JP6907697B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 88
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 8
- 239000003566 sealing material Substances 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 67
- 239000011347 resin Substances 0.000 claims description 64
- 229920005989 resin Polymers 0.000 claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 61
- 239000002184 metal Substances 0.000 claims description 61
- 239000000853 adhesive Substances 0.000 claims description 53
- 230000001070 adhesive effect Effects 0.000 claims description 53
- 229920000647 polyepoxide Polymers 0.000 claims description 38
- 239000003822 epoxy resin Substances 0.000 claims description 36
- 229920001187 thermosetting polymer Polymers 0.000 claims description 33
- 239000002245 particle Substances 0.000 claims description 28
- 229920002379 silicone rubber Polymers 0.000 claims description 23
- 239000004945 silicone rubber Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 21
- 229920000459 Nitrile rubber Polymers 0.000 claims description 12
- 239000005062 Polybutadiene Substances 0.000 claims description 10
- 229920002857 polybutadiene Polymers 0.000 claims description 10
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 claims description 7
- 239000005011 phenolic resin Substances 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 description 12
- 239000011256 inorganic filler Substances 0.000 description 10
- 229910003475 inorganic filler Inorganic materials 0.000 description 10
- 239000011342 resin composition Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 7
- 239000008393 encapsulating agent Substances 0.000 description 6
- 239000004734 Polyphenylene sulfide Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229920000069 polyphenylene sulfide Polymers 0.000 description 5
- 230000035939 shock Effects 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 238000013329 compounding Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 150000008065 acid anhydrides Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- WQJMUFDRKNDHSU-UHFFFAOYSA-N [amino(oxiran-2-yl)methoxy]-(oxiran-2-yl)methanamine Chemical compound C1OC1C(N)OC(N)C1CO1 WQJMUFDRKNDHSU-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000013464 silicone adhesive Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Sealing Material Composition (AREA)
Description
図1に示すように、パワー半導体モジュールは、パワー半導体チップ1と、積層基板2と、金属基板3と、端子ケース4と、金属端子5と、金属ワイヤ6と、蓋7と、封止材8と、中間層10と、を備える。
図7は、実施の形態にかかるパワー半導体モジュールの評価結果を示す表である。種々の条件で実施の形態にかかるパワー半導体モジュールを作成し、作成したパワー半導体モジュールに対して、ヒートショック試験を行った結果を示す。ヒートショック試験では、−40℃〜125℃の温度変化を1000回行った。
2 積層基板
21 絶縁性基板
22 導電性板
3 金属基板
4 端子ケース
5 金属端子
6 金属ワイヤ
7 蓋
8 封止材
9 接着剤
10 中間層
Claims (9)
- 半導体素子を搭載した積層基板と、
前記積層基板を搭載した金属基板と、
前記金属基板を接着剤で接着した樹脂ケースと、
前記樹脂ケース内を充填した封止材と、
前記金属基板と前記樹脂ケースとの接着部分と、前記封止材との間に設けられた中間層と、
を備え、
前記中間層は、線膨張係数が前記封止材の線膨張係数より大きく、前記接着剤の線膨張係数より小さいことを特徴とする半導体装置。 - 前記中間層は、線膨張係数が前記封止材の線膨張係数と、前記接着剤の線膨張係数との中間の値であることを特徴とする請求項1に記載の半導体装置。
- 前記中間層は、弾性率が前記封止材の弾性率より小さく、前記接着剤の弾性率より大きいことを特徴とする請求項1または2に記載の半導体装置。
- 前記中間層は、弾性率が前記封止材の弾性率と、前記接着剤の弾性率との中間の値であることを特徴とする請求項1または2に記載の半導体装置。
- 前記中間層は、熱硬化性樹脂に線膨張係数が20×10-6/K〜400×10-6/Kの添加粒子を配合したものであることを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記熱硬化性樹脂は、エポキシ樹脂、フェノール樹脂、またはマレイミド樹脂であり、前記添加粒子はシリコーンゴム、ブタジエンゴム、またはアクリロニトリルブタジエンゴムであることを特徴とする請求項5に記載の半導体装置。
- 前記添加粒子は、前記熱硬化性樹脂100質量部に対して1〜10質量部含まれることを特徴とする請求項5または6に記載の半導体装置。
- 前記封止材としての熱硬化性樹脂は、エポキシ樹脂、フェノール樹脂、またはマレイミド樹脂であり、前記接着剤の材料はシリコーンゴム、ブタジエンゴム、またはアクリロニトリルブタジエンゴムであることを特徴とする請求項5または6に記載の半導体装置。
- 半導体素子を積層基板に搭載する第1工程と、
前記積層基板を金属基板に搭載する第2工程と、
前記金属基板を接着剤で樹脂ケースに接着する第3工程と、
前記金属基板と前記樹脂ケースとの接着部分で前記樹脂ケースの内側に中間層を形成する第4工程と、
前記樹脂ケース内を封止材で充填する第5工程と、
を含み、
前記第4工程では、前記中間層を、線膨張係数が前記封止材の線膨張係数より大きく、前記接着剤の線膨張係数より小さく、前記接着部分と前記封止材との間に形成することを特徴とする半導体装置の製造方法。
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JP2913247B2 (ja) * | 1993-08-11 | 1999-06-28 | 株式会社日立製作所 | パワー半導体モジュール及び車両用インバータ装置 |
JP4319591B2 (ja) * | 2004-07-15 | 2009-08-26 | 株式会社日立製作所 | 半導体パワーモジュール |
JP6094413B2 (ja) * | 2013-07-18 | 2017-03-15 | 三菱電機株式会社 | 半導体モジュール及びその製造方法 |
JP6171844B2 (ja) * | 2013-10-28 | 2017-08-02 | 富士電機株式会社 | パワー半導体モジュール |
JP6540326B2 (ja) * | 2015-07-24 | 2019-07-10 | 富士電機株式会社 | 半導体装置およびその製造方法 |
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