JP2009194327A - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
- Publication number
- JP2009194327A JP2009194327A JP2008036320A JP2008036320A JP2009194327A JP 2009194327 A JP2009194327 A JP 2009194327A JP 2008036320 A JP2008036320 A JP 2008036320A JP 2008036320 A JP2008036320 A JP 2008036320A JP 2009194327 A JP2009194327 A JP 2009194327A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- resin
- heat sink
- semiconductor device
- power semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
【解決手段】電力用半導体装置50では、所定の厚さの放熱板6の一方の主表面上に、IGBT4およびFWDi5を含む回路が形成されている。放熱板6上に形成された回路は、放熱板6の他方の主表面を露出する態様で成型された樹脂筐体1によって封止されている。放熱板6の外周部に沿って樹脂枠13が形成されている。樹脂枠13には、絶縁層12に接触している部分よりも高いに位置において、絶縁層に接触している部分の断面方向の幅よりも幅の広い部分が形成されている。
【選択図】図3
Description
図1、図2および図3に示すように、電力用半導体装置50では、所定の厚さの放熱板6の一方の主表面上に、半導体素子としてIGBT(Insulated Gate Bipolar Transistor)4およびFWDi(Free Wheel Diode)5を含む回路が形成されている。図3に示すように、その放熱板6上に形成された回路は、放熱板6の他方の主表面を露出する態様で成型された樹脂筐体1によって封止されている。樹脂筐体1は、たとえば、ガラス繊維を配合することによって強度を向上させたガラス繊維強化のPPSからなり、電力用半導体装置50の外形をなす。
ここでは、樹脂枠の配設位置のバリエーションについて説明する。図9に示すように、この電力用半導体装置50では、樹脂枠13は、放熱板6の主表面(絶縁層12)と端面とに接触するように、放熱板6の外周角部に形成されている。なお、これ以外の構成については図3等に示す電力用半導体装置50と同様なので同一部材には同一符号を付し、その説明を省略する。
ここでは、絶縁層のバリエーションについて説明する。図12に示すように、この電力用半導体装置50では、絶縁層12は厚さ約0.5mmのアルミナセラミックスによって構成される。その絶縁層12の表面には、厚さ約0.3mmの銅パターン9aが活性金属ろう材などによって接続されている。一方、絶縁層12の裏面にも、厚さ約0.3mmの銅パターン9bが接続されている。その銅パターン9bが、たとえばSn−Ag−Cu系のはんだ15によって放熱板6に接続されている。
ここでは、樹脂枠のバリエーションについて説明する。図16および図17に示すように、この電力用半導体装置50では、樹脂枠13は、熱可塑性樹脂であるPPSから形成されて、熱硬化性樹脂であるエポキシ系の接着層14によって放熱板6(絶縁層12)に固着されている。なお、これ以外に構成については、図3に示す電力用半導体装置50と同様なので同一部材には同一符号を付し、その説明を省略する。
Claims (10)
- 所定の厚さを有し、互いに対向する第1主表面および第2主表面を有する放熱板と、
前記放熱板の前記第1主表面上に形成された絶縁層と、
前記絶縁層上に形成された、所定の半導体素子を含む回路部と、
前記絶縁層上において、前記回路部を取り囲むように形成された樹脂枠と、
前記放熱板の前記第2主表面を露出する態様で、前記放熱板、前記絶縁層、前記回路部および前記樹脂枠を封止する樹脂筐体と
を有し、
前記樹脂枠は、
断面方向に所定の幅を有して前記絶縁層に接触する接触部と、
前記接触部よりも高い部分に位置し、前記断面方向に前記所定の幅よりも広い幅を有する幅広部と
を備えた、電力用半導体装置。 - 前記回路部は前記絶縁層によって前記放熱板に固着された、請求項1記載の電力用半導体装置。
- 前記樹脂枠は熱硬化性樹脂であり、
前記樹脂筐体は熱可塑性樹脂である、請求項1または2に記載の電力用半導体装置。 - 所定の厚さを有し、互いに対向する第1主表面および第2主表面を有する放熱板と、
前記放熱板の前記第1主表面上に形成された絶縁層と、
前記絶縁層上に形成された、所定の半導体素子を含む回路部と、
前記回路部を取り囲む態様で、前記絶縁層の表面と前記放熱板の厚さ方向の端面とが交差する外周角部を覆うように形成された樹脂枠と、
前記放熱板の前記第2主表面を露出する態様で、前記放熱板、前記絶縁層、前記回路部および前記樹脂枠を封止する樹脂筐体と
を備えた、電力用半導体装置。 - 前記樹脂枠は、前記放熱板の前記端面上に形成され、前記絶縁層の前記表面の外周端から前記絶縁層の表面が延在する方向に張出すように形成された張出し部を含む、請求項4記載の電力用半導体装置。
- 前記回路部は前記絶縁層によって前記放熱板に固着された、請求項4また5に記載の電力用半導体装置。
- 前記絶縁層ははんだによって前記放熱板に固着された、請求項4または5に記載の電力用半導体装置。
- 前記樹脂枠は熱硬化性樹脂であり、
前記樹脂筐体は熱可塑性樹脂である、請求項4〜7のいずれかに記載の電力用半導体装置。 - 所定の厚さを有し、互いに対向する第1主表面および第2主表面を有する放熱板と、
前記放熱板の前記第1主表面上に形成された絶縁層と、
前記絶縁層上に形成された、所定の半導体素子を含む回路部と、
前記絶縁層上において、前記回路部を取り囲むように形成された熱可塑性の樹脂枠と、
前記樹脂枠を前記絶縁層に固着する熱硬化性の接着層と、
前記放熱板の前記第2主表面を露出する態様で、前記放熱板、前記絶縁層、前記回路部、前記接着層および前記樹脂枠を封止する熱可塑性の樹脂筐体と
を備えた、電力用半導体装置。 - 前記樹脂枠は尖端部を含む、請求項9記載の電力用半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008036320A JP5071719B2 (ja) | 2008-02-18 | 2008-02-18 | 電力用半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008036320A JP5071719B2 (ja) | 2008-02-18 | 2008-02-18 | 電力用半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009194327A true JP2009194327A (ja) | 2009-08-27 |
JP5071719B2 JP5071719B2 (ja) | 2012-11-14 |
Family
ID=41076041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008036320A Active JP5071719B2 (ja) | 2008-02-18 | 2008-02-18 | 電力用半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5071719B2 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010123914A (ja) * | 2008-10-20 | 2010-06-03 | Denso Corp | 電子制御装置 |
JP2010199516A (ja) * | 2009-02-27 | 2010-09-09 | Denso Corp | 電子装置 |
JP2012023233A (ja) * | 2010-07-15 | 2012-02-02 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
WO2014122908A1 (ja) * | 2013-02-05 | 2014-08-14 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP2015195415A (ja) * | 2015-08-10 | 2015-11-05 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
US9466548B2 (en) | 2012-02-22 | 2016-10-11 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing semiconductor device |
JP2017063105A (ja) * | 2015-09-24 | 2017-03-30 | トヨタ自動車株式会社 | 半導体モジュール |
WO2021151949A1 (en) | 2020-01-30 | 2021-08-05 | Abb Power Grids Switzerland Ag | Power semiconductor module with accessible metal clips |
WO2022209765A1 (ja) * | 2021-03-29 | 2022-10-06 | 株式会社富士通ゼネラル | 電動機 |
WO2023175823A1 (ja) * | 2022-03-17 | 2023-09-21 | 三菱電機株式会社 | 半導体装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11340374A (ja) * | 1998-05-28 | 1999-12-10 | Hitachi Ltd | 半導体装置 |
JP2003318333A (ja) * | 2002-04-24 | 2003-11-07 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2003318334A (ja) * | 2002-04-24 | 2003-11-07 | Sanyo Electric Co Ltd | 混成集積回路装置 |
-
2008
- 2008-02-18 JP JP2008036320A patent/JP5071719B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11340374A (ja) * | 1998-05-28 | 1999-12-10 | Hitachi Ltd | 半導体装置 |
JP2003318333A (ja) * | 2002-04-24 | 2003-11-07 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2003318334A (ja) * | 2002-04-24 | 2003-11-07 | Sanyo Electric Co Ltd | 混成集積回路装置 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010123914A (ja) * | 2008-10-20 | 2010-06-03 | Denso Corp | 電子制御装置 |
JP2010199516A (ja) * | 2009-02-27 | 2010-09-09 | Denso Corp | 電子装置 |
JP2012023233A (ja) * | 2010-07-15 | 2012-02-02 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
US9466548B2 (en) | 2012-02-22 | 2016-10-11 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing semiconductor device |
US9640460B2 (en) | 2013-02-05 | 2017-05-02 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device with a heat-dissipating plate |
WO2014122908A1 (ja) * | 2013-02-05 | 2014-08-14 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP2015195415A (ja) * | 2015-08-10 | 2015-11-05 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2017063105A (ja) * | 2015-09-24 | 2017-03-30 | トヨタ自動車株式会社 | 半導体モジュール |
WO2021151949A1 (en) | 2020-01-30 | 2021-08-05 | Abb Power Grids Switzerland Ag | Power semiconductor module with accessible metal clips |
WO2022209765A1 (ja) * | 2021-03-29 | 2022-10-06 | 株式会社富士通ゼネラル | 電動機 |
JP2022152646A (ja) * | 2021-03-29 | 2022-10-12 | 株式会社富士通ゼネラル | 電動機 |
JP7255622B2 (ja) | 2021-03-29 | 2023-04-11 | 株式会社富士通ゼネラル | 電動機 |
WO2023175823A1 (ja) * | 2022-03-17 | 2023-09-21 | 三菱電機株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5071719B2 (ja) | 2012-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5071719B2 (ja) | 電力用半導体装置 | |
JP4455488B2 (ja) | 半導体装置 | |
JP5602077B2 (ja) | 半導体装置 | |
US9991220B2 (en) | Semiconductor device | |
JP4254527B2 (ja) | 半導体装置 | |
US10163752B2 (en) | Semiconductor device | |
KR102231769B1 (ko) | 고열전도를 위한 히트싱크 노출형 반도체 패키지 및 그 제조방법 | |
US9466542B2 (en) | Semiconductor device | |
JP4146785B2 (ja) | 電力用半導体装置 | |
JP6057927B2 (ja) | 半導体装置 | |
JP2006066813A (ja) | 半導体装置 | |
JP4967701B2 (ja) | 電力半導体装置 | |
JP2008263210A (ja) | 電力用半導体装置 | |
JP2005167075A (ja) | 半導体装置 | |
JP6095303B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2010050395A (ja) | 半導体装置およびその製造方法 | |
US8686545B2 (en) | Semiconductor device and method for manufacturing the same | |
JP6157320B2 (ja) | 電力用半導体装置、電力用半導体モジュール、および電力用半導体装置の製造方法 | |
JP4861200B2 (ja) | パワーモジュール | |
JP2021027150A (ja) | 半導体装置 | |
JP7494521B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
JP4258391B2 (ja) | 半導体装置 | |
JP4055700B2 (ja) | 半導体装置 | |
US11581229B2 (en) | Power semiconductor module with adhesive filled tapered portion | |
JP2009277959A (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100520 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100928 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120724 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120808 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5071719 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150831 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |