JP6817167B2 - 耐湿性チップスケールパッケージ発光素子 - Google Patents
耐湿性チップスケールパッケージ発光素子 Download PDFInfo
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- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
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- 229910052749 magnesium Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- -1 manganese-activated fluoride Chemical class 0.000 description 1
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
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- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Optical Filters (AREA)
Description
本開示は、発光素子に関するものであり、詳細には、動作時に電磁放射を発生する発光半導体ダイを含む耐酸素性および耐湿性チップスケールパッケージ発光素子に関する。
関連技術の説明
以下の定義は、本発明のいくつかの実施形態に関して述べるいくつかの技術態様に適用される。これらの定義は、本願において同じように拡大してもよい。
Claims (8)
- 上面、縁面、下面および該下面に隣接して配置された1組の電極を含む発光半導体ダイと、
該発光半導体ダイ上に配置されたフォトルミネセンス構造体とを含み、該フォトルミネセンス構造体は、第2のフォトルミネセンス層、および該第2のフォトルミネセンス層上に配置された第1のフォトルミネセンス層を含み、該第1のフォトルミネセンス層および該第2のフォトルミネセンス層はそれぞれ、前記発光半導体ダイの前記上面を覆う上部と、該上部に接続されて前記発光半導体ダイの前記縁面を覆う縁部と、該縁部から外方に延びる延長部とを含み、さらに、
該フォトルミネセンス構造体上に配置された封入構造体を含む発光素子において、
前記第1のフォトルミネセンス層は、第1のポリマーマトリクス材料、および該第1のポリマーマトリクス材料内に分散された第1のフォトルミネセンス材料を含み、前記第2のフォトルミネセンス層は、第2のポリマーマトリクス材料、および該第2のポリマーマトリクス材料内に分散された第2のフォトルミネセンス材料を含み、前記第1のフォトルミネセンス材料は低感湿性のフォトルミネセンス材料であり、前記第2のフォトルミネセンス材料は感湿性フォトルミネセンス材料であり、前記封入構造体は実質的に透明なポリマー材料を含み、
前記第1のフォトルミネセンス材料の前記第1のフォトルミネセンス層に対する重量百分率は少なくとも60%であり、前記第1のポリマーマトリクス材料および前記実質的に透明なポリマー材料それぞれの2mmの層厚で測定した水蒸気透過速度は10g/m2/日以下であることを特徴とするチップスケールパッケージ発光素子。 - 前記第2のフォトルミネセンス層の前記延長部は、前記第1のフォトルミネセンス層によって覆われて封入された縁面を含むことを特徴とする請求項1に記載のチップスケールパッケージ発光素子。
- 前記フォトルミネセンス構造体はさらに第3のフォトルミネセンス層を含み、該第3のフォトルミネセンス層は、第5のポリマーマトリクス材料、および該第5のポリマーマトリクス材料内に分散された第3のフォトルミネセンス材料を含み、該第3のフォトルミネセンス材料は前記第2のフォトルミネセンス材料とは異なり、前記第2のフォトルミネセンス層は、前記第1のフォトルミネセンス層と前記第3のフォトルミネセンス層との間に配置されることを特徴とする請求項1に記載のチップスケールパッケージ発光素子。
- 前記第2のフォトルミネセンス層の前記延長部は、前記第1のフォトルミネセンス層によって覆われて封入された縁面を含むことを特徴とする請求項3に記載のチップスケールパッケージ発光素子。
- 前記第1のフォトルミネセンス材料の中程度粒径は30μm以下であることを特徴とする請求項1に記載のチップスケールパッケージ発光素子。
- 前記発光素子はさらに基板を含み、前記発光半導体ダイおよび前記フォトルミネセンス構造体は該基板上に配置されることを特徴とする請求項1ないし5のいずれか1項に記載のチップスケールパッケージ発光素子。
- 上面、縁面、下面および該下面に隣接して配置された1組の電極を含む発光半導体ダイと、
該発光半導体ダイ上に配置され、上面、縁面および下面を含んで、さらに、第1のフォトルミネセンス層、および該第1のフォトルミネセンス層上に配置された第2のフォトルミネセンス層も含むフォトルミネセンス構造体とを含み、前記第1のフォトルミネセンス層は、第1のポリマーマトリクス材料、および該第1のポリマーマトリクス材料内に分散されたより低感湿性のフォトルミネセンス材料を含み、前記第2のフォトルミネセンス層は、第2のポリマーマトリクス材料、および該第2のポリマーマトリクス材料内に分散された感湿性フォトルミネセンス材料を含み、前記低感湿性のフォトルミネセンス材料の前記第1のフォトルミネセンス層に対する重量百分率は少なくとも60%であり、前記第1のポリマーマトリクス材料の2mmの層厚で測定した水蒸気透過速度は10g/m2/日以下であり、さらに、
前記発光半導体ダイの前記縁面および前記フォトルミネセンス構造体の前記縁面を囲繞して覆う反射構造体を含み、該反射構造体は、第3のポリマーマトリクス材料、および該第3のポリマーマトリクス材料内に分散された光散乱粒子を含み、前記第3のポリマーマトリクス材料の2mmの層厚で測定した水蒸気透過速度は10g/m2/日以下であり、さらに、
前記フォトルミネセンス構造体を覆うように配置された実質的に透明な湿気バリア層を含み、前記実質的に透明な湿気バリア層は、2mmの層厚で測定した水蒸気透過速度が10g/m2/日以下の透明な無機層またはポリマーマトリクス層であることを特徴とするチップスケールパッケージ発光素子。 - 前記第1のフォトルミネセンス層の表面積は前記第2のフォトルミネセンス層の表面積よりも大きく、該第2のフォトルミネセンス層は、該第1のフォトルミネセンス層によって覆われて封入された下面および縁面を含むことを特徴とする請求項7に記載のチップスケールパッケージ発光素子。
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