JP6840061B2 - 基板保持装置および基板処理装置 - Google Patents
基板保持装置および基板処理装置 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Description
図1は、基板処理装置100の構成の一例を概略的に示す図である。基板処理装置100は基板Wに対する処理を行う装置である。基板Wは例えば半導体基板であって、平面視で円形の形状を有する板状の基板である。但し、基板Wはこれに限らず、例えば液晶などの表示パネル用の基板であって、平面視で矩形状の形状を有する板状の基板であってもよい。
図2は、基板保持装置1の構成の一例を概略的に示す平面図であり、図3は、基板保持装置1の構成の一例を概略的に示す断面図である。
図5は、基板処理装置100の動作の一例を示すフローチャートである。まずステップS1にて、基板Wが保持部材10の上に配置される。具体的には、制御部50は筐体70のシャッタを開いた上で、基板搬送ロボットに基板Wを基板処理装置100へと搬入させる。即ち基板搬送ロボットは、基板Wを載置したハンドを、搬出入口を介して筐体70の内部へと移動させて、保持部材10の上に基板Wを配置する。これにより、保持部材10は基板Wを保持する。その後、制御部50は基板搬送ロボットのハンドを筐体70の外部へと移動させた上で、シャッタを閉じる。
上述の変速機構40はリング部材20を保持部材10とは反対方向に回転させた。しかしながら、必ずしもこれに限らない。変速機構40はリング部材20を保持部材10と同じ方向に回転させてもよい。
上述の例では、基板処理装置100は1種類の処理液を基板Wに供給したが、必ずしもこれに限らない。基板処理装置100は複数種類の処理液を順次に基板Wに供給することで、基板Wに対して複数種類の処理を順次に行ってもよい。
そこで、変速機構40はリング部材20の回転方向を保持部材10の保持速度の高低に応じて変化させてもよい。図8の例では、基板処理装置100Aが有する変速機構40として変速機構40Bが示されている。図9および図10は、変速機構40Bの構成の一例を概略的に示す断面図である。
上述の例では、変速機構40Bは保持部材10に対して可変の回転方向でリング部材20を回転させた。しかしながら、変速機構40は保持部材10に対して可変の速度比でリング部材20を回転させてもよい。
上述の例では、回転機構30は変速機構40を備えていた。変速機構40は保持部材10の回転に基づいてリング部材20を回転させるので、リング部材20のリング速度は保持部材10の保持速度に依存していた。しかしながら、必ずしもこれに限らない。回転機構30は保持部材10およびリング部材20の回転を独立して制御可能であってもよい。
上述の例では、回転機構30は保持部材10の保持速度よりも低いリング速度でリング部材20を回転させた。しかしながら、必ずしもこれに限らない。保持部材10の保持速度が非常に低い場合に、これよりも遅くリング部材20を回転させると、リング部材20の上面20aの上で処理液が溜まる可能性が高まる。よって、保持部材10の保持速度が非常に低い場合には、リング部材20のリング速度を保持部材10の保持速度よりも高く制御してもよい。これにより、リング部材20の上面20a上において処理液により大きな遠心力を作用させて、処理液をリング部材20の外側に飛散させることができる。よって処理液がリング部材20の上面20aの上に溜まることを抑制できる。
例えば制御部50は、保持部材10の保持速度V1が第1基準値よりも高いときには、保持速度V1に対して1よりも低い第1速度比でリング部材20を回転させ、保持部材10の保持速度V1が第1基準値よりも低く第2基準値よりも高いときには、保持速度V1に対して第1速度比よりも高い第2速度比でリング部材20を回転させ、保持部材10の保持速度V1が第2基準値よりも低いときには、保持速度V1に対して1よりも高い第3速度比でリング部材20を回転させてもよい。これにより、リング部材20の外周縁から飛散する処理液の流速を所望の範囲に調整することができる。
処理液の流量が小さい場合には、処理液の流量が大きい場合に比して、液はねによる基板Wへの処理液の再付着も、リング部材20の上面20aの上の液たまりも生じにくい。この流量は、その処理液を基板Wに作用させるのに適した値に設定される。なお流量は流量調整弁84等によって制御される。
図17は、保持部材10およびリング部材20の構成の一例を概略的に示す断面図である。図17の例では、リング部材20の上面20aは水平面に対して傾斜している。より具体的には、リング部材20の上面20aは、その外周縁が内周縁よりも下方に位置するように、水平面に対して傾斜している。言い換えれば、リング部材20の上面20aは回転軸Q1についての径方向外側に向かうにしたがって筐体70の床面に近づくように傾斜している。
リング部材20の上面20aは親水性を有していてもよい。ここでいう親水性とは、例えば接触角が30度以下であることをいう。例えばリング部材20は親水性材料(例えば石英など)によって形成されてもよい。この場合、リング部材20の上面20aも親水性を有する。
保持部材10の側面10aとリング部材20の内周面20bとは、回転軸Q1についての径方向において隙間を隔てて対向している(図1も参照)。よって側面10aおよび内周面20bは対向面であるといえる。この保持部材10の側面10aおよびリング部材20の内周面20bの少なくともいずれか一方は、疎水性を有していてもよい。ここでいう疎水性とは、例えば接触角が30度以上であることをいう。
図18は、基板保持装置1Bの構成の一例を概略的に示す断面図である。基板保持装置1Bは保護部材22の有無という点で図1の基板保持装置1と相違する。
上述の例では、処理液供給部80は基板Wの表面に処理液を供給した。しかるに、基板Wの裏面に処理液を供給する処理液供給部が設けられてもよい。
図21は、基板処理装置100Cの構成の一例を概略的に示す図である。基板処理装置100Cの構成は基板処理装置100と同一である。ただし基板処理装置100Cにおいては、基板処理時において基板Wの周縁から飛散した処理液がベース部材12の上面12aを流れる程度に、ベース部材12の上面12aは平面視において基板Wの周縁よりも外側に広がっている。言い換えれば、基板Wの周縁から飛散した処理液がベース部材12の上面12aを流れる程度に、ベース部材12の外周面の径が基板Wの径よりも広い。
5 選択部
10 保持部材
20 リング部材
22 保護部材
24 昇降機構
30 回転機構
31 モータ
32 シャフト
40,40A〜40C 変速機構
41 外歯車
42,42A 第1歯車部(歯車部)
421 第2歯車(外歯車)
422,422a,422b 第1歯車(外歯車)
42B 第2歯車部(歯車部)
43 内歯車
45,45A,45B 移動機構
50 制御手段(制御部)
80 第1処理液供給手段(処理液供給部)
90 第2処理液供給手段(処理液供給部)
222 第2突起部(突起部)
431 第1突起部(突起部)
W 基板
Claims (16)
- 基板に処理液を供給する基板処理装置に用いられる基板保持装置であって、
基板を水平姿勢で保持する保持部材と、
前記保持部材に保持された基板の周縁を平面視において囲むリング形状を有し、前記リング形状の上面が前記基板の表面と同じ高さ又は前記基板の表面よりも下方に位置するリング部材と、
前記保持部材に保持された基板を通り鉛直方向に沿う軸を回転軸として、前記保持部材と前記リング部材とを互いに異なる回転速度で、および/または、互いに異なる回転方向に回転させる回転機構と
を備える、基板保持装置。 - 請求項1に記載の基板保持装置であって、
前記回転機構は、
モータと、
前記モータおよび前記保持部材を連結するシャフトと、
前記シャフトと前記リング部材とを相対的に回転可能に連結し、前記シャフトの回転速度に対して速度比で前記リング部材を回転させる変速機構と
を備える、基板保持装置。 - 請求項2に記載の基板保持装置であって、
前記変速機構は、
前記シャフトに連結されて前記シャフトとともに回転する外歯車と、
前記リング部材に連結された内歯車と、
前記外歯車と前記内歯車との間に設けられる少なくとも一つの第1歯車を有しており、前記外歯車の回転に伴って前記内歯車を回転させる第1歯車部と
を備える、基板保持装置。 - 請求項3に記載の基板保持装置であって、
前記少なくとも一つの第1歯車は偶数個の第1歯車を有しており、
前記偶数個の第1歯車は互いに直列に噛み合っており、前記外歯車の回転に伴って回転して前記内歯車を回転させる、基板保持装置。 - 請求項3に記載の基板保持装置であって、
前記第1歯車部は奇数個の第1歯車を有しており、前記外歯車の回転に伴って回転して前記内歯車を回転させる、基板保持装置。 - 請求項4に記載の基板保持装置であって、
前記外歯車と前記内歯車との間に設けられ、互いに直列に噛み合う奇数個の第2歯車を有しており、前記外歯車の回転に伴って前記内歯車を回転させる第2歯車部と、
前記第1歯車部を、前記外歯車と前記内歯車との間の第1噛合位置と、前記外歯車と前記内歯車との間から退避した第1退避位置との間で移動させつつ、前記第2歯車部を、前記外歯車と前記内歯車との間の第2噛合位置と、前記外歯車と前記内歯車との間から退避した第2退避位置との間で移動させる移動機構と
を備える、基板保持装置。 - 請求項1に記載の基板保持装置であって、
前記回転機構は、
前記保持部材を回転させる第1モータと、
前記リング部材を回転させる第2モータと
を備える、基板保持装置。 - 請求項1から請求項7のいずれか一つに記載の基板保持装置であって、
前記回転機構は前記保持部材の回転速度に対して可変の速度比で前記リング部材を回転させる、基板保持装置。 - 請求項8に記載の基板保持装置であって、
前記回転機構は、
前記保持部材を第1保持速度で回転させるときには、前記リング部材を第1リング速度で回転させ、
前記保持部材を前記第1保持速度よりも低い第2保持速度で回転させるときには、前記リング部材を第2リング速度で回転させ、
前記第1保持速度に対する前記第1リング速度の第1速度比は、前記第2保持速度に対する前記第2リング速度の第2速度比よりも小さい、基板保持装置。 - 請求項1から請求項9のいずれか一つに記載の基板保持装置であって、
前記リング部材の前記上面は、前記上面の外周縁が前記上面の内周縁よりも下方に位置するように水平面に対して傾斜している、基板保持装置。 - 請求項1から請求項10のいずれか一つに記載の基板保持装置であって、
前記リング部材の前記上面は親水性を有する、基板保持装置。 - 請求項1から請求項11のいずれか一つに記載の基板保持装置であって、
前記保持部材と前記リング部材との互いに対向する対向面の少なくともいずれか一方は疎水性を有する、基板保持装置。 - 請求項12に記載の基板保持装置であって、
前記リング部材の前記対向面たる内周面は疎水性を有する、基板保持装置。 - 請求項1から請求項13のいずれか一つに記載の基板保持装置であって、
前記保持部材に対して相対的に前記リング部材を昇降させる昇降機構を更に備える、基板保持装置。 - 請求項14に記載の基板保持装置と、
前記保持部材に保持された基板の表面に処理液を供給する第1処理液供給手段と、
前記保持部材に保持された基板の裏面に処理液を供給する第2処理液供給手段と、
(i)前記昇降機構を制御して前記リング部材を当該基板の表面よりも下方の第1位置で停止させ、且つ、前記回転機構に前記保持部材および前記リング部材を回転させた状態で、前記第1処理液供給手段に処理液を供給させ、(ii)前記昇降機構を制御して前記リング部材を前記第1位置よりも前記基板の厚みの分だけ下方の第2位置で停止させ、且つ、前記回転機構に前記保持部材および前記リング部材を回転させた状態で、前記第2処理液供給手段に処理液を供給させる制御手段と
を備える、基板処理装置。 - 請求項1から請求項14のいずれか一つに記載の基板保持装置と、
前記保持部材に保持された基板の表面に処理液を供給する処理液供給手段と、
前記回転機構に前記保持部材および前記リング部材を回転させた状態で、前記処理液供給手段に処理液を供給させて基板処理を行う制御手段と
を備え、
前記保持部材は前記基板の裏面と対向する上面を有しており、
平面視において前記保持部材の上面は基板の周縁よりも外側に広がっており、
前記リング部材の上面の高さ位置は前記保持部材の上面と同じ又は前記保持部材の上面よりも低く、
前記基板処理において、基板の周縁から飛散した処理液は前記保持部材の上面および前記リング部材の上面をこの順で流れる、基板処理装置。
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