JP6808423B2 - 基板処理装置および処理液供給方法 - Google Patents
基板処理装置および処理液供給方法 Download PDFInfo
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- 239000007788 liquid Substances 0.000 title claims description 144
- 239000000758 substrate Substances 0.000 title claims description 85
- 238000000034 method Methods 0.000 title claims description 44
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 163
- 238000002156 mixing Methods 0.000 claims description 55
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 48
- 230000007246 mechanism Effects 0.000 claims description 32
- 230000008569 process Effects 0.000 claims description 30
- 238000003860 storage Methods 0.000 claims description 29
- 230000002093 peripheral effect Effects 0.000 claims description 26
- 238000011282 treatment Methods 0.000 claims description 26
- 238000009826 distribution Methods 0.000 claims description 16
- 238000011084 recovery Methods 0.000 claims description 16
- 238000012935 Averaging Methods 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 230000037361 pathway Effects 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 80
- 239000000243 solution Substances 0.000 description 20
- 239000002253 acid Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
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- 239000000356 contaminant Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
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- 230000007480 spreading Effects 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
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- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/08—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means
- B05B12/10—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means responsive to temperature or viscosity of liquid or other fluent material discharged
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B14/00—Arrangements for collecting, re-using or eliminating excess spraying material
- B05B14/40—Arrangements for collecting, re-using or eliminating excess spraying material for use in spray booths
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
図1は、本実施形態に係る基板処理システムの概略構成を示す図である。以下では、位置関係を明確にするために、互いに直交するX軸、Y軸およびZ軸を規定し、Z軸正方向を鉛直上向き方向とする。
第1の実施形態では、温度調整部としてヒータ303を用いる例を説明した。しかし、温度調整部としては、加熱又は冷却機能を有するものに限定されない。本実施形態では、温度調整部として、混合部308を利用する例について説明する。
次に、第3の実施形態に係る基板処理システム1における処理液供給系の具体的な構成例について図8を参照して説明する。図8は、第3の実施形態に係る基板処理システム1における処理液供給系の具体的な構成例を示す図である。
18 制御部
70 処理液供給機構
80 温度センサ
102 貯留タンク
109 ヒータ
303 ヒータ
308 混合部
Claims (9)
- 硫酸と過酸化水素水とを混合してSPM液を生成し、生成した前記SPM液を吐出部から基板に供給する処理液供給機構と、
前記処理液供給機構から前記基板に供給されるときの前記SPM液の温度を調整する温度調整部と、
前記基板の表面上での前記SPM液の温度分布を計測する温度センサである取得部と、
前記取得部により計測された前記温度分布に基づいて前記温度調整部における調整量を設定する制御部と
を備え、
前記制御部は、
前記吐出部による前記SPM液の吐出位置を前記基板の中心と周縁との間で反復移動させている状態において、前記基板の全面の前記SPM液の温度値の平均値を算出し、算出した前記平均値に基づいて前記調整量を設定すること
を特徴とする基板処理装置。 - 前記制御部は、
算出した前記平均値と所望のSPMの温度との差分値を算出し、算出した前記差分値に基づいて前記調整量を設定すること
を特徴とする請求項1に記載の基板処理装置。 - 前記温度分布は、
前記基板の中心を含む中心領域と、前記基板の周縁を含む周縁領域とを含む複数の領域に分けられており、
前記制御部は、
前記周縁領域に属する複数の温度値のうち最も低い温度値と前記平均値とを加重平均して得られた値と所望のSPM液の温度との差分値を算出し、算出した前記差分値に基づいて前記調整量を設定すること
を特徴とする請求項1に記載の基板処理装置。 - 前記処理液供給機構は、
硫酸を通流する第1経路と、
過酸化水素水を通流する第2経路と、
前記第1経路からの硫酸と前記第2経路からの過酸化水素水を所定の混合比で混合して前記SPM液を生成する混合部と、
前記混合部により生成された前記SPM液を前記基板に対して吐出する前記吐出部と
を有し、
前記温度調整部は、
通流する硫酸の温度を調整するように前記第1経路に設けられていること
を特徴とする請求項1〜3のいずれか一つに記載の基板処理装置。 - 前記処理液供給機構は、
硫酸を通流する第1流路と、
過酸化水素水を通流する第2流路と、
前記第1流路からの硫酸と前記第2流路からの過酸化水素水を所定の混合比で混合して前記SPM液を生成する混合部と、
前記混合部により生成された前記SPM液を前記基板に対して吐出する前記吐出部と
を有し、
前記温度調整部は前記混合部であり、前記混合比を変更することにより前記SPM液の温度を調整すること
を特徴とする請求項1〜3のいずれか一つに記載の基板処理装置。 - 前記取得部は、
1枚の基板に前記SPM液を供給しているときに前記温度分布を計測し、
前記制御部は、
前記1枚の基板に前記SPM液を供給しているときに前記調整量を制御すること
を特徴とする請求項1〜5のいずれか一つに記載の基板処理装置。 - 前記処理液供給機構は、
硫酸を貯留する貯留部と、
前記貯留部の硫酸を循環させる循環経路と、
前記循環経路から分岐して硫酸を通流させる分岐経路と、
前記分岐経路を通流する硫酸と過酸化水素水を所定の混合比で混合して前記SPM液を生成する混合部と、
前記混合部によって生成された前記SPM液を前記基板に対して吐出する前記吐出部と
を有し、
前記温度調整部は、
前記循環経路を通流する硫酸の温度を調整すること
を特徴とする請求項1に記載の基板処理装置。 - 前記処理液供給機構から前記基板に供給された前記SPM液を回収して前記貯留部に戻す回収経路と、
前記処理液供給機構から前記基板に供給された前記SPM液を廃棄する廃棄経路と、
前記処理液供給機構から前記基板に供給された前記SPM液の流入先を前記回収経路と前記廃棄経路との間で切り替える切替部と
を備えることを特徴とする請求項7に記載の基板処理装置。 - 硫酸と過酸化水素水とを混合してSPM液を生成し、生成した前記SPM液を吐出部から基板に供給する供給工程と、
前記基板の表面上での前記SPM液の温度分布を計測する計測工程と、
前記計測工程において計測された前記SPM液の温度分布に基づいて前記基板に供給されるときの前記SPM液の温度の調整量を設定する設定工程と、
前記設定工程において設定された前記調整量に基づき、前記基板に供給されるときの前記SPM液の温度を調整する調整工程と
を含み、
前記設定工程は、
前記供給工程において前記吐出部による前記SPM液の吐出位置を前記基板の中心と周縁との間で反復移動させている状態において、前記基板の全面の前記SPM液の温度値の平均値を算出し、算出した前記平均値に基づいて前記調整量を設定すること
を特徴とする処理液供給方法。
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JP2016189825A JP6808423B2 (ja) | 2016-09-28 | 2016-09-28 | 基板処理装置および処理液供給方法 |
CN201710864350.6A CN107871693B (zh) | 2016-09-28 | 2017-09-22 | 基板处理装置和处理液供给方法 |
KR1020170123409A KR102432448B1 (ko) | 2016-09-28 | 2017-09-25 | 기판 처리 장치 및 처리액 공급 방법 |
US15/715,227 US20180090306A1 (en) | 2016-09-28 | 2017-09-26 | Substrate processing apparatus and processing liquid supply method |
US16/710,462 US11056335B2 (en) | 2016-09-28 | 2019-12-11 | Substrate processing apparatus |
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US11236422B2 (en) | 2017-11-17 | 2022-02-01 | Lam Research Corporation | Multi zone substrate support for ALD film property correction and tunability |
JP6942660B2 (ja) * | 2018-03-09 | 2021-09-29 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
JP2019177126A (ja) * | 2018-03-30 | 2019-10-17 | 株式会社三洋物産 | 遊技機 |
US10633742B2 (en) | 2018-05-07 | 2020-04-28 | Lam Research Foundation | Use of voltage and current measurements to control dual zone ceramic pedestals |
JP7068044B2 (ja) * | 2018-05-30 | 2022-05-16 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7456951B2 (ja) | 2018-07-05 | 2024-03-27 | ラム リサーチ コーポレーション | 基板処理システムにおける基板支持体の動的温度制御 |
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JP7202138B2 (ja) * | 2018-10-22 | 2023-01-11 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP7190892B2 (ja) * | 2018-12-12 | 2022-12-16 | 東京エレクトロン株式会社 | 基板処理装置および処理液濃縮方法 |
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JP3277404B2 (ja) * | 1993-03-31 | 2002-04-22 | ソニー株式会社 | 基板洗浄方法及び基板洗浄装置 |
JP2001129495A (ja) * | 1999-08-25 | 2001-05-15 | Shibaura Mechatronics Corp | 基板の処理方法及びその装置 |
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JP2005093926A (ja) * | 2003-09-19 | 2005-04-07 | Trecenti Technologies Inc | 基板処理装置および基板処理方法 |
JP5127325B2 (ja) * | 2007-07-03 | 2013-01-23 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP2011129651A (ja) * | 2009-12-16 | 2011-06-30 | Renesas Electronics Corp | 半導体装置の製造方法、基板処理装置、および、プログラム |
JP5371862B2 (ja) * | 2010-03-30 | 2013-12-18 | 大日本スクリーン製造株式会社 | 基板処理装置および処理液温度測定方法 |
JP5715981B2 (ja) * | 2012-03-28 | 2015-05-13 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP5832397B2 (ja) * | 2012-06-22 | 2015-12-16 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
CN102755970B (zh) * | 2012-07-16 | 2014-06-18 | 常州瑞择微电子科技有限公司 | 一种在线spm生成***及其控制方法 |
US20170301567A9 (en) * | 2012-11-20 | 2017-10-19 | Tokyo Electron Limited | System of controlling treatment liquid dispense for spinning substrates |
JP6289961B2 (ja) * | 2014-03-27 | 2018-03-07 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
KR20150113509A (ko) * | 2014-03-31 | 2015-10-08 | 아드반스 덴키 고교 가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법 |
JP6002262B2 (ja) * | 2015-03-13 | 2016-10-05 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
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CN107871693B (zh) | 2023-05-23 |
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US20180090306A1 (en) | 2018-03-29 |
CN107871693A (zh) | 2018-04-03 |
US11056335B2 (en) | 2021-07-06 |
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