JP6791266B2 - 弾性表面波装置、高周波フロントエンド回路及び通信装置 - Google Patents
弾性表面波装置、高周波フロントエンド回路及び通信装置 Download PDFInfo
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6489—Compensation of undesirable effects
- H03H9/6496—Reducing ripple in transfer characteristic
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
- H04B1/0057—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using diplexing or multiplexing filters for selecting the desired band
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B1/0475—Circuits with means for limiting noise, interference or distortion
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/50—Circuits using different frequencies for the two directions of communication
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
図1は、本発明の一実施形態に係る弾性波装置の模式的平面図である。図2(a)は、本発明の一実施形態に係る弾性波装置の回路図である。図2(b)は、1ポート型の弾性波共振子の電極構造を示す模式的平面図である。
第1のIDT電極21…デューティ比:0.60
主電極42…Pt膜、厚み:0.075λ
導電補助膜44…Al膜、厚み:0.08λ
第1の誘電体膜22…SiO2膜、厚み:0.2λ〜0.6λの範囲で調整
第1の周波数調整膜23…SiN膜、厚み:0.01λ
利用する弾性波…レイリー波
第1のIDT電極21…デューティ比:0.60
主電極42…Pt膜、厚み:0.075λ
導電補助膜44…Al膜、厚み:0.08λ
第1の誘電体膜22…SiO2膜、厚み:0.3λ
第1の周波数調整膜23…SiN膜、厚み:0.01λ
上記実施形態の弾性波装置は、高周波フロントエンド回路のデュプレクサなどとして用いることができる。この例を下記において説明する。
2…LiNbO3基板
2a…主面
2b…端部
3…送信フィルタ
4…受信フィルタ
5…アンテナ端子
6…共通端子
7…送信端子
8…受信端子
9…IDT電極
10,11…反射器
12…1ポート型弾性波共振子
13,14…縦結合共振子型弾性波フィルタ部
15…引き回し配線
20,30…第1,第2の弾性波共振子
21,31…第1,第2のIDT電極
22,32…第1,第2の誘電体膜
23,33…第1,第2の周波数調整膜
41,43,45…密着層
42…主電極
44…導電補助膜
201A,201B…デュプレクサ
202…アンテナ素子
203…RF信号処理回路
211,212…フィルタ
214…ローノイズアンプ回路
221,222…フィルタ
224…ローノイズアンプ回路
225…スイッチ
230…高周波フロントエンド回路
231,232…フィルタ
234a,234b…パワーアンプ回路
240…通信装置
244a,244b…パワーアンプ回路
A1,A2…伝搬方向
P1〜P4…並列腕共振子
S1〜S4…直列腕共振子
Claims (8)
- LiNbO3基板と、
前記LiNbO3基板上に設けられた第1のIDT電極と、前記第1のIDT電極を覆うように設けられた第1の誘電体膜とを有する、第1の弾性波共振子と、
前記LiNbO3基板上に設けられた第2のIDT電極と、前記第2のIDT電極を覆うように設けられた第2の誘電体膜とを有する、第2の弾性波共振子と、
を備え、
レイリー波を利用しており、
前記第1の誘電体膜の厚みが、前記第2の誘電体膜の厚みと異なっており、
前記第1の弾性波共振子における弾性波の伝搬方向が、前記第2の弾性波共振子における弾性波の伝搬方向と一致しており、
前記LiNbO3基板のオイラー角(φ,θ,ψ)が、(0°±5°,θ,0°±10°)の範囲内であり、
前記第1のIDT電極及び前記第2のIDT電極は、主電極を有し、
前記主電極とは、前記IDT電極のなかで最も大きな質量を占める電極層であり、
前記第1のIDT電極及び前記第2のIDT電極のうち少なくとも一方の電極指ピッチで定まる波長λにより規格化してなる前記主電極の厚みをTとし、前記主電極の密度(ρ)とPtの密度(ρPt)との密度比(ρ/ρPt)をrとしたときに、
前記LiNbO3基板のオイラー角(φ,θ,ψ)におけるθが、0.055λ≦T×r≦0.10λの範囲において、下記式(1)を満たしている、弾性表面波装置。
−0.033/(T×r−0.037)+29.99≦θ≦−0.050/(T×r−0.043)+32.45 …(1) - 前記第1のIDT電極及び前記第2のIDT電極が、同じ電極材料、かつ同じ厚みで構成されている、請求項1に記載の弾性表面波装置。
- 前記LiNbO3基板のオイラー角(φ,θ,ψ)におけるψが、−2°以上、2°以下の範囲内にある、請求項1又は2に記載の弾性表面波装置。
- 前記第1の誘電体膜及び前記第2の誘電体膜は、それぞれ酸化ケイ素を主成分とする、請求項1〜3のいずれか1項に記載の弾性表面波装置。
- 前記第1の弾性波共振子は、直列腕共振子であり、
前記第2の弾性波共振子は、並列腕共振子であり、
少なくとも前記第1の弾性波共振子と前記第2の弾性波共振子とにより、ラダー型フィルタを形成する、請求項1〜4のいずれか1項に記載の弾性表面波装置。 - 前記弾性表面波装置は、
前記第1の弾性波共振子を有する送信フィルタと、
前記第2の弾性波共振子を有する受信フィルタと、
を備える、デュプレクサである、請求項1〜4のいずれか1項に記載の弾性表面波装置。 - 請求項1〜6のいずれか1項に記載の弾性表面波装置と、
パワーアンプと、
を備える、高周波フロントエンド回路。 - 請求項7に記載の高周波フロントエンド回路と、
RF信号処理回路と、
を備える、通信装置。
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PCT/JP2017/037558 WO2018116602A1 (ja) | 2016-12-20 | 2017-10-17 | 弾性波装置、高周波フロントエンド回路及び通信装置 |
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CN110089030B (zh) * | 2016-12-20 | 2023-01-06 | 株式会社村田制作所 | 弹性波装置、高频前端电路以及通信装置 |
US11967945B2 (en) | 2018-06-15 | 2024-04-23 | Murata Manufacturing Co., Ltd. | Transversly-excited film bulk acoustic resonators and filters |
DE112019005403T5 (de) * | 2018-10-31 | 2021-07-15 | Resonant Inc. | Fest montierter transversal angeregter akustischer filmvolumenresonator |
WO2020261978A1 (ja) * | 2019-06-24 | 2020-12-30 | 株式会社村田製作所 | 弾性表面波装置及びフィルタ装置 |
US20210399714A1 (en) * | 2020-06-17 | 2021-12-23 | Resonant Inc. | Transversely-excited film bulk acoustic resonators with three-layer electrodes |
WO2022075415A1 (ja) * | 2020-10-08 | 2022-04-14 | 株式会社村田製作所 | 弾性波装置 |
WO2023002909A1 (ja) * | 2021-07-19 | 2023-01-26 | 株式会社村田製作所 | 複合フィルタ装置 |
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CN113940008B (zh) * | 2019-07-03 | 2023-06-16 | 株式会社村田制作所 | 高频模块以及通信装置 |
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WO2018116602A1 (ja) | 2018-06-28 |
KR20190076048A (ko) | 2019-07-01 |
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US11855606B2 (en) | 2023-12-26 |
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