-四矽基五矽烷及其組成物、方法及用途 |
JP6267080B2 (ja) | 2013-10-07 | 2018-01-24 | 東京エレクトロン株式会社 | シリコン窒化物膜の成膜方法および成膜装置 |
JP2015114830A (ja) * | 2013-12-11 | 2015-06-22 | 株式会社リコー | 情報処理装置、制御方法及び制御プログラム |
WO2016191199A1 (en) * | 2015-05-22 | 2016-12-01 | Dow Corning Corporation | Diisopropylaminopentachlorodisilane |
JP6529348B2 (ja) | 2015-06-05 | 2019-06-12 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
-
2017
- 2017-09-21 WO PCT/US2017/052609 patent/WO2018057677A1/en unknown
- 2017-09-21 JP JP2019515826A patent/JP6934045B2/ja active Active
- 2017-09-21 CN CN201780057569.3A patent/CN109715850A/zh active Pending
- 2017-09-21 EP EP17778100.2A patent/EP3516088A1/en active Pending
- 2017-09-21 US US16/327,872 patent/US11142462B2/en active Active
- 2017-09-21 KR KR1020197009956A patent/KR102349808B1/ko active IP Right Grant
- 2017-09-26 TW TW106133001A patent/TWI742164B/zh active
-
2021
- 2021-09-13 US US17/472,943 patent/US20210403330A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20190218103A1 (en) | 2019-07-18 |
EP3516088A1 (en) | 2019-07-31 |
KR102349808B1 (ko) | 2022-01-12 |
WO2018057677A1 (en) | 2018-03-29 |
US11142462B2 (en) | 2021-10-12 |
TWI742164B (zh) | 2021-10-11 |
KR20190046971A (ko) | 2019-05-07 |
US20210403330A1 (en) | 2021-12-30 |
JP2019530975A (ja) | 2019-10-24 |
TW201813927A (zh) | 2018-04-16 |
CN109715850A (zh) | 2019-05-03 |
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