JP6818299B2 - 微細素子およびその製造方法 - Google Patents
微細素子およびその製造方法 Download PDFInfo
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- JP6818299B2 JP6818299B2 JP2017055730A JP2017055730A JP6818299B2 JP 6818299 B2 JP6818299 B2 JP 6818299B2 JP 2017055730 A JP2017055730 A JP 2017055730A JP 2017055730 A JP2017055730 A JP 2017055730A JP 6818299 B2 JP6818299 B2 JP 6818299B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 36
- 238000003825 pressing Methods 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 description 28
- 239000002184 metal Substances 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000001133 acceleration Effects 0.000 description 11
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- 238000005530 etching Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 238000007736 thin film deposition technique Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- DKNPRRRKHAEUMW-UHFFFAOYSA-N Iodine aqueous Chemical compound [K+].I[I-]I DKNPRRRKHAEUMW-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 238000009713 electroplating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910017604 nitric acid Inorganic materials 0.000 description 1
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Description
Claims (3)
- 基板と、
前記基板の上に形成された第1支持部と、
前記第1支持部の上に固定される固定部と前記基板から離間して延在する延在部とを備える梁部と、
前記基板の上に形成された第2支持部と、
前記第2支持部の上に固定されて前記第1支持部の上部の前記梁部の上面を押さえる押さえ部と
を備え、
前記梁部の前記延在部は、前記固定部より前記基板の平面に平行な第1方向に延在し、
前記押さえ部は、前記基板の平面に平行で前記第1方向に垂直な第2方向において前記固定部を挟んだ2箇所に配置された前記第2支持部に固定されていることを特徴とする微細素子。 - 基板の上に第1支持部を形成する第1工程と、
前記基板の上に第2支持部を形成する第2工程と、
前記第1支持部の上に固定される固定部と前記基板から離間して延在する延在部とを備える梁部を形成する第3工程と、
前記第2支持部の上に固定されて前記第1支持部の上部の前記梁部の上面を押さえる押さえ部を形成する第4工程と
を備え、
前記梁部の前記延在部は、前記固定部より前記基板の平面に平行な第1方向に延在し、
前記押さえ部は、前記基板の平面に平行で前記第1方向に垂直な第2方向において前記固定部を挟んだ2箇所に配置された前記第2支持部に固定されていることを特徴とする微細素子の製造方法。 - 請求項2記載の微細素子の製造方法において、
前記第1工程では、前記基板の上に第1領域および第2領域を備える第1パターン層を形成し、前記第1パターン層の前記第1領域を前記第1支持部とし、
前記第2工程では、前記第1パターン層の上に、第3領域および前記梁部となる第4領域を備える第2パターン層を形成し、前記第1パターン層の前記第2領域に、前記第2パターン層の前記第3領域が重なる状態として前記第2支持部とし、
前記第3工程では、前記第1パターン層の前記第1領域の上に、前記第2パターン層の前記第4領域の一部が重なる状態として、前記第1支持部の上に前記固定部が固定された前記梁部を形成する
ことを特徴とする微細素子の製造方法。
Priority Applications (1)
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JP2017055730A JP6818299B2 (ja) | 2017-03-22 | 2017-03-22 | 微細素子およびその製造方法 |
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JP2017055730A JP6818299B2 (ja) | 2017-03-22 | 2017-03-22 | 微細素子およびその製造方法 |
Publications (2)
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JP2018158394A JP2018158394A (ja) | 2018-10-11 |
JP6818299B2 true JP6818299B2 (ja) | 2021-01-20 |
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Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06163934A (ja) * | 1992-11-16 | 1994-06-10 | Nippondenso Co Ltd | 半導体加速度センサ及びその製造方法 |
JP2728237B2 (ja) * | 1995-03-27 | 1998-03-18 | 株式会社日立製作所 | 静電容量式加速度センサ |
US6236491B1 (en) * | 1999-05-27 | 2001-05-22 | Mcnc | Micromachined electrostatic actuator with air gap |
JP4494130B2 (ja) * | 2004-08-26 | 2010-06-30 | 日本電信電話株式会社 | 静電駆動スイッチの製造方法 |
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