JP6791116B2 - スピン流−電流変換構造、それを用いた熱電変換素子、およびその製造方法 - Google Patents
スピン流−電流変換構造、それを用いた熱電変換素子、およびその製造方法 Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims description 162
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- 230000005291 magnetic effect Effects 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 49
- 229910052723 transition metal Inorganic materials 0.000 claims description 43
- 150000003624 transition metals Chemical class 0.000 claims description 42
- 239000000696 magnetic material Substances 0.000 claims description 34
- 238000003860 storage Methods 0.000 claims description 17
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 16
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 16
- 230000005355 Hall effect Effects 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 230000005678 Seebeck effect Effects 0.000 claims description 13
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- 238000000576 coating method Methods 0.000 claims description 8
- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 claims description 8
- 229910003450 rhodium oxide Inorganic materials 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 4
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 4
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 4
- 239000010408 film Substances 0.000 description 80
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 43
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- 229910052697 platinum Inorganic materials 0.000 description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- 230000005415 magnetization Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
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- 238000004544 sputter deposition Methods 0.000 description 9
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- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000000354 decomposition reaction Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 125000002524 organometallic group Chemical group 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910000457 iridium oxide Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 239000002223 garnet Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
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- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
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- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
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- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000004706 metal oxides Chemical group 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical group [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
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Description
図1は、本発明の第1の実施形態に係るスピン流−電流変換構造100の構成を示す斜視図である。スピン流−電流変換構造100は、4d遷移金属酸化物構造110、スピン流入出力構造120、および電流入出力構造130、とを有する。
次に、本発明の第2の実施形態について説明する。図2は、本発明の第2の実施形態に係る熱電変換素子200の構成を示す斜視図である。本実施形態の熱電変換素子200は、第1の実施形態によるスピン流−電流変換構造を起電体として用いた熱電変換素子である。
次に、本発明の第3の実施形態について説明する。図7は、本発明の第3の実施形態に係る記憶素子300の構成を示す斜視図である。本実施形態の記憶素子300は、第1の実施形態によるスピン流−電流変換構造を導電層として用いた記憶素子である。
110 4d遷移金属酸化物構造
120 スピン流入出力構造
130 電流入出力構造
200、202 熱電変換素子
201 評価用熱電変換素子
210 磁性体層
220 導電性4d遷移金属酸化物層
230 基体
241A、241B パッド部
242A、242B 端子部
250 電圧計
300、301 記憶素子
310 磁性自由層
320 バリア層
330 磁性固定層
340 導電性4d遷移金属酸化膜
350 基板
360 読み出し電極
371A、371B 電極端子
372 読み出し電極端子
10 スピン流
20 電流
30 書き込み電流
Claims (8)
- 4d遷移金属を含む酸化物を主成分とする4d遷移金属酸化物構造と、
前記4d遷移金属酸化物構造の面直方向にスピン流を流入出するスピン流入出力構造と、
前記4d遷移金属酸化物構造の面内方向に伝導する電流を流入出する電流入出力構造、とを有し、
前記4d遷移金属を含む酸化物における前記4d遷移金属の価数は、前記4d遷移金属を含む酸化物のスピンホール角が最大となる値である
スピン流−電流変換構造。 - 請求項1に記載したスピン流−電流変換構造において、
前記4d遷移金属を含む酸化物は、酸化ルテニウム、酸化ロジウム、および酸化ニオブのうちの少なくとも一を含む
スピン流−電流変換構造。 - 請求項1または2に記載したスピン流−電流変換構造において、
前記4d遷移金属を含む酸化物の前記面直方向の厚さが、2ナノメートル以上、かつ、30ナノメートル以下である
スピン流−電流変換構造。 - スピンゼーベック効果を発現する磁性体材料を含む磁性体層と、
前記磁性体層とスピン流が流出入できるように接続し、逆スピンホール効果によって起電力を発生する起電体、とを有し、
前記起電体は、請求項1から3のいずれか一項に記載したスピン流−電流変換構造を含む
熱電変換素子。 - 請求項4に記載した熱電変換素子において、
前記磁性体層を載置する基体と、
前記起電体とそれぞれ電気的に接続し、互いに離間して配置した二個の電極部、とを有する
熱電変換素子。 - 磁性自由層と、
前記磁性自由層と接続するバリア層と、
前記磁性自由層と前記バリア層を介してトンネル接合を形成する磁性固定層と、
スピンホール効果によってスピン流を発生し、前記スピン流が前記磁性自由層に注入するように配置した導電層、とを有し、
前記導電層は、請求項1から3のいずれか一項に記載したスピン流−電流変換構造を含む
記憶素子。 - 基体上に、スピンゼーベック効果を発現する磁性体材料を含む磁性体層を積層し、
前記磁性体層上に、前記磁性体層とスピン流が流出入できるように接続し、逆スピンホール効果によって起電力を発生する起電体を積層し、
前記起電体とそれぞれ電気的に接続する二個の電極部を、互いに離間して形成し、
前記起電体を積層する際に、前記起電体を請求項1から3のいずれか一項に記載したスピン流−電流変換構造を含んで形成し、
前記起電体を前記スピン流−電流変換構造を含んで形成した後に、前記4d遷移金属を含む酸化物における前記4d遷移金属の価数が、前記4d遷移金属を含む酸化物のスピンホール角が最大となる値となるように、前記起電体に熱処理を施す
熱電変換素子の製造方法。 - 請求項7に記載した熱電変換素子の製造方法において、
前記起電体を前記スピン流−電流変換構造を含んで形成する工程を、塗布型の形成方法を用いて行う
熱電変換素子の製造方法。
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JP2015036159 | 2015-02-26 | ||
JP2015036159 | 2015-02-26 | ||
PCT/JP2016/000807 WO2016136190A1 (ja) | 2015-02-26 | 2016-02-17 | スピン流-電流変換構造、それを用いた熱電変換素子、およびその製造方法 |
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