JP6869594B2 - 透明発光素子ディスプレイ用電極基板およびその製造方法 - Google Patents
透明発光素子ディスプレイ用電極基板およびその製造方法 Download PDFInfo
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Description
本出願は、透明発光素子ディスプレイ用電極基板およびその製造方法に関する。
透明基板と、
前記透明基板上に備えられ、メタルメッシュパターンを含む配線電極部と、
前記透明基板上に備えられる少なくとも1つの発光素子実装部とを含み、
前記配線電極部のメタルメッシュパターンの上部面および側面ともに黒化層パターンを含み、
前記発光素子実装部の上部面および側面ともに黒化層パターンを含まない透明発光素子ディスプレイ用電極基板を提供する。
透明基板と、前記透明基板上に備えられ、メタルメッシュパターンを含む配線電極部と、前記透明基板上に備えられる少なくとも1つの発光素子実装部とを含む電極基板を用意するステップと、
前記少なくとも1つの発光素子実装部の上部面および側面ともにレジストパターンを形成するステップと、
前記配線電極部のメタルメッシュパターンの上部面および側面ともに黒化層パターンを形成するステップと、
前記レジストパターンを除去するステップとを含む透明発光素子ディスプレイ用電極基板の製造方法を提供する。
本出願において、「透明」とは、可視光線領域(400nm〜700nm)で約80%以上の透過率特性を有することを意味するものとする。
本出願において、前記第1共通電極配線部は、(+)共通電極配線部であり、前記第2共通電極配線部は、(−)共通電極配線部であってもよい。また、前記第1共通電極配線部は、(−)共通電極配線部であり、前記第2共通電極配線部は、(+)共通電極配線部であってもよい。
<比較例1>
250μmの厚さのPETフィルム上に、電解メッキ工程により銅を8μmの厚さに蒸着した。前記蒸着基材の上部にリバースオフセット印刷工程によりレジストパターンを形成した。10%濃度の塩化第二鉄系銅エッチング液およびスプレーエッチング設備を活用してレジストパターンが備えられていない領域の銅を除去した。NaOH1wt%水溶液を用いて残存するレジストパターンを除去することにより、電極基板を製造した。
前記比較例1の電極基板を、YMT社の銅黒化処理剤のYBM−100を超純水で10%濃度に希釈した溶液に常温で30秒間浸漬した後、水洗および乾燥工程を進行させた。これによって、全面黒化工程が完了した電極基板を製造した。
前記比較例1の電極基板上に、レジストペーストをスクリーンプリンティング方法を利用して発光素子実装部に選択的に印刷した。前記スクリーンプリンティング用レジストは、重量平均分子量が10,000g/molのクレゾールノボラック樹脂40gとTego社の界面活性剤Glide−410 0.1gをPGMEA59.9gに溶解して製造した。
前記実施例1および比較例1〜2の電極基板の特性を評価して、下記表1に示した。
下記の発光素子実装部パターンのソルダー付着力は、下記のように評価した。前記発光素子実装部パターンにスクリーンプリンティングを利用してソルダーペーストパターンを形成し、150℃、5分間電極基板を熱処理した。その後、3M Magic Tape Testにより前記発光素子実装部パターンで脱着されたソルダーペーストパターンの個数を測定した。計20個のソルダーペーストパターンを基準として脱着されたパターンの個数が0個のときはOK、3個以上のときはNGと評価した。前記実施例1の熱処理後のソルダーの形状および付着評価後の写真を下記の図8に示し、比較例2の熱処理後のソルダーの形状および付着評価後の写真を下記の図9に示した。下記の図9の結果のように、比較例2では、付着評価後、ソルダーが脱離する現象を確認することができた。
20:配線電極部
30:発光素子実装部
40:黒化層パターン
50:レジストパターン
60:発光素子
70:ソルダー(solder)
80:第1共通電極配線部
90:第2共通電極配線部
100:電源印加部
110:信号電極配線部
120:断線部
130:メタルメッシュパターン
140:メタルメッシュパターンの線幅
150:メタルメッシュパターンの線高さ
160:メタルメッシュパターンのピッチ
Claims (11)
- 透明基板と、
前記透明基板上に備えられ、メタルメッシュパターンを含む配線電極部と、
前記透明基板上に備えられる少なくとも1つの発光素子実装部とを含み、
前記配線電極部のメタルメッシュパターンの上部面および側面ともに黒化層パターンを含み、
前記発光素子実装部の上部面および側面ともに黒化層パターンを含まず、
前記配線電極部は、第1共通電極配線部、第2共通電極配線部、および信号電極配線部を含み、
前記信号電極配線部は、第1共通電極配線部と第2共通電極配線部との間に設けられ、
前記第1共通電極配線部、第2共通電極配線部、および信号電極配線部はいずれも、線幅、線高さおよびピッチが同一のメタルメッシュパターンを含み、
前記メタルメッシュパターンは、前記発光素子実装部を除いた透明基板上の有効画面部の全領域に備えられるものである、透明発光素子ディスプレイ用電極基板。 - 前記メタルメッシュパターンの線幅は25μm以下であり、ピッチは100μm〜1,000μmであり、線高さは3μm以上である、請求項1に記載の透明発光素子ディスプレイ用電極基板。
- 前記第1共通電極配線部、第2共通電極配線部、および信号電極配線部のメタルメッシュパターンはそれぞれ、断線部によって互いに分離され、
前記断線部の幅は、80μm以下である、請求項1又は2に記載の透明発光素子ディスプレイ用電極基板。 - 前記配線電極部および前記発光素子実装部はそれぞれ独立して、金、銀、アルミニウム、銅、ネオジム、モリブデン、ニッケル、またはこれらの合金を含むものである、請求項1から3のいずれか一項に記載の透明発光素子ディスプレイ用電極基板。
- 前記発光素子実装部は、前記第1共通電極配線部、第2共通電極配線部、および信号電極配線部と電気的に連結される少なくとも4つの電極パッド部を含むものである、請求項1から4のいずれか一項に記載の透明発光素子ディスプレイ用電極基板。
- 前記少なくとも4つの電極パッド部は、2つの信号電極パッド部、1つの第1共通電極パッド部、および1つの第2共通電極パッド部を含むものである、請求項5に記載の透明発光素子ディスプレイ用電極基板。
- 透明基板と、前記透明基板上に備えられ、メタルメッシュパターンを含む配線電極部と、前記透明基板上に備えられる少なくとも1つの発光素子実装部とを含む電極基板を用意するステップと、
前記少なくとも1つの発光素子実装部の上部面および側面ともにレジストパターンを形成するステップと、
前記配線電極部のメタルメッシュパターンの上部面および側面ともに黒化層パターンを形成するステップと、
前記レジストパターンを除去するステップとを含み、
前記配線電極部は、第1共通電極配線部、第2共通電極配線部、および信号電極配線部を含み、
前記信号電極配線部は、第1共通電極配線部と第2共通電極配線部との間に設けられ、
前記第1共通電極配線部、第2共通電極配線部、および信号電極配線部はいずれも、線幅、線高さおよびピッチが同一のメタルメッシュパターンを含み、
前記メタルメッシュパターンは、前記発光素子実装部を除いた透明基板上の有効画面部の全領域に備えられるものである、透明発光素子ディスプレイ用電極基板の製造方法。 - 前記レジストパターンを形成するステップは、フォトリソグラフィ、インクジェットプリンティング、またはスクリーンプリンティング方法で行われるものである、請求項7に記載の透明発光素子ディスプレイ用電極基板の製造方法。
- 前記レジストパターンは、クレゾールノボラック樹脂、フェノールノボラック樹脂、エポキシフェノールノボラック樹脂、およびポリヒドロキシスチレン樹脂のうちの1種以上を含むものである、請求項7または8に記載の透明発光素子ディスプレイ用電極基板の製造方法。
- 前記黒化層パターンを形成するステップは、銅、セレン、コバルト、ニッケル、マンガン、マグネシウム、ナトリウム、これらの酸化物およびこれらの水酸化物のうちの1種以上を含むメッキ溶液を用いたメッキ工程により行われるものである、請求項7から9のいずれか一項に記載の透明発光素子ディスプレイ用電極基板の製造方法。
- 請求項1〜6のいずれか1項に記載の透明発光素子ディスプレイ用電極基板を含む透明発光素子ディスプレイ。
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