JP6754887B2 - デジタルリソグラフィのための焦点センタリング方法 - Google Patents
デジタルリソグラフィのための焦点センタリング方法 Download PDFInfo
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
Claims (15)
- デジタルリソグラフィシステムのための焦点設定を調整する方法であって、
基板の上に形成されたフォトレジストの表面を走査することと、
前記デジタルリソグラフィシステムのための焦点設定を決定することであって、
前記フォトレジストの上に複数の露光を位置付けること、及び
複数の焦点設定について各露光の側壁幅を測定すること
を含む、焦点設定を決定することと、
最小の側壁幅が提供されるように、前記焦点設定を調整することと
を含む方法。 - 前記焦点設定の範囲が−100μmから100μmまでである、請求項1に記載の方法。
- 前記焦点設定の範囲が−30μmから30μmまでである、請求項2に記載の方法。
- 複数の焦点設定について前記各露光の側壁幅を測定することが、
前記各露光の側壁に沿った複数の点で前記側壁幅を測定すること
を含む、請求項1から3のいずれか一項に記載の方法。 - 前記デジタルリソグラフィシステムのための焦点設定を決定することが、
前記デジタルリソグラフィシステム内の各画像投影システムに対する前記デジタルリソグラフィシステムのための焦点設定を決定することを更に含む、請求項1から4のいずれか一項に記載の方法。 - 前記フォトレジストの前記表面が、三次元光学プロファイラを使用して走査される、請求項1から5のいずれか一項に記載の方法。
- 前記三次元光学プロファイラが、光源として発光ダイオードを使用する、請求項6に記載の方法。
- デジタルリソグラフィシステムのための焦点設定を調整するためのコンピュータシステムであって、
プロセッサと、
メモリであって、前記プロセッサによって実行されるとき、前記コンピュータシステムに
基板の上に形成されたフォトレジストの表面を走査させ、
前記デジタルリソグラフィシステムのための焦点設定の決定であって、
前記フォトレジストの上に複数の露光を位置付けること、及び
複数の焦点設定について各露光の側壁幅を測定すること
を含む、焦点設定の決定を実行させ、
最小の側壁幅が提供されるように、前記焦点設定を調整させる
命令を記憶するメモリと
を備えるコンピュータシステム。 - 前記焦点設定の範囲が−100μmから100μmまでである、請求項8に記載のコンピュータシステム。
- 前記焦点設定の範囲が−30μmから30μmまでである、請求項9に記載のコンピュータシステム。
- 複数の焦点設定について前記各露光の側壁幅を測定することが、
前記各露光の前記側壁に沿った複数の点で前記側壁幅を測定することを含む、請求項8から10のいずれか一項に記載のコンピュータシステム。 - 前記デジタルリソグラフィシステムのための焦点設定を決定することが、
前記デジタルリソグラフィシステム内の各画像投影システムに対する前記デジタルリソグラフィシステムのための前記焦点設定を決定することを更に含む、請求項8から11のいずれか一項に記載のコンピュータシステム。 - 前記フォトレジストの前記表面が、三次元光学プロファイラを使用して走査される、請求項8から12のいずれか一項に記載のコンピュータシステム。
- 前記三次元光学プロファイラが、光源として発光ダイオードを使用する、請求項13に記載のコンピュータシステム。
- 非一時的コンピュータ可読媒体であって、プロセッサによって実行されるとき、
基板の上に形成されたフォトレジストの表面を走査するステップと、
デジタルリソグラフィシステムのための焦点設定を決定するステップであって、
前記フォトレジストの上に複数の露光を位置付けること、及び
複数の焦点設定について各露光の側壁幅を測定すること
を含む、焦点設定を決定するステップと、
最小の側壁幅が提供されるように、前記焦点設定を調整するステップと
を実行することによって、コンピュータシステムにデジタルリソグラフィシステムのための焦点設定を調整させる命令を記憶する非一時的コンピュータ可読媒体。
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Application Number | Priority Date | Filing Date | Title |
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US201662364229P | 2016-07-19 | 2016-07-19 | |
US62/364,229 | 2016-07-19 | ||
PCT/US2017/041893 WO2018017389A1 (en) | 2016-07-19 | 2017-07-13 | A focus centering method for digital lithography |
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JP2019530890A JP2019530890A (ja) | 2019-10-24 |
JP6754887B2 true JP6754887B2 (ja) | 2020-09-16 |
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JP2019502661A Active JP6754887B2 (ja) | 2016-07-19 | 2017-07-13 | デジタルリソグラフィのための焦点センタリング方法 |
Country Status (6)
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US (1) | US20180024448A1 (ja) |
JP (1) | JP6754887B2 (ja) |
KR (1) | KR102216013B1 (ja) |
CN (1) | CN109073993B (ja) |
TW (1) | TWI676867B (ja) |
WO (1) | WO2018017389A1 (ja) |
Families Citing this family (7)
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US10488228B2 (en) * | 2016-04-11 | 2019-11-26 | Nikon Corporation | Transparent-block encoder head with isotropic wedged elements |
US10162087B2 (en) * | 2016-04-11 | 2018-12-25 | Nikon Research Corporation Of America | Optical system with a frustrated isotropic block |
US10451564B2 (en) | 2017-10-27 | 2019-10-22 | Applied Materials, Inc. | Empirical detection of lens aberration for diffraction-limited optical system |
US10459341B2 (en) * | 2018-01-30 | 2019-10-29 | Applied Materials, Inc. | Multi-configuration digital lithography system |
US10599055B1 (en) | 2018-11-15 | 2020-03-24 | Applied Materials, Inc. | Self aligning systems and methods for lithography systems |
CN112712478B (zh) * | 2020-12-22 | 2022-11-08 | 安徽地势坤光电科技有限公司 | 一种数字微镜工作角度误差的修正方法及设备 |
KR20240021242A (ko) * | 2021-06-14 | 2024-02-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 디지털 리소그래피 노출 유닛 경계 평활화 |
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US4675528A (en) * | 1985-06-28 | 1987-06-23 | Control Data Corporation | Method for measurement of spotsize and edgewidth in electron beam lithography |
JPH07280535A (ja) * | 1994-04-04 | 1995-10-27 | Seiko Epson Corp | 三次元形状測定装置 |
US5691541A (en) * | 1996-05-14 | 1997-11-25 | The Regents Of The University Of California | Maskless, reticle-free, lithography |
US5969273A (en) * | 1998-02-12 | 1999-10-19 | International Business Machines Corporation | Method and apparatus for critical dimension and tool resolution determination using edge width |
US7479633B2 (en) * | 2001-07-10 | 2009-01-20 | International Business Machines Corporation | Methodology for critical dimension metrology using stepper focus monitor information |
US6909930B2 (en) * | 2001-07-19 | 2005-06-21 | Hitachi, Ltd. | Method and system for monitoring a semiconductor device manufacturing process |
JP3997066B2 (ja) * | 2001-08-20 | 2007-10-24 | 株式会社日立製作所 | 電子線を用いたプロセス変動監視システムおよび方法 |
US6917901B2 (en) * | 2002-02-20 | 2005-07-12 | International Business Machines Corporation | Contact hole profile and line edge width metrology for critical image control and feedback of lithographic focus |
JP3480730B2 (ja) * | 2002-05-20 | 2003-12-22 | 沖電気工業株式会社 | フォーカス深度決定方法 |
US6777145B2 (en) * | 2002-05-30 | 2004-08-17 | Chartered Semiconductor Manufacturing Ltd. | In-line focus monitor structure and method using top-down SEM |
US7324214B2 (en) * | 2003-03-06 | 2008-01-29 | Zygo Corporation | Interferometer and method for measuring characteristics of optically unresolved surface features |
JP4244771B2 (ja) * | 2003-05-29 | 2009-03-25 | パナソニック株式会社 | フォーカスずれ量の測定方法および露光方法 |
JP4512395B2 (ja) * | 2004-03-30 | 2010-07-28 | 株式会社日立ハイテクノロジーズ | 露光プロセスモニタ方法及びその装置 |
US8125613B2 (en) * | 2006-04-21 | 2012-02-28 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
JP5086659B2 (ja) * | 2007-02-16 | 2012-11-28 | 株式会社日立ハイテクノロジーズ | 露光状態表示方法及びシステム |
WO2010040696A1 (en) * | 2008-10-06 | 2010-04-15 | Asml Netherlands B.V. | Lithographic focus and dose measurement using a 2-d target |
JP2012109398A (ja) * | 2010-11-17 | 2012-06-07 | Nikon Corp | 露光条件の管理方法、露光装置及び基板 |
KR102166879B1 (ko) * | 2014-03-10 | 2020-10-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 다중 하전-입자 빔 리소그래피를 위한 픽셀 블렌딩 |
JP6376556B2 (ja) * | 2014-06-10 | 2018-08-22 | 日東電工株式会社 | 光電気混載基板 |
KR102289733B1 (ko) * | 2014-08-14 | 2021-08-17 | 삼성디스플레이 주식회사 | 마스크리스 노광 방법 및 이를 수행하기 위한 마스크리스 노광 장치 |
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- 2017-07-13 KR KR1020187038098A patent/KR102216013B1/ko active IP Right Grant
- 2017-07-13 WO PCT/US2017/041893 patent/WO2018017389A1/en active Application Filing
- 2017-07-13 JP JP2019502661A patent/JP6754887B2/ja active Active
- 2017-07-13 CN CN201780026015.7A patent/CN109073993B/zh active Active
- 2017-07-13 US US15/649,249 patent/US20180024448A1/en not_active Abandoned
- 2017-07-18 TW TW106123934A patent/TWI676867B/zh active
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CN109073993B (zh) | 2021-06-01 |
KR20190004364A (ko) | 2019-01-11 |
CN109073993A (zh) | 2018-12-21 |
TWI676867B (zh) | 2019-11-11 |
JP2019530890A (ja) | 2019-10-24 |
TW201812472A (zh) | 2018-04-01 |
WO2018017389A1 (en) | 2018-01-25 |
US20180024448A1 (en) | 2018-01-25 |
KR102216013B1 (ko) | 2021-02-15 |
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