JP2014220329A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2014220329A
JP2014220329A JP2013097728A JP2013097728A JP2014220329A JP 2014220329 A JP2014220329 A JP 2014220329A JP 2013097728 A JP2013097728 A JP 2013097728A JP 2013097728 A JP2013097728 A JP 2013097728A JP 2014220329 A JP2014220329 A JP 2014220329A
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adherend
semiconductor device
wiring
electrode terminal
bonding surface
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JP2013097728A
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Inventor
貴弘 杉村
Takahiro Sugimura
貴弘 杉村
浩史 野津
Hiroshi Nozu
浩史 野津
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2013097728A priority Critical patent/JP2014220329A/ja
Priority to PCT/JP2014/060528 priority patent/WO2014181638A1/ja
Publication of JP2014220329A publication Critical patent/JP2014220329A/ja
Pending legal-status Critical Current

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Abstract

【課題】設計自由度の高い半導体装置の製造方法を提供する。
【解決手段】半導体装置の製造方法は、第１被着体としての電極端子１２Ａと第２被着体としての半導体チップ１４Ａの間を配線１６Ａにより接続する接続工程と、接続工程の後、電極端子１２Ａ及び半導体チップ１４Ａの少なくとも１つを移動することによって、電極端子１２Ａを半導体チップ１４Ａに対して相対的に移動する移動工程と、半導体チップ１４Ａに対する電極端子１２Ａの相対的な位置を固定する固定工程と、を含む。
【選択図】図２

Description

本発明は、半導体装置の製造方法に関する。
半導体装置の例として、ケース型の半導体装置が知られている（非特許文献１参照）。このような半導体装置は、ワイヤボンディングにより、ケース内に収容された半導体チップと、ケースに取り付けられた電極端子とをワイヤにより接続することによって製造される。
「Ｃｕワイヤを中心としたワイヤボンディングの不良原因と信頼性向上・評価技術」株式会社技術情報協会出版、２０１１年７月２９日、ｐ．１６３
ワイヤボンディングでは、ワイヤを半導体チップ上に載せて圧力及び超音波を印加することによって、ワイヤを半導体チップに接続する。同様に、ワイヤを電極端子上に載せて圧力及び超音波を印加することによって、ワイヤを電極端子に接続する。半導体チップに対する電極端子の相対的な位置は固定されており、ワイヤボンディング後に変えることができない。よって、半導体装置の設計自由度は高くない。
本発明は、設計自由度の高い半導体装置の製造方法を提供することを目的とする。
本発明の一側面に係る半導体装置の製造方法は、第１被着体と第２被着体との間を配線により接続する接続工程と、前記接続工程の後、前記第１被着体及び前記第２被着体の少なくとも１つを移動することによって、前記第１被着体を前記第２被着体に対して相対的に移動する移動工程と、前記第２被着体に対する前記第１被着体の相対的な位置を固定する固定工程と、を含む。
この方法では、接続工程後に第２被着体に対する第１被着体の相対的な位置を任意に変えることができる。よって、半導体装置の設計自由度が高くなる。
前記移動工程では、前記第１被着体と前記配線との接合面を含む第１平面が、前記第２被着体と前記配線との接合面を含む第２平面に対向配置されるように、前記第１被着体及び前記第２被着体の少なくとも１つを移動してもよい。
この場合、第２被着体と配線との接合面の法線方向から見て、半導体装置を小型化することができる。
前記移動工程では、前記第１被着体と前記配線との接合面を含む第１平面が、前記第２被着体と前記配線との接合面を含む第２平面と略直交するように、前記第１被着体及び前記第２被着体の少なくとも１つを移動してもよい。
この場合、第２被着体と配線との接合面の法線方向から見て、半導体装置を小型化することができる。
前記固定工程では、前記第１被着体を熱硬化性樹脂部に固定してもよい。
この場合、ゲル等に比べて半導体装置の耐熱性を向上させることができる。
前記固定工程では、前記第１被着体をケースに固定してもよい。
前記固定工程では、前記第１被着体を、ケースに取り付けられた支持部材に固定してもよい。
前記配線が、ワイヤ又はボンディングリボンであってもよい。
本発明によれば、設計自由度の高い半導体装置の製造方法が提供され得る。
第１実施形態に係る半導体装置の製造方法により製造される半導体装置を模式的に示す斜視図である。 図１のＩＩ−ＩＩ線に沿った半導体装置の断面図である。 第１実施形態に係る半導体装置の製造方法の一工程を模式的に示す断面図である。 第１実施形態に係る半導体装置の製造方法の一工程を模式的に示す断面図である。 第２実施形態に係る半導体装置の製造方法により製造される半導体装置を模式的に示す断面図である。 第２実施形態に係る半導体装置の製造方法の一工程を模式的に示す断面図である。 第２実施形態に係る半導体装置の製造方法の一工程を模式的に示す断面図である。 第３実施形態に係る半導体装置の製造方法により製造される半導体装置を模式的に示す斜視図である。 第４実施形態に係る半導体装置の製造方法により製造される半導体装置を模式的に示す斜視図である。
以下、添付図面を参照しながら本発明の実施形態が詳細に説明される。図面の説明において、同一又は同等の要素には同一符号が用いられ、重複する説明は省略される。
（第１実施形態）
図１は、第１実施形態に係る半導体装置の製造方法により製造される半導体装置を模式的に示す斜視図である。図２は、図１のＩＩ−ＩＩ線に沿った半導体装置の断面図である。図１及び図２に示される半導体装置１０は、例えば電源等に使用される電力用半導体装置である。
半導体装置１０は、電極端子１２Ａ、半導体チップ１４Ａ、及び配線１６Ａを備える。配線１６Ａは、電極端子１２Ａと半導体チップ１４Ａとの間を接続する。電極端子１２Ａと配線１６Ａとの間には接合面１１Ａが形成される。半導体チップ１４Ａと配線１６Ａとの間には接合面１３Ａが形成される。これにより、電極端子１２Ａが半導体チップ１４Ａの表面電極に電気的に接続される。本実施形態では、接合面１１Ａを含む第１平面ＰＡ１が接合面１３Ａを含む第２平面ＰＡ２に対向配置される。
半導体装置１０は、電極端子１２Ｂ、配線基板２０、及び配線１６Ｂを備え得る。配線１６Ｂは、電極端子１２Ｂと配線基板２０との間を接続する。電極端子１２Ｂと配線１６Ｂとの間には接合面１１Ｂが形成される。配線基板２０と配線１６Ｂとの間には接合面１３Ｂが形成される。本実施形態では、接合面１１Ｂを含む第１平面ＰＢ１が接合面１３Ｂを含む第２平面ＰＢ２に対向配置される。
配線基板２０上には、半導体チップ１４Ａ，１４Ｂが配置され得る。半導体チップ１４Ａ，１４Ｂは、同じ構造を有してもよい。半導体チップ１４Ａ，１４Ｂは、鉛入り金属半田、鉛を含まない金属半田又は導電性樹脂等を含む材料から構成される接着層４２をそれぞれ介して配線基板２０に実装され得る。配線基板２０は、絶縁性基板２２と、絶縁性基板２２の表面に設けられた配線パターン層２４と、絶縁性基板２２の裏面に設けられた放熱層２６とを備える。放熱層２６は放熱層２６の裏面全体に設けられ得る。半導体チップ１４Ａ，１４Ｂは、接着層４２をそれぞれ介して配線パターン層２４に接続される。これにより、電極端子１２Ｂが半導体チップ１４Ａの裏面電極に電気的に接続される。
電極端子１２Ａは、接合面１１Ａに沿って延びる第１部分１８Ａと、接合面１１Ａに直交する第２部分１９Ａとを備え得る。電極端子１２Ｂは、接合面１１Ｂに沿って延びる第１部分１８Ｂと、接合面１１Ｂに直交する第２部分１９Ｂとを備え得る。電極端子１２Ａ，１２Ｂは、例えば折り曲げられた金属板である。
半導体チップ１４Ａ，１４Ｂの例は、バイポーラトランジスタ、ＭＯＳ−ＦＥＴ、絶縁ゲートバイポーラトランジスタ（ＩＧＢＴ）等のトランジスタ、ダイオードを含む。半導体チップ１４Ａ，１４Ｂの材料の例は、ワイドバンドギャップ半導体、シリコンその他の半導体を含む。ワイドバンドギャップ半導体は、シリコンのバンドギャップよりも大きいバンドギャップを有する。ワイドバンドギャップ半導体の例は、シリコンカーバイド（ＳｉＣ）、窒化ガリウム（ＧａＮ）、ダイヤモンドを含む。
配線１６Ａ，１６Ｂは、例えば可撓性を有する。配線１６Ａ，１６Ｂは、ワイヤ又はボンディングリボンであってもよい。配線１６Ａ，１６Ｂの断面形状は例えば円形である。配線１６Ａ，１６Ｂの径は、例えば１００〜５００μｍである。配線１６Ａ，１６Ｂの材料の例は、アルミニウム、金、銅等の金属を含む。
配線パターン層２４の材料の例は、銅及び銅合金等の金属を含む。絶縁性基板２２の材料の例は、アルミナ等のセラミックを含む。放熱層２６の材料の例は、銅及び銅合金等の金属を含む。放熱層２６は、例えば半田等からなる接着層４４を介してヒートシンク３２に接着される。ヒートシンク３２の材料の例は、金属を含む。
半導体チップ１４Ａ，１４Ｂ及び配線基板２０は、ケース３０内に収容され得る。ケース３０は、例えば、半導体チップ１４Ａ，１４Ｂを収容する箱状の電気絶縁性のケースである。ケース３０は、例えば筒状である。ケース３０の一方の開口はヒートシンク３２によって封止され得る。ケース３０の他方の開口は蓋によって封止され得る。ケース３０の材料の例は、ポリブチレンテレフタレート（ＰＢＴ）又はポリフェニレンサルファイド（ＰＰＳ）樹脂といったエンジニヤリングプラスチック等の樹脂を含む。蓋の材料の例は熱可塑性樹脂を含む。ケース３０内には熱硬化性樹脂部５０が充填され得る。
熱硬化性樹脂部５０は、電極端子１２Ａ，１２Ｂ及び配線１６Ａ，１６Ｂを固定する。電極端子１２Ａ，１２Ｂの第２部分１９Ａ，１９Ｂは、熱硬化性樹脂部５０から外側に突出する。
図３及び図４は、本実施形態に係る半導体装置の製造方法の一工程を模式的に示す断面図である。半導体装置１０は、例えば以下のように製造される。
（接続工程）
まず、図３（ａ）に示されるように、第１被着体としての電極端子１２Ａと第２被着体としての半導体チップ１４Ａとの間を配線１６Ａにより接続する。これにより、電極端子１２Ａと配線１６Ａとの間に接合面１１Ａが形成される。半導体チップ１４Ａと配線１６Ａとの間に接合面１３Ａが形成される。接続工程において、接合面１１Ａは接合面１３Ａと略平行である。略平行とは、接合面１１Ａと接合面１３Ａとのなす角度が±５度以下であることを意味する。通常、ワイヤボンディングでは、２つの接合面１１Ａ，１３Ａが互いに平行になる。
配線１６Ａは、例えばワイヤボンディングにより、電極端子１２Ａ及び半導体チップ１４Ａに接続される。ワイヤボンディングを行う際に、電極端子１２Ａ及び半導体チップ１４Ａは、治具６０によって保持される。電極端子１２Ａの第２部分１９Ａは、治具６０に形成された孔６２Ａ内に挿入される。配線１６Ａを電極端子１２Ａ上に載せて圧力及び超音波を印加することによって、配線１６Ａが電極端子１２Ａに接合される。同様に、配線１６Ａを半導体チップ１４Ａ上に載せて圧力及び超音波を印加することによって、配線１６Ａが半導体チップ１４Ａに接合される。
また、図３（ｂ）に示されるように、第１被着体としての電極端子１２Ｂと第２被着体としての配線基板２０との間を配線１６Ｂにより接続する。これにより、電極端子１２Ｂと配線１６Ｂとの間に接合面１１Ｂが形成される。配線基板２０と配線１６Ｂとの間に接合面１３Ｂが形成される。接続工程において、接合面１１Ｂは接合面１３Ｂと略平行である。略平行とは、接合面１１Ｂと接合面１３Ｂとのなす角度が±５度以下であることを意味する。通常、ワイヤボンディングでは、２つの接合面１１Ｂ，１３Ｂが互いに平行になる。
配線１６Ｂは、例えばワイヤボンディングにより電極端子１２Ｂ及び配線基板２０に接続される。ワイヤボンディングを行う際に、電極端子１２Ｂ及び配線基板２０は、治具６０によって保持される。電極端子１２Ｂの第２部分１９Ｂは、治具６０に形成された孔６２Ｂ内に挿入される。配線１６Ｂを電極端子１２Ｂ上に載せて圧力及び超音波を印加することによって、配線１６Ｂが電極端子１２Ｂに接合される。同様に、配線１６Ｂを配線基板２０上に載せて圧力及び超音波を印加することによって、配線１６Ｂが配線基板２０に接合される。
（移動工程）
次に、図４に示されるように、電極端子１２Ａ及び半導体チップ１４Ａの少なくとも１つを移動することによって、電極端子１２Ａを半導体チップ１４Ａに対して相対的に移動する。例えば、電極端子１２Ａを第１位置から第２位置まで移動する。本実施形態では、電極端子１２Ａと配線１６Ａとの接合面１１Ａを含む第１平面ＰＡ１が、半導体チップ１４Ａと配線１６Ａとの接合面１３Ａを含む第２平面ＰＡ２に対向配置されるように、電極端子１２Ａ及び半導体チップ１４Ａの少なくとも１つを移動する。
また、電極端子１２Ｂ及び配線基板２０の少なくとも１つを移動することによって、電極端子１２Ｂを配線基板２０に対して相対的に移動する。例えば、電極端子１２Ｂを第１位置から第２位置まで移動する。本実施形態では、電極端子１２Ｂと配線１６Ｂとの接合面１１Ｂを含む第１平面ＰＢ１が、配線基板２０と配線１６Ｂとの接合面１３Ｂを含む第２平面ＰＢ２に対向配置されるように、電極端子１２Ｂ及び配線基板２０の少なくとも１つを移動する。
（固定工程）
次に、図２に示されるように、半導体チップ１４Ａに対する電極端子１２Ａの相対的な位置を固定する。配線基板２０に対する電極端子１２Ｂの相対的な位置を固定する。本実施形態では、電極端子１２Ａ，１２Ｂを熱硬化性樹脂部５０に固定する。配線１６Ａ，１６Ｂも熱硬化性樹脂部５０に固定され得る。未硬化の熱硬化性樹脂材料をケース３０内に流し込んで加熱することによって、熱硬化性樹脂部５０を形成することができる。
固定工程の前に、必要に応じて、接着層４４を介して配線基板２０をヒートシンク３２に接着する。
本実施形態では、接続工程後に半導体チップ１４Ａに対する電極端子１２Ａの相対的な位置を任意に変えることができる。接続工程後に配線基板２０に対する電極端子１２Ｂの相対的な位置を任意に変えることができる。そのため、半導体装置１０の設計自由度が高くなる。
接合面１１Ａを含む第１平面ＰＡ１が接合面１３Ａを含む第２平面ＰＡ２に対向配置されるように、電極端子１２Ａ及び半導体チップ１４Ａの少なくとも１つを移動すると、接合面１１Ａ，１３Ａの法線方向から見て、半導体装置１０を小型化することができる。接合面１１Ｂを含む第１平面ＰＢ１が接合面１３Ｂを含む第２平面ＰＢ２に対向配置されるように、電極端子１２Ｂ及び配線基板２０の少なくとも１つを移動すると、接合面１１Ｂ，１３Ｂの法線方向から見て、半導体装置１０を小型化することができる。
熱硬化性樹脂部５０が電極端子１２Ａ，１２Ｂを固定すると、ゲル等に比べて半導体装置１０の耐熱性を向上させることができる。半導体チップ１４Ａ，１４Ｂの材料がワイドバンドギャップ半導体を含む場合、半導体装置１０に大電流が流れるので、半導体装置１０が高温になる傾向がある。そのような場合であっても、半導体装置１０の信頼性を向上させることができる。
（第２実施形態）
図５は、第２実施形態に係る半導体装置の製造方法により製造される半導体装置を模式的に示す断面図である。図５に示される半導体装置１１０は、電極端子１２Ａ，１２Ｂに代えて電極端子１１２Ａ，１１２Ｂをそれぞれ備えること以外は、半導体装置１０と同じ構成を備える。電極端子１１２Ａ，１１２Ｂは、例えば折り曲げられていない金属板である。
電極端子１１２Ａは、電極端子１１２Ａと配線１６Ａとの接合面１１Ａを含む第１平面ＰＡ１が、半導体チップ１４Ａと配線１６Ａとの接合面１３Ａを含む第２平面ＰＡ２と略直交するように、配置される。略直交とは、第１平面ＰＡ１と第２平面ＰＡ２とのなす角度が９０±５度以下であることを意味する。
電極端子１１２Ｂは、電極端子１１２Ｂと配線１６Ｂとの接合面１１Ｂを含む第１平面ＰＢ１が、配線基板２０と配線１６Ｂとの接合面１３Ｂを含む第２平面ＰＢ２と略直交するように、配置される。略直交とは、第１平面ＰＢ１と第２平面ＰＢ２とのなす角度が９０±５度以下であることを意味する。
図６及び図７は、第２実施形態に係る半導体装置の製造方法の一工程を模式的に示す断面図である。半導体装置１１０は、例えば以下のように製造される。
（接続工程）
まず、図６（ａ）に示されるように、第１被着体としての電極端子１１２Ａと第２被着体としての半導体チップ１４Ａとの間を配線１６Ａにより接続する。図６（ｂ）に示されるように、第１被着体としての電極端子１１２Ｂと第２被着体としての配線基板２０との間を配線１６Ｂにより接続する。本実施形態の接続工程は、電極端子１２Ａ，１２Ｂに代えて電極端子１１２Ａ，１１２Ｂをそれぞれ用いたこと以外は、第１実施形態の接続工程と同様に実施される。電極端子１１２Ａ，１１２Ｂは、例えば折り曲げられていない金属板である。そのため、治具６０には、孔６２Ａ，６２Ｂを形成する必要がない。
（移動工程）
次に、図７に示されるように、電極端子１１２Ａ及び半導体チップ１４Ａの少なくとも１つを移動することによって、電極端子１１２Ａを半導体チップ１４Ａに対して相対的に移動する。本実施形態では、電極端子１１２Ａと配線１６Ａとの接合面１１Ａを含む第１平面ＰＡ１が、半導体チップ１４Ａと配線１６Ａとの接合面１３Ａを含む第２平面ＰＡ２と略直交するように、電極端子１１２Ａ及び半導体チップ１４Ａの少なくとも１つを移動する。略直交とは、第１平面ＰＡ１と第２平面ＰＡ２とのなす角度が９０±５度以下であることを意味する。
また、電極端子１１２Ｂ及び配線基板２０の少なくとも１つを移動することによって、電極端子１１２Ｂを配線基板２０に対して相対的に移動する。本実施形態では、電極端子１１２Ｂと配線１６Ｂとの接合面１１Ｂを含む第１平面ＰＢ１が、配線基板２０と配線１６Ｂとの接合面１３Ｂを含む第２平面ＰＢ２と略直交するように、電極端子１１２Ｂ及び配線基板２０の少なくとも１つを移動する。略直交とは、第１平面ＰＢ１と第２平面ＰＢ２とのなす角度が９０±５度以下であることを意味する。
（固定工程）
次に、図５に示されるように、半導体チップ１４Ａに対する電極端子１１２Ａの相対的な位置を固定する。配線基板２０に対する電極端子１１２Ｂの相対的な位置を固定する。本実施形態では、熱硬化性樹脂部５０が電極端子１１２Ａ，１１２Ｂを固定する。
本実施形態では、第１実施形態と同様の作用効果が得られる。さらに、折り曲げられていない金属板を電極端子１１２Ａ，１１２Ｂとして用いても、電極端子１１２Ａ，１１２Ｂを接合面１１Ａ，１１Ｂに沿う方向に突出させることができる。
（第３実施形態）
図８は、第３実施形態に係る半導体装置の製造方法により製造される半導体装置を模式的に示す斜視図である。図８に示される半導体装置２１０は、電極端子１２Ａ，１２Ｂに代えて電極端子２１２Ａ，２１２Ｂ（第１被着体）をそれぞれ備え、熱硬化性樹脂部５０に代えて絶縁材２５０を備えること以外は、半導体装置１０と同じ構成を備える。絶縁材２５０は、例えばシリコーンゲル等のゲルである。電極端子２１２Ａ，２１２Ｂは、ケース３０に固定される。
電極端子２１２Ａは、ケース３０に固定される第１部分２１９Ａと、第１部分２１９Ａに接続され、ケース３０から外側に突出する第２部分２１８Ａとを備え得る。第１部分２１９Ａには配線１６Ａが接続される。第１部分２１９Ａは、例えば、ケース３０の一方の開口を横切る金属板である。第２部分２１８Ａは、例えば、第１部分２１９Ａの縁に接続され、第１部分２１９Ａに直交する金属板である。
電極端子２１２Ｂは、ケース３０に固定される第１部分２１９Ｂと、第１部分２１９Ｂに接続され、ケース３０から外側に突出する第２部分２１８Ｂとを備え得る。第１部分２１９Ｂには配線１６Ｂが接続される。第１部分２１９Ｂは、例えば、ケース３０の一方の開口を横切る金属板である。第２部分２１８Ｂは、例えば、第１部分２１９Ｂの縁に接続され、第１部分２１９Ｂに直交する金属板である。
半導体装置２１０は、接続工程（図３参照）、移動工程（図４参照）及び固定工程を経ることによって製造され得る。接続工程及び移動工程は、第１実施形態と同様に実施される。固定工程では、図８に示されるように、電極端子２１２Ａ，２１２Ｂを、ケース３０に固定する。電極端子２１２Ａの第１部分２１９Ａの両端がケース３０に固定され得る。電極端子２１２Ｂの第１部分２１９Ｂの両端がケース３０に固定され得る。その後、必要に応じて絶縁材２５０がケース３０内に充填される。
本実施形態では、第１実施形態と同様の作用効果が得られる。さらに、高い位置精度で電極端子２１２Ａ，２１２Ｂをケース３０に固定することができる。
（第４実施形態）
図９は、第４実施形態に係る半導体装置の製造方法により製造される半導体装置を模式的に示す斜視図である。図９に示される半導体装置３１０は、熱硬化性樹脂部５０に代えて絶縁材２５０を備え、支持部材３１９Ａ，３１９Ｂを更に備えること以外は、半導体装置１０と同じ構成を備える。
電極端子１２Ａ，１２Ｂは、ケース３０に取り付けられた支持部材３１９Ａ，３１９Ｂに固定される。電極端子１２Ａ，１２Ｂはケース３０に固定されてもよい。支持部材３１９Ａ，３１９Ｂは、例えば、ケース３０の一方の開口を横切る絶縁板である。支持部材３１９Ａには、電極端子１２Ａを嵌め込むための開口３１８Ａが形成されている。支持部材３１９Ｂには、電極端子１２Ｂを嵌め込むための開口３１８Ｂが形成されている。
半導体装置３１０は、接続工程（図３参照）、移動工程（図４参照）及び固定工程を経ることによって製造され得る。接続工程及び移動工程は、第１実施形態と同様に実施される。固定工程では、図９に示されるように、電極端子１２Ａ，１２Ｂを、ケース３０に取り付けられた支持部材３１９Ａ，３１９Ｂに固定する。その後、必要に応じて絶縁材２５０がケース３０内に充填される。
本実施形態では、第１実施形態と同様の作用効果が得られる。さらに、高い位置精度で電極端子１２Ａ，１２Ｂを支持部材３１９Ａ，３１９Ｂに固定することができる。また、絶縁性の支持部材３１９Ａ，３１９Ｂを用いることにより、電極端子１２Ａ，１２Ｂをケース３０から電気的に絶縁することができる。
以上、本発明の好適な実施形態について詳細に説明されたが、本発明は上記実施形態に限定されない。各実施形態の構成は任意に組み合わせ得る。例えば、半導体装置２１０，３１０は、絶縁材２５０に代えて熱硬化性樹脂部５０を備えてもよい。半導体装置２１０は、電極端子２１２Ａ，２１２Ｂに代えて電極端子１１２Ａ，１１２Ｂを備えてもよい。この場合、電極端子１１２Ａ，１１２Ｂは、ケース３０に固定される部分を有する。半導体装置３１０は、電極端子１２Ａ，１２Ｂに代えて電極端子１１２Ａ，１１２Ｂを備えてもよい。この場合、電極端子１１２Ａ，１１２Ｂは、支持部材３１９Ａ，３１９Ｂに固定される。
第１被着体及び第２被着体のそれぞれは、電極端子、半導体チップ、又は配線基板等であってもよい。
１０，１１０，２１０，３１０…半導体装置、１１Ａ，１３Ａ，１１Ｂ，１３Ｂ…接合面、１２Ａ，１２Ｂ，１１２Ａ，１１２Ｂ，２１２Ａ，２１２Ｂ…電極端子（第１被着体）、１４Ａ…半導体チップ（第２被着体）、１６Ａ，１６Ｂ…配線、２０…配線基板（第２被着体）、５０…熱硬化性樹脂部、３０…ケース、３１９Ａ，３１９Ｂ…支持部材、ＰＡ１，ＰＢ１…第１平面、ＰＡ２，ＰＢ２…第２平面。

Claims (7)

  1. 第１被着体と第２被着体との間を配線により接続する接続工程と、
    前記接続工程の後、前記第１被着体及び前記第２被着体の少なくとも１つを移動することによって、前記第１被着体を前記第２被着体に対して相対的に移動する移動工程と、
    前記第２被着体に対する前記第１被着体の相対的な位置を固定する固定工程と、
    を含む、半導体装置の製造方法。
  2. 前記移動工程では、前記第１被着体と前記配線との接合面を含む第１平面が、前記第２被着体と前記配線との接合面を含む第２平面に対向配置されるように、前記第１被着体及び前記第２被着体の少なくとも１つを移動する、請求項１に記載の半導体装置の製造方法。
  3. 前記移動工程では、前記第１被着体と前記配線との接合面を含む第１平面が、前記第２被着体と前記配線との接合面を含む第２平面と略直交するように、前記第１被着体及び前記第２被着体の少なくとも１つを移動する、請求項１に記載の半導体装置の製造方法。
  4. 前記固定工程では、前記第１被着体を熱硬化性樹脂部に固定する、請求項１〜３のいずれか一項に記載の半導体装置の製造方法。
  5. 前記固定工程では、前記第１被着体をケースに固定する、請求項１〜４のいずれか一項に記載の半導体装置の製造方法。
  6. 前記固定工程では、前記第１被着体を、ケースに取り付けられた支持部材に固定する、請求項１〜５のいずれか一項に記載の半導体装置の製造方法。
  7. 前記配線が、ワイヤ又はボンディングリボンである、請求項１〜６のいずれか一項に記載の半導体装置の製造方法。
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JPH0855881A (ja) * 1994-07-07 1996-02-27 Tessera Inc マイクロエレクトロニクス素子の実装構造及びその製造方法
JP2003224243A (ja) * 2002-01-30 2003-08-08 Toyota Industries Corp 半導体装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0855881A (ja) * 1994-07-07 1996-02-27 Tessera Inc マイクロエレクトロニクス素子の実装構造及びその製造方法
JP2003224243A (ja) * 2002-01-30 2003-08-08 Toyota Industries Corp 半導体装置

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