JP6171844B2 - パワー半導体モジュール - Google Patents
パワー半導体モジュール Download PDFInfo
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- JP6171844B2 JP6171844B2 JP2013222969A JP2013222969A JP6171844B2 JP 6171844 B2 JP6171844 B2 JP 6171844B2 JP 2013222969 A JP2013222969 A JP 2013222969A JP 2013222969 A JP2013222969 A JP 2013222969A JP 6171844 B2 JP6171844 B2 JP 6171844B2
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- 239000004065 semiconductor Substances 0.000 title claims description 65
- 229920005989 resin Polymers 0.000 claims description 82
- 239000011347 resin Substances 0.000 claims description 82
- 229920001296 polysiloxane Polymers 0.000 claims description 70
- 229920002379 silicone rubber Polymers 0.000 claims description 42
- 239000004945 silicone rubber Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 32
- 230000035515 penetration Effects 0.000 claims description 20
- 229920002050 silicone resin Polymers 0.000 claims description 16
- -1 polydimethylsiloxane structure Polymers 0.000 claims description 5
- 230000006866 deterioration Effects 0.000 description 21
- 238000001723 curing Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000013500 performance material Substances 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 229920005601 base polymer Polymers 0.000 description 6
- 239000004734 Polyphenylene sulfide Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 230000003993 interaction Effects 0.000 description 5
- 229920000069 polyphenylene sulfide Polymers 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000013006 addition curing Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
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- H—ELECTRICITY
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Ceramic Engineering (AREA)
Description
IGBTチップ2と絶縁基板3の導電層3bとは、はんだ4により接合されている。また、絶縁基板3の導電層3cに対向させて金属基板5が設けられている。この絶縁基板3の導電層3cと金属基板5とは、はんだ4により接合されている。金属基板5の周縁に、樹脂ケース6が接着剤(図示せず)により固定されている。
シリコーンゲル11は、硬化後の針入度がJIS K2220準拠で20〜120(1/10mm)であることが好ましい。針入度が20に満たないと金属ワイヤ9の材料、線径にもよるが、金属ワイヤ9が断線し易くなり、信頼性を確保するのが難しくなる。また、針入度が120を超えると形状安定性に劣り、また、機械的強度が低下するのでクラックが発生し易くなってしまう。
モメンティブ・パフォーマンス・マテリアルズ社製TSE325(付加硬化型シリコーンゴム)を厚さ3.0mmで形成した。
(実施例2)
モメンティブ・パフォーマンス・マテリアルズ社製TSE325(付加硬化型シリコーンゴム)を厚さ1.5mmで形成した。
(実施例3)
モメンティブ・パフォーマンス・マテリアルズ社製TSE325(付加硬化型シリコーンゴム)を厚さ1.0mmで形成した。
(実施例4)
モメンティブ・パフォーマンス・マテリアルズ社製TSE325(付加硬化型シリコーンゴム)を厚さ0.5mmで形成した。
(実施例5)
モメンティブ・パフォーマンス・マテリアルズ社製TSE325(付加硬化型シリコーンゴム)を厚さ0.3mmで形成した。
(実施例6)
モメンティブ・パフォーマンス・マテリアルズ社製TSE325(付加硬化型シリコーンゴム)を厚さ0.1mmで形成した。
(比較例1)
シリコーンゴムを塗布・硬化しなかった。すなわち、シリコーンゴムシートの厚さは0mmであった。
2 IGBTチップ
3 絶縁基板
4 はんだ
5 金属基板
6 樹脂ケース
8 外部取り出し用金属端子
9 金属ワイヤ
10 蓋
11 シリコーンゲル
12 シート
Claims (5)
- パワー半導体素子と、該パワー半導体素子が搭載された絶縁基板と、該パワー半導体素子及び該絶縁基板が収容された樹脂ケースと、該樹脂ケース内に注入されたシリコーンゲルと、該樹脂ケース内で該樹脂ケース及び該シリコーンゲルの間に設けられ、シリコーンゴム又はシリコーン樹脂よりなるシートと、を備えることを特徴とするパワー半導体モジュール。
- 前記シリコーンゲルが、ポリジメチルシロキサン構造を主骨格とし、硬化後の針入度がJIS K2220準拠で20〜120(1/10mm)である請求項1記載のパワー半導体モジュール。
- 前記シリコーンゴム又はシリコーン樹脂よりなるシートが、JIS A硬度で38以下である請求項1又は2記載のパワー半導体モジュール。
- 前記シリコーンゴム又はシリコーン樹脂よりなるシートの厚さが0.5mm以上である請求項1記載のパワー半導体モジュール。
- 前記シリコーンゴム又はシリコーン樹脂よりなるシートが、前記樹脂ケースの内側の側面に形成されている請求項1記載のパワー半導体モジュール。
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JP2013222969A JP6171844B2 (ja) | 2013-10-28 | 2013-10-28 | パワー半導体モジュール |
US14/512,372 US9123639B2 (en) | 2013-10-28 | 2014-10-10 | Power semiconductor module |
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JP2013222969A JP6171844B2 (ja) | 2013-10-28 | 2013-10-28 | パワー半導体モジュール |
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JP2015088499A JP2015088499A (ja) | 2015-05-07 |
JP6171844B2 true JP6171844B2 (ja) | 2017-08-02 |
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JP (1) | JP6171844B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6540326B2 (ja) * | 2015-07-24 | 2019-07-10 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP6525327B2 (ja) * | 2016-02-26 | 2019-06-05 | 三菱電機株式会社 | パワー半導体モジュール及びその製造方法 |
JP6907697B2 (ja) * | 2017-05-18 | 2021-07-21 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US11081422B2 (en) | 2019-03-14 | 2021-08-03 | Toyota Motor Engineering & Manufacturing North America, Inc. | Self-healing PDMS encapsulation and repair of power modules |
WO2021176540A1 (ja) * | 2020-03-03 | 2021-09-10 | 三菱電機株式会社 | パワー半導体装置 |
CN113257744B (zh) * | 2021-04-22 | 2022-04-15 | 东莞市柏尔电子科技有限公司 | 一种防水稳定的三极管及制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61101056A (ja) | 1984-10-24 | 1986-05-19 | Hitachi Micro Comput Eng Ltd | 半導体装置 |
JPH04109550U (ja) | 1991-03-07 | 1992-09-22 | シヤープ株式会社 | 電力半導体装置 |
JP2913247B2 (ja) | 1993-08-11 | 1999-06-28 | 株式会社日立製作所 | パワー半導体モジュール及び車両用インバータ装置 |
JP2003243610A (ja) * | 2002-02-19 | 2003-08-29 | Hitachi Ltd | 絶縁型半導体装置 |
JP4374941B2 (ja) * | 2003-08-04 | 2009-12-02 | 三菱電機株式会社 | インバータ装置 |
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2013
- 2013-10-28 JP JP2013222969A patent/JP6171844B2/ja active Active
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2014
- 2014-10-10 US US14/512,372 patent/US9123639B2/en active Active
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US20150115428A1 (en) | 2015-04-30 |
US9123639B2 (en) | 2015-09-01 |
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