JP6719236B2 - 発振回路、昇圧回路及び半導体装置 - Google Patents
発振回路、昇圧回路及び半導体装置 Download PDFInfo
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- JP6719236B2 JP6719236B2 JP2016055584A JP2016055584A JP6719236B2 JP 6719236 B2 JP6719236 B2 JP 6719236B2 JP 2016055584 A JP2016055584 A JP 2016055584A JP 2016055584 A JP2016055584 A JP 2016055584A JP 6719236 B2 JP6719236 B2 JP 6719236B2
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- 230000010355 oscillation Effects 0.000 title claims description 28
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims description 19
- 238000010586 diagram Methods 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 101001005165 Bos taurus Lens fiber membrane intrinsic protein Proteins 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 102100023487 Lens fiber major intrinsic protein Human genes 0.000 description 2
- 101710087757 Lens fiber major intrinsic protein Proteins 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/012—Modifications of generator to improve response time or to decrease power consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/03—Astable circuits
- H03K3/0315—Ring oscillators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/354—Astable circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dc-Dc Converters (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Description
図5は、従来の発振回路の一例を示す回路図である。
2 定電流素子
3 インバータ回路
10 発振回路
13 昇圧回路
Claims (4)
- 直列に接続されたPMOSトランジスタとNMOSトランジスタからなるインバータ回路を奇数段縦続接続し、前記インバータ回路を環状に接続するリングオシレータ回路と、
前記インバータ回路に所定の電流を流すPMOSトランジスタからなる第1の定電流素子と、
前記インバータ回路に所定の電流を流すNMOSトランジスタからなる第2の定電流素子と、
第1の電源電圧から第1のバイアス電圧と第2のバイアス電圧と第2の電源電圧を発生する電源回路と、を備え、
前記第2の電源電圧は、前記第1の電源電圧が所定の電圧以上で一定の電圧であって、
前記インバータ回路のPMOSトランジスタは、ソースが前記第1の定電流素子のPMOSトランジスタのドレインに接続され、基板に前記第1の電源電圧が入力され、
前記インバータ回路のNMOSトランジスタは、ソースが前記第2の定電流素子のNMOSトランジスタのドレインに接続され、基板に接地電圧が入力され、
前記第1の定電流素子のPMOSトランジスタは、ゲートに前記第1のバイアス電圧が入力され、ソースと基板に前記第2の電源電圧が入力され、
前記第2の定電流素子のNMOSトランジスタは、ゲートに前記第2のバイアス電圧が入力され、ソースと基板に前記接地電圧が入力されたことを特徴とする発振回路。 - 更に、前記リングオシレータ回路の出力電圧を前記第1の電源電圧に変換するレベルシフタ回路と、を備えたことを特徴とする請求項1記載の発振回路。
- 請求項1または2記載の発振回路を備えた昇圧回路。
- 請求項3記載の昇圧回路を備えた半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016055584A JP6719236B2 (ja) | 2016-03-18 | 2016-03-18 | 発振回路、昇圧回路及び半導体装置 |
KR1020170033311A KR102198205B1 (ko) | 2016-03-18 | 2017-03-16 | 발진 회로, 승압 회로 및 반도체 장치 |
US15/460,906 US10193535B2 (en) | 2016-03-18 | 2017-03-16 | Oscillation circuit, booster circuit, and semiconductor device |
TW106108635A TWI698087B (zh) | 2016-03-18 | 2017-03-16 | 振盪電路、升壓電路以及半導體裝置 |
CN201710160230.8A CN107204756B (zh) | 2016-03-18 | 2017-03-17 | 振荡电路、升压电路及半导体装置 |
Applications Claiming Priority (1)
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JP2016055584A JP6719236B2 (ja) | 2016-03-18 | 2016-03-18 | 発振回路、昇圧回路及び半導体装置 |
Publications (2)
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JP2017175183A JP2017175183A (ja) | 2017-09-28 |
JP6719236B2 true JP6719236B2 (ja) | 2020-07-08 |
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JP2016055584A Active JP6719236B2 (ja) | 2016-03-18 | 2016-03-18 | 発振回路、昇圧回路及び半導体装置 |
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US (1) | US10193535B2 (ja) |
JP (1) | JP6719236B2 (ja) |
KR (1) | KR102198205B1 (ja) |
CN (1) | CN107204756B (ja) |
TW (1) | TWI698087B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10128835B2 (en) * | 2017-02-20 | 2018-11-13 | Stmicroelectronics International N.V. | Aging tolerant I/O driver |
US10473530B2 (en) * | 2017-08-18 | 2019-11-12 | Qualcomm Incorporated | Apparatus and method for generating temperature-indicating signal using correlated-oscillators |
JP2019200147A (ja) * | 2018-05-17 | 2019-11-21 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および容量値測定方法 |
CN112736076B (zh) * | 2020-12-29 | 2024-05-10 | 中国科学院上海微***与信息技术研究所 | 自加热效应参数的提取装置以及提取方法 |
Family Cites Families (25)
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US4236121A (en) * | 1978-04-05 | 1980-11-25 | Massachusetts Institute Of Technology | Oscillators including charge-flow transistor logic elements |
JPS5926237B2 (ja) | 1978-06-21 | 1984-06-25 | 株式会社日立製作所 | 熱交換器 |
JPS55115717A (en) * | 1979-03-01 | 1980-09-05 | Citizen Watch Co Ltd | Ring oscillator |
JPS55135780A (en) * | 1979-04-10 | 1980-10-22 | Citizen Watch Co Ltd | Electronic watch |
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JPH0554650A (ja) * | 1991-08-26 | 1993-03-05 | Nec Corp | 半導体集積回路 |
US5300898A (en) * | 1992-07-29 | 1994-04-05 | Ncr Corporation | High speed current/voltage controlled ring oscillator circuit |
US5465075A (en) * | 1994-01-03 | 1995-11-07 | Texas Instruments Incorporated | Phase-locked loop circuit with minimum output jitter and maximum frequency stability |
JP3703516B2 (ja) * | 1994-04-25 | 2005-10-05 | セイコーインスツル株式会社 | 発振回路 |
EP0731560B1 (en) * | 1995-03-07 | 2003-05-28 | STMicroelectronics S.r.l. | Wide frequency range VCO with low jitter |
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JP3732914B2 (ja) * | 1997-02-28 | 2006-01-11 | 株式会社ルネサステクノロジ | 半導体装置 |
US5952892A (en) * | 1997-09-29 | 1999-09-14 | Lsi Logic Corporation | Low-gain, low-jitter voltage controlled oscillator circuit |
JP2001068976A (ja) * | 1999-08-30 | 2001-03-16 | Nec Kansai Ltd | 発振器 |
JP2003283306A (ja) * | 2002-03-25 | 2003-10-03 | Rohm Co Ltd | 発振器 |
JP2008141013A (ja) * | 2006-12-01 | 2008-06-19 | Matsushita Electric Ind Co Ltd | 半導体装置 |
CN101521498A (zh) * | 2008-02-29 | 2009-09-02 | 北京芯慧同用微电子技术有限责任公司 | 一种压控振荡器 |
CN101505094B (zh) * | 2009-03-05 | 2010-12-08 | 浙江大学 | 一种便携式设备的电源模块 |
CN202261165U (zh) * | 2011-09-21 | 2012-05-30 | 电子科技大学 | 一种环形压控振荡器 |
CN202334491U (zh) * | 2011-09-30 | 2012-07-11 | 杭州电子科技大学 | 数字可控环形压控振荡器电路 |
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JP5950636B2 (ja) * | 2012-03-09 | 2016-07-13 | エスアイアイ・セミコンダクタ株式会社 | 昇圧回路 |
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2016
- 2016-03-18 JP JP2016055584A patent/JP6719236B2/ja active Active
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2017
- 2017-03-16 KR KR1020170033311A patent/KR102198205B1/ko active IP Right Grant
- 2017-03-16 US US15/460,906 patent/US10193535B2/en active Active
- 2017-03-16 TW TW106108635A patent/TWI698087B/zh active
- 2017-03-17 CN CN201710160230.8A patent/CN107204756B/zh active Active
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Publication number | Publication date |
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KR102198205B1 (ko) | 2021-01-04 |
TW201806318A (zh) | 2018-02-16 |
KR20170108875A (ko) | 2017-09-27 |
US10193535B2 (en) | 2019-01-29 |
CN107204756A (zh) | 2017-09-26 |
US20170272060A1 (en) | 2017-09-21 |
CN107204756B (zh) | 2021-08-24 |
TWI698087B (zh) | 2020-07-01 |
JP2017175183A (ja) | 2017-09-28 |
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