JP6833101B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6833101B2 JP6833101B2 JP2020503111A JP2020503111A JP6833101B2 JP 6833101 B2 JP6833101 B2 JP 6833101B2 JP 2020503111 A JP2020503111 A JP 2020503111A JP 2020503111 A JP2020503111 A JP 2020503111A JP 6833101 B2 JP6833101 B2 JP 6833101B2
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- 239000004065 semiconductor Substances 0.000 title claims description 75
- 239000000758 substrate Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 description 10
- 230000004907 flux Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49112—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting a common bonding area on the semiconductor or solid-state body to different bonding areas outside the body, e.g. diverging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/4917—Crossed wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
Description
本発明の実施の形態1について、図面を用いて以下に説明する。図1は、実施の形態1に係る半導体装置1およびこれに接続される制御基板100の概略構成図である。図2は、半導体装置1および制御基板100の斜視図である。図3は、半導体装置1が備えるセンス抵抗4およびその周辺の平面図である。
次に、実施の形態2に係る半導体装置1Aについて説明する。図4は、実施の形態2に係る半導体装置1Aおよびこれに接続される制御基板100の斜視図である。図5は、半導体装置1Aが備えるセンス抵抗4およびその周辺の平面図である。なお、実施の形態2において、実施の形態1で説明したものと同一の構成要素については同一符号を付して説明は省略する。
次に、実施の形態3に係る半導体装置について説明する。図6は、実施の形態3に係る半導体装置1Bおよびこれに接続される制御基板100の斜視図である。図7は、誘導電流が打ち消し合うことを説明するための説明図である。なお、実施の形態3において、実施の形態1,2で説明したものと同一の構成要素については同一符号を付して説明は省略する。
次に、実施の形態4に係る半導体装置について説明する。図8は、実施の形態4に係る半導体装置1Cおよびこれに接続される制御基板100の概略構成図である。なお、実施の形態4において、実施の形態1〜3で説明したものと同一の構成要素については同一符号を付して説明は省略する。
Claims (2)
- 自身が備える半導体素子(3,23)を流れる電流を検出する制御基板(100)に接続可能な半導体装置(1,1A,1B,1C)であって、
絶縁基板(2)と、
前記絶縁基板(2)上に配置され、かつ、センス電極およびエミッタ電極を有する前記半導体素子(3,23)と、
前記半導体素子(3,23)上に配置され、かつ、一端が前記センス電極に直接接続されるとともに他端が前記エミッタ電極に直接接続されたセンス抵抗(4)と、
を備え、
前記制御基板(100)は、前記センス抵抗(4)の両端の電位差を検出することで前記半導体素子(3,23)を流れる電流を検出する、半導体装置。 - 前記半導体素子(23)はワイドバンドギャップ材料により構成された、請求項1記載の半導体装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2018/007134 WO2019167104A1 (ja) | 2018-02-27 | 2018-02-27 | 半導体装置 |
Publications (2)
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JPWO2019167104A1 JPWO2019167104A1 (ja) | 2020-09-24 |
JP6833101B2 true JP6833101B2 (ja) | 2021-02-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP2020503111A Active JP6833101B2 (ja) | 2018-02-27 | 2018-02-27 | 半導体装置 |
Country Status (5)
Country | Link |
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US (1) | US11296073B2 (ja) |
JP (1) | JP6833101B2 (ja) |
CN (1) | CN111742407A (ja) |
DE (1) | DE112018007169T5 (ja) |
WO (1) | WO2019167104A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7462474B2 (ja) * | 2020-05-25 | 2024-04-05 | 日立Astemo株式会社 | 電力変換装置 |
CN115085706A (zh) * | 2021-03-11 | 2022-09-20 | 台达电子企业管理(上海)有限公司 | 开关模块 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3557340B2 (ja) * | 1998-03-04 | 2004-08-25 | 株式会社東芝 | 半導体スタック |
JP2001148458A (ja) | 1999-11-22 | 2001-05-29 | Mitsubishi Electric Corp | パワー半導体モジュール |
US6992377B2 (en) | 2004-02-26 | 2006-01-31 | Freescale Semiconductor, Inc. | Semiconductor package with crossing conductor assembly and method of manufacture |
JP4409348B2 (ja) | 2004-04-26 | 2010-02-03 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
WO2015083250A1 (ja) * | 2013-12-04 | 2015-06-11 | 三菱電機株式会社 | 半導体装置 |
JP6506644B2 (ja) * | 2015-07-09 | 2019-04-24 | 日立オートモティブシステムズ株式会社 | 駆動装置 |
-
2018
- 2018-02-27 CN CN201880090084.9A patent/CN111742407A/zh active Pending
- 2018-02-27 US US16/765,416 patent/US11296073B2/en active Active
- 2018-02-27 DE DE112018007169.3T patent/DE112018007169T5/de active Pending
- 2018-02-27 WO PCT/JP2018/007134 patent/WO2019167104A1/ja active Application Filing
- 2018-02-27 JP JP2020503111A patent/JP6833101B2/ja active Active
Also Published As
Publication number | Publication date |
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JPWO2019167104A1 (ja) | 2020-09-24 |
US20200335492A1 (en) | 2020-10-22 |
CN111742407A (zh) | 2020-10-02 |
WO2019167104A1 (ja) | 2019-09-06 |
US11296073B2 (en) | 2022-04-05 |
DE112018007169T5 (de) | 2020-11-05 |
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