JP6933435B2 - 密封封止分離oledピクセル - Google Patents
密封封止分離oledピクセル Download PDFInfo
- Publication number
- JP6933435B2 JP6933435B2 JP2015063628A JP2015063628A JP6933435B2 JP 6933435 B2 JP6933435 B2 JP 6933435B2 JP 2015063628 A JP2015063628 A JP 2015063628A JP 2015063628 A JP2015063628 A JP 2015063628A JP 6933435 B2 JP6933435 B2 JP 6933435B2
- Authority
- JP
- Japan
- Prior art keywords
- barrier
- barrier element
- substrate
- oled
- oled pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004888 barrier function Effects 0.000 claims description 234
- 239000000758 substrate Substances 0.000 claims description 111
- 239000010409 thin film Substances 0.000 claims description 73
- 239000010410 layer Substances 0.000 claims description 71
- 239000000463 material Substances 0.000 claims description 56
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 27
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 27
- 238000007789 sealing Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 18
- -1 polyethylene terephthalate Polymers 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 239000012044 organic layer Substances 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 14
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 13
- 229920005570 flexible polymer Polymers 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 10
- 229920000642 polymer Polymers 0.000 claims description 10
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000002861 polymer material Substances 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 230000007261 regionalization Effects 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 238000003631 wet chemical etching Methods 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims 3
- 239000004417 polycarbonate Substances 0.000 claims 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- 238000005520 cutting process Methods 0.000 description 22
- 239000005416 organic matter Substances 0.000 description 18
- 239000011368 organic material Substances 0.000 description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- 150000003384 small molecules Chemical class 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000005336 cracking Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000004299 exfoliation Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000010406 cathode material Substances 0.000 description 4
- 239000000412 dendrimer Substances 0.000 description 4
- 229920000736 dendritic polymer Polymers 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920000307 polymer substrate Polymers 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000032798 delamination Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000001010 compromised effect Effects 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 238000010397 one-hybrid screening Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80521—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
本願は、米国特許法第119条(e)に基づき、その出願内容の全体を参照によって援用する、2014年3月27日出願の出願番号61/970,937、Siddharth Harikrishna Mohanらによる、 “Hermetically Sealed Isolated OLED Pixels”に対する利益を主張する。
Claims (11)
- 第1の表面及び第2の表面を有する基板と;
前記基板の第1の表面上に配置される、OLEDピクセルをそれぞれ含む、複数のOLEDピクセルと;
前記基板の第1の表面上に配置され、前記OLEDピクセルを囲む絶縁グリッドを形成する第1のバリア要素と;
前記OLEDピクセル及び前記第1のバリア要素上に配置される第2のバリア要素と、
前記基板の第2の表面である底部の封止を提供するように配置された第3のバリア要素を含む有機発光デバイス(OLED)であって、
前記第2のバリア要素は、パターン形成された頂部バリアであり、
前記第1のバリア要素は、主に各OLEDピクセルに端部の封止を提供し、前記第2のバリア要素は、前記OLEDピクセルを封入して頂部の封止を提供し、
前記第1のバリア要素及び前記第2のバリア要素が、互いに直接接触しており、
前記第1のバリア要素が、SiO2/SiNxの交互の層、SiOxCyHz/IZO/SiOxCyHzの交互の層、酸化インジウム亜鉛の薄膜、酸化アルミニウムの薄膜、酸化亜鉛と酸化アルミニウムの交互の薄い積層体、SiOxCyHzのハイブリッドバリア層、及び無機SiO2とポリマーシリコーンとのハイブリッドバリア層のいずれかであることを特徴とする有機発光デバイス(OLED)。 - 各OLEDピクセルがカソード層、有機層、及びアノード層を有する積層体を含み、
各積層体がパターン形成され、第1のバリア要素によって囲まれ、前記各積層体が、隣接する積層体の有機層からの前記各OLEDピクセルの前記有機層の分離、隣接する積層体のカソード層からの前記各OLEDピクセルの前記カソード層の分離、及び隣接する積層体のアノード層からの前記各OLEDピクセルの前記アノード層の分離の少なくともいずれかを行う請求項1に記載の有機発光デバイス。 - 前記カソード層が第1のカソード層及び第2のカソード層を含み、
前記各OLEDピクセルの前記第1のカソード層が、隣接する積層体の第1のカソード層と連続的であり、前記各OLEDピクセルの有機層が、隣接する積層体の有機層と非連続的である、又は
前記各OLEDピクセルの前記第1のカソード層が、隣接する積層体の第1のカソード層と連続的であり、前記各OLEDピクセルの前記第2のカソード層及び前記有機層が、隣接する積層体の第2のカソード層及び有機層とそれぞれ非連続的である請求項2に記載の有機発光デバイス。 - 前記基板が、ポリカーボネート材料、ポリイミド材料、ポリエチレンテレフタレート(PET)材料、及びポリエチレンナフタレート(PEN)材料の1つ以上を含む可撓性ポリマー材料を含む請求項1に記載の有機発光デバイス。
- 可撓性である請求項1に記載の有機発光デバイス。
- 前記基板、前記第1のバリア要素、前記第2のバリア要素、及び前記第3のバリア要素の少なくとも1つが、耐衝撃性の透明構造を含む請求項1に記載の有機発光デバイス。
- 有機発光デバイス(OLED)を作製する方法であって、
第1の表面及び第2の表面を有する基板の前記第1の表面上に第1のバリア要素を形成して、前記基板上に配置されるOLEDピクセルのための絶縁グリッドを提供すること;
前記第1のバリア要素の境界内において、各OLEDピクセルを前記基板上に形成し、前記第1のバリア要素が前記OLEDピクセルを囲むようにして、前記基板上に複数のOLEDピクセルを形成すること;
前記OLEDピクセル及び前記第1のバリア要素上に第2のバリア要素を形成すること;及び、
前記基板の前記第2の表面上に第3のバリア要素を形成することを含み、
前記第2のバリア要素は、パターン形成された頂部バリアであり、
前記第1のバリア要素が前記各OLEDピクセルに端部の封止を提供し、前記第2のバリア要素が前記OLEDピクセルを封入して頂部の封止を提供し、前記第3のバリア要素が前記基板の第2の表面である底部の封止を提供し、
前記第1のバリア要素及び前記第2のバリア要素が、互いに直接接触しており、
前記第1のバリア要素が、SiO2/SiNxの交互の層、SiOxCyHz/IZO/SiOxCyHzの交互の層、酸化インジウム亜鉛の薄膜、酸化アルミニウムの薄膜、酸化亜鉛と酸化アルミニウムの交互の薄い積層体、SiOxCyHzのハイブリッドバリア層、及び無機SiO2とポリマーシリコーンとのハイブリッドバリア層のいずれかであることを特徴とする方法。 - 前記第1のバリア要素のパターン形成が下記からなる群から選択される期間において行われる請求項7に記載の方法:
堆積中で、所望のグリッドプロファイルを得るために、1つ又は複数のシャドーマスクを用いる;
堆積後で、フォトリソグラフィーを用いる;及び
堆積後で、湿式化学エッチング及びドライエッチングの1つ以上を用い、前記ドライエッチングは、非プラズマ系エッチング、プラズマ系エッチング、及びイオンビームエッチングを含む。 - 前記基板がポリカーボネート材料、重合材料、ポリエチレンテレフタレート(PET)材料、及びポリエチレンナフタレート(PEN)材料の1つ以上を含む可撓性ポリマー材料を含み、薄膜バリアがアノードの形成前に前記基板の少なくとも1つの表面に形成される請求項7に記載の方法。
- 前記各OLEDピクセルがカソード層、有機層、及びアノード層を有する積層体を含み、
各積層体がパターン形成され、前記第1のバリア要素によって囲まれ、前記各積層体が、隣接する積層体の有機層からの前記各OLEDピクセルの前記有機層の分離、隣接する積層体のカソード層からの前記各OLEDピクセルの前記カソード層の分離、及び隣接する積層体のアノード層からの前記各OLEDピクセルの前記アノード層の分離の少なくともいずれかを行う請求項7に記載の方法。 - 第1の表面及び第2の表面を含む基板と;
前記基板の第1の表面上に配置される、OLEDピクセルをそれぞれ含む、複数のOLEDピクセルと;
前記基板の第1の表面上に配置され、前記OLEDピクセルを囲む絶縁グリッドを形成する第1のバリア要素と;
前記OLEDピクセル及び前記第1のバリア要素上に配置される第2のバリア要素と;
前記基板の前記第2の表面上に配置される第3のバリア要素を含む有機発光デバイス
(OLED)であって、
前記第2のバリア要素は、パターン形成された頂部バリアであり、
前記第1のバリア要素は、主に各OLEDピクセルに端部の封止を提供し、前記第2のバリア要素は、前記OLEDピクセルを封入して頂部の封止を提供し、前記第3のバリア要素が前記基板の第2の表面である底部の封止を提供し、
前記第1のバリア要素及び前記第2のバリア要素が、互いに直接接触しており、
前記第1のバリア要素が、金属酸化物、金属窒化物、金属酸窒化物、金属炭化物、金属酸ホウ化物、又はそれらの組合せを含み、
前記基板が、ポリカーボネート材料、ポリイミド材料、ポリエチレンテレフタレート(PET)材料、及びポリエチレンナフタレート(PEN)材料の1つ以上を含む可撓性ポリマー材料を含み、
前記有機発光デバイスが可撓性であることを特徴とする有機発光デバイス(OLED)。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020114590A JP7381415B2 (ja) | 2014-03-27 | 2020-07-02 | 密封封止分離oledピクセル |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461970937P | 2014-03-27 | 2014-03-27 | |
US61/970,937 | 2014-03-27 | ||
US14/661,335 US10910590B2 (en) | 2014-03-27 | 2015-03-18 | Hermetically sealed isolated OLED pixels |
US14/661,335 | 2015-03-18 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020114590A Division JP7381415B2 (ja) | 2014-03-27 | 2020-07-02 | 密封封止分離oledピクセル |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015191891A JP2015191891A (ja) | 2015-11-02 |
JP6933435B2 true JP6933435B2 (ja) | 2021-09-08 |
Family
ID=52736980
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015063628A Active JP6933435B2 (ja) | 2014-03-27 | 2015-03-26 | 密封封止分離oledピクセル |
JP2020114590A Active JP7381415B2 (ja) | 2014-03-27 | 2020-07-02 | 密封封止分離oledピクセル |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020114590A Active JP7381415B2 (ja) | 2014-03-27 | 2020-07-02 | 密封封止分離oledピクセル |
Country Status (6)
Country | Link |
---|---|
US (2) | US10910590B2 (ja) |
EP (1) | EP2927985B1 (ja) |
JP (2) | JP6933435B2 (ja) |
KR (1) | KR102364112B1 (ja) |
CN (1) | CN104952904B (ja) |
TW (1) | TWI685963B (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103943788B (zh) * | 2014-04-02 | 2016-04-06 | 京东方科技集团股份有限公司 | 柔性显示装置及其封装方法 |
WO2017004031A1 (en) * | 2015-07-01 | 2017-01-05 | Koch Gene C | Active matrix enhanced organic light emitting diode displays for large screen graphic display application |
CN105742329A (zh) * | 2016-03-07 | 2016-07-06 | 京东方科技集团股份有限公司 | 显示面板及其制造方法和显示装置 |
CN105977279B (zh) * | 2016-07-07 | 2020-12-01 | 京东方科技集团股份有限公司 | 有机电致发光二极管基板及其制备方法、显示装置 |
KR102651056B1 (ko) | 2016-08-18 | 2024-03-26 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
CN106374055B (zh) * | 2016-10-19 | 2019-04-30 | 深圳市华星光电技术有限公司 | Oled显示面板的制作方法 |
KR20180055024A (ko) | 2016-11-15 | 2018-05-25 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102325171B1 (ko) * | 2017-03-20 | 2021-11-10 | 삼성디스플레이 주식회사 | 표시 장치 |
CN107644947B (zh) | 2017-09-18 | 2020-03-10 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示装置 |
CN108336094B (zh) * | 2018-01-30 | 2019-10-11 | 武汉华星光电半导体显示技术有限公司 | 一种oled显示面板及其制作方法 |
CN110148634A (zh) * | 2018-02-02 | 2019-08-20 | 华星光通科技股份有限公司 | 防止湿气进入的光感测器电极堆迭结构 |
CN108305891A (zh) * | 2018-02-12 | 2018-07-20 | 上海天马微电子有限公司 | 一种显示面板及其制造方法、显示装置 |
FR3079909B1 (fr) | 2018-04-05 | 2022-10-14 | Microoled | Dispositif electroluminescent a resolution et fiabilite ameliorees |
US11552159B2 (en) * | 2018-06-18 | 2023-01-10 | Universal Display Corporation | OLED display with all organic thin film layers patterned |
CN109004005B (zh) | 2018-07-24 | 2020-12-11 | 云谷(固安)科技有限公司 | 显示面板及其制作方法、显示装置 |
EP3864715A4 (en) * | 2018-10-10 | 2022-07-27 | BOE Technology Group Co., Ltd. | DISPLAY SUBSTRATE, DISPLAY APPARATUS AND METHOD OF MAKING DISPLAY SUBSTRATE |
KR102678860B1 (ko) * | 2018-11-29 | 2024-06-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
DE102018132342A1 (de) * | 2018-12-14 | 2020-06-18 | Heliatek Gmbh | Stabilisierung laserstrukturierter organischer Photovoltaik |
FR3092439B1 (fr) | 2019-02-06 | 2022-07-08 | Microoled | Dispositif d’affichage electroluminescent |
US11289458B2 (en) * | 2019-08-01 | 2022-03-29 | Mikro Mesa Technology Co., Ltd. | Micro light-emitting diode transparent display |
DE102020200053A1 (de) | 2020-01-06 | 2021-07-08 | Heliatek Gmbh | Verkapselungssystem für ein optoelektronisches Bauelement mit mindestens einer ersten Verkapselung und einer zweiten Verkapselung, optoelektronisches Bauelement mit einem solchen Verkapselungssystem |
CN111211245B (zh) * | 2020-01-14 | 2021-03-16 | 武汉华星光电半导体显示技术有限公司 | 有机发光二极管显示面板及制备方法、显示装置 |
US11980046B2 (en) * | 2020-05-27 | 2024-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming an isolation structure having multiple thicknesses to mitigate damage to a display device |
JPWO2022163123A1 (ja) * | 2021-02-01 | 2022-08-04 | ||
CN113013203B (zh) * | 2021-02-09 | 2022-08-02 | 武汉天马微电子有限公司 | 显示面板及显示装置 |
JPWO2022185149A1 (ja) * | 2021-03-05 | 2022-09-09 | ||
CN115776824A (zh) * | 2022-11-30 | 2023-03-10 | 京东方科技集团股份有限公司 | 显示面板、可拉伸显示面板及其制备方法、及显示装置 |
Family Cites Families (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4769292A (en) | 1987-03-02 | 1988-09-06 | Eastman Kodak Company | Electroluminescent device with modified thin film luminescent zone |
US5368904A (en) | 1988-07-18 | 1994-11-29 | Stephinson; William P. | Bullet resistant glass |
GB8909011D0 (en) | 1989-04-20 | 1989-06-07 | Friend Richard H | Electroluminescent devices |
TW277023B (en) | 1994-02-21 | 1996-06-01 | Ind Tech Res Inst | An improved device and process of free foaming injection molding |
US5703436A (en) | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
US5707745A (en) | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
US5844363A (en) | 1997-01-23 | 1998-12-01 | The Trustees Of Princeton Univ. | Vacuum deposited, non-polymeric flexible organic light emitting devices |
US6013982A (en) | 1996-12-23 | 2000-01-11 | The Trustees Of Princeton University | Multicolor display devices |
US5834893A (en) | 1996-12-23 | 1998-11-10 | The Trustees Of Princeton University | High efficiency organic light emitting devices with light directing structures |
US6091195A (en) | 1997-02-03 | 2000-07-18 | The Trustees Of Princeton University | Displays having mesa pixel configuration |
US6303238B1 (en) | 1997-12-01 | 2001-10-16 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
US6337102B1 (en) | 1997-11-17 | 2002-01-08 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
US6087196A (en) | 1998-01-30 | 2000-07-11 | The Trustees Of Princeton University | Fabrication of organic semiconductor devices using ink jet printing |
US6097147A (en) | 1998-09-14 | 2000-08-01 | The Trustees Of Princeton University | Structure for high efficiency electroluminescent device |
US6548912B1 (en) | 1999-10-25 | 2003-04-15 | Battelle Memorial Institute | Semicoductor passivation using barrier coatings |
US6294398B1 (en) | 1999-11-23 | 2001-09-25 | The Trustees Of Princeton University | Method for patterning devices |
US6984934B2 (en) | 2001-07-10 | 2006-01-10 | The Trustees Of Princeton University | Micro-lens arrays for display intensity enhancement |
US7071615B2 (en) | 2001-08-20 | 2006-07-04 | Universal Display Corporation | Transparent electrodes |
US7431968B1 (en) | 2001-09-04 | 2008-10-07 | The Trustees Of Princeton University | Process and apparatus for organic vapor jet deposition |
US20030230980A1 (en) | 2002-06-18 | 2003-12-18 | Forrest Stephen R | Very low voltage, high efficiency phosphorescent oled in a p-i-n structure |
US7015640B2 (en) | 2002-09-11 | 2006-03-21 | General Electric Company | Diffusion barrier coatings having graded compositions and devices incorporating the same |
DE20300883U1 (de) | 2002-09-24 | 2003-03-13 | Voest Alpine Bergtechnik | Vorrichtung zur Erzeugung eines Gas-Flüssigkeits-Gemisches im Bereich von Schrämwerkzeugen |
US6952079B2 (en) | 2002-12-18 | 2005-10-04 | General Electric Company | Luminaire for light extraction from a flat light source |
JP4269748B2 (ja) * | 2003-04-01 | 2009-05-27 | セイコーエプソン株式会社 | 表示装置の製造方法 |
JP4538649B2 (ja) | 2003-08-28 | 2010-09-08 | 奇美電子股▲ふん▼有限公司 | 輝度ムラを解消した有機elディスプレイとその製造方法 |
JP4754795B2 (ja) | 2003-09-19 | 2011-08-24 | 株式会社半導体エネルギー研究所 | 表示装置及び表示装置の作製方法 |
US7902747B2 (en) * | 2003-10-21 | 2011-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide |
US7381579B2 (en) * | 2004-02-26 | 2008-06-03 | Samsung Sdi Co., Ltd. | Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet |
US7279704B2 (en) | 2004-05-18 | 2007-10-09 | The University Of Southern California | Complexes with tridentate ligands |
TWM271697U (en) | 2004-09-22 | 2005-08-01 | Mei-Ling Jeng | Improved structure for the upper mold-base installed with a vacuum mask |
TWI267014B (en) | 2005-02-21 | 2006-11-21 | Au Optronics Corp | Organic light emitting diode display |
JP4604778B2 (ja) | 2005-03-17 | 2011-01-05 | セイコーエプソン株式会社 | 有機el装置、電子機器 |
US9041851B2 (en) | 2005-11-15 | 2015-05-26 | The Trustees Of Princeton University | Organic electronic detectors and methods of fabrication |
JP4702009B2 (ja) | 2005-11-22 | 2011-06-15 | セイコーエプソン株式会社 | 発光装置および電子機器 |
KR100695169B1 (ko) | 2006-01-11 | 2007-03-14 | 삼성전자주식회사 | 평판표시장치 |
JP2007242592A (ja) * | 2006-02-02 | 2007-09-20 | Seiko Epson Corp | 発光装置、発光装置の製造方法、露光装置、及び電子機器 |
KR100707210B1 (ko) * | 2006-02-03 | 2007-04-13 | 삼성전자주식회사 | 유기발광 디스플레이 및 그 제조방법 |
EP1987539B1 (en) | 2006-02-10 | 2016-05-25 | Philips Intellectual Property & Standards GmbH | A light emitting device |
JP2007227288A (ja) | 2006-02-27 | 2007-09-06 | Seiko Epson Corp | 有機el装置および電子機器 |
JP4770519B2 (ja) | 2006-03-01 | 2011-09-14 | セイコーエプソン株式会社 | 有機発光装置、有機発光装置の製造方法および電子機器 |
JP4211804B2 (ja) * | 2006-05-19 | 2009-01-21 | セイコーエプソン株式会社 | デバイス、膜形成方法及びデバイスの製造方法 |
US8125138B2 (en) | 2006-06-14 | 2012-02-28 | Koninklijke Philips Electronics N.V. | Structured OLED with micro optics for generating directed light |
US20080006819A1 (en) * | 2006-06-19 | 2008-01-10 | 3M Innovative Properties Company | Moisture barrier coatings for organic light emitting diode devices |
US7968146B2 (en) | 2006-11-01 | 2011-06-28 | The Trustees Of Princeton University | Hybrid layers for use in coatings on electronic devices or other articles |
US20080102223A1 (en) | 2006-11-01 | 2008-05-01 | Sigurd Wagner | Hybrid layers for use in coatings on electronic devices or other articles |
US7687989B2 (en) | 2006-12-01 | 2010-03-30 | Global Oled Technology Llc | Emissive displays having improved contrast |
US7678423B2 (en) | 2007-02-27 | 2010-03-16 | The Regents Of The University Of Michigan | System and method for depositing thin layers on non-planar substrates by stamping |
US7977877B2 (en) | 2007-03-02 | 2011-07-12 | Global Oled Technology Llc | Flat panel OLED device having deformable substrate |
WO2009009695A1 (en) | 2007-07-10 | 2009-01-15 | University Of Florida Research Foundation, Inc. | Top-emission organic light-emitting devices with microlens arrays |
JP2009032464A (ja) | 2007-07-25 | 2009-02-12 | Japan Gore Tex Inc | 有機エレクトロルミネッセンス素子およびディスプレイ装置 |
KR100838090B1 (ko) * | 2007-08-09 | 2008-06-13 | 삼성에스디아이 주식회사 | 유기 발광 표시장치 및 이의 제조방법 |
US8088462B1 (en) | 2007-10-16 | 2012-01-03 | Clear Defense LLC | Protective film systems and kits for vehicular windows and window assemblies and methods using the same |
US20110032704A1 (en) | 2008-04-08 | 2011-02-10 | Sang Keun Oh | Lighting display apparatus and the method for manufacturing the same |
US20090267764A1 (en) | 2008-04-24 | 2009-10-29 | Klaas Richard L | "Catch One" system |
KR20150038544A (ko) | 2008-05-07 | 2015-04-08 | 더 트러스티즈 오브 프린스턴 유니버시티 | 전자 장치들 또는 다른 물품들 위의 코팅들에 사용하기 위한 혼성 층들 |
JP2010086704A (ja) | 2008-09-30 | 2010-04-15 | Nippon Seiki Co Ltd | 有機elパネル |
KR101009567B1 (ko) | 2008-12-05 | 2011-01-18 | 삼성에스디아이 주식회사 | 배터리 팩 |
WO2010111495A1 (en) | 2009-03-25 | 2010-09-30 | The Regents Of The University Of Michigan | Concave-hemisphere-patterned organic top-light emitting device |
KR101084180B1 (ko) | 2009-12-28 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 편광판 및 이를 구비한 유기 발광 디스플레이 장치 |
US8890771B2 (en) | 2010-01-06 | 2014-11-18 | Apple Inc. | Transparent electronic device |
KR101084187B1 (ko) * | 2010-01-21 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 그 제조방법 |
KR101084190B1 (ko) | 2010-02-16 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
JP2011222246A (ja) | 2010-04-08 | 2011-11-04 | Canon Inc | 有機el表示装置の製造方法 |
US8745853B2 (en) | 2010-07-05 | 2014-06-10 | Universal Display Corporation | Antenna fabrication with three-dimensional contoured substrates |
JP2012094429A (ja) | 2010-10-28 | 2012-05-17 | Hitachi Displays Ltd | 有機el表示装置 |
JP2012113228A (ja) | 2010-11-26 | 2012-06-14 | Sony Corp | 表示装置およびその製造方法 |
US9293734B2 (en) | 2010-12-23 | 2016-03-22 | Universal Display Corporation | Light extraction block with curved surface |
US9214510B2 (en) | 2011-01-12 | 2015-12-15 | Universal Display Corporation | OLED lighting device with short tolerant structure |
US8735874B2 (en) * | 2011-02-14 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, display device, and method for manufacturing the same |
US8432095B2 (en) | 2011-05-11 | 2013-04-30 | Universal Display Corporation | Process for fabricating metal bus lines for OLED lighting panels |
JP2013030467A (ja) * | 2011-06-24 | 2013-02-07 | Semiconductor Energy Lab Co Ltd | 発光装置および発光装置の作製方法 |
KR101901832B1 (ko) | 2011-12-14 | 2018-09-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
US9054316B2 (en) * | 2012-02-08 | 2015-06-09 | Joled Inc. | Method of manufacturing organic EL element and organic EL element |
US9949397B2 (en) | 2012-02-23 | 2018-04-17 | Samsung Electronics Co., Ltd. | Touch panel having improved visibility and method of manufacturing the same |
KR101357342B1 (ko) | 2012-03-15 | 2014-02-04 | 엘에스산전 주식회사 | 하드웨어 프로토콜 스택 |
KR101801913B1 (ko) | 2012-03-23 | 2017-11-28 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치와, 이의 제조 방법 |
JP2013206845A (ja) * | 2012-03-29 | 2013-10-07 | Toppan Printing Co Ltd | 有機el表示装置 |
WO2013180544A1 (ko) | 2012-05-31 | 2013-12-05 | 주식회사 엘지화학 | 유기 발광 소자 및 이의 제조방법 |
JP5961053B2 (ja) | 2012-06-29 | 2016-08-02 | 株式会社小糸製作所 | 車両用リアパネル |
US9530984B2 (en) | 2012-09-04 | 2016-12-27 | Sharp Kabushiki Kaisha | Organic electroluminescence display and method of manufacturing the same |
JP5914286B2 (ja) * | 2012-09-28 | 2016-05-11 | 富士フイルム株式会社 | 電子モジュール |
US9921425B2 (en) | 2013-04-05 | 2018-03-20 | Jiansheng Wang | Switchable projection panel |
KR20140139296A (ko) | 2013-05-27 | 2014-12-05 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR102062842B1 (ko) * | 2013-06-03 | 2020-01-07 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
JP6666838B2 (ja) | 2013-06-14 | 2020-03-18 | コーニング インコーポレイテッド | ラミネート封着シート |
KR102090713B1 (ko) * | 2013-06-25 | 2020-03-19 | 삼성디스플레이 주식회사 | 가요성 표시 패널 및 상기 가요성 표시 패널의 제조 방법 |
KR102085319B1 (ko) | 2013-07-30 | 2020-03-06 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 이의 제조 방법 |
JP6189692B2 (ja) | 2013-09-25 | 2017-08-30 | 株式会社ジャパンディスプレイ | Oled表示パネル |
KR102148935B1 (ko) * | 2013-11-21 | 2020-08-31 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR20150116944A (ko) | 2014-04-08 | 2015-10-19 | 삼성디스플레이 주식회사 | 도어 겸용 표시 장치 |
-
2015
- 2015-03-18 US US14/661,335 patent/US10910590B2/en active Active
- 2015-03-26 TW TW104109832A patent/TWI685963B/zh active
- 2015-03-26 JP JP2015063628A patent/JP6933435B2/ja active Active
- 2015-03-27 EP EP15161233.0A patent/EP2927985B1/en active Active
- 2015-03-27 KR KR1020150043070A patent/KR102364112B1/ko active IP Right Grant
- 2015-03-27 CN CN201510142861.8A patent/CN104952904B/zh active Active
-
2020
- 2020-07-02 JP JP2020114590A patent/JP7381415B2/ja active Active
- 2020-12-29 US US17/136,404 patent/US11997866B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20210119175A1 (en) | 2021-04-22 |
US11997866B2 (en) | 2024-05-28 |
US20150280170A1 (en) | 2015-10-01 |
JP2015191891A (ja) | 2015-11-02 |
CN104952904A (zh) | 2015-09-30 |
TW201601306A (zh) | 2016-01-01 |
TWI685963B (zh) | 2020-02-21 |
JP2020181824A (ja) | 2020-11-05 |
EP2927985B1 (en) | 2023-05-10 |
KR20150112885A (ko) | 2015-10-07 |
US10910590B2 (en) | 2021-02-02 |
EP2927985A2 (en) | 2015-10-07 |
CN104952904B (zh) | 2020-06-09 |
EP2927985A3 (en) | 2015-11-18 |
JP7381415B2 (ja) | 2023-11-15 |
KR102364112B1 (ko) | 2022-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6933435B2 (ja) | 密封封止分離oledピクセル | |
KR102113946B1 (ko) | 유기 디바이스 상의 비공통 캡핑 층 | |
JP5675924B2 (ja) | 有機光電子装置及び前記装置をカプセル化する方法 | |
US8912018B2 (en) | Manufacturing flexible organic electronic devices | |
KR102321945B1 (ko) | 기판 및 소자를 위한 박막 투과 배리어 시스템과 그의 제조 방법 | |
JP6305997B2 (ja) | 有機エレクトロルミネッセンスデバイス | |
US20160254487A1 (en) | Permeation barrier system for substrates and devices and method of making the same | |
US20110193102A1 (en) | Organic light emitting diode device and method for manufacturing the same | |
US10811633B2 (en) | Method of increasing the flexibility of an AMOLDED display, a flexible display, and a product | |
TWI226026B (en) | Organic electroluminescent display panel and manufacturing method therefor | |
JP2004356095A (ja) | 平板表示装置及びその製造方法 | |
WO2011114860A1 (ja) | 発光装置 | |
US20130334510A1 (en) | Electronic devices with improved shelf lives | |
KR102077345B1 (ko) | 레이저 전사를 사용한 oled 제작 | |
US11751426B2 (en) | Hybrid thin film permeation barrier and method of making the same | |
WO2010030866A1 (en) | Plasma deposition with non-conductive layer | |
KR100661159B1 (ko) | 유기 전계 발광 소자 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170926 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180823 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180918 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181217 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20190205 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190625 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190924 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191114 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200324 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200702 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20200702 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20200709 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20200714 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20200911 |
|
C211 | Notice of termination of reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C211 Effective date: 20200915 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20201110 |
|
C13 | Notice of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: C13 Effective date: 20210202 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210422 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20210622 |
|
C23 | Notice of termination of proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C23 Effective date: 20210629 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20210706 |
|
C03 | Trial/appeal decision taken |
Free format text: JAPANESE INTERMEDIATE CODE: C03 Effective date: 20210817 |
|
C30A | Notification sent |
Free format text: JAPANESE INTERMEDIATE CODE: C3012 Effective date: 20210817 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210819 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6933435 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |