JP6757716B2 - 光源、その製造方法、及びライト - Google Patents
光源、その製造方法、及びライト Download PDFInfo
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- JP6757716B2 JP6757716B2 JP2017511727A JP2017511727A JP6757716B2 JP 6757716 B2 JP6757716 B2 JP 6757716B2 JP 2017511727 A JP2017511727 A JP 2017511727A JP 2017511727 A JP2017511727 A JP 2017511727A JP 6757716 B2 JP6757716 B2 JP 6757716B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 230000003287 optical effect Effects 0.000 claims description 66
- 239000004065 semiconductor Substances 0.000 claims description 47
- 230000000873 masking effect Effects 0.000 claims description 25
- 230000005540 biological transmission Effects 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Eye Examination Apparatus (AREA)
Description
Claims (9)
- 光を生成するように適応された半導体ダイオード構造と、
前記半導体ダイオード構造からの光を出力するように適応された、前記半導体ダイオード構造の上の光学エンハンスメント部と、
前記光学エンハンスメント部の頂部の少なくとも一部を覆い、前記出力された光の一部を前記光学エンハンスメント部の方に反射するように適応された部分反射層と
を有し、
前記部分反射層は、第1の位置で第1の厚さを有し、第2の、横方向の異なる位置で、第2の異なる厚さを有し、前記第2の厚さは、前記第1の厚さよりも小さく、前記部分反射層の反射率は、前記第1の位置において、前記第2の位置においてよりも高く、前記部分反射層は、横方向に変化する光透過特性を有し、
前記部分反射層は、複数の部分反射サブレイヤを有し、前記第1の位置で第1の数の部分反射サブレイヤを有し、前記第2の位置で第2の異なる数の部分反射サブレイヤを有する、
光源。 - 当該光源は更に、前記光学エンハンスメント部の頂部の少なくとも一部を覆うマスキング層を有し、該マスキング層は、該マスキング層の下向き表面に入射する出力光の透過を阻止するように適応されている、請求項1に記載の光源。
- 前記光学エンハンスメント部は、色変換材料を有する、請求項1又は2に記載の光源。
- 前記半導体ダイオード構造は、予め構造化されたサファイアLEDを有する、請求項1乃至3の何れかに記載の光源。
- 請求項1乃至4の何れかに記載の光源を有する自動車ライト。
- 請求項1乃至4の何れかに記載の光源を有するプロジェクタライト。
- 光源を製造する方法であって、
光を生成するように適応された半導体ダイオード構造を用意するステップと、
前記半導体ダイオード構造の上に光学エンハンスメント部を形成するステップであり、該光学エンハンスメント部は、前記半導体ダイオード構造からの光を出力するように適応される、ステップと、
前記光学エンハンスメント部の頂部の少なくとも一部を覆って、前記出力された光の一部を前記光学エンハンスメント部の方に反射するように適応された部分反射層を形成するステップと
を有し、
前記部分反射層は、第1の位置で第1の厚さを有し、第2の、横方向の異なる位置で、第2の異なる厚さを有し、前記第2の厚さは、前記第1の厚さよりも小さく、前記部分反射層の反射率は、前記第1の位置において、前記第2の位置においてよりも高く、前記部分反射層は、横方向に変化する光透過特性を有し、
前記部分反射層を形成するステップは、前記第1の位置の第1の数の部分反射サブレイヤと、前記第2の位置の第2の異なる数の部分反射サブレイヤとの、複数の部分反射サブレイヤを形成することを有する、
方法。 - 当該方法は更に、前記半導体ダイオード構造及び前記光学エンハンスメント部の側面を少なくとも部分的に光反射構造で取り囲むステップを有し、該光反射構造は、前記半導体ダイオード構造からの光を前記光学エンハンスメント部の方に反射するように適応される、請求項7に記載の方法。
- 当該方法は更に、前記光学エンハンスメント部の頂部の少なくとも一部をマスキング層で覆うステップを有し、該マスキング層は、該マスキング層の下向き表面に入射する出力光の透過を阻止するように適応される、請求項7又は8に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14183131 | 2014-09-02 | ||
EP14183131.3 | 2014-09-02 | ||
PCT/EP2015/069513 WO2016034469A1 (en) | 2014-09-02 | 2015-08-26 | Light source |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017527119A JP2017527119A (ja) | 2017-09-14 |
JP6757716B2 true JP6757716B2 (ja) | 2020-09-23 |
Family
ID=51483242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017511727A Active JP6757716B2 (ja) | 2014-09-02 | 2015-08-26 | 光源、その製造方法、及びライト |
Country Status (6)
Country | Link |
---|---|
US (1) | US11005017B2 (ja) |
EP (1) | EP3189550B8 (ja) |
JP (1) | JP6757716B2 (ja) |
KR (1) | KR102424178B1 (ja) |
CN (1) | CN106605307B (ja) |
WO (1) | WO2016034469A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6575361B2 (ja) * | 2016-01-07 | 2019-09-18 | セイコーエプソン株式会社 | 波長変換素子、照明装置及びプロジェクター |
CN108600720B (zh) * | 2018-07-18 | 2024-02-20 | 中国电影器材有限责任公司 | 一种用于图像信号hdr投影的光源、装置、***及方法 |
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-
2015
- 2015-08-26 CN CN201580047138.XA patent/CN106605307B/zh active Active
- 2015-08-26 KR KR1020177008867A patent/KR102424178B1/ko active IP Right Grant
- 2015-08-26 JP JP2017511727A patent/JP6757716B2/ja active Active
- 2015-08-26 WO PCT/EP2015/069513 patent/WO2016034469A1/en active Application Filing
- 2015-08-26 EP EP15757204.1A patent/EP3189550B8/en active Active
- 2015-08-26 US US15/506,663 patent/US11005017B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2016034469A1 (en) | 2016-03-10 |
CN106605307A (zh) | 2017-04-26 |
JP2017527119A (ja) | 2017-09-14 |
KR102424178B1 (ko) | 2022-07-25 |
CN106605307B (zh) | 2020-08-11 |
EP3189550A1 (en) | 2017-07-12 |
EP3189550B1 (en) | 2018-04-04 |
KR20170048514A (ko) | 2017-05-08 |
EP3189550B8 (en) | 2018-08-29 |
US20170256690A1 (en) | 2017-09-07 |
US11005017B2 (en) | 2021-05-11 |
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