JP6867028B2 - パターン露光方法及びパターン露光装置 - Google Patents
パターン露光方法及びパターン露光装置 Download PDFInfo
- Publication number
- JP6867028B2 JP6867028B2 JP2017180415A JP2017180415A JP6867028B2 JP 6867028 B2 JP6867028 B2 JP 6867028B2 JP 2017180415 A JP2017180415 A JP 2017180415A JP 2017180415 A JP2017180415 A JP 2017180415A JP 6867028 B2 JP6867028 B2 JP 6867028B2
- Authority
- JP
- Japan
- Prior art keywords
- unit
- region
- image data
- light beam
- integrated intensity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 27
- 238000012937 correction Methods 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000000638 solvent extraction Methods 0.000 claims 1
- 238000011161 development Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
5:制御部,6:データ補正部,W:ワーク
Claims (5)
- 露光画像データに基づいて、光ビームをオン・オフ制御すると共に走査して、露光面上にパターンを描画するパターン露光方法であって、
前記露光面上に光ビームの最小露光単位を区画し、前記露光画像データにおける補正に必要な光ビームのオン領域を前記最小露光単位の集合で特定する工程と、
前記光ビームの強度分布を前記オン領域内の最小露光単位毎に積算し、前記オン領域における積算強度分布を求める工程と、
前記積算強度分布を設定された閾値と比較して、前記積算強度分布が前記閾値と一致する点を前記露光面上で連ねた輪郭を積算強度輪郭として求める工程と、
前記オン領域の外縁と前記積算強度輪郭とで囲まれた差分面積が小さくなるように、前記オン領域の外側に前記最小露光単位毎に光ビームをオンにするオン単位を設定して、前記露光画像データを補正することを特徴とするパターン露光方法。 - 前記オン単位が、前記露光画像データにおける平面的な角部の近傍に設定されることを特徴とする請求項1記載のパターン露光方法。
- 前記オン単位を仮設定し、仮設定した前記オン単位が影響する領域のみ新たに前記積算強度輪郭を求め、前記差分面積が小さくなる場合に、仮設定した前記オン単位の設定を確定することを特徴とする請求項1又は2記載のパターン露光方法。
- 前記オン単位は、前記オン領域の外縁の外側に前記積算強度輪郭が出るはみ出し量を抑制するように設定されることを特徴とする請求項1〜3のいずれか1項に記載のパターン露光方法。
- 露光画像データに基づいて、光ビームをオン・オフ制御すると共に走査して、露光面上にパターンを描画するパターン露光装置であって、
前記露光画像データを補正するデータ補正部を備え、
該データ補正部は、
前記露光面上に光ビームの最小露光単位を区画し、前記露光画像データにおける補正に必要な光ビームのオン領域を前記最小露光単位の集合で特定する演算処理部と、
前記光ビームの強度分布を前記オン領域内の最小露光単位毎に積算し、前記オン領域における積算強度分布を求める演算処理部と、
前記積算強度分布を設定された閾値と比較して、前記積算強度分布が前記閾値と一致する点を前記露光面上で連ねた輪郭を積算強度輪郭として求める演算処理部と、
前記オン領域の外縁と前記積算強度輪郭とで囲まれた差分面積が小さくなるように、前記オン領域の外側に前記最小露光単位毎に光ビームをオンにするオン単位を設定して、前記露光画像データを補正する演算処理部を備えることを特徴とするパターン露光装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017180415A JP6867028B2 (ja) | 2017-09-20 | 2017-09-20 | パターン露光方法及びパターン露光装置 |
TW107131234A TWI762714B (zh) | 2017-09-20 | 2018-09-06 | 圖案曝光方法及圖案曝光裝置 |
CN201880055472.3A CN111263919B (zh) | 2017-09-20 | 2018-10-03 | 图案曝光方法及图案曝光装置 |
KR1020207006427A KR102509752B1 (ko) | 2017-09-20 | 2018-10-03 | 패턴 노광 방법 및 패턴 노광 장치 |
PCT/JP2018/037102 WO2019059420A1 (ja) | 2017-09-20 | 2018-10-03 | パターン露光方法及びパターン露光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017180415A JP6867028B2 (ja) | 2017-09-20 | 2017-09-20 | パターン露光方法及びパターン露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019056761A JP2019056761A (ja) | 2019-04-11 |
JP6867028B2 true JP6867028B2 (ja) | 2021-04-28 |
Family
ID=65810448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017180415A Active JP6867028B2 (ja) | 2017-09-20 | 2017-09-20 | パターン露光方法及びパターン露光装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6867028B2 (ja) |
KR (1) | KR102509752B1 (ja) |
CN (1) | CN111263919B (ja) |
TW (1) | TWI762714B (ja) |
WO (1) | WO2019059420A1 (ja) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08250402A (ja) * | 1995-03-15 | 1996-09-27 | Nikon Corp | 走査型露光方法及び装置 |
JP2007517239A (ja) * | 2003-11-12 | 2007-06-28 | マイクロニック レーザー システムズ アクチボラゲット | Slmスタンプ像の欠陥を修正する方法及び装置 |
JP2005322855A (ja) | 2004-05-11 | 2005-11-17 | Nikon Corp | 光強度分布の評価方法、調整方法、照明光学装置、露光装置、および露光方法 |
JP4532381B2 (ja) * | 2005-09-30 | 2010-08-25 | 富士フイルム株式会社 | 描画方法および装置 |
KR100788866B1 (ko) | 2006-03-17 | 2008-01-04 | 박성인 | 지반 시추용 코어 배럴 어셈블리를 이용한 지반 시추 코어 시료 채취 방법 |
US7902528B2 (en) * | 2006-11-21 | 2011-03-08 | Cadence Design Systems, Inc. | Method and system for proximity effect and dose correction for a particle beam writing device |
JP5414281B2 (ja) * | 2009-01-05 | 2014-02-12 | 大日本スクリーン製造株式会社 | 露光装置および露光方法 |
US8601407B2 (en) * | 2011-08-25 | 2013-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Geometric pattern data quality verification for maskless lithography |
JP2014096471A (ja) * | 2012-11-09 | 2014-05-22 | Nikon Corp | 計測方法及び装置、照明方法及び装置、並びに露光方法及び装置 |
KR20170105247A (ko) * | 2016-03-09 | 2017-09-19 | 삼성전자주식회사 | 마스크리스 노광 장치 및 이를 이용한 누적 광량의 측정 방법 |
-
2017
- 2017-09-20 JP JP2017180415A patent/JP6867028B2/ja active Active
-
2018
- 2018-09-06 TW TW107131234A patent/TWI762714B/zh active
- 2018-10-03 WO PCT/JP2018/037102 patent/WO2019059420A1/ja active Application Filing
- 2018-10-03 CN CN201880055472.3A patent/CN111263919B/zh active Active
- 2018-10-03 KR KR1020207006427A patent/KR102509752B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20210053806A (ko) | 2021-05-12 |
WO2019059420A8 (ja) | 2019-07-11 |
TW201923471A (zh) | 2019-06-16 |
CN111263919A (zh) | 2020-06-09 |
CN111263919B (zh) | 2022-06-21 |
KR102509752B1 (ko) | 2023-03-14 |
TWI762714B (zh) | 2022-05-01 |
JP2019056761A (ja) | 2019-04-11 |
WO2019059420A1 (ja) | 2019-03-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107636535B (zh) | 将基于顶点的校正应用于半导体设计的方法 | |
US11037759B2 (en) | Multi charged particle beam writing apparatus and multi charged particle beam writing method | |
KR20150142900A (ko) | 전자빔을 이용한 노광 방법과 그 노광 방법을 이용한 마스크 및 반도체 소자 제조방법 | |
KR101621784B1 (ko) | 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법 | |
KR100455536B1 (ko) | 포토마스크의 수정 방법 및 반도체 장치의 제조 방법 | |
CN111095485B (zh) | 描绘数据生成方法、多带电粒子束描绘装置、图案检查装置、以及计算机可读取的记录介质 | |
JP2019075543A5 (ja) | ||
CN110737178B (zh) | 描绘数据生成方法、计算机可读记录介质及多带电粒子束描绘装置 | |
JP6867028B2 (ja) | パターン露光方法及びパターン露光装置 | |
JP2017139458A (ja) | 荷電粒子ビーム描画装置、荷電粒子ビーム描画システムおよび描画データ生成方法 | |
JP6342304B2 (ja) | データ補正装置、描画装置、検査装置、データ補正方法、描画方法、検査方法およびプログラム | |
TWI616924B (zh) | Method for adjusting charged particle beam drawing device and charged particle beam drawing method | |
TWI697744B (zh) | 帶電粒子束描繪裝置及帶電粒子束描繪方法 | |
KR20200042398A (ko) | 묘화 데이터 생성 방법 및 멀티 하전 입자 빔 묘화 장치 | |
US20200258715A1 (en) | Charged particle beam writing apparatus and charged particle beam writing method | |
US11749499B2 (en) | Data generation method and charged particle beam irradiation device | |
US10460909B2 (en) | Charged particle beam writing method and charged particle beam writing apparatus | |
US20230411115A1 (en) | Drawing apparatus, drawing method, and method of manufacturing plate | |
US11170976B2 (en) | Multi-beam writing method and multi-beam writing apparatus | |
US20150262791A1 (en) | Electron beam drawing method, electron beam drawing apparatus and data generating method | |
KR20230023578A (ko) | 데이터 생성 방법, 하전 입자 빔 조사 장치 및 컴퓨터 판독 가능한 기록 매체 | |
JP2013197244A (ja) | 電子線照射量決定方法 | |
JP2005235812A (ja) | 荷電粒子ビーム描画方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200611 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210302 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210305 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210330 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210401 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6867028 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |