JP6910886B2 - 表示装置 - Google Patents
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- JP6910886B2 JP6910886B2 JP2017160452A JP2017160452A JP6910886B2 JP 6910886 B2 JP6910886 B2 JP 6910886B2 JP 2017160452 A JP2017160452 A JP 2017160452A JP 2017160452 A JP2017160452 A JP 2017160452A JP 6910886 B2 JP6910886 B2 JP 6910886B2
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- 229910052751 metal Inorganic materials 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 42
- 230000002093 peripheral effect Effects 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 47
- 239000004973 liquid crystal related substance Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 101100268330 Solanum lycopersicum TFT7 gene Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
Description
液晶表示装置の表示パネル1は、アレイ基板2と、対向基板3と、これらの間隙に保持される液晶層4と、両基板2,3の周辺領域9同士を貼り合わせて液晶層4を封止するシール部材5とにより形成されている。表示パネル1は、画像を表示するための表示領域8と、それを囲む周辺領域9とからなる。
表示パネル1の回路構成について図1を参照して説明する。
(ASW)54が設けられている。信号線ドライバ52は、外部からの信号に基づいて各信号線15にRGB画像信号を出力する。
信号選択回路54について説明する。
タッチセンサの構造について図2を参照して説明する。
画素6の構造について図3を参照して説明する。図3に示すように、画素6は、信号線15の方向に沿って長く延び、その長手方向の領域の大部分が、画素開口部31に相当し、この部分にスリット14Bを有する画素電極14が配置されている。TFT7は、画素6の一端部に形成され、画素電極14から延びる画素電極延在部14Aが配置されている。スリット14Bによって、画素電極14は、共通電極13との間で電界を形成できる。
アレイ基板2の構造について図3〜図7を参照して説明する。
対向基板3について図4〜7を参照して説明する。
次に、アレイ基板2の下周辺領域9の構造について説明する。下周辺領域9には、図8に示すように、信号線ドライバ(DDIC)52と信号選択回路(ASW)54が設けられている。下周辺領域9において、信号選択回路54とその外側に設けられている信号線ドライバ52との間には、x方向に沿って、有機絶縁膜12に溝部208が設けられている。この付近の配線構造について図8〜図10に基づいて説明する。
アレイ基板2の製造工程の概略について図11〜図14を参照して説明する。
信号線ドライバ52から信号選択回路54間の接続線210は、異なる電位の映像信号が常に変化しながら流れるため、高周波パルスとなり、EMIのノイズ源となる。本実施形態によれば、信号選択回路54から溝部208までに存在する接続線210の上層にシールド層218を設けたため、信号選択回路54に対する信号線ドライバ52からの制御パルスに起因するEMIノイズが、周辺に放出されるのを防止できる。
Claims (7)
- 表示パネルを構成する第1基板上に、
第1金属線からなる複数のゲート線と、
前記ゲート線と交差するように設けられた第2金属線からなる複数の信号線と、
前記ゲート線と前記信号線の交差する位置にそれぞれ設けられたスイッチング素子と、
一方向に延設された第1透明電極からなる共通電極と、
前記各スイッチング素子にそれぞれ接続された第2透明電極からなる画素電極と、
を有し、
前記表示パネルは、表示領域と前記表示領域を囲む周辺領域を有し、
前記周辺領域に、
映像信号を出力する信号線ドライバと、
前記信号線ドライバから出力された前記映像信号を、前記信号線へ振り分ける信号選択回路と、
前記信号線ドライバと前記信号選択回路とを接続する複数の接続線と、
平面視で視て、前記信号選択回路以外の領域で、かつ、複数の前記接続線と重複する位置に、前記第2透明電極と同じ材料で形成されたシールド層と、
を有し、
前記表示領域において、前記第2金属線からなる前記信号線が形成された層と、第2透明電極からなる前記画素電極が形成された層の間には、有機絶縁膜が形成され、
前記周辺領域において、少なくとも前記信号線ドライバと前記信号選択回路との間には、前記有機絶縁膜に溝部が設けられ、
前記第2金属線は、絶縁膜を介して前記第1金属線より上層に形成され、
前記接続線は、前記信号選択回路から前記溝部までは、前記第2金属線からなる第1接続線で形成され、前記溝部から前記信号線ドライバまでは、前記第1金属線で形成された第2接続線で形成され、前記第1接続線と前記第2接続線はコンタクトホールで接続されている、
表示装置。 - 前記共通電極の延設方向は、前記ゲート線の延設方向と同じ方向である、
請求項1に記載の表示装置。 - 前記シールド層は、平面視で視て、前記信号選択回路から前記溝部の間に形成されている、
請求項1に記載の表示装置。 - 前記共通電極の延設方向は、前記信号線の延設方向と同じ方向である、
請求項1に記載の表示装置。 - 表示パネルを構成する第1基板上に、
第1金属線からなる複数のゲート線と、
前記ゲート線と交差するように設けられた第2金属線からなる複数の信号線と、
前記ゲート線と前記信号線の交差する位置にそれぞれ設けられたスイッチング素子と、
一方向に延設された第1透明電極からなる共通電極と、
前記各スイッチング素子にそれぞれ接続された第2透明電極からなる画素電極と、
を有し、
前記表示パネルは、表示領域と前記表示領域を囲む周辺領域を有し、
前記周辺領域に、
映像信号を出力する信号線ドライバと、
前記信号線ドライバから出力された前記映像信号を、前記信号線へ振り分ける信号選択回路と、
前記信号線ドライバと前記信号選択回路とを接続する複数の第1接続線と、
画像を表示するときに前記共通電極にコモン電圧を供給する場合と、タッチセンサとして使用するとき送信信号を供給する場合とを切り替える切替回路と、
前記切替回路から前記共通電極に接続される第2接続線と、
平面視で視て、前記信号選択回路、前記切替回路、及び前記第2接続線以外の領域で、かつ、前記第1接続線と重畳する位置に、前記第2透明電極と同じ材料で形成されたシールド層、
を有する表示装置。 - 前記共通電極の延在方向は、前記信号線の延在方向と同じである、
請求項5に記載の表示装置。 - 前記共通電極に電気的に接続するように第3金属線が形成され、
前記第2接続線は、前記第1透明電極から形成された層と、前記第3金属線から形成された層からなる、
請求項6に記載の表示装置。
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JP2017160452A JP6910886B2 (ja) | 2017-08-23 | 2017-08-23 | 表示装置 |
US16/051,537 US10777584B2 (en) | 2017-08-23 | 2018-08-01 | Display device |
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JP2017160452A JP6910886B2 (ja) | 2017-08-23 | 2017-08-23 | 表示装置 |
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JP6910886B2 true JP6910886B2 (ja) | 2021-07-28 |
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KR20210025230A (ko) * | 2019-08-27 | 2021-03-09 | 삼성전자주식회사 | 디스플레이 장치 및 그 제어방법 |
KR20210080674A (ko) * | 2019-12-20 | 2021-07-01 | 삼성디스플레이 주식회사 | 표시 장치 |
JP2023006491A (ja) | 2021-06-30 | 2023-01-18 | 株式会社ジャパンディスプレイ | 表示装置 |
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JP3956562B2 (ja) * | 1999-12-27 | 2007-08-08 | セイコーエプソン株式会社 | 電気光学装置 |
JP4049162B2 (ja) * | 2004-06-18 | 2008-02-20 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
US7868883B2 (en) * | 2005-05-27 | 2011-01-11 | Seiko Epson Corporation | Electro-optical device and electronic apparatus having the same |
JP5072639B2 (ja) | 2008-02-15 | 2012-11-14 | 株式会社ジャパンディスプレイセントラル | 液晶表示装置 |
EP2560045B1 (en) * | 2010-04-16 | 2016-05-11 | Sharp Kabushiki Kaisha | Display device |
KR101894270B1 (ko) * | 2011-08-12 | 2018-10-15 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이의 제조 방법 및 이를 포함하는 표시 장치 |
JP2013064800A (ja) * | 2011-09-15 | 2013-04-11 | Japan Display Central Co Ltd | 液晶表示装置 |
KR20150079645A (ko) * | 2012-10-30 | 2015-07-08 | 샤프 가부시키가이샤 | 액티브 매트릭스 기판, 표시 패널 및 그것을 구비한 표시 장치 |
KR101579353B1 (ko) * | 2012-12-05 | 2015-12-21 | 가부시키가이샤 재팬 디스프레이 | 터치 검출 기능을 구비한 표시 장치 및 전자 기기 |
JP5681269B2 (ja) * | 2013-11-27 | 2015-03-04 | 株式会社ジャパンディスプレイ | 液晶表示パネル |
JP6117138B2 (ja) * | 2014-03-20 | 2017-04-19 | 株式会社ジャパンディスプレイ | センサ付き表示装置 |
TWI554931B (zh) * | 2014-03-18 | 2016-10-21 | Japan Display Inc | A display device with a sensor |
WO2015170369A1 (ja) * | 2014-05-09 | 2015-11-12 | パナソニック液晶ディスプレイ株式会社 | 液晶表示装置 |
JP6633924B2 (ja) * | 2016-01-27 | 2020-01-22 | 株式会社ジャパンディスプレイ | 表示装置 |
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2018
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US20190067333A1 (en) | 2019-02-28 |
US10777584B2 (en) | 2020-09-15 |
JP2019039985A (ja) | 2019-03-14 |
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