JP6862106B2 - 電流制御装置及びレーザ装置 - Google Patents
電流制御装置及びレーザ装置 Download PDFInfo
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Description
前記電流指令部は、前記指令値を連続的に増加させてもよい。
前記電流指令部は、時間経過とともに前記指令値の増加量を減少させてもよい。
前記電流指令部は、時間経過とともに前記指令値の増加量を増大させてもよい。
前記電流制御装置は、前記電流の値を検出する検出部を更に備え、前記電流指令部は、検出された前記電流の値に基づいて前記指令値の増加量を変化させてもよい。
図1は、本実施形態に係るレーザ装置100の構成を示す図である。レーザ装置100は、532nmよう素安定化レーザである。レーザ装置100は、半導体レーザによって励起させられるNd:YV04結晶を利得媒質として用いた連続波発振の532nm領域の固体レーザであり、長さの標準として用いられる。レーザ装置100は、よう素分子の吸収線の分光技術を用いて、よう素分子の飽和吸収線の中心に発振波長を制御することで、高い波長安定度を得ることができる。
励起用半導体レーザ部1は、半導体レーザ11を有しており、半導体レーザ11より出射される808nm帯域の励起用レーザ光をレーザ共振器筺体2に入射する。
安定化信号検出部32は、吸収セルであるよう素セルを有しており、よう素セルを透過した波長制御用レーザ光L2に基づいた光出力信号をコントローラ4に入力する。
温度制御装置43は、制御対象である半導体レーザ11、KTP結晶22、エタロン23、及び安定化信号検出部32に隣接して設けられた温度センサが検出した温度に基づいて、各制御対象の固定ホルダに設置されたペルチェ素子等の変温装置を駆動し、各制御対象が目標温度になるように制御する。
電流制御部6は、オペアンプ61と、電流検出回路62とを有する。電流検出回路62は、半導体レーザ11に供給するレーザ電流の電流値を検出し、当該電流値に対応するレーザ電流検出電圧をオペアンプ61に入力する。オペアンプ61は、制御指令電圧と、レーザ電流検出電圧とが一致するようにレーザ電流を制御する。
このように、電流制御装置42は、指令値をステップ的に増加させることにより、従来のレーザ装置のように矩形波状の指令値を一度に出力する場合に比べて出射パワーのオーバーシュートを低減することができる。
なお、上述の実施形態では、電流指令部5は、指令値を段階的に増加させて出力することとしたが、これに限らない。電流指令部5は、指令値を連続的に増加させて出力してもよい。例えば、目標指令値をI1、到達時間をT1とした場合に、電流指令部5は、1秒当たりの指令値の増加量が、I1/T1となるように、指令値を連続的に増加させて出力する。ここで、到達時間T1は、温度制御装置43によるKTP結晶22の温度制御にかかる時間よりも長い時間であるものとする。
以上説明したように、本実施形態に係る電流制御装置42は、所定の強さのレーザ光を出力するためのレーザ電流の電流値に対応する目標指令値に達するまで、レーザ電流の電流値に対応する指令値を時間経過とともに増加させ、当該指令値に対応する大きさの電流を半導体レーザ11に供給する。このようにすることで、電流制御装置42は、レーザ装置100の起動直後の過渡状態における出射パワーのオーバーシュートを抑制することができるので、レーザ装置100の出射パワーを所定のクラス内に抑制することができる。
2 レーザ共振器筺体
3 よう素安定化用光学系
4 コントローラ
5 電流指令部
6 電流制御部
7 電流駆動部
11 半導体レーザ
21 Nd:YV04結晶
22 KTP結晶
23 エタロン
24 反射鏡
25 ピエゾ素子
31 ビームスプリッタ
32 安定化信号検出部
42 電流制御装置
43 温度制御装置
44 電圧制御装置
100 レーザ装置
Claims (6)
- 半導体レーザにレーザ光を出力させるために、前記半導体レーザに電流を供給する電流制御装置であって、
所定の強さの前記レーザ光を出力するための電流値に対応する目標指令値に達するまで、前記電流の値に対応する指令値を時間経過とともに増加させて出力する電流指令部と、
前記電流指令部が出力した前記指令値に対応する大きさの電流を前記半導体レーザに供給する供給部と、
を備え、
前記電流指令部は、前記電流の値とレーザ光の出射パワーとの関係を示す情報と、前記指令値の増加量と前記半導体レーザの出射パワーのオーバーシュートの量との関係を示す情報とを参照し、前記出射パワーが予め規定されている出射パワーを超えないように前記指令値の増加量を変化させる、
電流制御装置。 - 前記電流指令部は、前記指令値を段階的に増加させる、
請求項1に記載の電流制御装置。 - 前記電流指令部は、時間経過とともに前記指令値の増加量を減少させる、
請求項1又は2に記載の電流制御装置。 - 前記電流指令部は、時間経過とともに前記指令値の増加量を増大させる、
請求項1又は2に記載の電流制御装置。 - 前記電流の値を検出する検出部を更に備え、
前記電流指令部は、検出された前記電流の値に基づいて前記指令値の増加量を変化させる、
請求項1から4のいずれか1項に記載の電流制御装置。 - 請求項1から5のいずれか1項に記載の電流制御装置と、前記半導体レーザと、前記半導体レーザから出力されたレーザ光を、当該レーザ光の周波数とは異なる周波数のレーザ光に変換する非線形光学結晶と、前記非線形光学結晶の温度を制御する温度制御装置とを備えたレーザ装置であって、
前記電流指令部は、前記温度制御装置による前記非線形光学結晶の温度制御にかかる時間よりも長い時間であって、複数の段階における前記指令値に対応して前記供給部が前記電流を前記半導体レーザに供給した場合に前記オーバーシュートが収まる時間と、前記段階の数との積よりも長い時間にわたって、前記指令値を時間経過とともに段階的に増加させて出力する、
レーザ装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016126370A JP6862106B2 (ja) | 2016-06-27 | 2016-06-27 | 電流制御装置及びレーザ装置 |
US15/625,241 US10170885B2 (en) | 2016-06-27 | 2017-06-16 | Current control device and laser device |
CN201710501990.0A CN107546570B (zh) | 2016-06-27 | 2017-06-27 | 电流控制装置和激光器装置 |
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JPH03169155A (ja) * | 1989-11-28 | 1991-07-22 | Fujitsu Ltd | レーザダイオードの駆動回路 |
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JP3716355B2 (ja) * | 1996-03-18 | 2005-11-16 | 株式会社トプコン | レーザー装置及びレーザー装置制御方法 |
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JP2011044545A (ja) * | 2009-08-20 | 2011-03-03 | Sony Corp | 光射出装置、光射出装置の温度制御方法、表示装置、および光照射装置 |
JP5706680B2 (ja) | 2010-12-22 | 2015-04-22 | 株式会社ミツトヨ | 安定化判別器、レーザ周波数安定化装置、及び安定化判別方法 |
US8953652B2 (en) * | 2011-01-31 | 2015-02-10 | Ipg Photonics Corporation | Method and apparatus for differentially controlling population inversion in gain medium |
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