JP6929968B2 - バイパス・ゲート式トランジスタを備える高出力mmicデバイス - Google Patents
バイパス・ゲート式トランジスタを備える高出力mmicデバイス Download PDFInfo
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- JP6929968B2 JP6929968B2 JP2019560218A JP2019560218A JP6929968B2 JP 6929968 B2 JP6929968 B2 JP 6929968B2 JP 2019560218 A JP2019560218 A JP 2019560218A JP 2019560218 A JP2019560218 A JP 2019560218A JP 6929968 B2 JP6929968 B2 JP 6929968B2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Microwave Amplifiers (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021131203A JP7242777B2 (ja) | 2017-05-05 | 2021-08-11 | バイパス・ゲート式トランジスタを備える高出力mmicデバイス |
JP2023035192A JP7538275B2 (ja) | 2017-05-05 | 2023-03-08 | バイパス・ゲート式トランジスタを備える高出力mmicデバイス |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/587,830 | 2017-05-05 | ||
US15/587,830 US10128365B2 (en) | 2016-03-17 | 2017-05-05 | Bypassed gate transistors having improved stability |
US15/608,048 US9947616B2 (en) | 2016-03-17 | 2017-05-30 | High power MMIC devices having bypassed gate transistors |
US15/608,048 | 2017-05-30 | ||
PCT/US2018/030863 WO2018204622A1 (fr) | 2017-05-05 | 2018-05-03 | Dispositifs mmic à haute puissance ayant des transistors de grille dérivés |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021131203A Division JP7242777B2 (ja) | 2017-05-05 | 2021-08-11 | バイパス・ゲート式トランジスタを備える高出力mmicデバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020519025A JP2020519025A (ja) | 2020-06-25 |
JP6929968B2 true JP6929968B2 (ja) | 2021-09-01 |
Family
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Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019560218A Active JP6929968B2 (ja) | 2017-05-05 | 2018-05-03 | バイパス・ゲート式トランジスタを備える高出力mmicデバイス |
JP2021131203A Active JP7242777B2 (ja) | 2017-05-05 | 2021-08-11 | バイパス・ゲート式トランジスタを備える高出力mmicデバイス |
JP2023035192A Active JP7538275B2 (ja) | 2017-05-05 | 2023-03-08 | バイパス・ゲート式トランジスタを備える高出力mmicデバイス |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
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JP2021131203A Active JP7242777B2 (ja) | 2017-05-05 | 2021-08-11 | バイパス・ゲート式トランジスタを備える高出力mmicデバイス |
JP2023035192A Active JP7538275B2 (ja) | 2017-05-05 | 2023-03-08 | バイパス・ゲート式トランジスタを備える高出力mmicデバイス |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3619738A4 (fr) |
JP (3) | JP6929968B2 (fr) |
CN (2) | CN110582846B (fr) |
WO (1) | WO2018204622A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111370474B (zh) * | 2020-04-23 | 2023-10-24 | 上海华虹宏力半导体制造有限公司 | 沟槽栅器件的栅极串联电阻 |
CN116504791A (zh) * | 2020-06-28 | 2023-07-28 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、栅极行驱动电路及阵列基板 |
WO2023056145A1 (fr) * | 2021-10-01 | 2023-04-06 | Wolfspeed, Inc. | Transistors à grille contournés ayant une stabilité améliorée |
WO2023136121A1 (fr) * | 2022-01-13 | 2023-07-20 | 住友電気工業株式会社 | Dispositif à semi-conducteur |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0687505B2 (ja) * | 1987-12-22 | 1994-11-02 | 日本電気株式会社 | 大電力用電界効果トランジスタ |
JP2884577B2 (ja) * | 1988-10-19 | 1999-04-19 | 日本電気株式会社 | 電界効果トランジスタ |
US5500522A (en) * | 1991-09-30 | 1996-03-19 | Luminis Pty. Limited | Gallium arsenide MESFET imager |
US5592006A (en) * | 1994-05-13 | 1997-01-07 | International Rectifier Corporation | Gate resistor for IGBT |
JPH1145891A (ja) * | 1997-07-25 | 1999-02-16 | Toshiba Corp | 高周波用集積回路素子 |
US6023086A (en) * | 1997-09-02 | 2000-02-08 | Motorola, Inc. | Semiconductor transistor with stabilizing gate electrode |
JP3515886B2 (ja) * | 1997-09-29 | 2004-04-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP3269475B2 (ja) * | 1998-02-16 | 2002-03-25 | 日本電気株式会社 | 半導体装置 |
JP3373435B2 (ja) * | 1998-06-25 | 2003-02-04 | 日本電信電話株式会社 | 抵抗帰還トランジスタ |
JP2001094094A (ja) | 1999-09-21 | 2001-04-06 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP3542116B2 (ja) * | 2000-09-29 | 2004-07-14 | ユーディナデバイス株式会社 | 高周波回路 |
JP3712111B2 (ja) * | 2001-03-30 | 2005-11-02 | ユーディナデバイス株式会社 | 電力増幅用半導体装置 |
JP4361313B2 (ja) * | 2003-05-08 | 2009-11-11 | 三菱電機株式会社 | 高周波電力増幅器 |
US7492235B2 (en) * | 2006-10-25 | 2009-02-17 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Transmission line transistor attenuator |
JP5106041B2 (ja) | 2007-10-26 | 2012-12-26 | 株式会社東芝 | 半導体装置 |
JP5238633B2 (ja) * | 2009-07-27 | 2013-07-17 | 株式会社東芝 | 半導体装置 |
US8212321B2 (en) * | 2009-10-30 | 2012-07-03 | Freescale Semiconductor, Inc. | Semiconductor device with feedback control |
JP2012182438A (ja) * | 2011-02-08 | 2012-09-20 | Toshiba Corp | 半導体装置 |
US20130313653A1 (en) * | 2012-05-25 | 2013-11-28 | Infineon Technologies Austria Ag | MOS Transistor with Multi-finger Gate Electrode |
US9859411B2 (en) * | 2014-05-21 | 2018-01-02 | Sharp Kabushiki Kaisha | Field effect transistor |
US20170301766A1 (en) | 2014-09-17 | 2017-10-19 | Sharp Kabushiki Kaisha | Compound semiconductor field effect transistor |
-
2018
- 2018-05-03 CN CN201880029743.8A patent/CN110582846B/zh active Active
- 2018-05-03 EP EP18795054.8A patent/EP3619738A4/fr active Pending
- 2018-05-03 WO PCT/US2018/030863 patent/WO2018204622A1/fr active Application Filing
- 2018-05-03 CN CN202310564820.2A patent/CN116403982A/zh active Pending
- 2018-05-03 JP JP2019560218A patent/JP6929968B2/ja active Active
-
2021
- 2021-08-11 JP JP2021131203A patent/JP7242777B2/ja active Active
-
2023
- 2023-03-08 JP JP2023035192A patent/JP7538275B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2023081974A (ja) | 2023-06-13 |
JP7538275B2 (ja) | 2024-08-21 |
JP7242777B2 (ja) | 2023-03-20 |
CN110582846A (zh) | 2019-12-17 |
EP3619738A4 (fr) | 2021-01-13 |
WO2018204622A1 (fr) | 2018-11-08 |
EP3619738A1 (fr) | 2020-03-11 |
JP2022002308A (ja) | 2022-01-06 |
JP2020519025A (ja) | 2020-06-25 |
CN110582846B (zh) | 2023-05-12 |
CN116403982A (zh) | 2023-07-07 |
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