JP6824422B2 - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
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- JP6824422B2 JP6824422B2 JP2019538805A JP2019538805A JP6824422B2 JP 6824422 B2 JP6824422 B2 JP 6824422B2 JP 2019538805 A JP2019538805 A JP 2019538805A JP 2019538805 A JP2019538805 A JP 2019538805A JP 6824422 B2 JP6824422 B2 JP 6824422B2
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- fuse
- resin member
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Description
前記電極配線部材は、板状に形成され、
前記ヒューズ部は、前記ヒューズ部よりも上流側及び下流側の前記電極配線部材の部分よりも板厚が薄く、
前記電極配線部材は、前記ヒューズ部と間隔を空けて並列された並列配線部を有し、
前記ヒューズ部の前記並列配線部側の面が、前記並列配線部から離れる側に窪むことにより、板厚が薄くなり、
前記ヒューズ樹脂部材は、前記ヒューズ部と前記並列配線部との間の間隔に配置されているものである。
実施の形態1に係る電力変換装置1について図面を参照して説明する。図1は、電力変換装置1を、筐体30の開口側から見た平面図であり、各部品の配置を説明するために封止樹脂部材25が透明化され、図示されていない。図2は、図1のA−A断面位置において切断した断面図であり、図3は、図1のB−B断面位置において切断した断面図である。図4は、ヒューズ部16から正面から見た平面図である。なお、各図は、模式図であり、図面間で各部材の寸法は完全に一致していない。
筐体30は、有底筒状に形成されており、封止樹脂部材25を注型する枠の役割を有する。なお、以下で、単に「内」「内側」又は「外」「外側」というときは、筐体30の内側又は外側を意味するものとする。「縦方向」は、筐体30の筒部が延出している方向を意味するものとし、「横方向」は、筐体30の底部が延在している方向を意味するものとする。
本実施の形態では、電力用半導体素子14、及び電極配線部材13としての電極用リードフレーム13は、樹脂部材である素子モールド樹脂20により封止され、パッケージ化された半導体素子モジュール29とされている。また、電力用半導体素子14の制御用端子に接続された制御用リードフレーム21も素子モールド樹脂20により封止されている。電極用リードフレーム13及び制御用リードフレーム21は、素子モールド樹脂20から外側に突出している。素子モールド樹脂20は、内部の素子及び配線を守るために、数GPa以上のヤング率を有する硬い樹脂が用いられるとよく、例えば、エポキシ樹脂が用いられる。
電極配線部材13(本例では、正極側のリードフレーム縦方向延出部13a2)には、ヒューズとして機能するヒューズ部16が形成されている。図4に示すように、ヒューズ部16は、電極配線部材13における電流の流れ方向の上流側部分及び下流側部分のそれぞれから2段階に断面積が小さくなった電極配線部材の部分により構成されている。具体的には、図4に、ヒューズ部16を正面から見た図を示すように、ヒューズ部16は、電流の流れ方向に沿って、ヒューズ部16よりも上流側の電極配線部材の部分よりも断面積が小さい上流側の第1段目部分16a1、上流側の第1段目部分16a1よりも断面積が小さい第2段目部分16b、及び第2段目部分16bよりも断面積が大きく、ヒューズ部16よりも下流側の電極配線部材13の部分よりも断面積が小さい下流側の第1段目部分16a2により構成されている。
熱抵抗 = 長さ÷(熱伝導率×断面積) ・・・(1)
ヒューズ部16を覆う樹脂部材であるヒューズ樹脂部材26が設けられている。ヒューズ樹脂部材26は、少なくとも、溶断箇所である第2段目部分16bの片面を覆うように配置される。本実施の形態では、図2に示すように、ヒューズ樹脂部材26は、ヒューズ部16の厚さ方向の一方側の面(本例では、正極側の外部接続端子10aとは反対側の面)を覆うように構成されている。図4に示すように、ヒューズ樹脂部材26は、ヒューズ部16の面積より広い面積に配置されている。なお、ヒューズ樹脂部材26は、ヒューズ部16の幅方向の両側の面を覆うように配置されてもよい。
封止樹脂部材25は、電力用半導体素子14、電極配線部材13、ヒューズ部16、及びヒューズ樹脂部材26を筐体30内に封止する樹脂部材である。本実施の形態では、封止樹脂部材25は、半導体素子モジュール29を筐体30内に封止するように構成されている。また、封止樹脂部材25は、絶縁部材18、外部接続端子10a、10b等の他の構成部品も筐体30内に封止している。封止樹脂部材25は、例えば剛性が高く、熱伝導率が高い樹脂材料が用いられる。封止樹脂部材25には、例えば熱伝導性フィラーを含有したエポキシ樹脂、シリコン樹脂、ウレタン樹脂、PPS、PEEK、ABSにて構成されていてもよい。封止樹脂部材25のヤング率は1MPa〜50GPa、熱伝導率は0.1W/(m・K)〜20W/(m・K)であるとよい。各構成部品を封止樹脂部材25により封止することによって、耐振動性や耐環境性を向上させることができる。
次に、実施の形態2に係る電力変換装置1について説明する。上記の実施の形態1と同様の構成部分は説明を省略する。本実施の形態に係る電力変換装置1の基本的な構成は実施の形態1と同様であるが、電極配線部材13の構成が一部異なる。図9は、図1のA−A断面位置において切断した本実施の形態に係る電力変換装置1の断面図である。図10は、正極側の電極用リードフレーム13aの斜視図である。
次に、実施の形態3に係る電力変換装置1について説明する。上記の実施の形態1と同様の構成部分は説明を省略する。本実施の形態に係る電力変換装置1の基本的な構成は実施の形態1と同様であるが、ヒューズ樹脂部材26、正極側の外部接続端子10aの構成が一部異なる。図11は、図1のA−A断面位置において切断した本実施の形態に係る電力変換装置1の断面図である。
次に、実施の形態4に係る電力変換装置1について説明する。上記の実施の形態1と同様の構成部分は説明を省略する。本実施の形態に係る電力変換装置1の基本的な構成は実施の形態1と同様であるが、ヒューズ部16、ヒューズ樹脂部材26の構成が一部異なる。図12は、図1のA−A断面位置において切断した本実施の形態に係る電力変換装置1の断面図である。
次に、実施の形態5に係る電力変換装置1について説明する。上記の実施の形態1と同様の構成部分は説明を省略する。本実施の形態に係る電力変換装置1の基本的な構成は実施の形態1と同様であるが、ヒューズ部16、ヒューズ樹脂部材26の構成が一部異なる。図13は、図1のA−A断面位置において切断した本実施の形態に係る電力変換装置1の断面図である。
最後に、本発明のその他の実施の形態について説明する。なお、以下に説明する各実施の形態の構成は、それぞれ単独で適用されるものに限られず、矛盾が生じない限り、他の実施の形態の構成と組み合わせて適用することも可能である。
Claims (11)
- 電力用半導体素子と、
前記電力用半導体素子の主電極に接続された電極配線部材と、
筐体と、
前記電極配線部材に形成された、ヒューズとして機能するヒューズ部と、
前記ヒューズ部を覆う樹脂部材であるヒューズ樹脂部材と、
前記電力用半導体素子、前記電極配線部材、前記ヒューズ部、及び前記ヒューズ樹脂部材を前記筐体内に封止する樹脂部材である封止樹脂部材と、を備え、
前記ヒューズ部は、電流の流れ方向に沿って、前記ヒューズ部よりも上流側の前記電極配線部材の部分よりも断面積が小さい上流側の第1段目部分、前記上流側の第1段目部分よりも断面積が小さい第2段目部分、及び前記第2段目部分よりも断面積が大きく、前記ヒューズ部よりも下流側の前記電極配線部材の部分よりも断面積が小さい下流側の第1段目部分により構成され、
前記電極配線部材は、板状に形成され、
前記ヒューズ部は、前記ヒューズ部よりも上流側及び下流側の前記電極配線部材の部分よりも板厚が薄く、
前記電極配線部材は、前記ヒューズ部と間隔を空けて並列された並列配線部を有し、
前記ヒューズ部の前記並列配線部側の面が、前記並列配線部から離れる側に窪むことにより、板厚が薄くなり、
前記ヒューズ樹脂部材は、前記ヒューズ部と前記並列配線部との間の間隔に配置されている電力変換装置。 - 電力用半導体素子と、
前記電力用半導体素子の主電極に接続された電極配線部材と、
筐体と、
前記電極配線部材に形成された、ヒューズとして機能するヒューズ部と、
前記ヒューズ部を覆う樹脂部材であるヒューズ樹脂部材と、
前記電力用半導体素子、前記電極配線部材、前記ヒューズ部、及び前記ヒューズ樹脂部材を前記筐体内に封止する樹脂部材である封止樹脂部材と、を備え、
前記ヒューズ部は、電流の流れ方向に沿って、前記ヒューズ部よりも上流側の前記電極配線部材の部分よりも断面積が小さい上流側の第1段目部分、前記上流側の第1段目部分よりも断面積が小さい第2段目部分、及び前記第2段目部分よりも断面積が大きく、前記ヒューズ部よりも下流側の前記電極配線部材の部分よりも断面積が小さい下流側の第1段目部分により構成され、
前記ヒューズ部は、前記ヒューズ部よりも上流側及び下流側の前記電極配線部材の部分よりも厚さ方向の一方側に突出し、
前記電極配線部材は、前記ヒューズ部よりも前記厚さ方向の他方側に間隔を空けて並列された並列配線部を有し、
前記ヒューズ樹脂部材は、前記ヒューズ部と前記並列配線部との間の間隔に配置されている電力変換装置。 - 電力用半導体素子と、
前記電力用半導体素子の主電極に接続された電極配線部材と、
筐体と、
前記電極配線部材に形成された、ヒューズとして機能するヒューズ部と、
前記ヒューズ部を覆う樹脂部材であるヒューズ樹脂部材と、
前記電力用半導体素子、前記電極配線部材、前記ヒューズ部、及び前記ヒューズ樹脂部材を前記筐体内に封止する樹脂部材である封止樹脂部材と、を備え、
前記ヒューズ部は、電流の流れ方向に沿って、前記ヒューズ部よりも上流側の前記電極配線部材の部分よりも断面積が小さい上流側の第1段目部分、前記上流側の第1段目部分よりも断面積が小さい第2段目部分、及び前記第2段目部分よりも断面積が大きく、前記ヒューズ部よりも下流側の前記電極配線部材の部分よりも断面積が小さい下流側の第1段目部分により構成され、
前記電極配線部材は、前記ヒューズ部よりも前記電力用半導体素子側の部分に、上下流の部分よりも断面積が小さくなった小断面積部を有する電力変換装置。 - 前記電力用半導体素子、及び前記電極配線部材としての電極用リードフレームは、樹脂部材である素子モールド樹脂により封止された半導体素子モジュールとされ、
前記ヒューズ部は、前記素子モールド樹脂から外側に突出した前記電極用リードフレームの部分に形成されている請求項1から3のいずれか一項に記載の電力変換装置。 - 前記第2段目部分の電流の流れ方向の長さは、前記上流側の第1段目部分の電流の流れ方向の長さ及び前記下流側の第1段目部分の電流の流れ方向の長さよりも短い請求項1から4のいずれか一項に記載の電力変換装置。
- 前記第2段目部分の電流の流れ方向の長さは、前記上流側の第1段目部分の電流の流れ方向の長さ及び前記下流側の第1段目部分の電流の流れ方向の長さの半分以下である請求項5に記載の電力変換装置。
- 前記上流側の第1段目部分及び前記下流側の第1段目部分は、それぞれ、電流の流れ方向の各位置で、同じ断面積とされている請求項1から6のいずれか一項に記載の電力変換装置。
- 前記ヒューズ樹脂部材は、少なくとも前記第2段目部分の片面を覆っている請求項1から7のいずれか一項に記載の電力変換装置。
- 前記ヒューズ樹脂部材には、前記ヒューズ部が溶断した時に生じるアーク放電の消弧作用があるシリコン樹脂が用いられている請求項1から8のいずれか一項に記載の電力変換装置。
- 前記ヒューズ樹脂部材は、前記封止樹脂部材よりもヤング率が低い請求項1から9のいずれか一項に記載の電力変換装置。
- 前記ヒューズ樹脂部材のヤング率は、数十メガパスカルのオーダーである請求項1から10のいずれか一項に記載の電力変換装置。
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JP7052426B2 (ja) * | 2018-03-02 | 2022-04-12 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2021022955A (ja) * | 2019-07-24 | 2021-02-18 | 株式会社Gsユアサ | 蓄電素子の管理装置、及び、蓄電装置 |
JP7167904B2 (ja) * | 2019-11-18 | 2022-11-09 | 株式会社オートネットワーク技術研究所 | 回路構成体 |
EP3923321A1 (de) * | 2020-06-08 | 2021-12-15 | CeramTec GmbH | Modul mit anschlusslaschen für zuleitungen |
CN112420676A (zh) * | 2020-11-14 | 2021-02-26 | 陕西航空电气有限责任公司 | 一种用于航空发电机的具有短路保护功能的旋转整流二极管 |
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JP7329578B2 (ja) * | 2021-11-17 | 2023-08-18 | 三菱電機株式会社 | 電力用半導体装置 |
FR3143226A1 (fr) * | 2022-12-07 | 2024-06-14 | Safran Electrical & Power | Module de puissance pour l’alimentation d’une charge électrique d’un aéronef, système d’alimentation et procédé associé |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3962782A (en) * | 1974-01-14 | 1976-06-15 | Littelfuse, Inc. | Method of making a miniature plug-in fuse |
US4099321A (en) * | 1976-06-02 | 1978-07-11 | Littelfuse, Inc. | Method of making a miniature plug-in fuse |
US4023264A (en) * | 1976-06-21 | 1977-05-17 | Littelfuse, Inc. | Method of making miniature plug-in fuses of different fuse ratings |
US4067103A (en) * | 1977-02-07 | 1978-01-10 | Littelfuse, Inc. | Method of making a plug-in fuse |
JPS5792736A (en) * | 1980-12-01 | 1982-06-09 | Mitsubishi Electric Corp | Method of producing fuse element |
JPS60127630A (ja) * | 1983-12-14 | 1985-07-08 | 松下電工株式会社 | ヒユ−ズ |
JP2593471B2 (ja) | 1987-03-11 | 1997-03-26 | 株式会社東芝 | 半導体装置 |
JPH08242046A (ja) * | 1995-03-03 | 1996-09-17 | Rohm Co Ltd | 温度ヒューズ付き半導体装置の構造 |
US6046665A (en) * | 1996-08-22 | 2000-04-04 | Littelfuse, Inc. | Fusible link, and link and cable assembly |
JPH11111153A (ja) * | 1997-10-03 | 1999-04-23 | Daito Tsushinki Kk | ヒューズおよびその製造方法 |
JP3737673B2 (ja) * | 2000-05-23 | 2006-01-18 | 株式会社ルネサステクノロジ | 半導体装置 |
JP2003068967A (ja) * | 2001-08-29 | 2003-03-07 | Denso Corp | 半導体装置 |
JP4119674B2 (ja) * | 2002-04-26 | 2008-07-16 | 太平洋精工株式会社 | ブレード形ヒューズの製造方法 |
JP4959267B2 (ja) * | 2006-03-07 | 2012-06-20 | ルネサスエレクトロニクス株式会社 | 半導体装置および電気ヒューズの抵抗値の増加方法 |
DE102006036233B4 (de) * | 2006-08-03 | 2008-03-27 | Nkt Cables Gmbh | Freiluftendverschluss |
JP4896630B2 (ja) * | 2006-08-28 | 2012-03-14 | 矢崎総業株式会社 | ヒューズエレメント及びヒューズエレメントの製造方法 |
JP2008235502A (ja) * | 2007-03-20 | 2008-10-02 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
JP5618595B2 (ja) * | 2010-04-01 | 2014-11-05 | 日立オートモティブシステムズ株式会社 | パワーモジュール、およびパワーモジュールを備えた電力変換装置 |
CN104871418B (zh) | 2012-12-25 | 2017-03-29 | 丰田自动车株式会社 | 半导体装置 |
JP6294616B2 (ja) * | 2013-09-24 | 2018-03-14 | 古河電気工業株式会社 | 海中ケーブル、およびその遮水層用複層テープ |
US9620322B2 (en) * | 2014-04-14 | 2017-04-11 | Mersen Usa Newburyport-Ma, Llc | Arc suppressor for fusible elements |
US9892880B2 (en) * | 2014-05-22 | 2018-02-13 | Littelfuse, Inc. | Insert for fuse housing |
US9865537B1 (en) * | 2016-12-30 | 2018-01-09 | Texas Instruments Incorporated | Methods and apparatus for integrated circuit failsafe fuse package with arc arrest |
CN110998777B (zh) * | 2017-08-30 | 2022-09-20 | 三菱电机株式会社 | 功率转换装置 |
-
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