JP6916397B2 - マルチビームレーザーデボンディング装置 - Google Patents
マルチビームレーザーデボンディング装置 Download PDFInfo
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
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- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/60—Preliminary treatment
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- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01L2224/75253—Means for applying energy, e.g. heating means adapted for localised heating
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- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75261—Laser
- H01L2224/75263—Laser in the upper part of the bonding apparatus, e.g. in the bonding head
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- H01L2224/812—Applying energy for connecting
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- H01L2224/818—Bonding techniques
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Description
前記第一基板の領域より狭い領域の前記デボンディングの対象である電子部品の付着位置のみを含む第二基板領域に前記第一レーザービームと重ね合わせる第二レーザービームを照射して前記デボンディング対象の電子部品の半田を溶融が始まるデボンディング温度まで追加で加熱する第二レーザーモジュールを含む。
前記カメラ部からの出力信号に基づき前記レーザー照射部の各レーザーモジュールを独立的にコントロールするための制御信号を生成して、前記レーザー照射部に伝えるレーザー出力調整部をさらに含む。
320:第二レーザーモジュール
316、326:冷却装置
311,321:レーザー発振器
313、323:光学レンズモジュール
314、424:駆動装置
315、325:制御装置
317,327:電源供給部
Claims (6)
- 基板から電子部品をデボンディングするためのレーザーデボンディング装置において、デボンディング対象の電子部品と当該周辺電子部品の付着位置を含む所定範囲の第一基板領域に第一レーザービームを照射して前記電子部品の半田を所定の予熱温度まで加熱する一つ以上の第一レーザーモジュール、
前記第一基板領域より狭い領域である、前記デボンディング対象の電子部品の付着位置のみを含む第二基板領域に前記第一レーザービームより出力が低い第二レーザービームを前記第一レーザービームと互いに相違する最大出力と波長を有する状態で同時に重ね合わせるよう照射して前記デボンディング対象の電子部品の半田を溶融が始まるデボンディング温度まで追加で加熱する一つ以上の第二レーザーモジュール、
前記第一レーザービーム及び前記第二レーザービームによる前記電子部品のデボンディング過程を撮影するため、少なくとも一台のカメラモジュールで構成されるカメラ部、
前記第一レーザービーム及び前記第二レーザービームを放出するレーザー照射部、および、
前記カメラ部からの出力信号に基づき、前記第一レーザーモジュール及び前記第二レーザーモジュールからのレーザービームの形、重ね合わせ領域、照射角度、出力、波長、および温度を独立的にコントロールするための制御信号を生成して、前記レーザー照射部に伝えるレーザー出力調整部をさらに含み、
前記第一レーザービームと前記第二レーザービームの照射面は、前記第一レーザーモジュール及び前記第二レーザーモジュールに備えられたビームシェイパーによってそれぞれ四角形または円筒形で構成され、
前記第一レーザーモジュールによる前記第一レーザービームの温度プロファイルは、半田の溶融点より低い所定の予熱温度までデボンディング対象の電子部品とその周辺の領域を含む所定の面積の第一基板領域の温度を上昇させ、前記第二レーザーモジュールによる前記第二レーザービームの温度プロファイルは、デボンディング対象の電子部品の付着領域である第二基板領域にのみデボンディング温度まで追加で上昇させてデボンディング対象の電子部品の付着領域内の電子部品の半田のみが溶融されるように誘導し、
前記第一レーザービームと前記第二レーザービームが照射されたとき、基板上の隣接領域に配置された前記周辺電子部品が過熱しないように、前記第一レーザービームと前記第二レーザービームの形状、重ね合わせ領域、エッジトリミング、照射角度、出力、波長、および温度を制御して目的の電子部品だけを選択的にデボンディングされる、
マルチビームレーザーデボンディング装置。 - 前記第一基板領域の前記予熱温度と前記第二基板領域の前記デボンディング温度の差は20℃から40℃である、
請求項1に記載のマルチビームレーザーデボンディング装置。 - 前記第一レーザーモジュール及び前記第二レーザーモジュールは、相互対称に配置され、前記第一レーザービーム及び前記第二レーザービームは同一のビームの照射角度を有し、互いに相違する最大出力と波長を有する、
請求項1に記載のマルチビームレーザーデボンディング装置。 - 前記第一基板領域の前記予熱温度と前記第二基板領域の前記デボンディング温度の偏差は10%から15%である、
請求項1に記載のマルチビームレーザーデボンディング装置。 - 前記第一レーザービームと前記第二レーザービームは、順次に照射される、
請求項1に記載のマルチビームレーザーデボンディング装置。 - 前記第一レーザービームと前記第二レーザービームの重ね合わせによる温度プロファイルは、2段階の上昇期と2段階の下降期を有する、
請求項1に記載のマルチビームレーザーデボンディング装置。
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