JP6720999B2 - 感光性樹脂組成物、感光性フィルム及びレジストパターンの形成方法 - Google Patents
感光性樹脂組成物、感光性フィルム及びレジストパターンの形成方法 Download PDFInfo
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- JP6720999B2 JP6720999B2 JP2018082468A JP2018082468A JP6720999B2 JP 6720999 B2 JP6720999 B2 JP 6720999B2 JP 2018082468 A JP2018082468 A JP 2018082468A JP 2018082468 A JP2018082468 A JP 2018082468A JP 6720999 B2 JP6720999 B2 JP 6720999B2
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- 239000011342 resin composition Substances 0.000 title claims description 81
- 238000000034 method Methods 0.000 title claims description 27
- 239000010410 layer Substances 0.000 claims description 37
- 150000001875 compounds Chemical class 0.000 claims description 34
- 229920005989 resin Polymers 0.000 claims description 34
- 239000011347 resin Substances 0.000 claims description 34
- 238000010438 heat treatment Methods 0.000 claims description 16
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 16
- 229920003986 novolac Polymers 0.000 claims description 14
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 13
- 239000004593 Epoxy Substances 0.000 claims description 12
- 239000011229 interlayer Substances 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 125000002723 alicyclic group Chemical group 0.000 claims description 7
- 125000001931 aliphatic group Chemical group 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 125000000466 oxiranyl group Chemical group 0.000 claims description 6
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical group C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 125000001153 fluoro group Chemical group F* 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 125000001309 chloro group Chemical group Cl* 0.000 claims 1
- 125000004093 cyano group Chemical group *C#N 0.000 claims 1
- 125000004216 fluoromethyl group Chemical group [H]C([H])(F)* 0.000 claims 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims 1
- 125000001424 substituent group Chemical group 0.000 claims 1
- -1 3,4-epoxycyclohexylmethyl Chemical group 0.000 description 42
- 238000000576 coating method Methods 0.000 description 19
- 239000011248 coating agent Substances 0.000 description 16
- 239000007864 aqueous solution Substances 0.000 description 10
- 238000001723 curing Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 238000004090 dissolution Methods 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 150000002989 phenols Chemical class 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 125000000962 organic group Chemical group 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 230000001976 improved effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- MECNWXGGNCJFQJ-UHFFFAOYSA-N 3-piperidin-1-ylpropane-1,2-diol Chemical compound OCC(O)CN1CCCCC1 MECNWXGGNCJFQJ-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- 125000001118 alkylidene group Chemical group 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical compound N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 3
- 125000001188 haloalkyl group Chemical group 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 3
- YQMXOIAIYXXXEE-UHFFFAOYSA-N 1-benzylpyrrolidin-3-ol Chemical compound C1C(O)CCN1CC1=CC=CC=C1 YQMXOIAIYXXXEE-UHFFFAOYSA-N 0.000 description 2
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- OGRAOKJKVGDSFR-UHFFFAOYSA-N 2,3,5-trimethylphenol Chemical compound CC1=CC(C)=C(C)C(O)=C1 OGRAOKJKVGDSFR-UHFFFAOYSA-N 0.000 description 2
- QWBBPBRQALCEIZ-UHFFFAOYSA-N 2,3-dimethylphenol Chemical compound CC1=CC=CC(O)=C1C QWBBPBRQALCEIZ-UHFFFAOYSA-N 0.000 description 2
- NKTOLZVEWDHZMU-UHFFFAOYSA-N 2,5-xylenol Chemical compound CC1=CC=C(C)C(O)=C1 NKTOLZVEWDHZMU-UHFFFAOYSA-N 0.000 description 2
- NXXYKOUNUYWIHA-UHFFFAOYSA-N 2,6-Dimethylphenol Chemical compound CC1=CC=CC(C)=C1O NXXYKOUNUYWIHA-UHFFFAOYSA-N 0.000 description 2
- FZXRXKLUIMKDEL-UHFFFAOYSA-N 2-Methylpropyl propanoate Chemical compound CCC(=O)OCC(C)C FZXRXKLUIMKDEL-UHFFFAOYSA-N 0.000 description 2
- HDPLHDGYGLENEI-UHFFFAOYSA-N 2-[1-(oxiran-2-ylmethoxy)propan-2-yloxymethyl]oxirane Chemical compound C1OC1COC(C)COCC1CO1 HDPLHDGYGLENEI-UHFFFAOYSA-N 0.000 description 2
- KUAUJXBLDYVELT-UHFFFAOYSA-N 2-[[2,2-dimethyl-3-(oxiran-2-ylmethoxy)propoxy]methyl]oxirane Chemical compound C1OC1COCC(C)(C)COCC1CO1 KUAUJXBLDYVELT-UHFFFAOYSA-N 0.000 description 2
- GJYCVCVHRSWLNY-UHFFFAOYSA-N 2-butylphenol Chemical compound CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- FDQQNNZKEJIHMS-UHFFFAOYSA-N 3,4,5-trimethylphenol Chemical compound CC1=CC(O)=CC(C)=C1C FDQQNNZKEJIHMS-UHFFFAOYSA-N 0.000 description 2
- YCOXTKKNXUZSKD-UHFFFAOYSA-N 3,4-xylenol Chemical compound CC1=CC=C(O)C=C1C YCOXTKKNXUZSKD-UHFFFAOYSA-N 0.000 description 2
- TUAMRELNJMMDMT-UHFFFAOYSA-N 3,5-xylenol Chemical compound CC1=CC(C)=CC(O)=C1 TUAMRELNJMMDMT-UHFFFAOYSA-N 0.000 description 2
- HMNKTRSOROOSPP-UHFFFAOYSA-N 3-Ethylphenol Chemical compound CCC1=CC=CC(O)=C1 HMNKTRSOROOSPP-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- HXDOZKJGKXYMEW-UHFFFAOYSA-N 4-ethylphenol Chemical compound CCC1=CC=C(O)C=C1 HXDOZKJGKXYMEW-UHFFFAOYSA-N 0.000 description 2
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 2
- KSMGAOMUPSQGTB-UHFFFAOYSA-N 9,10-dibutoxyanthracene Chemical compound C1=CC=C2C(OCCCC)=C(C=CC=C3)C3=C(OCCCC)C2=C1 KSMGAOMUPSQGTB-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Natural products CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
- 238000007611 bar coating method Methods 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical compound C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- JHRWWRDRBPCWTF-OLQVQODUSA-N captafol Chemical class C1C=CC[C@H]2C(=O)N(SC(Cl)(Cl)C(Cl)Cl)C(=O)[C@H]21 JHRWWRDRBPCWTF-OLQVQODUSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 238000004132 cross linking Methods 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- ZWAJLVLEBYIOTI-UHFFFAOYSA-N cyclohexene oxide Chemical compound C1CCCC2OC21 ZWAJLVLEBYIOTI-UHFFFAOYSA-N 0.000 description 2
- FWFSEYBSWVRWGL-UHFFFAOYSA-N cyclohexene oxide Natural products O=C1CCCC=C1 FWFSEYBSWVRWGL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XXTZHYXQVWRADW-UHFFFAOYSA-N diazomethanone Chemical class [N]N=C=O XXTZHYXQVWRADW-UHFFFAOYSA-N 0.000 description 2
- BQQUFAMSJAKLNB-UHFFFAOYSA-N dicyclopentadiene diepoxide Chemical compound C12C(C3OC33)CC3C2CC2C1O2 BQQUFAMSJAKLNB-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
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- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
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- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
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- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
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- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 2
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- GYXAHUXQRATWDV-UHFFFAOYSA-N (1,3-dioxoisoindol-2-yl) trifluoromethanesulfonate Chemical compound C1=CC=C2C(=O)N(OS(=O)(=O)C(F)(F)F)C(=O)C2=C1 GYXAHUXQRATWDV-UHFFFAOYSA-N 0.000 description 1
- RLLFCCPTQOZGOL-UHFFFAOYSA-N (2,5-dioxo-3,4-diphenylpyrrol-1-yl) trifluoromethanesulfonate Chemical compound O=C1N(OS(=O)(=O)C(F)(F)F)C(=O)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 RLLFCCPTQOZGOL-UHFFFAOYSA-N 0.000 description 1
- OKRLWHAZMUFONP-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) trifluoromethanesulfonate Chemical compound FC(F)(F)S(=O)(=O)ON1C(=O)CCC1=O OKRLWHAZMUFONP-UHFFFAOYSA-N 0.000 description 1
- MCVVDMSWCQUKEV-UHFFFAOYSA-N (2-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1[N+]([O-])=O MCVVDMSWCQUKEV-UHFFFAOYSA-N 0.000 description 1
- UJMXMRBISVKKOI-UHFFFAOYSA-N (2-nitrophenyl)methyl trifluoromethanesulfonate Chemical compound [O-][N+](=O)C1=CC=CC=C1COS(=O)(=O)C(F)(F)F UJMXMRBISVKKOI-UHFFFAOYSA-N 0.000 description 1
- FERZIJWEXHCCFD-UHFFFAOYSA-M (4-tert-butylphenyl)-diphenylsulfanium;4-methylbenzenesulfonate Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.C1=CC(C(C)(C)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FERZIJWEXHCCFD-UHFFFAOYSA-M 0.000 description 1
- RLAWXWSZTKMPQQ-UHFFFAOYSA-M (4-tert-butylphenyl)-diphenylsulfanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(C(C)(C)C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 RLAWXWSZTKMPQQ-UHFFFAOYSA-M 0.000 description 1
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- GTQHJCOHNAFHRE-UHFFFAOYSA-N 1,10-dibromodecane Chemical compound BrCCCCCCCCCCBr GTQHJCOHNAFHRE-UHFFFAOYSA-N 0.000 description 1
- USGYMDAUQBQWFU-UHFFFAOYSA-N 1,2,5,6-diepoxycyclooctane Chemical compound C1CC2OC2CCC2OC12 USGYMDAUQBQWFU-UHFFFAOYSA-N 0.000 description 1
- VPBZZPOGZPKYKX-UHFFFAOYSA-N 1,2-diethoxypropane Chemical compound CCOCC(C)OCC VPBZZPOGZPKYKX-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- PVMMVWNXKOSPRB-UHFFFAOYSA-N 1,2-dipropoxypropane Chemical compound CCCOCC(C)OCCC PVMMVWNXKOSPRB-UHFFFAOYSA-N 0.000 description 1
- JIHQDMXYYFUGFV-UHFFFAOYSA-N 1,3,5-triazine Chemical class C1=NC=NC=N1 JIHQDMXYYFUGFV-UHFFFAOYSA-N 0.000 description 1
- UWFRVQVNYNPBEF-UHFFFAOYSA-N 1-(2,4-dimethylphenyl)propan-1-one Chemical compound CCC(=O)C1=CC=C(C)C=C1C UWFRVQVNYNPBEF-UHFFFAOYSA-N 0.000 description 1
- QMGJMGFZLXYHCR-UHFFFAOYSA-N 1-(2-butoxypropoxy)butane Chemical compound CCCCOCC(C)OCCCC QMGJMGFZLXYHCR-UHFFFAOYSA-N 0.000 description 1
- ZYVXFNCWRJNIQJ-UHFFFAOYSA-M 1-(4,7-dibutoxynaphthalen-1-yl)thiolan-1-ium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C12=CC(OCCCC)=CC=C2C(OCCCC)=CC=C1[S+]1CCCC1 ZYVXFNCWRJNIQJ-UHFFFAOYSA-M 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
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- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- ADXGNEYLLLSOAR-UHFFFAOYSA-N tasosartan Chemical compound C12=NC(C)=NC(C)=C2CCC(=O)N1CC(C=C1)=CC=C1C1=CC=CC=C1C=1N=NNN=1 ADXGNEYLLLSOAR-UHFFFAOYSA-N 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 1
- 125000002827 triflate group Chemical group FC(S(=O)(=O)O*)(F)F 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0385—Macromolecular compounds which are rendered insoluble or differentially wettable using epoxidised novolak resin
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/24—Di-epoxy compounds carbocyclic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/285—Permanent coating compositions
- H05K3/287—Photosensitive compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4661—Adding a circuit layer by direct wet plating, e.g. electroless plating; insulating materials adapted therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Materials For Photolithography (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Description
本実施形態の感光性樹脂組成物は、(A)フェノール性水酸基を有する樹脂、(B)2つ以上のオキシラン環を有する、脂肪族又は脂環式エポキシ化合物、(C)光感応性酸発生剤、及び(D)溶剤を含有する。また、本実施形態の感光性樹脂組成物は、必要に応じて、(E)成分:架橋剤、(F)成分:増感剤等を含有してもよい。
(A)成分であるフェノール性水酸基を有する樹脂としては、特に限定されないが、アルカリ水溶液に可溶な樹脂であることが好ましく、ノボラック樹脂が特に好ましい。このようなノボラック樹脂はフェノール類とアルデヒド類とを触媒の存在下で、縮合させることにより得られる。
(B)成分である2つ以上のオキシラン環を有する、脂肪族又は脂環式エポキシ化合物は、重量平均分子量が1000以下のエポキシ化合物であることが好ましい。また、(B)成分は、2つ以上のグリシジルエーテル基を有する化合物であることが好ましく、3つ以上のグリシジルエーテル基を有する化合物であることがより好ましい。なお、本明細書において、「脂肪族又は脂環式エポキシ化合物」とは、主骨格が脂肪族骨格及び/又は脂環式骨格であり、芳香環又は複素環を含まないものをいう。
(C)成分である光感応性酸発生剤は、活性光線等の照射によって酸を発生する化合物であり、発生した酸により(B)成分同士が架橋するだけではなく、(B)成分が(A)成分のフェノール性水酸基とも反応し、現像液に対する組成物の溶解性が大幅に低下する。
オニウム塩化合物としては、例えば、ヨードニウム塩、スルホニウム塩、ホスホニウム塩、ジアゾニウム塩及びピリジニウム塩が挙げられる。好ましいオニウム塩化合物の具体例としては、ジフェニルヨードニウムトリフルオロメタンスルホネート、ジフェニルヨードニウムp−トルエンスルホネート、ジフェニルヨードニウムヘキサフルオロアンチモネート、ジフェニルヨードニウムヘキサフルオロホスフェート、ジフェニルヨードニウムテトラフルオロボレート等のジアリールヨードニウム塩;トリフェニルスルホニウムトリフルオロメタンスルホネート、トリフェニルスルホニウムp−トルエンスルホネート、トリフェニルスルホニウムヘキサフルオロアンチモネート等のトリアリールスルホニウム塩;4−t−ブチルフェニル−ジフェニルスルホニウムトリフルオロメタンスルホネート;4−t−ブチルフェニル−ジフェニルスルホニウムp−トルエンスルホネート;4,7−ジ−n−ブトキシナフチルテトラヒドロチオフェニウムトリフルオロメタンスルホネートなどが挙げられる。
ハロゲン含有化合物としては、例えば、ハロアルキル基含有炭化水素化合物及びハロアルキル基含有複素環式化合物が挙げられる。好ましいハロゲン含有化合物の具体例としては、1,10−ジブロモ−n−デカン、1,1−ビス(4−クロロフェニル)−2,2,2−トリクロロエタン;フェニル−ビス(トリクロロメチル)−s−トリアジン、4−メトキシフェニル−ビス(トリクロロメチル)−s−トリアジン、スチリル−ビス(トリクロロメチル)−s−トリアジン、ナフチル−ビス(トリクロロメチル)−s−トリアジン等のs−トリアジン誘導体が挙げられる。
ジアゾケトン化合物としては、例えば、1,3−ジケト−2−ジアゾ化合物、ジアゾベンゾキノン化合物、ジアゾナフトキノン化合物等を挙げることができる。具体例としては、フェノール類の1,2−ナフトキノンジアジド−4−スルホン酸エステル化合物が挙げられる。
スルホン化合物としては、例えば、β−ケトスルホン化合物、β−スルホニルスルホン化合物及びこれらの化合物のα−ジアゾ化合物を挙げることができる。具体例としては、4−トリルフェナシルスルホン、メシチルフェナシルスルホン、ビス(フェナシルスルホニル)メタン等が挙げられる。
スルホン酸化合物としては、例えば、アルキルスルホン酸エステル類、ハロアルキルスルホン酸エステル類、アリールスルホン酸エステル類、イミノスルホネート類等が挙げられる。好ましい具体例としては、ベンゾインp−トルエンスルホネート、ピロガロールトリストリフルオロメタンスルホネート、o−ニトロベンジルトリフルオロメタンスルホネート、o−ニトロベンジルp−トルエンスルホネート等が挙げられる。
スルホンイミド化合物の具体例としては、N−(トリフルオロメチルスルホニルオキシ)スクシンイミド、N−(トリフルオロメチルスルホニルオキシ)フタルイミド、N−(トリフルオロメチルスルホニルオキシ)ジフェニルマレイミド、N−(トリフルオロメチルスルホニルオキシ)ビシクロ[2.2.1]ヘプト−5−エン−2,3−ジカルボキシイミド、N−(トリフルオロメチルスルホニルオキシ)ナフタルイミド、N−(p−トルエンスルホニルオキシ)−1,8−ナフタルイミド、N−(10−カンファースルホニルオキシ)−1,8−ナフタルイミド等が挙げられる。
ジアゾメタン化合物の具体例としては、ビス(トリフルオロメチルスルホニル)ジアゾメタン、ビス(シクロヘキシルスルホニル)ジアゾメタン及びビス(フェニルスルホニル)ジアゾメタンが挙げられる。
(D)成分である溶剤は、感光性樹脂組成物の取り扱い性を向上させたり、粘度及び保存安定性を調節したりするために添加される。(D)成分は、有機溶剤であることが好ましい。該有機溶剤の種類は、上記性能を発揮できるものであれば特に制限はないが、例えば、エチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート等のエチレングリコールモノアルキルエーテルアセテート類;プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノプロピルエーテル、プロピレングリコールモノブチルエーテル等のプロピレングリコールモノアルキルエーテル類;プロピレングリコールジメチルエーテル、プロピレングリコールジエチルエーテル、プロピレングリコールジプロピルエーテル、プロピレングリコールジブチルエーテル等のプロピレングリコールジアルキルエーテル類;プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、プロピレングリコールモノプロピルエーテルアセテート、プロピレングリコールモノブチルエーテルアセテート等のプロピレングリコールモノアルキルエーテルアセテート類;エチルセロソルブ、ブチルセロソルブ等のセロソルブ類、ブチルカルビトール等のカルビトール類;乳酸メチル、乳酸エチル、乳酸n−プロピル、乳酸イソプロピル等の乳酸エステル類;酢酸エチル、酢酸n−プロピル、酢酸イソプロピル、酢酸n−ブチル、酢酸イソブチル、酢酸n−アミル、酢酸イソアミル、プロピオン酸イソプロピル、プロピオン酸n−ブチル、プロピオン酸イソブチル等の脂肪族カルボン酸エステル類;3−メトキシプロピオン酸メチル、3−メトキシプロピオン酸エチル、3−エトキシプロピオン酸メチル、3−エトキシプロピオン酸エチル、ピルビン酸メチル、ピルビン酸エチル等の他のエステル類;トルエン、キシレン等の芳香族炭化水素類;2−ブタノン、2−ヘプタノン、3−ヘプタノン、4−ヘプタノン、シクロヘキサノン等のケトン類;N,N−ジメチルホルムアミド、N−メチルアセトアミド、N,N−ジメチルアセトアミド、N−メチルピロリドン等のアミド類;γ−ブチロラクトン等のラクトン類などが挙げられる。上記有機溶剤は、1種単独又は2種以上を混合して使用することができる。
本実施形態の感光性樹脂組成物は、必要に応じて、(E)成分である架橋剤を更に含有していてもよい。(E)成分を含有することにより、樹脂パターン形成後の感光層を加熱して硬化する際に、(E)成分が(A)成分と反応して橋架け構造が形成し、樹脂パターンの脆弱化及び樹脂パターンの変形を防ぐことができる。
[一般式(1)中、Zは単結合又は2価の有機基を示し、R1及びR2はそれぞれ独立に水素原子又は1価の有機基を示し、R3及びR4はそれぞれ独立に1価の有機基を示し、a及びbはそれぞれ独立に1〜3の整数を示し、c及びdはそれぞれ独立に0〜3の整数を示す。]
[一般式(2)中、Xは、単結合、アルキレン基(例えば、炭素原子数が1〜10のアルキレン基)、アルキリデン基(例えば、炭素原子数が2〜10のアルキリデン基)、それらの水素原子の一部又は全部をハロゲン原子で置換した基、スルホニル基、カルボニル基、エーテル結合、スルフィド結合又はアミド結合を示す。R5は、水素原子、ヒドロキシル基、アルキル基又はハロアルキル基を示し、eは1〜10の整数を示す。複数のR5は互いに同一でも異なっていてもよい。]
本実施形態の感光性樹脂組成物は、必要に応じて、(F)成分として増感剤を更に含有していてもよい。(F)成分を含有することにより、感光性樹脂組成物の感度を向上させることができる。増感剤としては、例えば、9,10−ジブトキシアントラセン等が挙げられる。また、(F)成分は1種単独又は2種以上を混合して使用することができる。
次に、本実施形態の感光性フィルムについて説明する。
次に、本実施形態のレジストパターンの形成方法を説明する。
本実施形態の感光性樹脂組成物から形成される硬化物は、例えば、多層プリント配線板におけるソルダーレジスト及び/又は層間絶縁膜として好適に用いることができる。図1は、本実施形態の感光性樹脂組成物の硬化物をソルダーレジスト及び/又は層間絶縁膜として含む多層プリント配線板の製造方法を示す図である。図1(f)に示す多層プリント配線板100Aは表面及び内部に配線パターンを有する。多層プリント配線板100Aは、銅張積層体、層間絶縁膜及び金属箔等を積層するとともにエッチング法又はセミアディティブ法によって配線パターンを適宜形成することによって得られる。以下、多層プリント配線板100Aの製造方法を図1に基づいて簡単に説明する。
ノボラック樹脂(A−1)100質量部、エポキシ化合物(B−1〜B−7、B’−8〜B’−13)43質量部及び溶剤(D−1)100質量部を混合し、樹脂組成物を得た。
この樹脂組成物を6インチのシリコンウエハーにスピンコートし、ホットプレート上にて65℃で2分間、次いで95℃で8分間加熱し、厚さが25μmの均一な塗膜を作製した。作製した塗膜をシャーレ中、23℃で2.38質量%テトラメチルアンモニウムヒドロキシド水溶液に浸漬させて、完溶時間を測定した。溶解速度(nm/秒)は、成膜後の膜厚/完溶時間から算出した。また、溶解性を以下の基準にしたがって評価した。評価結果を表1に示す。
<溶解性の評価基準>
○:均一に溶解
△:白濁して溶解
×:不溶
A−1:ノボラック樹脂(旭有機材工業(株)製、商品名:MXP5560BF、重量平均分子量=7800)
B−1:ジシクロペンタジエンジオキシド(アルドリッチ社製、商品名)
B−2:1,4−シクロヘキサンジメタノールジグリシジルエーテル(アルドリッチ社製、商品名)
B−3:プロピレングリコールジグリシジルエーテル(共栄社化学(株)製、商品名:エポライト70P)
B−4:ネオペンチルグリコールジグリシジルエーテル(共栄社化学(株)製、商品名:エポライト1500NP)
B−5:トリメチロールエタントリグリシジルエーテル(アルドリッチ社製、商品名)
B−6:トリメチロールプロパントリグリシジルエーテル(新日鉄住金化学(株)製、商品名:ZX−1542、下記式(3)参照)
B−7:シクロヘキセンオキシド型エポキシ樹脂((株)ダイセル製、商品名:CEL2021P、下記式(4)参照)
B’−8:エチルグリシジルエーテル(東京化成工業(株)製、商品名)
B’−9:フェニルグリシジルエーテル(和光純薬工業(株)製、商品名)
B’−10:レゾルシノールジグリシジルエーテル(アルドリッチ社製、商品名)
B’−11:トリス(4−ヒドロキシフェニル)メタントリグリシジルエーテル(アルドリッチ社製、商品名)
B’−12:ビフェニルアラルキル型エポキシ樹脂(日本化薬(株)製、商品名:NC−3000H、下記式(5)参照)
B’−13:イソシアヌル型エポキシ樹脂(四国化成工業(株)製、商品名:MA−DGIC、下記式(6)参照)
D−1:プロピレングリコールモノエチルエーテルアセテート(和光純薬工業(株)製、商品名)
ノボラック樹脂(A−1〜A−3)100質量部に対し、エポキシ化合物(B−1〜B−7、B’−8〜B’−10)、光感応性酸発生剤(C−1)、溶剤(D−1)及び増感剤(F−1)を表2に示した所定量にて配合し、感光性樹脂組成物を得た。
次に、実施例4の感光性樹脂組成物をポリエチレンテレフタレートフィルム(帝人デュポンフィルム(株)製、商品名:ピューレックスA53)上に均一に塗布し、90℃の熱風対流式乾燥機で10分間乾燥して、乾燥後の厚さが40μmである感光層を形成した。次いで高圧水銀灯を有する露光機((株)オーク製作所製、商品名:EXM−1201)を用いて、照射エネルギー量が400mJ/cm2となるように感光層を露光した。露光された感光層をホットプレート上にて65℃で2分間、次いで95℃で8分間加熱し、熱風対流式乾燥機にて180℃で60分間加熱処理をした後、ポリエチレンテレフタレートフィルムから剥離して硬化膜を得た。熱機械的分析装置(セイコーインスツルメンツ(株)製、商品名:TMA/SS6000)を用いて、昇温速度5℃/分で温度を上昇させたときの該硬化膜の熱膨張率を測定し、その曲線から得られる変曲点をガラス転移温度Tgとして求めた。なお、熱膨張率の測定条件を以下に示す。
サンプル幅:2mm
サンプル長さ:20mm
チャック間距離:10mm
荷重:5gf(0.05N)
引っぱり速度:5mm/min
測定温度範囲:18〜420℃
その結果、実施例1〜10のガラス転移温度は90℃以上であり、耐熱性に優れていることが分かった。その他の評価結果を表2に示す。
*1:樹脂パターンが形成できない、又は硬化膜が脆く、測定不可
A−2:クレゾールノボラック樹脂(旭有機材工業(株)製、商品名:EP4050G)
A−3:クレゾールノボラック樹脂(旭有機材工業(株)製、商品名:EP4020G)
C−1:トリアリールスルホニウム塩(サンアプロ(株)製、商品名:CPI−101A)
F−1:9,10−ジブトキシアントラセン(川崎化成工業(株)製、商品名:DBA)
Claims (6)
- (A)成分:ノボラック樹脂を含むフェノール性水酸基を有する樹脂、
(B)成分:2つ以上のオキシラン環を有する、脂肪族又は脂環式エポキシ化合物、
(C)成分:光感応性酸発生剤、及び
(D)成分:溶剤
を含有する感光性樹脂組成物であって、
前記(A)成分100質量部に対して、前記(B)成分25〜70質量部を含有し、
前記(B)成分が、3つ以上のグリシジルエーテル基を有する、感光性樹脂組成物(但し、式(1)で表される化合物を含有する組成物を除く。)。
[式中、R 1 、R 2 及びR 3 はそれぞれ独立に炭素数1〜8のアルキル基又はフェニル基を、Yはフッ素原子又は塩素原子を、Zはフッ素原子、シアノ基、ニトロ基及びトリフルオロメチル基からなる群より選ばれる1個乃至5個の置換基を有するフェニル基を、mはYの数であり0〜3の整数を、nはZの数であり1〜4の整数をそれぞれ表し、m+n=4である。] - 支持体と、該支持体上に設けられる請求項1に記載の感光性樹脂組成物から形成される感光層と、を備える、感光性フィルム。
- 請求項1又は2に記載の感光性樹脂組成物の硬化物。
- ソルダーレジスト又は層間絶縁膜として用いられる、請求項3に記載の硬化物。
- 請求項1に記載の感光性樹脂組成物を基材上に塗布し、塗布された感光性樹脂組成物を乾燥して感光層を形成する工程と、
前記感光層を所定のパターンに露光し、露光後加熱処理を行う工程と、
加熱処理後の感光層を現像し、得られた樹脂パターンを加熱処理する工程と、
を含む、レジストパターンの形成方法。 - 基板上に、請求項2に記載の感光性フィルムの感光層を形成する工程と、
前記感光層を所定のパターンに露光し、露光後加熱処理を行う工程と、
加熱処理後の感光層を現像し、得られた樹脂パターンを加熱処理する工程と、
を含む、レジストパターンの形成方法。
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EP2940527B1 (en) | 2019-10-23 |
TWI647531B (zh) | 2019-01-11 |
EP2940527A4 (en) | 2016-08-17 |
US20150323867A1 (en) | 2015-11-12 |
TW201426171A (zh) | 2014-07-01 |
JP2018151644A (ja) | 2018-09-27 |
WO2014103516A1 (ja) | 2014-07-03 |
CN104823110B (zh) | 2021-06-04 |
US10324375B2 (en) | 2019-06-18 |
JPWO2014103516A1 (ja) | 2017-01-12 |
JP2020095279A (ja) | 2020-06-18 |
KR20150102937A (ko) | 2015-09-09 |
KR102306021B1 (ko) | 2021-09-27 |
CN104823110A (zh) | 2015-08-05 |
JP6380108B2 (ja) | 2018-08-29 |
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